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Dynamic Random Access Memory
(DRAM)
CS 350 Computer Organization
Spring 2004
Aaron Bowman
Scott Jones
Darrell Hall
DYNAMIC RANDOM ACCESS
MEMORY (DRAM)
• Simple DRAM
• Fast Page Mode (FPM) DRAM
• Extended Data Out (EDO) DRAM
• Burst Extended Data Out (BEDO) DRAM
• Synchronous DRAM (SDRAM)
• Rambus DRAM (RDRAM)
• Double Data Rate (DDR) DRAM
Simple DRAM
 Memory system directly connected to the CPU and was
the basic architecture that was most commonly used by
system designers on early microcomputer systems
 Simplest system to design and also the least expensive
 Preferred type for systems with a processor that
operates at speeds lower than 16 MHz
 In the late 1980s processors began to operate at
speeds faster than that so a new architecture was
necessary.
Fast Page Mode (FPM) DRAM
 Continually accesses memory from the same row of
RAM without having to specify the row each time
 Burst cycle timing as fast as 6-3-3-3
 Not only does this increase the access speed, but it
also lowers power requirements.
 Rarely used because it is slower than newer memory
types
Extended Data Out (EDO) DRAM
 Often called Hyper Page Mode DRAM
 Modified timing circuits that allow it to begin one
memory access before the previous one has finished
 Burst cycle timing as fast as 6-2-2-2
 With no price difference and the speed gained using
EDO DRAM, there was no reason to choose FPM DRAM
over EDO DRAM.
BEDO DRAM
• Advantages over
EDO
• Improved Cycle
time with address
counter on chip
• Optimized use of
four set data burst
• Disadvantage
• Not Synchronized with
CPU
• Not keep up with
buses faster the 66
MHz
• Built on asynchronous
bus compared to
SDRAM
SDRAM
• First type of DRAM to run synchronous
with the CPU
• This allowed SDRAM to run at faster
speeds
• Comes in SIMMs and DIMMs
• SIMMs need two modules
• DIMMs need one module
RDRAM
• RDRAM is short for Rambus DRAM.
• Created by the Rambus company.
• RDRAM can transfer data up to 800 MHz.
• A single RDRAM is able of providing up to 1.6
GB per second data transmission even
though it has a low pin count.
• Turnaround latency is comparatively faster,
at 12 to 23 nanoseconds.
• RDRAM equipped systems are more efficient
and achieve lower latency over SDRAM.
RDRAM
DDR-SDRAM
• DDR-SDRAM is short for Double Data Rate-
Synchronous DRAM.
• SDRAM II and DDRAM are other names for
DDR-SDRAM.
• Uses both the raising and falling edge of the
clock signal for the transfer of data.
• First generations peaked at 333 to 400 MHz
with memory up to 512 Mbits.
• Second-generations DDR II is capable of
400 MHz.
• Third generation DDRs will offer even
higher data rates due out late 2004 or early
2005.
DDR-SDRAM

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All types of DRAM and their function.ppt

  • 1. Dynamic Random Access Memory (DRAM) CS 350 Computer Organization Spring 2004 Aaron Bowman Scott Jones Darrell Hall
  • 2. DYNAMIC RANDOM ACCESS MEMORY (DRAM) • Simple DRAM • Fast Page Mode (FPM) DRAM • Extended Data Out (EDO) DRAM • Burst Extended Data Out (BEDO) DRAM • Synchronous DRAM (SDRAM) • Rambus DRAM (RDRAM) • Double Data Rate (DDR) DRAM
  • 3. Simple DRAM  Memory system directly connected to the CPU and was the basic architecture that was most commonly used by system designers on early microcomputer systems  Simplest system to design and also the least expensive  Preferred type for systems with a processor that operates at speeds lower than 16 MHz  In the late 1980s processors began to operate at speeds faster than that so a new architecture was necessary.
  • 4. Fast Page Mode (FPM) DRAM  Continually accesses memory from the same row of RAM without having to specify the row each time  Burst cycle timing as fast as 6-3-3-3  Not only does this increase the access speed, but it also lowers power requirements.  Rarely used because it is slower than newer memory types
  • 5. Extended Data Out (EDO) DRAM  Often called Hyper Page Mode DRAM  Modified timing circuits that allow it to begin one memory access before the previous one has finished  Burst cycle timing as fast as 6-2-2-2  With no price difference and the speed gained using EDO DRAM, there was no reason to choose FPM DRAM over EDO DRAM.
  • 6. BEDO DRAM • Advantages over EDO • Improved Cycle time with address counter on chip • Optimized use of four set data burst • Disadvantage • Not Synchronized with CPU • Not keep up with buses faster the 66 MHz • Built on asynchronous bus compared to SDRAM
  • 7. SDRAM • First type of DRAM to run synchronous with the CPU • This allowed SDRAM to run at faster speeds • Comes in SIMMs and DIMMs • SIMMs need two modules • DIMMs need one module
  • 8. RDRAM • RDRAM is short for Rambus DRAM. • Created by the Rambus company. • RDRAM can transfer data up to 800 MHz.
  • 9. • A single RDRAM is able of providing up to 1.6 GB per second data transmission even though it has a low pin count. • Turnaround latency is comparatively faster, at 12 to 23 nanoseconds. • RDRAM equipped systems are more efficient and achieve lower latency over SDRAM. RDRAM
  • 10. DDR-SDRAM • DDR-SDRAM is short for Double Data Rate- Synchronous DRAM. • SDRAM II and DDRAM are other names for DDR-SDRAM. • Uses both the raising and falling edge of the clock signal for the transfer of data.
  • 11. • First generations peaked at 333 to 400 MHz with memory up to 512 Mbits. • Second-generations DDR II is capable of 400 MHz. • Third generation DDRs will offer even higher data rates due out late 2004 or early 2005. DDR-SDRAM