SlideShare a Scribd company logo
3
Most read
5
Most read
17
Most read
Chapter 5 - 1
ISSUES TO ADDRESS...
• How does diffusion occur?
• Why is it an important part of processing?
• How can the rate of diffusion be predicted for
some simple cases?
• How does diffusion depend on structure
and temperature?
Chapter 5: Diffusion
Chapter 5 - 2
After studying this chapter you should be able to do the following:
1. Name and describe the two atomic mechanisms of diffusion.
2. Distinguish between steady-state and non steady state diffusion.
3.(a) Write Fick’s first and second laws in equation form and define all
parameters.
(b) Note the kind of diffusion for which each of these equations is normally
applied.
4. Write the solution to Fick’s second law for diffusion into a semi-infinite solid
when the concentration of diffusing species at the surface is held constant. Define
all parameters in this equation.
Learning Objectives
Chapter 5 - 3
Diffusion
Diffusion - Mass transport by atomic motion
Many reactions and processes that are important in the
treatment of materials rely on the transfer of mass either
within a specific solid (ordinarily on a microscopic level) or
from a liquid, a gas, or another solid phase.This is necessarily
accomplished by diffusion.
Mechanisms
Gases & Liquids – random
(Brownian) motion
Solids – vacancy diffusion or
interstitial diffusion
Chapter 5 - 4
Ni
Cu
Ni
Cu
Cu Ni
Chapter 5 - 5
• Interdiffusion: In an alloy, atoms tend to migrate
from regions of high conc. to regions of low conc.
Initially
Adapted from
Figs. 5.1 and
5.2, Callister &
Rethwisch 8e.
Diffusion
After some time
This process, whereby atoms of one metal diffuse into another, is termed inter diffusion,
or impurity diffusion.
Chapter 5 - 6
• Self-diffusion: In an elemental solid, atoms
also migrate.
Label some atoms
Diffusion
A
B
C
D
After some time
A
B
C
D
Diffusion also occurs for pure metals, but all atoms exchanging
positions are of the same type; this is termed self-diffusion.
Chapter 5 - 7
DIFFUSION MECHANISMS
From an atomic perspective, diffusion is just the stepwise migration
of atoms from lattice site to lattice site. In fact, the atoms in solid
materials are in constant motion, rapidly changing positions. For an
atom to make such a move, two conditions must be met:
(1) there must be an empty adjacent site, and
(2) the atom must have sufficient energy to break bonds with its
neighbor atoms and then cause some lattice distortion during the
displacement.This energy is vibrational in nature.
At a specific temperature some small fraction of the total number
of atoms is capable of diffusive motion, by virtue of the
magnitudes of their vibrational energies. This fraction increases
with rising temperature.
Chapter 5 - 8
Diffusion Mechanisms
Vacancy Diffusion:
• atoms exchange with vacancies
• applies to substitutional impurities atoms
• rate depends on:
-- number of vacancies
-- activation energy to exchange.
increasing elapsed time
Chapter 5 - 9
Diffusion Mechanisms
• Interstitial diffusion – smaller atoms can
diffuse between atoms.
More rapid than vacancy diffusion
Adapted from Fig. 5.3(b), Callister & Rethwisch 8e.
Chapter 5 - 10
Diffusion
• How do we quantify the amount or rate of diffusion?
   s
m
kg
or
s
cm
mol
time
area
surface
diffusing
mass)
(or
moles
Flux
2
2



J
J  slope
dt
dM
A
l
At
M
J 

M =
mass
diffused
time
• Measured empirically
– Make thin film (membrane) of known surface area
– Impose concentration gradient
– Measure how fast atoms or molecules diffuse through the
membrane
Chapter 5 - 11
Steady-State Diffusion
dx
dC
D
J 

Fick’s first law of diffusion
C1
C2
x
C1
C2
x1 x2
D  diffusion coefficient
Rate of diffusion independent of time
Flux proportional to concentration gradient =
dx
dC
1
2
1
2
linear
if
x
x
C
C
x
C
dx
dC






The negative sign in this expression indicates that the direction of diffusion is down the concentration
gradient, from a high to a low concentration.
Chapter 5 - 12
Example: Chemical Protective
Clothing (CPC)
• Methylene chloride is a common ingredient of paint
removers. Besides being an irritant, it also may be
absorbed through skin. When using this paint
remover, protective gloves should be worn.
• If butyl rubber gloves (0.04 cm thick) are used, what
is the diffusive flux of methylene chloride through the
glove?
• Data:
– diffusion coefficient in butyl rubber:
D = 110x10-8 cm2/s
– surface concentrations:
C2 = 0.02 g/cm3
C1 = 0.44 g/cm3
Chapter 5 - 13
s
cm
g
10
x
16
.
1
cm)
04
.
0
(
)
g/cm
44
.
0
g/cm
02
.
0
(
/s)
cm
10
x
110
(
2
5
-
3
3
2
8
-




J
Example (cont).
1
2
1
2
-
x
x
C
C
D
dx
dC
D
J





D
tb
6
2


glove
C1
C2
skin
paint
remover
x1 x2
• Solution – assuming linear conc. gradient
D = 110x10-8 cm2/s
C2 = 0.02 g/cm3
C1 = 0.44 g/cm3
x2 – x1 = 0.04 cm
Data:
Chapter 5 - 14
Non-steady State Diffusion
• The concentration of diffusing species is a function of
both time and position C = C(x,t)
• In this case Fick’s Second Law is used
2
2
x
C
D
t
C





Fick’s Second Law
Chapter 5 - 15
Non-steady State Diffusion
Adapted from
Fig. 5.5,
Callister &
Rethwisch 8e.
B.C. at t = 0, C = Co for 0  x  
at t > 0, C = CS for x = 0 (constant surface conc.)
C = Co for x = 
• Copper diffuses into a bar of aluminum.
pre-existing conc., Co of copper atoms
Surface conc.,
C of Cu atoms bar
s
Cs
Chapter 5 - 16
Solution:
C(x,t) = Conc. at point x at
time t
erf (z) = error function
erf(z) values are given in
Table 5.1
CS
Co
C(x,t)
 










Dt
x
C
C
C
t
,
x
C
o
s
o
2
erf
1
dy
e y
z 2
0
2 



Adapted from Fig. 5.5,
Callister & Rethwisch 8e.
Gaussian error
function,
Chapter 5 -
FACTORS THAT INFLUENCE DIFFUSION
• Diffusing Species
• The magnitude of the diffusion coefficient D is
indicative of the rate at which atoms diffuse.
• Temperature
Diffusion coefficient increases with increasing T.
17
Chapter 5 - 18
Diffusion and Temperature
Adapted from Fig. 5.7, Callister & Rethwisch 8e. (Date for Fig. 5.7
taken from E.A. Brandes and G.B. Brook (Ed.) Smithells Metals
Reference Book, 7th ed., Butterworth-Heinemann, Oxford, 1992.)
D has exponential dependence on T
Dinterstitial >> Dsubstitutional
C in a-Fe
C in g-Fe
Al in Al
Fe in a-Fe
Fe in g-Fe
1000K/T
D (m2/s)
0.5 1.0 1.5
10-20
10-14
10-8
T(C)
1500
1000
600
300
Chapter 5 - 19
Diffusion and Temperature
• Diffusion coefficient increases with increasing T.
D  Do exp







Qd
RT
= pre-exponential [m2/s]
= diffusion coefficient [m2/s]
= activation energy [J/mol or eV/atom]
= gas constant [8.314 J/mol-K]
= absolute temperature [K]
D
Do
Qd
R
T
Chapter 5 -
• The activation energy may be thought of as that energy required
to produce the diffusive motion of one mole of atoms.
20
D  Do exp







Qd
RT
Chapter 5 -
DIFFUSION IN SEMICONDUCTING
MATERIALS
• One technology that applies solid-state diffusion is the
fabrication of semiconductor integrated circuits (ICs).Each
integrated circuit chip is a thin square wafer having dimensions
on the order of 6 mm by 6 mm by 0.4 mm; furthermore, millions
of interconnected electronic devices and circuits are embedded
in one of the chip faces. Single-crystal silicon is the base
material for most ICs. In order for these IC devices to function
satisfactorily, very precise concentrations of an impurity (or
impurities) must be incorporated into minute spatial regions in a
very intricate and detailed pattern on the silicon chip; one way
this is accomplished is by atomic diffusion.
21
Chapter 5 -
OTHER DIFFUSION PATHS
• Atomic migration may also occur along
dislocations, grain boundaries, and external
surfaces.These are sometimes called “short-
circuit” diffusion paths inasmuch as rates are
much faster than for bulk diffusion. However,
in most situations short-circuit contributions to
the overall diffusion flux are insignificant
because the cross sectional areas of these
paths are extremely small.
22
Chapter 5 - 23
Diffusion FASTER for...
• open crystal structures
• materials w/secondary
bonding
• smaller diffusing atoms
• lower density materials
Diffusion SLOWER for...
• close-packed structures
• materials w/covalent
bonding
• larger diffusing atoms
• higher density materials
Summary

More Related Content

PPTX
Magnetism
PDF
M2 point defects
PPTX
Crystal structures
PPTX
Exchange Interaction and their Consequences.pptx
PPT
Voids in crystals
PPTX
PPT
Crystal defect
DOCX
FERRITES
Magnetism
M2 point defects
Crystal structures
Exchange Interaction and their Consequences.pptx
Voids in crystals
Crystal defect
FERRITES

What's hot (20)

PPTX
Crystallization
PPT
Space lattices
 
PPTX
Sintering
PPTX
Crystal structures in material science
PPT
Nickel and Titanium alloys
PPT
crystal consist of voids ......
PPTX
Solid state physics lec 1
PPTX
Ceramics PPt.pptx
PPTX
SPINELS,INVERSE SPINELS AND PEROVSKITES
PPTX
Miller indecies
PPT
Ch07 ppts material
PPTX
Spinels
PPTX
Brillouin zone and wigner seitz cell
PPT
The determination of point groups
PDF
Dft calculation by vasp
PPTX
Wafer Fabrication, CZ Method--ABU SYED KUET
PPTX
Electrical transport and magnetic interactions in 3d and 5d transition metal ...
PPTX
Ferroelectrics.pptx
PPT
Growth of single crystals
PDF
Metallography of cast iron
Crystallization
Space lattices
 
Sintering
Crystal structures in material science
Nickel and Titanium alloys
crystal consist of voids ......
Solid state physics lec 1
Ceramics PPt.pptx
SPINELS,INVERSE SPINELS AND PEROVSKITES
Miller indecies
Ch07 ppts material
Spinels
Brillouin zone and wigner seitz cell
The determination of point groups
Dft calculation by vasp
Wafer Fabrication, CZ Method--ABU SYED KUET
Electrical transport and magnetic interactions in 3d and 5d transition metal ...
Ferroelectrics.pptx
Growth of single crystals
Metallography of cast iron
Ad

Similar to diffusion final PPT.ppt (20)

PPT
Ch05 ppts callister7e
PDF
ch05_.pdf.pdf
PPT
50892550365hjkhvvvvhvvbvbvgvgvghghcg1.ppt
PDF
Chapter 05 diffusion
PPTX
Material science.pptx
PPTX
Phase Transformation Lecture 3
PPTX
Diffusion_7.pptx
PDF
chapter Seven diffusion from Materials Science and Engineering An Introducti...
PPT
1733180222222222222222222222222222222222291161.ppt
PDF
Ch05 diffusion-updated sept2016-sent fall2016
PPTX
Material Science and Metallurgy
PDF
Chapter 5 - Atom and Ion Movements in Materials.pdf
PPTX
Diffusion report
PPTX
Diffusion in Solids.pptx
PPT
ch06.ppt
PDF
Lecture: Diffusion in Metals and Alloys
PPSX
Diffusion in Materials
PPT
Difussion -3rd Sem-Phy Met- Unit 1 -MKC-NITRR.ppt
Ch05 ppts callister7e
ch05_.pdf.pdf
50892550365hjkhvvvvhvvbvbvgvgvghghcg1.ppt
Chapter 05 diffusion
Material science.pptx
Phase Transformation Lecture 3
Diffusion_7.pptx
chapter Seven diffusion from Materials Science and Engineering An Introducti...
1733180222222222222222222222222222222222291161.ppt
Ch05 diffusion-updated sept2016-sent fall2016
Material Science and Metallurgy
Chapter 5 - Atom and Ion Movements in Materials.pdf
Diffusion report
Diffusion in Solids.pptx
ch06.ppt
Lecture: Diffusion in Metals and Alloys
Diffusion in Materials
Difussion -3rd Sem-Phy Met- Unit 1 -MKC-NITRR.ppt
Ad

Recently uploaded (20)

PPTX
Internet of Things (IOT) - A guide to understanding
PDF
Enhancing Cyber Defense Against Zero-Day Attacks using Ensemble Neural Networks
PDF
Automation-in-Manufacturing-Chapter-Introduction.pdf
PDF
Mohammad Mahdi Farshadian CV - Prospective PhD Student 2026
PDF
PPT on Performance Review to get promotions
PPTX
Lecture Notes Electrical Wiring System Components
PDF
PRIZ Academy - 9 Windows Thinking Where to Invest Today to Win Tomorrow.pdf
PDF
July 2025 - Top 10 Read Articles in International Journal of Software Enginee...
PDF
SM_6th-Sem__Cse_Internet-of-Things.pdf IOT
PPTX
CH1 Production IntroductoryConcepts.pptx
PPTX
Sustainable Sites - Green Building Construction
DOCX
573137875-Attendance-Management-System-original
PPTX
FINAL REVIEW FOR COPD DIANOSIS FOR PULMONARY DISEASE.pptx
PDF
Digital Logic Computer Design lecture notes
PPTX
Artificial Intelligence
PPTX
Current and future trends in Computer Vision.pptx
PDF
Model Code of Practice - Construction Work - 21102022 .pdf
PPTX
CARTOGRAPHY AND GEOINFORMATION VISUALIZATION chapter1 NPTE (2).pptx
PDF
keyrequirementskkkkkkkkkkkkkkkkkkkkkkkkkkkkkkkkkkkkk
PPTX
M Tech Sem 1 Civil Engineering Environmental Sciences.pptx
Internet of Things (IOT) - A guide to understanding
Enhancing Cyber Defense Against Zero-Day Attacks using Ensemble Neural Networks
Automation-in-Manufacturing-Chapter-Introduction.pdf
Mohammad Mahdi Farshadian CV - Prospective PhD Student 2026
PPT on Performance Review to get promotions
Lecture Notes Electrical Wiring System Components
PRIZ Academy - 9 Windows Thinking Where to Invest Today to Win Tomorrow.pdf
July 2025 - Top 10 Read Articles in International Journal of Software Enginee...
SM_6th-Sem__Cse_Internet-of-Things.pdf IOT
CH1 Production IntroductoryConcepts.pptx
Sustainable Sites - Green Building Construction
573137875-Attendance-Management-System-original
FINAL REVIEW FOR COPD DIANOSIS FOR PULMONARY DISEASE.pptx
Digital Logic Computer Design lecture notes
Artificial Intelligence
Current and future trends in Computer Vision.pptx
Model Code of Practice - Construction Work - 21102022 .pdf
CARTOGRAPHY AND GEOINFORMATION VISUALIZATION chapter1 NPTE (2).pptx
keyrequirementskkkkkkkkkkkkkkkkkkkkkkkkkkkkkkkkkkkkk
M Tech Sem 1 Civil Engineering Environmental Sciences.pptx

diffusion final PPT.ppt

  • 1. Chapter 5 - 1 ISSUES TO ADDRESS... • How does diffusion occur? • Why is it an important part of processing? • How can the rate of diffusion be predicted for some simple cases? • How does diffusion depend on structure and temperature? Chapter 5: Diffusion
  • 2. Chapter 5 - 2 After studying this chapter you should be able to do the following: 1. Name and describe the two atomic mechanisms of diffusion. 2. Distinguish between steady-state and non steady state diffusion. 3.(a) Write Fick’s first and second laws in equation form and define all parameters. (b) Note the kind of diffusion for which each of these equations is normally applied. 4. Write the solution to Fick’s second law for diffusion into a semi-infinite solid when the concentration of diffusing species at the surface is held constant. Define all parameters in this equation. Learning Objectives
  • 3. Chapter 5 - 3 Diffusion Diffusion - Mass transport by atomic motion Many reactions and processes that are important in the treatment of materials rely on the transfer of mass either within a specific solid (ordinarily on a microscopic level) or from a liquid, a gas, or another solid phase.This is necessarily accomplished by diffusion. Mechanisms Gases & Liquids – random (Brownian) motion Solids – vacancy diffusion or interstitial diffusion
  • 4. Chapter 5 - 4 Ni Cu Ni Cu Cu Ni
  • 5. Chapter 5 - 5 • Interdiffusion: In an alloy, atoms tend to migrate from regions of high conc. to regions of low conc. Initially Adapted from Figs. 5.1 and 5.2, Callister & Rethwisch 8e. Diffusion After some time This process, whereby atoms of one metal diffuse into another, is termed inter diffusion, or impurity diffusion.
  • 6. Chapter 5 - 6 • Self-diffusion: In an elemental solid, atoms also migrate. Label some atoms Diffusion A B C D After some time A B C D Diffusion also occurs for pure metals, but all atoms exchanging positions are of the same type; this is termed self-diffusion.
  • 7. Chapter 5 - 7 DIFFUSION MECHANISMS From an atomic perspective, diffusion is just the stepwise migration of atoms from lattice site to lattice site. In fact, the atoms in solid materials are in constant motion, rapidly changing positions. For an atom to make such a move, two conditions must be met: (1) there must be an empty adjacent site, and (2) the atom must have sufficient energy to break bonds with its neighbor atoms and then cause some lattice distortion during the displacement.This energy is vibrational in nature. At a specific temperature some small fraction of the total number of atoms is capable of diffusive motion, by virtue of the magnitudes of their vibrational energies. This fraction increases with rising temperature.
  • 8. Chapter 5 - 8 Diffusion Mechanisms Vacancy Diffusion: • atoms exchange with vacancies • applies to substitutional impurities atoms • rate depends on: -- number of vacancies -- activation energy to exchange. increasing elapsed time
  • 9. Chapter 5 - 9 Diffusion Mechanisms • Interstitial diffusion – smaller atoms can diffuse between atoms. More rapid than vacancy diffusion Adapted from Fig. 5.3(b), Callister & Rethwisch 8e.
  • 10. Chapter 5 - 10 Diffusion • How do we quantify the amount or rate of diffusion?    s m kg or s cm mol time area surface diffusing mass) (or moles Flux 2 2    J J  slope dt dM A l At M J   M = mass diffused time • Measured empirically – Make thin film (membrane) of known surface area – Impose concentration gradient – Measure how fast atoms or molecules diffuse through the membrane
  • 11. Chapter 5 - 11 Steady-State Diffusion dx dC D J   Fick’s first law of diffusion C1 C2 x C1 C2 x1 x2 D  diffusion coefficient Rate of diffusion independent of time Flux proportional to concentration gradient = dx dC 1 2 1 2 linear if x x C C x C dx dC       The negative sign in this expression indicates that the direction of diffusion is down the concentration gradient, from a high to a low concentration.
  • 12. Chapter 5 - 12 Example: Chemical Protective Clothing (CPC) • Methylene chloride is a common ingredient of paint removers. Besides being an irritant, it also may be absorbed through skin. When using this paint remover, protective gloves should be worn. • If butyl rubber gloves (0.04 cm thick) are used, what is the diffusive flux of methylene chloride through the glove? • Data: – diffusion coefficient in butyl rubber: D = 110x10-8 cm2/s – surface concentrations: C2 = 0.02 g/cm3 C1 = 0.44 g/cm3
  • 13. Chapter 5 - 13 s cm g 10 x 16 . 1 cm) 04 . 0 ( ) g/cm 44 . 0 g/cm 02 . 0 ( /s) cm 10 x 110 ( 2 5 - 3 3 2 8 -     J Example (cont). 1 2 1 2 - x x C C D dx dC D J      D tb 6 2   glove C1 C2 skin paint remover x1 x2 • Solution – assuming linear conc. gradient D = 110x10-8 cm2/s C2 = 0.02 g/cm3 C1 = 0.44 g/cm3 x2 – x1 = 0.04 cm Data:
  • 14. Chapter 5 - 14 Non-steady State Diffusion • The concentration of diffusing species is a function of both time and position C = C(x,t) • In this case Fick’s Second Law is used 2 2 x C D t C      Fick’s Second Law
  • 15. Chapter 5 - 15 Non-steady State Diffusion Adapted from Fig. 5.5, Callister & Rethwisch 8e. B.C. at t = 0, C = Co for 0  x   at t > 0, C = CS for x = 0 (constant surface conc.) C = Co for x =  • Copper diffuses into a bar of aluminum. pre-existing conc., Co of copper atoms Surface conc., C of Cu atoms bar s Cs
  • 16. Chapter 5 - 16 Solution: C(x,t) = Conc. at point x at time t erf (z) = error function erf(z) values are given in Table 5.1 CS Co C(x,t)             Dt x C C C t , x C o s o 2 erf 1 dy e y z 2 0 2     Adapted from Fig. 5.5, Callister & Rethwisch 8e. Gaussian error function,
  • 17. Chapter 5 - FACTORS THAT INFLUENCE DIFFUSION • Diffusing Species • The magnitude of the diffusion coefficient D is indicative of the rate at which atoms diffuse. • Temperature Diffusion coefficient increases with increasing T. 17
  • 18. Chapter 5 - 18 Diffusion and Temperature Adapted from Fig. 5.7, Callister & Rethwisch 8e. (Date for Fig. 5.7 taken from E.A. Brandes and G.B. Brook (Ed.) Smithells Metals Reference Book, 7th ed., Butterworth-Heinemann, Oxford, 1992.) D has exponential dependence on T Dinterstitial >> Dsubstitutional C in a-Fe C in g-Fe Al in Al Fe in a-Fe Fe in g-Fe 1000K/T D (m2/s) 0.5 1.0 1.5 10-20 10-14 10-8 T(C) 1500 1000 600 300
  • 19. Chapter 5 - 19 Diffusion and Temperature • Diffusion coefficient increases with increasing T. D  Do exp        Qd RT = pre-exponential [m2/s] = diffusion coefficient [m2/s] = activation energy [J/mol or eV/atom] = gas constant [8.314 J/mol-K] = absolute temperature [K] D Do Qd R T
  • 20. Chapter 5 - • The activation energy may be thought of as that energy required to produce the diffusive motion of one mole of atoms. 20 D  Do exp        Qd RT
  • 21. Chapter 5 - DIFFUSION IN SEMICONDUCTING MATERIALS • One technology that applies solid-state diffusion is the fabrication of semiconductor integrated circuits (ICs).Each integrated circuit chip is a thin square wafer having dimensions on the order of 6 mm by 6 mm by 0.4 mm; furthermore, millions of interconnected electronic devices and circuits are embedded in one of the chip faces. Single-crystal silicon is the base material for most ICs. In order for these IC devices to function satisfactorily, very precise concentrations of an impurity (or impurities) must be incorporated into minute spatial regions in a very intricate and detailed pattern on the silicon chip; one way this is accomplished is by atomic diffusion. 21
  • 22. Chapter 5 - OTHER DIFFUSION PATHS • Atomic migration may also occur along dislocations, grain boundaries, and external surfaces.These are sometimes called “short- circuit” diffusion paths inasmuch as rates are much faster than for bulk diffusion. However, in most situations short-circuit contributions to the overall diffusion flux are insignificant because the cross sectional areas of these paths are extremely small. 22
  • 23. Chapter 5 - 23 Diffusion FASTER for... • open crystal structures • materials w/secondary bonding • smaller diffusing atoms • lower density materials Diffusion SLOWER for... • close-packed structures • materials w/covalent bonding • larger diffusing atoms • higher density materials Summary