A Gunn diode is a form of diode that exhibits negative resistance. It consists of a single piece of N-type semiconductor like gallium arsenide. When a voltage is applied, electrons are transferred into a third empty band, increasing their effective mass and decreasing their velocity. This creates a region of negative incremental resistance, where an increase in voltage causes resistance to increase. Gunn diodes are used as oscillators in radar, communications, and as sensors for intruder detection and measuring vibrations or rotational speed.