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1Distribution A: Approved for public release; distribution is unlimited
Integrity  Service  Excellence
Adaptive
Multimode
Sensing
Date: 07 03 2013
Jim Hwang
Program Officer
AFOSR/RTD
Air Force Research Laboratory
2Distribution A: Approved for public release; distribution is unlimited
2013 AFOSR SPRING REVIEW
3001B PORTFOLIO OVERVIEW
NAME: Jim Hwang
BRIEF DESCRIPTION OF PORTFOLIO: Adaptive Multimode Sensing
LIST SUB-AREAS IN PORTFOLIO:
I. Adaptive Multimode Sensing – Emphasize tunable
detectors and different detection modes such as
polarization and phase (in addition to intensity and
color). Main challenge: phase detection.
II. Novel Infrared Sensors – Emphasize novel materials and
structures such as quantum dots, nano-wires, type-II
superlattices, and 3D integration. Main challenge: dark
current.
III.Solar Cells, Thermoelectric Coolers & Others –
Deemphasize to focus portfolio with reducing budget.
3Distribution A: Approved for public release; distribution is unlimited
Motivation
Shorten time from sense to kill; avoid drowning in data
4Distribution A: Approved for public release; distribution is unlimited
-2 V
S.I. GaAs Substrate
LWIR AlGaAs/GaAs QWIP
NIR AlGaAs/GaAs PIN
-2 V
S.I. GaAs Substrate
LWIR AlGaAs/GaAs QWIP
NIR AlGaAs/GaAs PIN
Near IR LWIR
77 K
3-Color detector
demonstrated, too.
Optically-Switched 2-Color Infrared Detector
Yong-Hang Zhang (Arizona State) & Elizabeth Steenbergen (AFRL/RXAN)
5Distribution A: Approved for public release; distribution is unlimited
Speed/Sensitivity Trade-Off of IR Detectors
Vladimir Mitin (Buffalo) & Andrei Sergeev (Buffalo)
Potential barriers around
charged InAs quantum dots
(QDs) in GaAs prevents
recombination and
prolongs electron lifetime
Charged QDs strongly
enhance IR response of
photo-detectors/solar cells
p+ GaAs
InAs QDs
n+ GaAs
InAs QDs
n+ GaAs
n+ GaAs
6Distribution A: Approved for public release; distribution is unlimited
Electrically Switchable Plasmonic Polarizers
Xuejun Lu (Mass-Lowell)
Field distribution (resonance
wavelength) can be switched by
electrically biasing the polarizer
RectangularArrayof
AuPlasmonicPolarizers
7Distribution A: Approved for public release; distribution is unlimited
Spectral-Polarization Imaging
Viktor Gruev (Washington, St. Louis)
Color Filters
Angle of Polarization Image
SEM of Al Nanowires
Si
Si
Cone
Polarization
Filter
8Distribution A: Approved for public release; distribution is unlimited
0 100 200 300 400 500 600 700
0.0
0.1
0.2
0.3
0.4
Photocurrent(µA)
Time(ns)
x0.3
PbS QD
2 nm
(111)
planes
(111)
planes
0.004 0.006 0.008 0.010 0.012 0.014
1E-5
1E-4
1E-3
0.01
0.1
250 167 125 100 83 71
1E-1
QDDecayRate(ns-1
)
1E-2
T (K)
1/T ( K-1)
Non-radiative
Energy Transfer
Si
Non-radiative Energy Transfer from Quantum Dots
Anupam Madhukar (S. Cal.), M. Mahalingam (RXAN) & G. Brown (RXAN)
Controlled energy/charge transfer between
colloidal nanostructures and conventional semiconductors
Substrate
QD
10−1
10−2
10−3
10−4
10−5
PhotoluminescenceDecay(/ns)
Si
9Distribution A: Approved for public release; distribution is unlimited
Crystalline Bismuth Nanowire
Jimmy Xu (Brown)
Bi Pt
Bi Pt
IR/THz
Detector
• Bi: only known natural
negative index material
@ 60um or 5THz
• Bi oxides easily
• 1st Bi/Pt heterojunction
successfully grown
10Distribution A: Approved for public release; distribution is unlimited
InAs/GaSb Type II Superlattices
Sanjay Krishna (New Mexico), Vincent Cowan (RVSS), Christian Morath (RVSS) & John Hubbs (RVSS)
Collaboration
with Raytheon
Vision Systems
• Type II superlattices with
antimonides barriers can
compete with HgCdTe for
infrared sensing
• Strong interests from
AFRL (RX, RY, RV), Army
NVL, MDA and DARPA
• Enhanced multimodal
functionality (color,
polarization, dynamic
range, phase) through
integration with
metamaterials
Mid-IR
Response
@ 420 K!
GaSb
InAs
EC
EV
11Distribution A: Approved for public release; distribution is unlimited
Single-Crystal Semimetal/Semiconductor Nano-Composites
Chris Palmstrøm (UCSB) & Kurt Eyink (AFRL/RXAN)
IncreasingErSbcomposition[001]
ρ
˔ ρ//
{110}
GaSb
ErSb
GaSb
ErSb
GaSb(ErSb)x(GaSb)1-x
(Semimetal) (Semiconductor)
•ErSb/GaSb nano-
composites grown by
molecular beam
epitaxy
•Buried conductive
layers for multicolor
infrared detectors
•THz polarizers
embedded in III-V
heterostructures
12Distribution A: Approved for public release; distribution is unlimited
Funding Trend
I. Adaptive Multimode Sensing – Emphasize
tunable detectors and different detection modes
such as polarization and phase (in addition to intensity
and color). Main challenge: phase detection.
II. Novel Infrared Sensors – Emphasize novel
materials and structures such as quantum dots, nano-
wires, type-II superlattices, and 3D integration. Main
challenge: dark current.
III.Solar Cells, Thermoelectric Coolers & Others –
Deemphasize to focus portfolio with reducing budget.

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Hwang - Adaptive Multimode Sensing - Spring Review 2013

  • 1. 1Distribution A: Approved for public release; distribution is unlimited Integrity  Service  Excellence Adaptive Multimode Sensing Date: 07 03 2013 Jim Hwang Program Officer AFOSR/RTD Air Force Research Laboratory
  • 2. 2Distribution A: Approved for public release; distribution is unlimited 2013 AFOSR SPRING REVIEW 3001B PORTFOLIO OVERVIEW NAME: Jim Hwang BRIEF DESCRIPTION OF PORTFOLIO: Adaptive Multimode Sensing LIST SUB-AREAS IN PORTFOLIO: I. Adaptive Multimode Sensing – Emphasize tunable detectors and different detection modes such as polarization and phase (in addition to intensity and color). Main challenge: phase detection. II. Novel Infrared Sensors – Emphasize novel materials and structures such as quantum dots, nano-wires, type-II superlattices, and 3D integration. Main challenge: dark current. III.Solar Cells, Thermoelectric Coolers & Others – Deemphasize to focus portfolio with reducing budget.
  • 3. 3Distribution A: Approved for public release; distribution is unlimited Motivation Shorten time from sense to kill; avoid drowning in data
  • 4. 4Distribution A: Approved for public release; distribution is unlimited -2 V S.I. GaAs Substrate LWIR AlGaAs/GaAs QWIP NIR AlGaAs/GaAs PIN -2 V S.I. GaAs Substrate LWIR AlGaAs/GaAs QWIP NIR AlGaAs/GaAs PIN Near IR LWIR 77 K 3-Color detector demonstrated, too. Optically-Switched 2-Color Infrared Detector Yong-Hang Zhang (Arizona State) & Elizabeth Steenbergen (AFRL/RXAN)
  • 5. 5Distribution A: Approved for public release; distribution is unlimited Speed/Sensitivity Trade-Off of IR Detectors Vladimir Mitin (Buffalo) & Andrei Sergeev (Buffalo) Potential barriers around charged InAs quantum dots (QDs) in GaAs prevents recombination and prolongs electron lifetime Charged QDs strongly enhance IR response of photo-detectors/solar cells p+ GaAs InAs QDs n+ GaAs InAs QDs n+ GaAs n+ GaAs
  • 6. 6Distribution A: Approved for public release; distribution is unlimited Electrically Switchable Plasmonic Polarizers Xuejun Lu (Mass-Lowell) Field distribution (resonance wavelength) can be switched by electrically biasing the polarizer RectangularArrayof AuPlasmonicPolarizers
  • 7. 7Distribution A: Approved for public release; distribution is unlimited Spectral-Polarization Imaging Viktor Gruev (Washington, St. Louis) Color Filters Angle of Polarization Image SEM of Al Nanowires Si Si Cone Polarization Filter
  • 8. 8Distribution A: Approved for public release; distribution is unlimited 0 100 200 300 400 500 600 700 0.0 0.1 0.2 0.3 0.4 Photocurrent(µA) Time(ns) x0.3 PbS QD 2 nm (111) planes (111) planes 0.004 0.006 0.008 0.010 0.012 0.014 1E-5 1E-4 1E-3 0.01 0.1 250 167 125 100 83 71 1E-1 QDDecayRate(ns-1 ) 1E-2 T (K) 1/T ( K-1) Non-radiative Energy Transfer Si Non-radiative Energy Transfer from Quantum Dots Anupam Madhukar (S. Cal.), M. Mahalingam (RXAN) & G. Brown (RXAN) Controlled energy/charge transfer between colloidal nanostructures and conventional semiconductors Substrate QD 10−1 10−2 10−3 10−4 10−5 PhotoluminescenceDecay(/ns) Si
  • 9. 9Distribution A: Approved for public release; distribution is unlimited Crystalline Bismuth Nanowire Jimmy Xu (Brown) Bi Pt Bi Pt IR/THz Detector • Bi: only known natural negative index material @ 60um or 5THz • Bi oxides easily • 1st Bi/Pt heterojunction successfully grown
  • 10. 10Distribution A: Approved for public release; distribution is unlimited InAs/GaSb Type II Superlattices Sanjay Krishna (New Mexico), Vincent Cowan (RVSS), Christian Morath (RVSS) & John Hubbs (RVSS) Collaboration with Raytheon Vision Systems • Type II superlattices with antimonides barriers can compete with HgCdTe for infrared sensing • Strong interests from AFRL (RX, RY, RV), Army NVL, MDA and DARPA • Enhanced multimodal functionality (color, polarization, dynamic range, phase) through integration with metamaterials Mid-IR Response @ 420 K! GaSb InAs EC EV
  • 11. 11Distribution A: Approved for public release; distribution is unlimited Single-Crystal Semimetal/Semiconductor Nano-Composites Chris Palmstrøm (UCSB) & Kurt Eyink (AFRL/RXAN) IncreasingErSbcomposition[001] ρ ˔ ρ// {110} GaSb ErSb GaSb ErSb GaSb(ErSb)x(GaSb)1-x (Semimetal) (Semiconductor) •ErSb/GaSb nano- composites grown by molecular beam epitaxy •Buried conductive layers for multicolor infrared detectors •THz polarizers embedded in III-V heterostructures
  • 12. 12Distribution A: Approved for public release; distribution is unlimited Funding Trend I. Adaptive Multimode Sensing – Emphasize tunable detectors and different detection modes such as polarization and phase (in addition to intensity and color). Main challenge: phase detection. II. Novel Infrared Sensors – Emphasize novel materials and structures such as quantum dots, nano- wires, type-II superlattices, and 3D integration. Main challenge: dark current. III.Solar Cells, Thermoelectric Coolers & Others – Deemphasize to focus portfolio with reducing budget.