The paper presents an approach to enhance the integration rate of field-effect heterotransistors within a bootstrap switch framework by optimizing dopant diffusion, ion implantation, and annealing processes. It discusses a specific heterostructure design, manufacturing processes that decrease dimensions of integrated circuit elements, and the dynamics of dopant and radiation defect concentrations. The findings imply that optimizing these processes could significantly benefit solid-state electronics by allowing for finer integrated circuit elements.