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Passive Modeling – Wire
Resistance Test Automation
Phillip Corson
August 2013
August 20131
∗ Goal
∗ Background
∗ Development
∗ Results
∗ Summary
August 20132
Agenda
∗ Automate the I/V testing of wires for design kit
verification
∗ Use device geometry and design level already
available to the test executive at test time
∗ Create a test definition useable across
technologies
∗ Test definition requires only a single definition
of technology specific parameters
August 20133
Goal
∗ Wire resistance dependent on level, width, and device
length and space
∗ Current must not create self heating
∗ Testing done with current in 1 – 2 – 5 steps
∗ Net: forced current can be different on each device
with hundreds of devices to test
August 20134
Background
∗ Need “simple model” for wire resistance
∗ Start with a table of resistance values from the
technology definition derived from all the process
factors that influence wire resistance
August 20135
Development - model for test
Level
on-wafer
line width
line
resistance
per unit
length
1 M1 0.40 18.3
2 M1 0.60 10.5
3 M1 0.80 7.0
∗ Need “simple model” for wire resistance
∗ Direct fit is a power function – not desirable
August 20136
Development - model for test (cont.)
– Need function with less potential error, particularly at
the range limits
Wire Resistance y = 0.2826x
-1.2615
R
2
= 0.9961
Line Width
Resistance
∗ Need “simple model” for wire resistance
∗ Solution: Transform line width to squares/unit length
August 20137
Development – model for test (cont.)
– Result: Well behaved second order polynomial with
small coefficients and exceptional correlation
Wire Resistance y = 0.0141x
2
+ 0.3971x - 0.2421
R
2
= 0.9992
Squares/unit length
Resistance
∗ Use the “simple Model” for wire resistance combined with the
known device width and length, and target voltage drop to
compute target current
∗ Set the fitting coefficients from “simple model” and target
voltage drop aspects in the test definition
∗ Set the number of points in the sweep
∗ Use high precision DVM to measure voltage across the Kelvin
terminals
∗ Force currents set by the test script on a device instance basis
∗ DVM measurement and force current saved for each sweep
point
August 20138
Development – test script
August 20139
Results - wire resistance, thin metal
Resistance
Line Width
Narrow Thin Metal Resistance
Measurement
Model Nominal
Model Maximum
Model Minimum
∗ Measurements and model in excellent agreement
∗ Measurements and model in excellent agreement
August 201310
Results - wire resistance, thick metal
Resistance
Line Width
Wide Thick Metal Resistance
Measurement
Model Nominal
Model Maximum
Model Minimum
∗ New test script process
∗ Single test definition customized with aspects
∗ Force values computed at test execution time for each
device instance
∗ Low measurement uncertainty
∗ Excellent agreement between measurement and
model for thin and thick metal
August 201311
Summary

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Passive Modeling – Wire Resistance Test Automation

  • 1. Passive Modeling – Wire Resistance Test Automation Phillip Corson August 2013 August 20131
  • 2. ∗ Goal ∗ Background ∗ Development ∗ Results ∗ Summary August 20132 Agenda
  • 3. ∗ Automate the I/V testing of wires for design kit verification ∗ Use device geometry and design level already available to the test executive at test time ∗ Create a test definition useable across technologies ∗ Test definition requires only a single definition of technology specific parameters August 20133 Goal
  • 4. ∗ Wire resistance dependent on level, width, and device length and space ∗ Current must not create self heating ∗ Testing done with current in 1 – 2 – 5 steps ∗ Net: forced current can be different on each device with hundreds of devices to test August 20134 Background
  • 5. ∗ Need “simple model” for wire resistance ∗ Start with a table of resistance values from the technology definition derived from all the process factors that influence wire resistance August 20135 Development - model for test Level on-wafer line width line resistance per unit length 1 M1 0.40 18.3 2 M1 0.60 10.5 3 M1 0.80 7.0
  • 6. ∗ Need “simple model” for wire resistance ∗ Direct fit is a power function – not desirable August 20136 Development - model for test (cont.) – Need function with less potential error, particularly at the range limits Wire Resistance y = 0.2826x -1.2615 R 2 = 0.9961 Line Width Resistance
  • 7. ∗ Need “simple model” for wire resistance ∗ Solution: Transform line width to squares/unit length August 20137 Development – model for test (cont.) – Result: Well behaved second order polynomial with small coefficients and exceptional correlation Wire Resistance y = 0.0141x 2 + 0.3971x - 0.2421 R 2 = 0.9992 Squares/unit length Resistance
  • 8. ∗ Use the “simple Model” for wire resistance combined with the known device width and length, and target voltage drop to compute target current ∗ Set the fitting coefficients from “simple model” and target voltage drop aspects in the test definition ∗ Set the number of points in the sweep ∗ Use high precision DVM to measure voltage across the Kelvin terminals ∗ Force currents set by the test script on a device instance basis ∗ DVM measurement and force current saved for each sweep point August 20138 Development – test script
  • 9. August 20139 Results - wire resistance, thin metal Resistance Line Width Narrow Thin Metal Resistance Measurement Model Nominal Model Maximum Model Minimum ∗ Measurements and model in excellent agreement
  • 10. ∗ Measurements and model in excellent agreement August 201310 Results - wire resistance, thick metal Resistance Line Width Wide Thick Metal Resistance Measurement Model Nominal Model Maximum Model Minimum
  • 11. ∗ New test script process ∗ Single test definition customized with aspects ∗ Force values computed at test execution time for each device instance ∗ Low measurement uncertainty ∗ Excellent agreement between measurement and model for thin and thick metal August 201311 Summary