SPICE MODEL of SCS206AGHR (Professional Model) in SPICE PARK
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The document is a device modeling report for the SIC Schottky Barrier Diode (part number SCS206AGHR) produced by Bee Technologies Inc. It includes detailed parameter specifications, circuit configurations, and simulation results comparing measured and simulated characteristics such as forward current, junction capacitance, and reverse characteristics. Overall, the report presents simulation data with a focus on accuracy and component behavior in various electrical conditions.
SPICE MODEL of SCS206AGHR (Professional Model) in SPICE PARK
- 1. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 1 Device Modeling Report Bee Technologies Inc. COMPONENTS: SiC Schottky Barrier Diode PART NUMBER: SCS206AGHR MANUFACTURER: ROHM REMARK: Professional Model
- 2. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 2 (2) (3) (1) Circuit Configuration DIODE MODEL PARAMETERS PSpice model parameter Model description IS Saturation Current N Emission Coefficient RS Series Resistance IKF High-injection Knee Current CJO Zero-bias Junction Capacitance M Junction Grading Coefficient VJ Junction Potential ISR Recombination Current Saturation Value BV Reverse Breakdown Voltage(a positive value) IBV Reverse Breakdown Current(a positive value) TT Transit Time EG Energy-band Gap
- 3. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 3 U1 SCS206AGHR R1 0.01m V1 0Vdc 0 R2 100MEG V _ V 1 0V 0.5V 1.0V 1.5V 2.0V 2.5V I(R1) 1.0mA 10mA 100mA 1.0A 10A 100A Forward Current Characteristics Circuit Simulation result Evaluation circuit
- 4. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 4 Comparison Graph Circuit Simulation result Comparison table IF (A) VF (V) %Error Measurement Simulation 0.001 0.725 0.722 -0.41 0.01 0.777 0.782 0.64 0.1 0.847 0.847 0.00 1 0.970 0.964 -0.62 2 1.050 1.046 -0.39 5 1.250 1.260 0.80 10 1.600 1.596 -0.25
- 5. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 5 V ( R ) 10mV 100mV 1.0V 10V 100V 1.0KV I(V2)/(650V/10u) 1.0p 10p 100p 1.0n 0 R V1 TD = 0 TF = 100ns PW = 100us PER = 10m V1 = 0 TR = 10us V2 = 650 V2 0Vdc R2 100MEG U1 SCS206AGHR Junction Capacitance Characteristic Circuit Simulation result Evaluation circuit
- 6. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 6 Comparison Graph Circuit Simulation result Comparison table VR(V) Ct (pF) %Error Measurement Simulation 0.01 300.000 296.300 -1.23 0.1 290.000 284.700 -1.83 1 220.000 217.200 -1.27 10 91.420 87.600 -4.18 20 65.800 62.600 -4.86 50 43.500 41.600 -4.37 100 33.500 32.200 -3.88 200 26.000 26.400 1.54 500 22.000 22.000 0.00
- 7. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 7 V _ V 1 0V 100V 200V 300V 400V 500V 600V I(R1) 1.0nA 10nA 100nA 1.0uA 10uA 100uA V1 0Vdc R1 100m 0 R2 100G U1 SCS206AGHR Reverse Characteristic Circuit Simulation result Evaluation circuit
- 8. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 8 Comparison Graph Circuit Simulation result Comparison table IR (uA) VR (V) %Error Measurement Simulation 0.001 350.000 339.100 -3.11 0.01 438.000 437.200 -0.18 0.1 523.000 523.000 0.00 0.8 600.000 600.000 0.00