SPICE MODEL of TRS12A65C (Professional Model) in SPICE PARK
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This document provides a device modeling report for a SiC Schottky Barrier Diode with part number TRS12A65C. It includes the diode model parameters, simulation results for forward and reverse current characteristics, junction capacitance characteristics, and comparison data between measurement and simulation results with less than 5% error. Circuit simulations were performed to characterize the electrical behavior and validate the diode model.
SPICE MODEL of TRS12A65C (Professional Model) in SPICE PARK
- 1. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 1 Device Modeling Report Bee Technologies Inc. COMPONENTS: SiC Schottky Barrier Diode PART NUMBER: TRS12A65C MANUFACTURER: TOSHIBA REMARK: Professional Model
- 2. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 2 Circuit Configuration DIODE MODEL PARAMETERS PSpice model parameter Model description IS Saturation Current N Emission Coefficient RS Series Resistance IKF High-injection Knee Current CJO Zero-bias Junction Capacitance M Junction Grading Coefficient VJ Junction Potential ISR Recombination Current Saturation Value BV Reverse Breakdown Voltage(a positive value) IBV Reverse Breakdown Current(a positive value) TT Transit Time EG Energy-band Gap
- 3. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 3 R1 0.01m V1 0Vdc 0 U1 TRS12A65C V _ V 1 0V 0.5V 1.0V 1.5V 2.0V I(R1) 0A 2A 4A 6A 8A 10A 12A Forward Current Characteristics Circuit Simulation result Evaluation circuit
- 4. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 4 Comparison Graph Circuit Simulation result Comparison table IF (A) VF (V) %Error Measurement Simulation 0.5 0.960 0.948 -1.25 1 0.990 0.988 -0.20 2 1.044 1.050 0.57 5 1.200 1.207 0.58 10 1.450 1.446 -0.28 12 1.540 1.540 0.00
- 5. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 5 V ( N 1 6 6 1 0 ) 100mV 1.0V 10V 100V 1.0KV I(V2)/(650V/10u) 10p 100p 1.0n 0 V1 TD = 0 TF = 500ns PW = 100us PER = 500us V1 = 0 TR = 10us V2 = 650 V2 0Vdc U1 TRS12A65C Junction Capacitance Characteristic Circuit Simulation result Evaluation circuit
- 6. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 6 Comparison Graph Circuit Simulation result Comparison table VR (V) Cj (pF) %Error Measurement Simulation 0.1 670.00 651.00 -2.84 0.2 650.00 636.20 -2.12 0.5 600.00 596.70 -0.55 1 540.00 543.30 0.61 2 460.00 465.80 1.26 5 358.00 340.00 -5.03 10 263.00 250.50 -4.75 20 190.00 180.70 -4.89 50 125.00 121.10 -3.12 100 91.00 94.90 4.29 200 75.30 78.90 4.78 500 68.00 67.30 -1.03
- 7. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 7 V _ V 1 100V 200V 300V 400V 500V 600V I(R1) 1.0nA 10nA 100nA 1.0uA 10uA V1 0Vdc R1 100m 0 U1 TRS12A65C Reverse Characteristic Circuit Simulation result Evaluation circuit
- 8. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 8 Comparison Graph Circuit Simulation result Comparison table IR (nA) VR (V) %Error Measurement Simulation 10 477.00 473.00 -0.84 100 580.00 579.50 -0.09 480 650.00 649.70 -0.05