SPICE MODEL of TRS10A65C (Professional Model) in SPICE PARK
0 likes253 views
The document is a modeling report by Bee Technologies Inc. detailing the parameters and characteristics of a Toshiba made Schottky barrier diode (part number: TRS10A65C). It includes circuit configuration, simulation results, and performance comparisons in terms of forward and reverse characteristics with error analysis. Various performance metrics such as saturation current, junction capacitance, and breakdown voltage are evaluated through circuit simulations and presented in comparison tables.
SPICE MODEL of TRS10A65C (Professional Model) in SPICE PARK
- 1. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 1 Device Modeling Report Bee Technologies Inc. COMPONENTS: SiC Schottky Barrier Diode PART NUMBER: TRS10A65C MANUFACTURER: TOSHIBA REMARK: Professional Model
- 2. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 2 Circuit Configuration DIODE MODEL PARAMETERS PSpice model parameter Model description IS Saturation Current N Emission Coefficient RS Series Resistance IKF High-injection Knee Current CJO Zero-bias Junction Capacitance M Junction Grading Coefficient VJ Junction Potential ISR Recombination Current Saturation Value BV Reverse Breakdown Voltage(a positive value) IBV Reverse Breakdown Current(a positive value) TT Transit Time EG Energy-band Gap
- 3. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 3 R1 0.01m V1 0Vdc 0 U1 TRS10A65C V _ V 1 0V 0.5V 1.0V 1.5V 2.0V I(R1) 0A 2A 4A 6A 8A 10A Forward Current Characteristics Circuit Simulation result Evaluation circuit
- 4. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 4 Comparison Graph Circuit Simulation result Comparison table IF (A) VF (V) %Error Measurement Simulation 0.5 0.955 0.956 0.10 1 1.000 1.000 0.00 2 1.070 1.068 -0.16 5 1.240 1.241 0.08 10 1.500 1.500 0.00
- 5. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 5 V ( N 1 6 6 1 0 ) 10mV 100mV 1.0V 10V 100V 1.0KV I(V2)/(650V/10u) 10p 100p 1.0n 0 V1 TD = 0 TF = 500ns PW = 100us PER = 500us V1 = 0 TR = 10us V2 = 650 V2 0Vdc U1 TRS10A65C Junction Capacitance Characteristic Circuit Simulation result Evaluation circuit
- 6. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 6 Comparison Graph Circuit Simulation result Comparison table VR (V) Cj (pF) %Error Measurement Simulation 0.1 580.000 565.540 -2.49 1 505.000 513.100 1.60 10 280.000 273.400 -2.36 20 198.000 189.300 -4.39 50 119.000 113.900 -4.29 100 85.000 83.400 -1.88 200 64.600 67.500 4.49 500 57.000 58.31 2.30
- 7. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 7 V _ V 1 100V 200V 300V 400V 500V 600V I(R1) 1.0nA 10nA 100nA 1.0uA 10uA V1 0Vdc R1 100m 0 U1 TRS10A65C Reverse Characteristic Circuit Simulation result Evaluation circuit
- 8. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 8 Comparison Graph Circuit Simulation result Comparison table IR (nA) VR (V) %Error Measurement Simulation 2 415.000 396.000 -4.58 10 485.000 480.850 -0.86 100 580.000 581.740 0.30 480 650.000 648.300 -0.26