SPICE MODEL of CUS10S40 (Professional Model) in SPICE PARK
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The document is a device modeling report for a SIC Schottky barrier diode (CUS10S40) by Bee Technologies Inc. It includes circuit configurations, PSPICE model parameters, and various simulation results comparing measured and simulated values for forward current, junction capacitance, and reverse characteristics. The analysis also provides error percentages between measurements and simulations across different testing conditions.
SPICE MODEL of CUS10S40 (Professional Model) in SPICE PARK
- 1. All Rights Reserved Copyright (C) Bee Technologies Inc. 2015 1 Device Modeling Report Bee Technologies Inc. COMPONENTS: SiC Schottky Barrier Diode PART NUMBER: CUS10S40 MANUFACTURER: TOSHIBA REMARK: Professional Model
- 2. All Rights Reserved Copyright (C) Bee Technologies Inc. 2015 2 Circuit Configuration DIODE MODEL PARAMETERS PSpice model parameter Model description IS Saturation Current N Emission Coefficient RS Series Resistance IKF High-injection Knee Current CJO Zero-bias Junction Capacitance M Junction Grading Coefficient VJ Junction Potential ISR Recombination Current Saturation Value BV Reverse Breakdown Voltage(a positive value) IBV Reverse Breakdown Current(a positive value) TT Transit Time EG Energy-band Gap
- 3. All Rights Reserved Copyright (C) Bee Technologies Inc. 2015 3 U1 CUS10S40 R1 0.01m V1 0Vdc 0 V_V1 0V 100mV 200mV 300mV 400mV 500mV 600mV I(R1) 1.0uA 10uA 100uA 1.0mA 10mA 100mA 1.0A Forward Current Characteristics Circuit Simulation result Evaluation circuit
- 4. All Rights Reserved Copyright (C) Bee Technologies Inc. 2015 4 Comparison Graph Circuit Simulation result Comparison table IF (mA) VF (V) %Error Measurement Simulation 0.1 0.041 0.042 1.45 1 0.098 0.097 -1.02 10 0.156 0.157 0.64 100 0.230 0.230 0.00 200 0.260 0.261 0.38 500 0.320 0.318 -0.63 1000 0.380 0.380 0.00 0.1 0.041 0.042 1.45
- 5. All Rights Reserved Copyright (C) Bee Technologies Inc. 2015 5 V(R) 0V 5V 10V 15V 20V 25V 30V 35V 40V I(V2)/(40V/1u) 1.0p 10p 100p 1.0n U1 CUS10S40 0 R V1 TD = 0 TF = 100ns PW = 100us PER = 10m V1 = 0 TR = 1us V2 = 40 V2 0Vdc Junction Capacitance Characteristic Circuit Simulation result Evaluation circuit
- 6. All Rights Reserved Copyright (C) Bee Technologies Inc. 2015 6 Comparison Graph Circuit Simulation result Comparison table VR(V) Ct (pF) %Error Measurement Simulation 1 80.000 79.000 -1.250 2 50.000 48.700 -2.600 5 22.000 21.800 -0.909 10 13.500 13.000 -3.704 20 10.400 9.900 -4.808 30 9.600 9.200 -4.167 40 9.000 9.140 1.556
- 7. All Rights Reserved Copyright (C) Bee Technologies Inc. 2015 7 V_V1 0V 5V 10V 15V 20V 25V 30V 35V 40V I(R1) 10uA 100uA 1.0mA U1 CUS10S40 V1 0Vdc R1 100m 0 Reverse Characteristic Circuit Simulation result Evaluation circuit
- 8. All Rights Reserved Copyright (C) Bee Technologies Inc. 2015 8 Comparison Graph Circuit Simulation result Comparison table VR (V) IR (mA) %Error Measurement Simulation 1.000 0.040 0.039 -2.75 2.000 0.044 0.041 -4.83 5.000 0.049 0.048 -2.45 10.000 0.055 0.055 -0.36 20.000 0.061 0.059 -2.62 30.000 0.063 0.061 -3.17 40.000 0.073 0.070 -3.56