SPICE MODEL of CUS15S30 (Professional Model) in SPICE PARK
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The document is a device modeling report for a SIC Schottky barrier diode (CUS15S30) by Bee Technologies Inc., detailing circuit configuration and modeling parameters. It includes simulation results for forward current characteristics, junction capacitance, and reverse characteristics, along with error comparisons between measured and simulated values. The report contains various tables and graphs illustrating the performance metrics of the device.
SPICE MODEL of CUS15S30 (Professional Model) in SPICE PARK
- 1. All Rights Reserved Copyright (C) Bee Technologies Inc. 2015 1 Device Modeling Report Bee Technologies Inc. COMPONENTS: SiC Schottky Barrier Diode PART NUMBER: CUS15S30 MANUFACTURER: TOSHIBA REMARK: Professional Model
- 2. All Rights Reserved Copyright (C) Bee Technologies Inc. 2015 2 Circuit Configuration DIODE MODEL PARAMETERS PSpice model parameter Model description IS Saturation Current N Emission Coefficient RS Series Resistance IKF High-injection Knee Current CJO Zero-bias Junction Capacitance M Junction Grading Coefficient VJ Junction Potential ISR Recombination Current Saturation Value BV Reverse Breakdown Voltage(a positive value) IBV Reverse Breakdown Current(a positive value) TT Transit Time EG Energy-band Gap
- 3. All Rights Reserved Copyright (C) Bee Technologies Inc. 2015 3 U1 CUS15S30 V1 0Vdc R1 100m 0 V_V1 0V 100mV 200mV 300mV 400mV 500mV 600mV I(R1) 100uA 1.0mA 10mA 100mA 1.0A Forward Current Characteristics Circuit Simulation result Evaluation circuit
- 4. All Rights Reserved Copyright (C) Bee Technologies Inc. 2015 4 Comparison Graph Circuit Simulation result Comparison table IF (A) VF (V) %Error Measurement Simulation 0.0001 0.0300 0.0310 3.33 0.001 0.0840 0.0820 -2.38 0.01 0.1410 0.1420 0.71 0.1 0.2140 0.2110 -1.40 0.2 0.2400 0.2390 -0.42 0.5 0.2900 0.2910 0.34 1 0.3500 0.3490 -0.29
- 5. All Rights Reserved Copyright (C) Bee Technologies Inc. 2015 5 V(R) 0V 5V 10V 15V 20V 25V 30V I(V2)/(30V/1u) 10p 100p 1.0n 0 R V1 TD = 0 TF = 100ns PW = 100us PER = 10m V1 = 0 TR = 1us V2 = 30 V2 0Vdc U1 CUS15S30 Junction Capacitance Characteristic Circuit Simulation result Evaluation circuit
- 6. All Rights Reserved Copyright (C) Bee Technologies Inc. 2015 6 Comparison Graph Circuit Simulation result Comparison table VR(V) Ct (pF) %Error Measurement Simulation 1 120.000 116.600 -2.833 2 94.000 91.800 -2.340 5 53.000 51.400 -3.019 10 29.000 29.000 0.000 20 20.770 20.000 -3.707 30 18.500 19.200 3.784
- 7. All Rights Reserved Copyright (C) Bee Technologies Inc. 2015 7 V_V1 0V 5V 10V 15V 20V 25V 30V I(R1) 10uA 100uA 1.0mA 10mA U1 CUS15S30 V1 0Vdc R1 100m 0 Reverse Characteristic Circuit Simulation result Evaluation circuit
- 8. All Rights Reserved Copyright (C) Bee Technologies Inc. 2015 8 Comparison Graph Circuit Simulation result Comparison table VR (V) IR (mA) %Error Measurement Simulation 1.000 0.056 0.058 3.57 2.000 0.070 0.069 -1.43 5.000 0.100 0.097 -3.00 10.000 0.120 0.125 4.17 20.000 0.150 0.144 -4.00 30.000 0.170 0.167 -1.76