SPICE MODEL of TRS16A65C (Professional Model) in SPICE PARK
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This document presents a device modeling report for the TRS16A65C Schottky barrier diode manufactured by Toshiba. It includes detailed circuit configurations, model parameters, and comparisons between measurement and simulation results for forward current characteristics, junction capacitance, and reverse characteristics. The report showcases the accuracy of the simulations and the relationships between various electrical characteristics of the diode.
SPICE MODEL of TRS16A65C (Professional Model) in SPICE PARK
- 1. All Rights Reserved Copyright (C) Bee Technologies Inc. 2015 1 Device Modeling Report Bee Technologies Inc. COMPONENTS: SiC Schottky Barrier Diode PART NUMBER: TRS16A65C MANUFACTURER: TOSHIBA REMARK: Professional Model
- 2. All Rights Reserved Copyright (C) Bee Technologies Inc. 2015 2 Circuit Configuration DIODE MODEL PARAMETERS PSpice model parameter Model description IS Saturation Current N Emission Coefficient RS Series Resistance IKF High-injection Knee Current CJO Zero-bias Junction Capacitance M Junction Grading Coefficient VJ Junction Potential ISR Recombination Current Saturation Value BV Reverse Breakdown Voltage(a positive value) IBV Reverse Breakdown Current(a positive value) TT Transit Time EG Energy-band Gap
- 3. All Rights Reserved Copyright (C) Bee Technologies Inc. 2015 3 U1 TRS16A65C R1 0.01m V1 0Vdc 0 V_V1 0V 0.5V 1.0V 1.5V 2.0V I(R1) 0A 2A 4A 6A 8A 10A 12A 14A 16A Forward Current Characteristics Circuit Simulation result Evaluation circuit
- 4. All Rights Reserved Copyright (C) Bee Technologies Inc. 2015 4 Comparison Graph Circuit Simulation result Comparison table IF (A) VF (V) %Error Measurement Simulation 0.1 0.890 0.890 0.00 0.2 0.910 0.911 0.11 0.5 0.941 0.943 0.21 1 0.980 0.976 -0.41 2 1.025 1.020 -0.49 5 1.140 1.137 -0.26 10 1.300 1.305 0.38 16 1.500 1.490 -0.67
- 5. All Rights Reserved Copyright (C) Bee Technologies Inc. 2015 5 V(R) 100mV 1.0V 10V 100V 1.0KV I(V2)/(650V/100u) 10p 100p 1.0n 10n 0 R V1 TD = 0 TF = 100ns PW = 100us PER = 10m V1 = 0 TR = 100us V2 = 650 V2 0Vdc U1 TRS16A65C Junction Capacitance Characteristic Circuit Simulation result Evaluation circuit
- 6. All Rights Reserved Copyright (C) Bee Technologies Inc. 2015 6 Comparison Graph Circuit Simulation result Comparison table VR(V) Cj (pF) %Error Measurement Simulation 0.1 1000.000 957.000 -4.30 0.2 950.000 938.000 -1.26 0.5 900.000 885.000 -1.67 1 800.000 810.000 1.25 2 700.000 701.000 0.14 5 540.000 518.000 -4.07 10 400.000 384.000 -4.00 20 290.000 276.000 -4.83 50 185.000 182.000 -1.62 100 138.000 139.000 0.72 200 108.000 113.000 4.63 500 90.000 93.600 4.00
- 7. All Rights Reserved Copyright (C) Bee Technologies Inc. 2015 7 V_V1 100V 200V 300V 400V 500V 600V I(R1) 1.0nA 10nA 100nA 1.0uA 10uA U1 TRS16A65C V1 0Vdc R1 100m 0 Reverse Characteristic Circuit Simulation result Evaluation circuit
- 8. All Rights Reserved Copyright (C) Bee Technologies Inc. 2015 8 Comparison Graph Circuit Simulation result Comparison table IR (A) VR (V) %Error Measurement Simulation 1.00E-08 491.000 485.000 -1.22 1.00E-07 588.000 589.000 0.17 4.00E-07 650.000 649.000 -0.15