SPICE MODEL of TRS6E65C (Professional Model) in SPICE PARK
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The document presents a device modeling report for the TRS6E65C Schottky barrier diode manufactured by Toshiba, detailing its circuit configuration and key model parameters for simulation in PSPICE. It includes simulation results for forward current, junction capacitance, and reverse characteristics, providing comparison tables that illustrate measurement versus simulation values along with percentage errors. The report is authored by Bee Technologies Inc. and is copyright protected.
SPICE MODEL of TRS6E65C (Professional Model) in SPICE PARK
- 1. Device Modeling Report COMPONENTS: SiC Schottky Barrier Diode PART NUMBER: TRS6E65C MANUFACTURER: TOSHIBA REMARK: Professional Model Bee Technologies Inc. All Rights Reserved Copyright (C) Bee Technologies Inc. 2013 1
- 2. Circuit Configuration TRS6E65C DIODE MODEL PARAMETERS PSpice model parameter IS N RS IKF CJO M VJ ISR BV IBV TT EG Model description Saturation Current Emission Coefficient Series Resistance High-injection Knee Current Zero-bias Junction Capacitance Junction Grading Coefficient Junction Potential Recombination Current Saturation Value Reverse Breakdown Voltage(a positive value) Reverse Breakdown Current(a positive value) Transit Time Energy-band Gap All Rights Reserved Copyright (C) Bee Technologies Inc. 2013 2
- 3. Forward Current Characteristics Circuit Simulation result 6.0A 5.0A 4.0A 3.0A 2.0A 1.0A 0A 0V 0.5V 1.0V 1.5V 2.0V I(R1) V_V1 Evaluation circuit R1 0.01m V1 U1 TRS6E65C 0Vdc 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2013 3
- 4. Comparison Graph Circuit Simulation result Comparison table VF (V) IF (A) Measurement Simulation %Error 0.1 0.912 0.906 -0.66 1 1.035 1.040 0.48 2 1.140 1.140 0.00 4 1.320 1.322 0.15 6 1.500 1.497 -0.20 All Rights Reserved Copyright (C) Bee Technologies Inc. 2013 4
- 5. Junction Capacitance Characteristic Circuit Simulation result 1.0n 100p 10p 100mV I(V2)/(650V/1u) 1.0V 10V 100V V(N16610) Evaluation circuit V2 0Vdc V2 = 650 V1 = 0 TD = 0 TR = 1us TF = 500ns PW = 100us PER = 500us U1 TRS6E65C V1 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2013 5
- 6. Comparison Graph Circuit Simulation result Comparison table CT (pF) VR(V) Measurement Simulation %Error 0.1 390.200 403.037 3.29 0.2 385.200 396.300 2.88 0.5 367.100 374.600 2.04 1 337.300 345.500 2.43 2 295.400 303.500 2.74 5 229.200 235.600 2.79 10 180.300 183.753 1.92 20 136.700 139.000 1.68 50 91.500 94.100 2.84 100 67.500 70.000 3.70 All Rights Reserved Copyright (C) Bee Technologies Inc. 2013 6
- 7. Reverse Characteristic Circuit Simulation result 10uA 1.0uA 100nA 10nA 1.0nA 100V I(R1) 200V 300V 400V 500V 600V V_V1 Evaluation circuit R1 100m V1 U1 TRS6E65C 0Vdc 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2013 7
- 8. Comparison Graph Circuit Simulation result Comparison table IR (A) VR (V) Measurement Simulation %Error 2.00E-09 430.00 415.35 -3.41 1.00E-08 501.00 501.17 0.03 1.00E-07 600.00 601.59 0.27 3.00E-07 650.00 648.00 -0.31 All Rights Reserved Copyright (C) Bee Technologies Inc. 2013 8