SPICE MODEL of CBS10S40 (Professional Model) in SPICE PARK
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The document provides a device modeling report for a SiC Schottky Barrier Diode. It includes the diode model parameters, results of circuit simulations to characterize the diode's forward and reverse current characteristics and junction capacitance, and comparisons of the simulation results to measurement data showing good agreement within a few percent error.
SPICE MODEL of CBS10S40 (Professional Model) in SPICE PARK
- 1. All Rights Reserved Copyright (C) Bee Technologies Inc. 2015 1 Device Modeling Report Bee Technologies Inc. COMPONENTS: SiC Schottky Barrier Diode PART NUMBER: CBS10S40 MANUFACTURER: TOSHIBA REMARK: Professional Model
- 2. All Rights Reserved Copyright (C) Bee Technologies Inc. 2015 2 Circuit Configuration DIODE MODEL PARAMETERS PSpice model parameter Model description IS Saturation Current N Emission Coefficient RS Series Resistance IKF High-injection Knee Current CJO Zero-bias Junction Capacitance M Junction Grading Coefficient VJ Junction Potential ISR Recombination Current Saturation Value BV Reverse Breakdown Voltage(a positive value) IBV Reverse Breakdown Current(a positive value) TT Transit Time EG Energy-band Gap
- 3. All Rights Reserved Copyright (C) Bee Technologies Inc. 2015 3 U1 CBS10S40 R1 0.01m V1 0Vdc 0 V_V1 0V 100mV 200mV 300mV 400mV 500mV I(R1) 1.0uA 10uA 100uA 1.0mA 10mA 100mA 1.0A Forward Current Characteristics Circuit Simulation result Evaluation circuit
- 4. All Rights Reserved Copyright (C) Bee Technologies Inc. 2015 4 Comparison Graph Circuit Simulation result Comparison table IF (mA) VF (V) %Error Measurement Simulation 0.01 0.0068 0.0071 3.82 0.1 0.0365 0.0376 3.01 1 0.0935 0.0914 -2.25 10 0.1530 0.1520 -0.65 100 0.2300 0.2303 0.13 1000 0.4000 0.4000 0.00
- 5. All Rights Reserved Copyright (C) Bee Technologies Inc. 2015 5 V(R) 0V 5V 10V 15V 20V 25V 30V 35V 40V I(V2)/(40V/1u) 1.0p 10p 100p 1.0n U1 CBS10S40 0 R V1 TD = 0 TF = 100ns PW = 100us PER = 10m V1 = 0 TR = 1us V2 = 40 V2 0Vdc Junction Capacitance Characteristic Circuit Simulation result Evaluation circuit
- 6. All Rights Reserved Copyright (C) Bee Technologies Inc. 2015 6 Comparison Graph Circuit Simulation result Comparison table VR(V) Ct (pF) %Error Measurement Simulation 1 80.000 80.000 0.000 2 55.000 53.400 -2.909 5 22.900 23.800 3.930 10 13.800 13.300 -3.623 20 10.340 9.930 -3.965 30 9.500 9.400 -1.053 40 9.200 9.530 3.587
- 7. All Rights Reserved Copyright (C) Bee Technologies Inc. 2015 7 V_V1 0V 10V 20V 30V 40V I(R1) 10uA 100uA 1.0mA U1 CBS10S40 V1 0Vdc R1 100m 0 Reverse Characteristic Circuit Simulation result Evaluation circuit
- 8. All Rights Reserved Copyright (C) Bee Technologies Inc. 2015 8 Comparison Graph Circuit Simulation result Comparison table VR (V) IR (mA) %Error Measurement Simulation 1.000 0.039 0.040 3.90 2.000 0.044 0.043 -2.71 5.000 0.052 0.050 -3.50 10.000 0.056 0.057 1.44 20.000 0.059 0.060 3.25 30.000 0.063 0.062 -1.11 40.000 0.075 0.075 0.27