SPICE MODEL of SPD02N60C3 (Professional+BDSP Model) in SPICE PARK
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This document provides a detailed modeling report for the SPD02N60C3 power MOSFET manufactured by Infineon Technologies, including specifications for the device, characteristics of the body diode, and various circuit simulation results. It includes data on transconductance, capacitance, switching time, and output characteristics, along with comparisons between measurement and simulation results highlighting errors. The report concludes with a summary of the performance metrics aimed at evaluating the device's efficiency in circuit applications.
SPICE MODEL of SPD02N60C3 (Professional+BDSP Model) in SPICE PARK
- 1. Device Modeling Report COMPONENTS: Power MOSFET (Professional) PART NUMBER: SPD02N60C3 MANUFACTURER: Infineon technologies REMARK: Body Diode (Special) Bee Technologies Inc. All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
- 2. POWER MOSFET MODEL Pspice model Model description parameter LEVEL L Channel Length W Channel Width KP Transconductance RS Source Ohmic Resistance RD Ohmic Drain Resistance VTO Zero-bias Threshold Voltage RDS Drain-Source Shunt Resistance TOX Gate Oxide Thickness CGSO Zero-bias Gate-Source Capacitance CGDO Zero-bias Gate-Drain Capacitance CBD Zero-bias Bulk-Drain Junction Capacitance MJ Bulk Junction Grading Coefficient PB Bulk Junction Potential FC Bulk Junction Forward-bias Capacitance Coefficient RG Gate Ohmic Resistance IS Bulk Junction Saturation Current N Bulk Junction Emission Coefficient RB Bulk Series Resistance PHI Surface Inversion Potential GAMMA Body-effect Parameter DELTA Width effect on Threshold Voltage ETA Static Feedback on Threshold Voltage THETA Modility Modulation KAPPA Saturation Field Factor VMAX Maximum Drift Velocity of Carriers XJ Metallurgical Junction Depth UO Surface Mobility All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
- 3. Body Diode Model Pspice model Model description parameter IS Saturation Current N Emission Coefficient RS Series Resistance IKF High-injection Knee Current CJO Zero-bias Junction Capacitance M Junction Grading Coefficient VJ Junction Potential ISR Recombination Current Saturation Value BV Reverse Breakdown Voltage(a positive value) IBV Reverse Breakdown Current(a positive value) TT Transit Time All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
- 4. Transconductance Characteristic Circuit Simulation Result Comparison table gfs (S) ID(A) Error (%) Measurement Simulation 0.2 0.675 0.685 1.48 0.5 1.1 1.08 -1.82 1 1.53 1.52 -0.65 2 2.1 2.1275 1.31 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
- 5. Vgs-Id Characteristic Circuit Simulation result 2.0A 1.0A 0A 0V 5V 10V I(V2) V_V1 Evaluation circuit V2 0V dc U1 V3 V1SP D0 2N6 0C3P_ DS P 10 Vd c 10 .0Vd c 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
- 6. Comparison Graph Circuit Simulation Result Simulation Result VGS(V) ID(A) Error (%) Measurement Simulation 0.2 3.945 3.9604 0.39 0.5 4.295 4.3003 0.123 1 4.675 4.6851 0.216 2 5.24 5.2322 -0.149 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
- 7. Id-Rds(on) Characteristic Circuit Simulation result 2.0A 1.0A 0A 0V 2.5V 5.0V I(V2) V_V3 Evaluation circuit V2 0Vdc U1 V3 V1SPD02N60C3P_DSP 10Vdc 10.0Vdc 0 Simulation Result ID=1.1, VGS=10V Measurement Simulation Error (%) R DS (on) 2.291 2.2911 0.004 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
- 8. Id-Rds(on) Characteristic Reference All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
- 9. Gate Charge Characteristic Circuit Simulation result 16V 14V 12V 10V 8V 6V 4V 2V 0V 0 2n 4n 6n 8n 10n 12n 14n V(W1:3) Time*10ms Evaluation circuit V2 0V dc Db reak PE R = 10 00 u D1 PW = 6 00 u U2 I2 TF = 10 n W1 SP D0 2N6 0C3P_ DS P 1.8 Adc TR = 10n + TD = 0 I2 = 1 0m - I1 W I1 = 0 IOFF = 1mA V1 ION = 0 uA 52 0V dc 0 Simulation Result VDD=520V,ID=1.8A Measurement Simulation Error (%) Qgs 1.6 nC 1.6095 nC 0.59 Qgd 4.4 nC 4.3959 nC -0.09 Qg 9.5 nC 96.45 nC 1.53 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
- 10. Capacitance Characteristic Measurement Simulation Simulation Result Cbd(pF) VDS(V) Error(%) Measurement Simulation 0 354 354.15 0.042373 10 200 199.77 -0.115 25 86 85.5 -0.581395 50 21 21.4 1.904762 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
- 11. Switching Time Characteristic Circuit Simulation result 12V VDS =380 (V) VGS = 10V 8V 4V 0V 5.00us 5.05us 5.10us 5.15us V(2) V(3)/35 Time Evaluation circuit L1 RL 3 V3 0.05uH 192 0Vdc VDD 350 L2 RG 2 0.03uH 50 U2 V1 = 0 SPD02N60C3P_DSP 0 V1 V2 = 10 TD = 5u TR = 6n TF = 7n PW = 10u PER = 100u 0 0 Simulation Result ID=1.8A, VDD=350V Measurement Simulation Error(%) VGS=0/10V td (on) 6.000 ns 6.089 ns 1.483 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
- 12. Output Characteristic Circuit Simulation result 2.0A 7.0V 6.0V 5.0V 1.0A 4.5V VGS=4.0V 0A 0V 10V 20V I(V2) V_V3 Evaluation circuit V2 0V dc U1 V3 V1SP D0 2N6 0C3P_ DS P 10 Vd c 10 .0Vd c 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
- 13. Output Characteristic Reference All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
- 14. Forward Current Characteristic of Reverse Diode Circuit Simulation Result 2.0A 1.0A 0A 0V 1.0V 2.0V I(V2) V_V3 Evaluation Circuit R1 0.0 1m V2 U1 SP D0 2N6 0C3P_ DS P 0V dc V3 0V dc 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
- 15. Comparison Graph Circuit Simulation Result Simulation Result Vfwd(V) Vfwd(V) Ifwd(A) %Error Measurement Simulation 0.01 0.598 0.602187 0.700 0.02 0.634 0.627996 -0.947 0.05 0.662 0.662797 0.120 0.1 0.690 0.690066 0.010 0.2 0.718 0.719109 0.154 0.5 0.764 0.763462 -0.070 1 0.806 0.806715 0.089 2 0.868 0.867726 -0.032 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
- 16. Forward Current Characteristic Reference All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
- 17. Reverse Recovery Characteristic Circuit Simulation Result 10A 0A -10A 10.0us 10.1us 10.2us 10.3us 10.4us 10.5us I(R1) Time Evaluation Circuit R1 1 10 U1 D02N60C3_SP V1 = -420 V2 = 90 V1 TD = 0 TR = 20n TF = {20*X} PW = 1u PER = 10u 0 PARAMETERS: X = 25.5n 0 Compare Measurement vs. Simulation Measurement Simulation Error(%) trr 200 ns 200.27 ns 0.135 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005