SPICE MODEL of IRFB9N60A (Professional+BDP Model) in SPICE PARK
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The document provides a detailed device modeling report for the IRFB9N60A power MOSFET, including key specifications, circuit simulation results, and measurements for various parameters such as transconductance, capacitance, and switching times. It outlines characteristics of the body diode and presents comparative data between measurement and simulation results. All content is copyrighted by Bee Technologies Inc. (2005).
SPICE MODEL of IRFB9N60A (Professional+BDP Model) in SPICE PARK
- 1. Device Modeling Report COMPONENTS: Power MOSFET (Professional) PART NUMBER: IRFB9N60A MANUFACTURER: International Rectifier REMARK: Body Diode (Professional) Bee Technologies Inc. All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
- 2. POWER MOSFET MODEL Pspice model Model description parameter LEVEL L Channel Length W Channel Width KP Transconductance RS Source Ohmic Resistance RD Ohmic Drain Resistance VTO Zero-bias Threshold Voltage RDS Drain-Source Shunt Resistance TOX Gate Oxide Thickness CGSO Zero-bias Gate-Source Capacitance CGDO Zero-bias Gate-Drain Capacitance CBD Zero-bias Bulk-Drain Junction Capacitance MJ Bulk Junction Grading Coefficient PB Bulk Junction Potential FC Bulk Junction Forward-bias Capacitance Coefficient RG Gate Ohmic Resistance IS Bulk Junction Saturation Current N Bulk Junction Emission Coefficient RB Bulk Series Resistance PHI Surface Inversion Potential GAMMA Body-effect Parameter DELTA Width effect on Threshold Voltage ETA Static Feedback on Threshold Voltage THETA Modility Modulation KAPPA Saturation Field Factor VMAX Maximum Drift Velocity of Carriers XJ Metallurgical Junction Depth UO Surface Mobility All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
- 3. Body Diode Model Pspice model Model description parameter IS Saturation Current N Emission Coefficient RS Series Resistance IKF High-injection Knee Current CJO Zero-bias Junction Capacitance M Junction Grading Coefficient VJ Junction Potential ISR Recombination Current Saturation Value BV Reverse Breakdown Voltage(a positive value) IBV Reverse Breakdown Current(a positive value) TT Transit Time All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
- 4. Transconductance Characteristic Circuit Simulation Result Comparison table gfs (S) ID(A) Error (%) Measurement Simulation 0.5 2.5 2.565 2.60 1 3.63 3.591 1.07 2 5 5.005 0.10 5 7.69 7.69 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
- 5. Vgs-Id Characteristic Circuit Simulation result 40A 10A 1.0A 100mA 4V 5V 6V 7V 8V 9V 10V I(V2) V_V1 Evaluation circuit V2 0V dc V3 V1 10 Vd c 50 Vd c 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
- 6. Comparison Graph Circuit Simulation Result Simulation Result VGS(V) ID(A) Error (%) Measurement Simulation 1.000 4.875 4.898 0.478 2.000 5.125 5.131 0.111 5.000 5.625 5.602 -0.411 10.000 6.125 6.149 0.393 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
- 7. Id-Rds(on) Characteristic Circuit Simulation result 5.0A 0A 0V 5V 10V I(V2) V_V3 Evaluation circuit V2 0Vdc V3 V1 50Vdc 10.0Vdc 0 Simulation Result ID=5.5, VGS=10V Measurement Simulation Error (%) R DS (on) 0.75 0.75 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
- 8. Gate Charge Characteristic Circuit Simulation result 20V 16V 12V 8V 4V 0V 0 10n 20n 30n 40n 50n V(W1:3) Time*10ms Evaluation circuit V2 0Vdc Dbreak PER = 1000u D1 PW = 600u I2 TF = 10n W1 TR = 10n + 9.2Adc TD = 0 I2 = 10m - I1 W I1 = 0 IOFF = 1mA V1 ION = 0uA 300Vdc 0 Simulation Result VDD=300V,ID=9.2A Measurement Simulation Error (%) Qgs 8.750 nC 8.736 nC -0.160 Qgd 12.000 nC 12.033 nC 0.275 Qg 32.250 nC 32.253 nC 0.009 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
- 9. Capacitance Characteristic Measurement Simulation Simulation Result Cbd(pF) VDS(V) Error(%) Measurement Simulation 10.000 300.000 294.000 -2.000 20.000 197.500 196.900 -0.304 50.000 115.000 114.400 -0.522 100.000 78.000 76.000 -2.564 200.000 50.000 50.500 1.000 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
- 10. Switching Time Characteristic Circuit Simulation result 12V VDS =300 (V) VGS = 10V 8V 4V 0V 5.00us 5.05us 5.10us 5.15us V(2) V(3)/30 Time Evaluation circuit L1 RL 3 V3 0.0 5uH 31 .8 0V dc VDD 30 0 L2 RG 2 0.0 3uH V1 = 0 V1 9.1 V2 = 10 0 TD = 5u TR = 6n TF = 7n PW = 5 u PE R = 10 0u 0 0 Simulation Result ID=9.2A, VDD=300V Measurement Simulation Error(%) VGS=0/10V td (on) 13.000 ns 13.006 ns 0.046 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
- 11. Output Characteristic Circuit Simulation result 20A 10.0V 7.0V 10A 6.0V 5.5V VGS=5.0V 0A 0V 25V 50V I(V2) V_V3 Evaluation circuit V2 0V dc V3 V1 50 Vd c 10 .0Vd c 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
- 12. Forward Current Characteristic of Reverse Diode Circuit Simulation Result 50A 10A 1.0A 100mA 0.2V 0.5V 1.0V 1.2V I(V2) V_V3 Evaluation Circuit R1 0.0 1m V2 0V dc V3 0V dc 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
- 13. Comparison Graph Circuit Simulation Result Simulation Result Vfwd(V) Vfwd(V) Ifwd(A) %Error Measurement Simulation 0.200 0.523 0.525 0.325 0.500 0.567 0.565 -0.423 1.000 0.600 0.600 0.012 2.000 0.646 0.645 -0.146 5.000 0.734 0.737 0.354 10.000 0.859 0.858 -0.105 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
- 14. Reverse Recovery Characteristic Circuit Simulation Result 400mA 0A -400mA 8us 10us 14us 16us 18us 22us 24us 28us I(R1) Time Evaluation Circuit R1 50 V1 = {-9.4} V1 V2 = {10.7} TD = 1.275u TR = 10n TF = 10n PW = 15u PER = 100u 0 0 Compare Measurement vs. Simulation Measurement Simulation Error(%) trj 1.080 us 1.083 us 0.278 trb 0.640 us 0.635 us -0.781 trr 1.720 us 1.718 us -0.116 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
- 15. Reverse Recovery Characteristic Reference Measurement trj = 1.08(us) trb = 0.64(us) Conditions: Ifwd=Irev=0.2(A), Rl=50 Example Relation between trj and trb All Rights Reserved Copyright (c) Bee Technologies Inc. 2005