SPICE MODEL of SSM3K7002AF (Professional+BDP Model) in SPICE PARK
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This document is a device modeling report for the SSM3K7002AF power MOSFET by Toshiba, detailing its electrical characteristics and performance metrics. It includes measurements and simulations related to transconductance, gate charge, capacitance, switching time, and output characteristics, all with accompanying error percentages. The report emphasizes the comparison between measurement data and simulation results, providing insights into the device's behavior in various operating conditions.
SPICE MODEL of SSM3K7002AF (Professional+BDP Model) in SPICE PARK
- 1. Device Modeling Report COMPONENTS: Power MOSFET (Professional Model) PART NUMBER: SSM3K7002AF MANUFACTURER: TOSHIBA Body Diode (Professional Model) Bee Technologies Inc. All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
- 2. MOSFET MODEL PSpice model Model description parameter LEVEL L Channel Length W Channel Width KP Transconductance RS Source Ohmic Resistance RD Ohmic Drain Resistance VTO Zero-bias Threshold Voltage RDS Drain-Source Shunt Resistance TOX Gate Oxide Thickness CGSO Zero-bias Gate-Source Capacitance CGDO Zero-bias Gate-Drain Capacitance CBD Zero-bias Bulk-Drain Junction Capacitance MJ Bulk Junction Grading Coefficient PB Bulk Junction Potential FC Bulk Junction Forward-bias Capacitance Coefficient RG Gate Ohmic Resistance IS Bulk Junction Saturation Current N Bulk Junction Emission Coefficient RB Bulk Series Resistance PHI Surface Inversion Potential GAMMA Body-effect Parameter DELTA Width effect on Threshold Voltage ETA Static Feedback on Threshold Voltage THETA Mobility Modulation KAPPA Saturation Field Factor VMAX Maximum Drift Velocity of Carriers XJ Metallurgical Junction Depth UO Surface Mobility All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
- 3. Transconductance Characteristic Circuit Simulation Result 500 Measurement 450 Simulation 400 Transconductance GFS (ms) 350 300 250 200 150 100 50 0 0 20 40 60 80 100 120 140 160 180 200 Drain Current ID (mA) Comparison table gfs (ms) ID (mA) Error (%) Measurement Simulation 1 21.600 22.390 3.66 2 31.300 31.693 1.26 5 50.000 50.132 0.26 10 70.600 70.897 0.42 20 99.300 100.144 0.85 50 156.000 158.418 1.55 100 222.000 223.893 0.85 200 313.000 316.342 1.07 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
- 4. Vgs-Id Characteristic Circuit Simulation result 1.0A 100mA 10mA 1.0mA 0V 1.0V 2.0V 3.0V 4.0V 5.0V 6.0V 7.0V I(V2) V_V1 Evaluation circuit V2 0Vdc U1 SSM3K7002AF Vv ariable V1 0Vdc 10Vdc 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
- 5. Comparison Graph Circuit Simulation Result Simulation Result VGS(V) ID (mA) Error (%) Measurement Simulation 1 1.250 1.277 2.14 2 1.300 1.314 1.05 5 1.400 1.387 -0.93 10 1.490 1.470 -1.37 20 1.610 1.587 -1.46 50 1.850 1.818 -1.71 100 2.110 2.080 -1.42 200 2.500 2.450 -2.00 500 3.270 3.186 -2.58 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
- 6. Rds(on) Characteristic Circuit Simulation result 500mA 400mA 300mA 200mA 100mA 0A 0V 150mV 300mV 450mV 600mV 750mV I(V3) V_VDS Evaluation circuit V3 0Vdc VDS U1 SSM3K7002AF 10Vdc VGS 10Vdc 0 c Simulation Result ID = 0.5A, VGS = 10V Measurement Simulation Error (%) R DS (on) 1.5 1.5 0.00 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
- 7. Gate Charge Characteristic Circuit Simulation result 12V 10V 8V 6V 4V 2V 0V 0 0.2n 0.4n 0.6n 0.8n 1.0n 1.2n 1.4n 1.6n 1.8n V(W1:3) Time*1mS Evaluation circuit V2 0Vdc Dbreak U1 SSM3K7002AF D1 I2 PER = 1000u W1 0.2Adc PW = 600u + TF = 10n TR = 10n - TD = 0 W I2 = 1m IOFF = 0.1mA V1 I1 = 0 I1 ION = 0uA 30Vds 0 Simulation Result VDD=30V, ID=0.2A, Measurement Simulation Error (%) VGS=10V Qgs nC 0.230 0.229 -0.43 Qgd nC 0.300 0.299 -0.33 Qg nC 1.600 1.630 1.87 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
- 8. Gate Charge Characteristic Reference 12 VDD=30V 10 8 VGS (V) 6 4 2 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 Qg (nC) All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
- 9. Capacitance Characteristic Measurement Simulation Simulation Result Cbd (pF) VDS (V) Error (%) Measurement Simulation 1 11.00 11.23 -2.05 2 10.00 10.20 -1.96 5 8.30 8.40 -1.19 10 6.70 6.65 0.75 20 4.90 4.97 -1.33 50 2.83 2.90 -2.41 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
- 10. Switching Time Characteristic Circuit Simulation result 12V 10V 8V 6V 4V 2V 0V -2V 1.97us 1.98us 1.99us 2.00us 2.01us 2.02us 2.03us V(L3:1) V(L2:1)/3 Time Evaluation circuit L2 50nH RL 150 U1 R2 L3 SSM3K7002AF V1 = 0 50 30nH VDD V2 = 20 V2 30 TD = 2us R3 TR = 5ns 50 TF = 5ns PW = 10us PER = 100us 0 Simulation Result ID=0.2A, VDD=30V Measurement Simulation Error (%) VGS=0/10V td(on) ns 3.00 2.95 -1.67 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
- 11. Output Characteristic Circuit Simulation result 800mA 10 7 5 4.5 700mA 4.0 600mA 500mA 3.3 400mA 3.0 300mA 2.7 2.5 200mA 100mA VGS=2.3V 0A 0V 0.4V 0.8V 1.2V 1.6V 2.0V I(Vdsense) V_Vvariable Evaluation circuit Vdsense 0Vdc U1 SSM3K7002AF Vv ariable 0Vdc Vstep 10Vdc 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
- 12. Forward Current Characteristic Circuit Simulation result 1.0A 0.9A 0.8A 0.7A 0.6A 0.5A 0.4A 0.3A 0.2A 0.1A 0A 0V 0.2V 0.4V 0.6V 0.8V 1.0V 1.2V 1.4V 1.6V 1.8V I(R1) V_V1 Evaluation Circuit R1 0.01m U1 V1 D3K7002AF_PRO 0Vdc 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
- 13. Comparison Graph Circuit Simulation Result Simulation Result VSD(V) IDR(mA) %Error Measurement Simulation 10 0.600 0.596 -0.62 20 0.660 0.657 -0.53 50 0.743 0.750 0.89 100 0.830 0.838 1.00 200 0.950 0.949 -0.12 500 1.140 1.137 -0.31 800 1.260 1.261 0.09 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
- 14. Reverse Recovery Characteristics Circuit Simulation Result 400mA 300mA 200mA 100mA -0mA -100mA -200mA -300mA -400mA 19.88us 19.96us 20.04us 20.12us 20.20us 20.28us I(R1) Evaluation Circuit Time R1 50 V1 = -9.3V V1 U1 V2 = 10.9V D3K7002AF_PRO TD = 19ns TR = 10ns TF = 20ns PW = 20us PER = 100us 0 Compare Measurement vs. Simulation Measurement Simulation Error (%) trj ns 21.60 21.36 -1.11 trb ns 20.00 20.00 0.00 trr ns 41.60 41.36 -0.58 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
- 15. Reverse Recovery Characteristics Reference Measurement trj=21.60(ns) trb=20.00(ns) Conditions:Ifwd=lrev=0.2(A),Rl=50 Example Relation between trj and trb All Rights Reserved Copyright (c) Bee Technologies Inc. 2008