SPICE MODEL of TPCM8002-H (Professional+BDP Model) in SPICE PARK
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The document is a device modeling report for the Toshiba power MOSFET model TPCM8002-H, detailing its characteristics and circuit simulation results. It includes various parameters such as transconductance, gate charge, and output characteristics, along with measurement comparisons and simulation data. All content is copyrighted by Bee Technologies Inc. (2008).
SPICE MODEL of TPCM8002-H (Professional+BDP Model) in SPICE PARK
- 1. Device Modeling Report COMPONENTS: Power MOSFET (Professional) PART NUMBER: TPCM8002-H MANUFACTURER: TOSHIBA Body Diode (Professional) Bee Technologies Inc. All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
- 2. MOSFET MODEL Pspice model Model description parameter LEVEL L Channel Length W Channel Width KP Transconductance RS Source Ohmic Resistance RD Ohmic Drain Resistance VTO Zero-bias Threshold Voltage RDS Drain-Source Shunt Resistance TOX Gate Oxide Thickness CGSO Zero-bias Gate-Source Capacitance CGDO Zero-bias Gate-Drain Capacitance CBD Zero-bias Bulk-Drain Junction Capacitance MJ Bulk Junction Grading Coefficient PB Bulk Junction Potential FC Bulk Junction Forward-bias Capacitance Coefficient RG Gate Ohmic Resistance IS Bulk Junction Saturation Current N Bulk Junction Emission Coefficient RB Bulk Series Resistance PHI Surface Inversion Potential GAMMA Body-effect Parameter DELTA Width effect on Threshold Voltage ETA Static Feedback on Threshold Voltage THETA Modility Modulation KAPPA Saturation Field Factor VMAX Maximum Drift Velocity of Carriers XJ Metallurgical Junction Depth UO Surface Mobility All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
- 3. Transconductance Characteristic Circuit Simulation Result 100 Measurement 90 Simulation 80 70 60 gfs 50 40 30 20 10 0 0 4 8 12 16 20 ID : Drain Current A Comparison table gfs Id(A) Error(%) Measurement Simulation 0.100 1.100 1.111 1.000 0.200 3.200 3.333 4.156 0.500 8.000 8.333 4.163 1.000 12.000 12.500 4.167 2.000 19.366 20.222 4.420 5.000 32.667 33.250 1.785 10.000 46.000 47.619 3.520 20.000 67.333 68.966 2.425 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
- 4. Vgs-Id Characteristic Circuit Simulation result 20A 16A 12A 8A 4A 0A 0V 1.0V 2.0V 3.0V 4.0V 5.0V I(V3) V_V2 Evaluation circuit V3 0Vdc U1 TPCM8002-H Vv ariable 10Vdc 10Vdc V2 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
- 5. Comparison Graph Circuit Simulation Result 20.000 Measurement Simulation 16.000 ID : Drain Current A 12.000 8.000 4.000 0.000 0.00 1.00 2.00 3.00 4.00 5.00 VGS : Gate to Source Voltage V Simulation Result VGS(V) ID(A) Error (%) Measurement Simulation 0.100 2.600 2.587 -0.500 0.200 2.620 2.607 -0.496 0.500 2.650 2.641 -0.340 1.000 2.700 2.678 -0.815 2.000 2.780 2.731 -1.763 5.000 2.950 2.836 -3.864 10.000 3.100 2.957 -4.613 20.000 3.200 3.131 -2.156 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
- 6. Rds(on) Characteristic Circuit Simulation result 20A 18A 16A 14A 12A 10A 8A 6A 4A 2A 0A 0V 10mV 20mV 30mV 40mV 50mV 60mV 70mV 80mV 90mV I(V3) V_VDS Evaluation circuit V3 0Vdc U1 TPCM8002-H VDS 10Vdc 0Vdc VGS 0 Simulation Result ID=15A, VGS=10V Measurement Simulation Error (%) R DS (on) (m) 4.700 4.697 -0.064 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
- 7. Gate Charge Characteristic Circuit Simulation result 20V 16V 12V 8V 4V 0V 0 10n 20n 30n 40n 50n V(W1:3) Time*1mS Evaluation circuit V2 0Vdc U1 TPCM8002-H Dbreak PER = 1000u D1 PW = 600u W1 I2 TF = 10n + 30Adc TR = 10n - TD = 0 I2 = 1m W I1 = 0 I1 IOFF = 0.1mA ION = 0uA V1 24Vdc 0 Simulation Result VDD=24V,ID=30A Measurement Simulation Error (%) ,VGS=10V Qgs(nc) 7.500 7.500 0.000 Qgd(nc) 6.000 6.006 0.100 Qg(nc) 32.500 32.590 0.277 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
- 8. Capacitance Characteristic Measurement Simulation Simulation Result Cbd(nF) VDS(V) Error(%) Measurement Simulation 0.100 1.150 1.152 0.174 1.000 0.820 0.805 -1.829 10.000 0.330 0.325 -1.515 30.000 0.190 0.192 1.053 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
- 9. Switching Time Characteristic Circuit Simulation result 20V 15V 10V 5V 0V 1.80us 1.90us 2.00us 2.10us 2.20us 2.30us V(2) V(3)/1.5 Time Evaluation circuit 3 L2 50nH U1 TPCM8002-H RL 1 R1 L1 2 V1 = 0 4.7 30nH VDD V2 = 20 V2 TD = 2u R2 TR = 6n 15Vdc TF = 7n 4.7 PW = 2u PER = 10u 0 Simulation Result ID=15A, VDD=15V Measurement Simulation Error(%) VGS=10V Ton(ns) 13.000 13.073 0.562 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
- 10. Output Characteristic Circuit Simulation result 50A 3.8V 3.7V 40A 3.6V 30A 3.5V 20A 3.3V 10A 0A VGS= 3.0V 0V 0.2V 0.4V 0.6V 0.8V 1.0V 1.2V 1.4V 1.6V 1.8V 2.0V I(Vdsense) V_Vvariable Evaluation circuit Vdsense 0Vdc U1 TPCM8002-H Vv ariable 2Vdc Vstep 3Vdc 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
- 11. Forward Current Characteristic Circuit Simulation Result 100A 10A 1.0A 0V 0.2V 0.4V 0.6V 0.8V 1.0V I(R1) V_V1 Evaluation Circuit R1 0.01m V1 U1 0Vdc TPCM8002-H 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
- 12. Comparison Graph Circuit Simulation Result 100.00 Measurement Simulation Drain reverse current IDR(A) 10.00 1.00 0 0.2 0.4 0.6 0.8 1 Source-Drain voltage VSD(V) Simulation Result IDR(A) VSD(V) VSD(V) %Error Measurement Simulation 1.000 0.680 0.679 -0.147 2.000 0.700 0.698 -0.286 5.000 0.725 0.728 0.414 10.000 0.755 0.758 0.397 20.000 0.800 0.797 -0.375 50.000 0.870 0.872 0.230 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
- 13. Reverse Recovery Characteristic Circuit Simulation Result 400mA 200mA 0A -200mA -400mA 19.92us 20.00us 20.08us 20.16us 20.24us 20.32us I(R1) Time Evaluation Circuit R1 50 V1 = -9.4v V1 V2 = 10.7v U1 TD = 30n DTPCM8002-H TR = 10ns TF = 10ns PW = 20us PER = 100us 0 Compare Measurement vs. Simulation Measurement Simulation Error (%) Trj(ns) 20.800 20.922 0.587 trb(ns) 54.400 54.600 0.368 trr(ns) 75.200 75.522 0.428 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
- 14. Reverse Recovery Characteristic Reference Trj=20.8 (ns) Trb=54.4 (ns) Conditions:Ifwd=lrev=0.2(A),Rl=50 Example Relation between trj and trb All Rights Reserved Copyright (c) Bee Technologies Inc. 2008