Substrate integrated waveguide bandpass filter for short range device application using rectangular open loop resonator

International Journal of Electrical and Computer Engineering (IJECE)
Vol. 11, No. 5, October 2021, pp. 3747~3756
ISSN: 2088-8708, DOI: 10.11591/ijece.v11i5.pp3747-3756  3747
Journal homepage: http://ijece.iaescore.com
Substrate integrated waveguide bandpass filter for short range
device application using rectangular open loop resonator
Dian Widi Astuti, Rizki Ramadhan Putra, Muslim, Mudrik Alaydrus
Department of Electrical Engineering, Universitas Mercu Buana, Indonesia
Article Info ABSTRACT
Article history:
Received Mar 21, 2019
Revised Mar 25, 2021
Accepted Apr 10, 2021
The substrate integrated waveguide (SIW) structure is the candidate for many
application in microwave, terahertz and millimeter wave application. It
because of SIW structure can integrate with any component in one substrate
than others structure. A kind components using SIW structure is a filter
component, especially bandpass filter. This research recommended SIW
bandpass filter using rectangular open loop resonator for giving more
selectivity of filter. It can be implemented for short range device (SRD)
application in frequency region 2.4-2.483 GHz. Two types of SIW bandpass
filter are proposed. First, SIW bandpass filter is proposed using six
rectangular open loop resonators while the second SIW bandpass filter used
eight rectangular open loop resonators. The simulation results for two kinds
of the recommended rectangular open loop resonators have insertion loss (S21
parameter) below 2 dB and return loss (S11 parameter) more than 10 dB.
Fabrication of the recommended two kind filters was validated by Vector
Network Analyzer. The measurement results for six rectangular open loop
resonators have 1.32 dB for S21 parameter at 2.29 GHz while the S11
parameter more than 18 dB at 2.26 GHz – 2.32 GHz. While the measurement
results has good agreement for eight rectangular open loop resonators. It has
S21 below 2.2 dB at 2.41-2.47 GHz and S11 16.27 dB at 2.38 GHz and 11.5
dB at 2.47 GHz.
Keywords:
Bandpass filter
Microstrip filter
Rectangular open loop
resonator
Short range device
SIW filter
This is an open access article under the CC BY-SA license.
Corresponding Author:
Dian Widi Astuti
Department of Electrical Engineering
Universitas Mercu Buana
Meruya Selatan No. 1 Kembangan Kebun Jeruk, Jakarta, Indonesia
Email: dian.widiastuti@mercubuana.ac.id
1. INTRODUCTION
The rapid growth of wireless communication systems leads to a crowded occupation of the
electromagnetic spectrum. In order to avoid possible interferences, the availability of high selective filters is
necessary. Lowpass and bandpass filters with high selectivity have been presented in [1]-[4]. By using
Hilbert curve ring and sierpinski carpet defected ground structure (DGS) in paper [1], the compactness and
selectivity were achieved. Selectivity of filter can also be achieved by coupling between two resonators as
shown in [2]-[4]. Resonator coupling occurs between two parallel resonators closely. The parallel coupled
resonator in [2] are quite long enough then the single resonator is made become rectangular open loop
resonator as shown in [3]. By using material with low loss dielectric and high permittivity can improve S21,
selectivity and compact of filter as shown in [4].
Compact filter can be achieved by using substrate integrated waveguide (SIW) structure because
many components can be implemented in one substrate, known system on substrate (SoS). SIW also offers
good performance such as the low loss, light weight and easy to construct. The first filter in SIW structure

 ISSN: 2088-8708
Int J Elec & Comp Eng, Vol. 11, No. 5, October 2021 : 3747 - 3756
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was inductive post filter by using three-pole Chebyshev filter to give low S21 and better S11 values [5]. For
giving more compact filter, DGS has been successfully implemented in the SIW structure as presented in [6],
[7]. The DGS is scratched at the upper metal cover with three cascaded cells to give more selective.
Complimentary split ring resonator (CSRR) can be categorized as metamaterial structure, has been
analyzed in [8]-[10] to give compact and sharp rejection besides DGS [11]. In [8], several CSRR is used to
form stopband with very sharp rejection in wideband. The internal and external coupling are extracted by Q-
factor in the dominant mode at [9], [10]. Unlike the conventional SIWs, the passbass located below the
dominant frequency.
This research proposed a compact and sharp selectivity bandpass filter by using rectangular open
loop resonator. The rectangular open loop resonator will generate coupling between two resonators and
selectivity will be archived. The filter design is for SRD application at 2.44 GHz as the frequency center.
Overall, this research is presented as follow: research method for SIW and rectangular open loop for six and
eight resonators in section 2. Meanwhile in section 3 gives the simulation and measurement results
discussion. Some parametric studies are offered to give better understanding of the rectangular open loop
resonator characteristic in SIW filter. Finally, this research is closed by conclusion in section 4.
2. RESEARCH METHOD
2.1. Substrate integrated waveguide
SIW was introduced firstly by name of post wall waveguide [12] or laminated waveguide [13] but
right now SIW is more popular [14]. Wu et al. developed SIW so that SIW can be implemented to many
kinds of components even active or passive components. SIW can be implemented by using SIW structure
such as filter [5], [15], amplifier [16], antenna [17]-[20], filtering antenna [21], circulator [22], coupler [23],
oscillator [24], mixer [25] and many more.
SIW structure is applied as the basic of transmission line consists of the parallel metal holes as
shown in Figure 1. It required the lowest frequency that can transmit to the SIW structure. The lowest
frequency can be named as the dominant frequency, fmnl. The dominant frequency is obtained by the equation
for the rectangular waveguide as (1),
2
2
2
2





















e
l
b
n
a
m
c
f
r
r
mnl






(1)
where m, n and l are the integer number of differences in the standing wave pattern for the rectangular
coordinate respectively [26]. Parameter a, b, e are the equivalent broadness, thickness and extent of the
cavity. Because of the ratio between broadness and thickness substrate are too high, only TEm0l modes can
propagate in the SIW structure, n=0. The lowest mode for transversal electrical (TE) mode was TE101. It
should be implemented for miniaturization design. The configuration for metallized holes have to be satisfied
by 2p/d<5 and d/0≤0.1 where the metallized hole diameter d the center distance between two adjacent
metallized holes p and 0 is the wavelength at the free to air condition [27]. The SIW transmission line is
feed by tapper with the minimum length is quarter wavelength of the quasi-TE mode.
d
f
h
p
g
o w
(a) (b)
Figure 1. Dominant frequency design; (a) The upper layer, (b) The bottom layer,
the black color is the copper layer
Rogers RO3210 with substrate thickness 0.64 mm, tangent loss (δ) 0.003, the relative permittivity
constant (εr) 10.2 is used in this design in order to get more compact bandpass filter. Figure 1 shows the
dominant frequency design. Unlike usual, in this design used dominant frequency higher than the bandpass
frequency. The dominant frequency simulation is achieved by using Ansys HFSS.

Int J Elec & Comp Eng ISSN: 2088-8708 
Substrate integrated waveguide bandpass filter for short range device application using... (Dian Widi Astuti)
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2.2. Six rectangular open loop resonators
The designed filter consists several rectangular open loop resonators on the upper layer to disturb
electric current. The six rectangular open loop resonators are scratched out on the upper layer. The single
rectangular open loop resonator is design base on [4] and duplicate six times as displayed in Figure 2. The
length, width, gap of the rectangular open loop resonator are regulated to suitable with resonance frequency.
The parameter variable for six rectangular open loop resonators is tabled in Table 1.
s
m1 s
ws
n1
j
l1
k
Figure 2. Six rectangular open loop resonators design
Table 1. Dimension of six rectangular open loop resonators (in mm)
parameter unit parameter unit
s 4.4 k 20
ws 0.5 l1 57
d 1 m1 0.5
f 3 n1 2
g 2 p 1.5
h 12 w 17
j 0.5 o 1
2.3. Eight Rectangular open loop resonators
Same as before, eight rectangular open loop resonators are constructed by a single rectangular open
loop resonator. Eight rectangular open loop resonators gives narrow bandwidth, sharp selectivity and better
insertion values even though the second resonance frequency will change closer. Eight rectangular open loop
resonator design is displayed in Figure 3. The variable parameter n1 in eight rectangular open loop resonators
is 2.5 mm while the others variable parameters are same with Table 1.
Figure 3. Eight rectangular open loop resonators design
3. RESULTS AND DISCUSSION
3.1. Simulation
The simulation variables of j dan n1 are shown in Figure 4. Some parametric studies was given to
give more understanding about coupling between two or more rectangular open loop resonator. Figure 4(a)
shown the simulation of variable j, separation between four rectangular open loop resonators up and down. It
shown if the j increases from 0.3 mm to 0.7 mm than the resonance frequency changes to the higher
frequency and the S11 will be low. Separation between rectangular open loop left and right was notified as

 ISSN: 2088-8708
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variable n1. If n1 variable increases from 1 mm to 3 mm than narrow bandwidth will be achieved and S11 will
be low as shown in Figure 4(b). Figure 4(c) shows if the distance between n1 and j are small than bandwidth
will wider than distance between n1 and j are far away. Table 2 to Table 4 summarize parametric studies of
variables n1 and j for six rectangular open loop resonators.
(a)
(b)
(c)
Figure 4. S-parameter simulation for six rectangular open loop resonator as variable; (a) j, (b) n1, (c) n1 and j
Table 2. Simulation results of variable j for six
rectangular open loop resonator (in mm)
j S21 (dB) S11 (dB)
Center
Frequency
(GHz)
Bandwidth
(MHz)
0.3 1.68 32.2 2.36 100
0.5 1.07 29.78 2.43 140
0.7 1.44 27.65 2.48 160
Table 3. Simulation results of variable j for six
n1 S21 (dB) S11 (dB)
Center
Frequency
(GHz)
Bandwidth
(MHz)
1 1.44 20.71 2.42 190
2 1.07 29.78 2.43 140
3 1.58 11.39 2.44 120
Table 4. Simulation results of variable j and n1 for six rectangular open loop resonator (in mm)
j n1 S21 (dB) S11 (dB) Center Frequency (GHz) Bandwidth (MHz)
0.3 1 1.36 19.28 2.35 150
0.7 3 1.95 13.07 2.47 70
Figure 5 gives the simulation results for variables j and n1 for eight rectangular open loop resonator.
If variable j increases from 0.3 mm to 0.7 mm the bandwidth will be wide, the S11 are quite same and still
below at 10 dB as presented in Figure 5(a). While in Figure 5(b) if variable n1 decreases from 3 mm to 2 mm

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the passband will change to the lower frequency and the S11 gets low until 8.52 dB. Figure 5(c) shows if the
distance between n1 and j are far away than the narrow bandwidth will be achieve and the passband will
change to the higher frequency. It is vice versa for the condition if the distance between variables n1 and j are
small. The detail summary of parametric studies are shown in Table 5 to Table 7.
(a) (b)
(c)
Figure 5. S-parameter simulation for eight rectangular open loop resonator as variable; (a) j, (b) n1,
(c) n1 and j
Table 5. Simulation results of variable j for eight
j S21 (dB) S11 (dB)
Center
Frequency
(GHz)
Bandwidth
(MHz)
0.3 1.71 23.79 2.45 100
0.5 1.37 22.81 2.46 110
0.7 1.41 24.19 2.48 110
Table 6. Simulation results of variable n1 for eight
n1 S21 (dB) S11 (dB)
Center
Frequency
(GHz)
Bandwidth
(MHz)
2 1.55 19.4 2.43 120
2.5 1.37 22.81 2.46 110
3 1.58 27.43 2.49 90
Table 7. Simulation results of variable c and n for eight rectangular open loop resonator (in mm)
j n1 S21 (dB) S11 (dB) Center Frequency (GHz) Bandwidth (MHz)
0.3 2 1.58 19.19 2.41 100
0.7 3 1.4 31.12 2.5 90

 ISSN: 2088-8708
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Comparison between six and eight rectangular open loop resonator is given in Figure 6. It can be
analyzed that eight rectangular open loop resonators give narrow bandwidth than six rectangular open loop
resonators. The S21 at six rectangular open loop resonator is better than the S21 at eight rectangular open loop
resonator. Likewise, the S11 value will be higher if the S21 value is small.
(a) (b)
Figure 6. S-parameter comparison six and eight rectangular open loop resonator; (a) Wideband,
(b) Narrow band
3.2. Measurement
Figure 7 shows the fabrication of dominant frequency, six and eight rectangular open loop resonator
in SIW structure. Figure 7(a) is the dominant frequency fabrication while Figure 7(b) and 7(c) are six and
eight rectangular open loop resonators. The resonators was scratched at the upper layer. The ground layer is
same for three fabrications as shown in Figure 7(d).
(a) (b)
(c) (d)
Figure 7. Fabrication photograph of, (a) The upper layer dominant frequency, (b) The upper layer six
rectangular open loop resonators, (c) The upper layer eight rectangular open loop resonators, (d) The ground
layer for dominant frequency, six rectangular open loop resonators and eight rectangular open loop
resonators
As mentioned before that the dominant frequency was higher than bandpass frequency. The
measurement of dominant frequency fabrication as shows in Figure 8. It prove the cut frequency at around
3 GHz.

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Figure 8. S-parameter simulation and measurement results from dominant frequency
For six rectangular open loop resonators, simulation results are presented in Figure 9(a) for narrow
band and Figure 9(b) for wideband. The simulation for S parameter gives the S21 values 1.11 dB at 2.4 GHz
and 1.19 dB at 2.483 GHz. The 83 MHz bandwidth range is achieved by simulation result which it can be
applied for SRD application with 2.44 GHz frequency center. While the S11 values show more than 20 dB for
frequency region at 2.38 GHz until 2.48 GHz. By using VNA, the fabrication filter is validated. The
measurement displays the frequency changing through a low frequency where the frequency center become
2.3 GHz. It means that the difference is around 140 MHz. The discrepancy occurs because of inaccuracy
fabrication process in mm-scales and ports connection. The S21 value becomes increase to a 1.32 dB at
2.29 GHz. The S11 values are still over than 18 dB at frequency region 2.26-2.32 GHz. The discrepancy
usually occurs in the measurement results but overall the simulation results and measurement results give an
acceptable values. In Figure 9(b) shows a wide bandstop until 5 GHz.
(a) (b)
Figure 9. Simulation and measurement results for six rectangular open loop resonator as, (a) Narrow band,
(b) Wideband
Relationship between simulation and measurement results is compared for eight rectangular open
loop resonators as shown in Figure 10. Figure 10(a) is for the narrow band while Figure 10(b) is for
wideband. The simulation results have S21 1.88 dB at 2.4 GHz and 1.34 dB at 2.48 GHz. The S11 values are
22.81 dB at 2.42 GHz and 20.72 dB at 2.5 GHz. Overall, the S-parameter simulation for eight rectangular
open loop resonator are acceptable because of the S11 values are still below 10 dB for 2.4 GHz until
2.483 GHz. While the measurement results show S21 1.65 dB at 2.41 GHz and 2.15 dB at 2.47 GHz. The S11
are 16.27 dB at 2.38 GHz and 11.5 dB at 2.47 GHz. The differentiation among simulation and measurement
results appear because of soldering connector or fabrication process. Generally, the validation for S

 ISSN: 2088-8708
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parameter still have acceptable values because S21 still below than 3 dB even S11 still more than 7 dB. The
second bandpass are come up to the first bandpass.
(a) (b)
Figure 10. Simulation and measurement results for eight rectangular open loop resonators as;
(a) Narrow band, (b) Wideband
4. CONCLUSION
A substrate integrated waveguide (SIW) bandpass filter using complementary split rectangular
resonator has been designed, fabricated and validated for short range device (SRD) application at 2.44 GHz
frequency center. The simulation and measurement results give good values for S parameter event though the
discrepancy occurs. Mostly, it always happens due to soldering connector or fabrication process.
ACKNOWLEDGEMENTS
The authors are very grateful to Indonesia Ministry of Research, Technology and Higher Education,
RISTEKDIKTI for supporting and funding this research in PDUPT scheme 2018-2019 under contract
number 02-5/006/HD-SPK/III/2019.
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BIOGRAPHIES OF AUTHORS
Dian Widi Astuti was born in Jakarta, Indonesia. She received the B. Eng and M. Eng from
Universitas Mercu Buana, Jakarta-Indonesia. Since 2012, she has been a lecturer and joint
electromagnetic and telecommunication Laboratory in the Universitas Mercu Buana, Jakarta.
Her current research interest include microwave, millimeter-wave passive components design.
She is currently working toward Ph.D degree at Universitas Indonesia, Indonesia.
Rizki Ramadhan Putra earned his Bachelor’s degree from Department of Electrical
Engineering, Mercubuana University Jakarta in 2018. He earned his Bachelor’s degree after
designing Band Pass Filter with Substrate Integrated Waveguide and Complementary Split Ring
Resonator method. During that time, he also working on PT Indosat as Field and Network
Engineer which has responsibility of Operating and Maintaining Indosat’s Jabotabek Backbone.

 ISSN: 2088-8708
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Muslim received the B.Eng and M. Eng from Universitas Mercu Buana, Jakarta-Indonesia. He
was practitioner engineering in Broadcasting television from 1994 until now. He joint as a
Lecture in Universitas Mercu Buana from 2015. He current research interest include trouble
shooting and microwave passive components design.
Mudrik Alaydrus received the Dipl.-Ing. and Dr.-Ing. degrees in Electrical Engineering from
Universitaet Hannover and Universitaet Wuppertal, in 1997 and 2001, respectively. Since 2003,
he has worked at Universitas Mercu Buana, Jakarta. He has authored more than 100 publications
including three text books: Electromagnetics, Transmission Lines and Antennas. He holds a
granted patent and two patent pendings. In 2006 he founded the laboratory Advanced
Telecommunication and Applied Electromagnetics in Department of Electrical Engineering at
Universitas Mercu Buana. Dr. Alaydrus is Senior Member of IEEE and member of Verein der
Deutschen Elektroingenieure (VDE). His current researchs include microwave and millimeter
wave components, wireless power transfers, wireless sensor networks, interaction between
electromagnetics and materials, and mathematical modeling in signal processing. He is reviewer
of several reputable journals including IEEE Trans. On Antennas and Propagation.

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