IRJET- Design a Substrate Integrated Waveguide IRIS Band Pass Filter in CST Software

International Research Journal of Engineering and Technology (IRJET) e-ISSN: 2395-0056
Volume: 05 Issue: 08 | Aug 2018 www.irjet.net p-ISSN: 2395-0072
© 2018, IRJET | Impact Factor value: 7.211 | ISO 9001:2008 Certified Journal | Page 324
Design a Substrate Integrated Waveguide IRIS Band Pass Filter in CST
Software
SHIKHA GARG1, NITESH YADAV2
Dept.of electronics and communication engineering, GEC ,AJMER (Rajasthan) – India
-----------------------------------------------------------------------***------------------------------------------------------------------------
Abstract:-A rectangular waveguide is known as a property
handling low loss and low energy waveguide. However, since
the structure is large, it is difficult to manufacture at low
cost with a flat structure.So we invent a new technique
which is called Substrate Integrated Waveguide (SIW) is
introducing. In line with these limitations in the design of
microwave components, a rectangular waveguide was
incorporated into the microstrip substrate. SIW is one of the
most common and complicated techniques so far because it
is easy to incorporate a conventional rectangular waveguide
into a conventional printed circuit board (PCB). The SIW
rectangular waveguide consists of a dielectric substrate by
placing two separate metal walls designed with metal bars.
The ground level and the substrate layer are also metal, and
the traditional metal rectangle leaves most of the waveguide
advantages.Many types of filters are using to design SIW
structure. In this paper, we propose an improve X and K
band pass IRIS filter designed in CST and simulated for
satellite communication environment.
Key word: SIW, IRIS, Band pass filter, CST, K band
1. INTRODUCTION
Substrate Integrated waveguide (SIW) has a waveguide
structure have two parallel metal panels are connected by
two layers of integrated metal conductors. The rows of
metal tracks form side walls. This relatively new
architecture features microstrip and waveguide
properties. Its manufacturing process is similar to other
printing structures. A typical geometric shape is shown in
Fig. 1 (ie, a passage through a lateral hole), the diameter of
the hole in d and the length of the step (p) are the most
important in the design of the SIW. Next section, It should
be noted that the dominant pattern is TE10 as a
rectangular waveguide. Substrate Integrated waveguide
(SIW) designed with SWI is an integrated waveguide
structure, and two parallel metal plates are connected by
two rows of buried metal buffer paths. The rows of metal
tracks form side walls. This relatively new architecture
features microstrip and waveguide properties. Its
manufacturing process is similar to other printing
structures. The SIW is shown in Figure 1, where the width
(i.e. the lateral as pacing), the diameter of the hole through
and the length of the step are more important in the SIW
design. The relationship between fc frequency and size a
and b of AFWG and DFWG is the starting point of SIW. For
AFWG (see Figure 1), the pattern cut frequency is given by
the following formula
Fig 1. Basic Design of SIW
fC = √( ) ( ) ………………(1)
Where c is the speed of light in free space, m and n are
state numbers, a is the higher and b is the lesser dimension
of this waveguide. Equation 1 is simplified because it
needs to operate in dominant TE10 mode
fc= for AFWG
2. IRIS BANDPASS FILTER
The SIW structure is achieved by two metal methods that
are periodically incorporated in an insulating substrate.
Because of these metal layers surrounding the SIW, the
pattern spreads only to this structure. The most important
landmark is the distance between the adjacent road and its
diameter. For these unique values of p, λ ,c and λ or c is the
structure of the integrated wave substrate that has the
equivalent behavior as a rectangular waveguide, and its
radiation loss is almost negligible. Breakouts are generally
applied to the guide structure of the router and waveguide
filters can be applied. However, due to manufacturing
process limitations, the only way to manufacture SIW

interactive components is to create fully empty cavities
and padded metal sheets, or to form models of upper and
lower metal planes. Therefore, capacitive blocking can not
be generated with a single layer SIW structure. Figure 1 - a
shows one of the interoperable breaks in the SIW
structure. This filter is called an iris filter. Iris illumination
in the symmetric display sensor window (= 1, 2, ...) and
longitudinal resonance (= 1, 2, ..., + 1) is integrated during
these interruptions. The relationship between resonances
is controlled by the viewing distance of the iris cutting.
Fig 2. (a) Illumination of SIW structure, (b) Equivalent
circuit of iris diaphragm in SIW structure, (c) Iris
deflection equation circuit using SIW structure
According to the number (1-c), these tariff functions
interconnecting SIWs function as resistors. Thus, the
process of designing SIW filters using Iris interrupts
reduces the detection of the characteristic impedance of
inverters and the width of the display between
symmetrical metal walls. The measured impedance
impedance characteristics of a band pass filter with a
Chebyshev frequency response is
∆
= √
І i=1to n-1=
√
=√
Àgo= ………………………….(2)
In (2), gi’s is the value of the low pass filter component. By
Chebyshev's reaction, ∆ is the relative bandwidth. The
waveform wavelength is the measured low-pass
frequency, and the characteristic impedance of the
transmission line and is the wavelength that is directed to
the upper and lower ways of the frequency band filter.
Once the characteristic impedance value of the resistance
impedance is determined, the physical length of the lumen
resonance can be calculated as described below.
=
( )
t=∏- [tan-1( )+tan-1( )]Li= ……..(3)
Fig 2(b) shows the equivalent T circuit of this interrupt.
Their component values are dependent on frequency,
magnitude, and the position of the iris. The parameters of
the T circuit are derived from the following equation .
=-tan-1(2XP+Xx)-tan-1(Xx)
jXx=
jXp=( )
………………………(3)
After determining the physical parameters of the iris wave
filter by the equations (2) - (3), the equivalent SIW
parameter is calculated as .

Lsjw=L+
asjw=ae+ ……………………………(4)
3. Proposed IRIS Bandpass Filter
SIW bandpass filter iris design (one X band, the other in
the K band), which εr = 9.8, the loss tangent of 0.002 and
have a thickness of 0.254. Steep dielectric constant
material is used to obtain small size filters. Figure 3
illustrates the K-band filter. Once the waveguide has been
inflated, filter waveguide iris parameters (using the design
equations) are determined. dimensions of the waveguide
SIW to scale with the size, and the scale factor used to
modify the width and length of the window between the
iris of the iris, the iris can be performed in such a way that
the SIW implementation filter. Then, the final value of the
key parameter (for example, window width iris (indicated
by Fig. 3 along the length of the longitudinal direction
between the iris SIW Optimized for optimal performance
with CST MWS. Figures 3 show the K band filter CST MWS
model. Li and filter parameters and wi game and key
parameters wt and Lg.
The final parameters of the manufactured filter are listed
in Table 1, for the K band filters. In addition to these
parameters, the width of line 50 is 22 thousandths of an
inch, each having of metal of diameter 16 thousand and the
separation between the 28 thousandths of an inch through
holes. It must be taken into account that these parameters
are measured from the center of the through hole. Both
filters have 5 sections of cavity (between 6 sections of iris),
so they are 5th order filters. Finally, the southwestern
microwave has a 2.92 mm final emitter connector.
Figure (3). CST MWS model for the SIW iris filter at K
band
Table (1). Dimension of the K-band iris filter
Parameter Length Parameter Length
MetalThick 0.035 width 5
diaThick 0.254 y Pitch*30
dia 0.3 x Width+6
Pitch 0.6
p 1.5
The measurement and simulated s11 graph of the designed
filter is obtained by CST as illustrated in Figure (4).
Figure 4. S11 graph of SIW band pass filter
4. Discussion and Conclusion
Purposed Waveguide iris bandpass Filter structure is
designed with SIW technology and designed at K-bands.
Measurement and simulation s11 and s12 results are draw
in CST Software. Then, using IRIS based bandpass Filters
that are available in the literature are investigated and
similar results with the ones reported in the literature are
obtained. Having investigated these filter structures in the
literature, a novel SIW bandpass filter topology is
proposed by replacing the resonators in reverse geometry
that has named interdigital structure of the configuration.
Simulation and fabrication results agree well with each
other and it shows that this filter can be successfully used
in microwave applications for satellite communication.

REFERENCES
[1] C. Shi, H. Yousef, and H. Kratz, "- 79 GHz Slot Antennas
Based on Substrate Integrated Waveguides (SIW) in a
Flexible Printed CircuitBoard," IEEE Transactions on
Antennas andPropagation, vol. 57, pp. 71, 2009.
[2] D. Deslandes and K. Wu. "Integrated Microstrip and
Rectangular Waveguide in Planar Form", IEEE Microwave
and Wireless Component Lett., Vol. II, pp. 68-70. Feb. 2001.
[3] F. Xu and K. Wu, “Guided-Wave and Leakage
Characteristics of Substrate Integrated Waveguide,” IEEE
Trans. on Microwave Theory and Techniques, Vol. MTT-53,
No. 1, pp. 66-73, Jan. 2005.
[4] M. Bozzi, A. Georgiadis, K. Wu, “Review of substrate-
integrated waveguide circuits and antennas”, Special Issue
on RF/Microwave Communication Subsystems for
Emerging Wireless Technologies”, doi: 10.1049/iet-
map.2010.0463.
[5] M. Henry, C. E. Free, B. S. Izqueirdo, J. Batchelor, P.
Young, “Millimeter wave Substrate Integrated Waveguide
Antennas: Design & Fabrication Analysis”, IEEE
TRANSACTIONS ON ADVANCED PACKAGING, VOL. 32, NO.
1, FEBRUARY 2009.

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