A Low Phase-Noise VCO Using an Electronically Tunable Substrate Integrated Waveguide Resonator

3452 IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, VOL. 58, NO. 12, DECEMBER 2010
A Low Phase-Noise VCO Using an Electronically
Tunable Substrate Integrated Waveguide Resonator
Fan Fan He, Ke Wu, Fellow, IEEE, Wei Hong, Senior Member, IEEE,
Liang Han, Student Member, IEEE, and Xiaoping Chen
Abstract—In this paper, an -band low phase-noise voltage-
controlled oscillator (VCO) using a novel electronically tunable
substrate integrated waveguide (SIW) resonator is proposed and
developed for RF/microwave applications on the basis of the
substrate integrated circuits concept. In this case, the resonant
frequency of the SIW cavity resonator is tuned by different
dc-biasing voltages applied over a varactor coupled to the cavity.
Measured results show that the tuning range of the resonator is
about 630 MHz with an unloaded of 138. Subsequently, a
novel reflection-type low phase noise VCO is developed by taking
advantage of the proposed tunable resonator. Measured results
demonstrate a frequency tuning range of 460 MHz and a phase
noise of 88 dBc/Hz at a 100-kHz offset over all oscillation frequen-
cies. The VCO is also able to deliver an output power from 6.5 to
10 dBm. This type of VCO is very suitable for low-cost microwave
and millimeter-wave applications.
Index Terms—Phase noise, substrate integrated waveguide
(SIW), tunable resonator, varactor, voltage-controlled oscillator
(VCO).
I. INTRODUCTION
Recently, substrate integrated waveguide (SIW) structures
have attracted a lot of attention. The SIW can be synthe-
sized in a substrate by metallic via arrays utilizing a standard
printed circuit board (PCB) or low-temperature co-fired ceramic
(LTCC) process. The microwave and millimeter-wave compo-
nents based on the SIW, which can be easily integrated with
other planar circuits, have the advantages of high- factor, low
insertion loss, and high power capability. Therefore, a number
of applications based on the SIW technique have been reported
Manuscript received February 15, 2010; revised July 27, 2010; accepted Au-
gust 02, 2010. Date of publication October 21, 2010; date of current version
December 10, 2010. This work was supported in part by the Natural Sciences
and Engineering Research Council of Canada (NSERC), by the National 973
Project of China under Grant 2010CB327400, and by the National Natural Sci-
ence Foundation of China (NSFC) under Grant 60921063. This paper is an
expanded paper from the Asia–Pacific Microwave Conference, Singapore, De-
cember 7–10, 2009.
F. F. He is with the Poly-Grames Research Center, Department of Electrical
Engineering, École Polytechnique de Montréal, Montréal, QC, Canada H3C
3A7, and also with the State Key Laboratory of Millimeter Waves, College of
Information Science and Engineering, Southeast University, Nanjing 210096,
China (e-mail: fanfan.he@polymtl.ca).
K. Wu, L. Han, and X. Chen are with the Poly-Grames Research Center, De-
partment of Electrical Engineering, École Polytechnique de Montréal, Montréal,
QC, Canada H3C 3A7 (e-mail: ke.wu@ieee.org).
W. Hong is with the State Key Laboratory of Millimeter Waves, College of
Information Science and Engineering, Southeast University, Nanjing 210096,
China (e-mail: weihong@seu.edu.cn).
Color versions of one or more of the figures in this paper are available online
at http://ieeexplore.ieee.org.
Digital Object Identifier 10.1109/TMTT.2010.2081550
in [1]–[10], especially a high- resonator that was designed
using the SIW technique [11], [12].
Based on the SIW resonator, several microwave and mil-
limeter-wave oscillators with fixed oscillation frequencies have
been developed. In [13], a feedback-type oscillator using a
SIW cavity resonator as the frequency selector, which has a
phase noise of 73 dBc/Hz at a 100-kHz offset, was developed.
A -band Gunn diode oscillator with a phase noise lower
than 91.23 dBc/Hz at a 100-kHz offset was also reported in
[14]. Moreover, SIW cavity resonator oscillators have been
developed on the analysis of a relationship between the factor
and phase noise [15]. However, most radar and communication
applications need a voltage-controlled oscillator (VCO) as
the local oscillator (LO) source. Thus far, VCOs based on the
SIW resonator have not been reported because it is difficult
to design tunable SIW resonators. Although one tunable SIW
resonator was developed in [16], it cannot be tuned continu-
ously. Recently, we have proposed a continuously electrically
tunable SIW reflective cavity resonator that can be used to
design tunable devices such as VCOs and tunable filters [17].
This resonator makes use of a typical SIW cavity resonator
that is combined with a surface mounted varactor to realize
the desired tuning function. Compared to the coaxial package
components combined with the SIW [16], the fabrication
complexity decreases greatly in this case.
In this paper, an -band low phase-noise VCO is designed,
fabricated, and measured with an electronically tunable SIW
resonator that is optimized to achieve a wider tuning range than
[17]. Described in Section II are the design and analysis of the
proposed tunable SIW resonator with its simulated and mea-
sured results. In Section III, a reflective VCO based on the pro-
posed resonator is designed and measured. The oscillation fre-
quency is tuned by applying the reverse dc voltage applied over
the varactor. All the structures in this paper are simulated by
means of the simulation tools CST 2010 and ADS 2009. Cir-
cuits designed are fabricated on a Duroid 6002 substrate with a
dielectric constant of 2.94 and a thickness of 0.508 mm.
II. DESIGN AND ANALYSIS OF THE SIW TUNABLE RESONATOR
Fig. 1 illustrates the top view of the physical configuration
of the electrically tunable SIW reflective cavity resonator. The
white and yellow (in online version) areas stand for the substrate
and metal covers of the substrate, respectively. The separate cir-
cular metal cover is used to provide a dc bias for the varactor.
In Section II-A, we will explain how to mount the varactor and
set the dc-bias line in detail. As for circuit design, the cavity
and its external coupling to the cavity using microstrip line are
0018-9480/$26.00 © 2010 IEEE

HE et al.: LOW PHASE-NOISE VCO USING ELECTRONICALLY TUNABLE SIW RESONATOR 3453
Fig. 1. Top view of physical configuration of the electrically tunable SIW re-
flective cavity resonator. W = 13:6 mm, L = 13:8 mm, W = 2:6 mm,
W = 0:2mm, L = 3:0mm, W = 0:2mm, L = 1:8mm, R = 1:2mm,
L = 0:4 mm, L = 0:6 mm, W = 0:3mm, and W = 1 mm.
firstly developed, and then the cavity coupling to the varactor is
designed.
A. Design of the SIW Cavity and Its External Coupling to the
Microstrip Line
According to [13], the propagation properties of the
-like mode of the SIW are very similar to the
mode of a rectangular waveguide. As a result, an SIW cavity
can be designed by using the following equation:
(m/W) (1)
As shown in Fig. 1, the metallic holes are replaced by metallic
slots for brevity, where W is the width of these slots. Resonant
frequency of the mode is 9.01 GHz for mm and
mm. The unloaded quality factor of the cavity can be
approximated by the following equation:
(2)
where quantities and are given by Pozar [19] for a rectan-
gular waveguide cavity. An estimate of is obtained by using
effective dimensions of the SIW cavity in the above formulas.
In this case, we can use (2) to calculate the unloaded factor
of the mode SIW cavity to be 374.
The energy is coupled to the cavity by means of effective cur-
rent probes with the microstrip line. The current probes are built
by moving (or removing) metallic slot on one side of the cavity
to make a place for an insert, as illustrated in Fig. 1. The probe
is merely a prolongation of the microstrip line in the cavity that
is then short circuited. As the probes are comparable in size to
the cavity, they can change the frequency of resonance. A 3-D
electromagnetic simulator is necessary to accurately design the
cavity. The strength of the coupling of a current probe mainly
depends on depth and width and of the probe. It
is also important to note that for a microstrip line coupling with
the cavity, the probe is merely a prolongation of the microstrip
line in the cavity that is then short circuited. Fig. 2 shows the
Fig. 2. Electric field distribution of the electrically tunable SIW reflective
cavity resonator.
electric field distribution of the tunable SIW reflective cavity
resonators. Fig. 3 shows the simulated and measured . We
can see that the simulated and measured resonant frequencies
are slightly different because of the deviation in dielectric con-
stant and the fabrication error. The measured resonant frequency
is 8.955 GHz. In [19], a one-port reflection technique was pro-
posed to extract the unloaded and loaded from the mea-
sured return loss. At the resonant frequency, the coupling coef-
ficient can be obtained from the return loss as
(3)
where is the return loss at the resonant frequency. From
the equation above, we can get that
(4.1)
or
(4.2)
The coupling coefficient in (4.1) and (4.2) correspond to the
under-coupling case and the over-coupling case, respectively.
Through the response circle in the Smith chart (Fig. 3), these two
solutions can easily be distinguished. Usually, a small response
circle excluding the origin of the Smith chart signifies an under-
coupling case; for an over-coupling case, the response circle is
large and encloses the origin. In this design, the over-coupling
is indicated as shown in Fig. 3. According to dB,
has been calculated from (4.2). Fig. 3 also helps us to
calculate the loaded . Therefore, the unloaded
can be calculated by
(5)

Fig. 3. Simulated and measured return loss of the SIW cavity resonator in the
Smith chart.
B. Coupling Varactor to SIW Resonant Cavity
In the SIW structure, the metallic slots connect the top
metallic cover to the bottom metallic cover, and thus the top
metallic cover cannot be used for the dc-bias line or connected
with the dc-bias line of active devices. Therefore, it is necessary
to use a separate metallic cover to connect dc bias for active
devices. In our circuit, the circular metallic cover with a diam-
eter of is used for dc bias, where is the width of the gap
and is the distance from the center of the separated circle
to the center of the cavity. The bias line outside of the cavity
can be connected to the circle metallic cover through a bonding
wire. The circle metallic cover provides dc bias for the varactor,
its cathode is connected on the circle metallic cover, and its
anode is connected on the other top metallic cover (ground).
Fig. 2 shows that the electric field in the cavity can be coupled
to the separated metallic cover through the gap so the varactor
will mainly be excited by a magnetic coupling. If distance
changes from 0.6 to 3 mm, the simulated resonant frequency
will shift downward from 9.17 to 9.03 GHz, but the almost
keeps constant. When is equal to 1.8 mm, the measured
oscillation frequency is 9.113 GHz and is equal to 125.
Measured and simulated results indicate that the ring slot will
increase the resonant frequency and of the SIW cavity.
In the following, we will investigate how the physical length
and the tuning capacitance of varactor affect the tuning
range of the resonant frequency. Fig. 4 shows simulated of
two cases when is swept from 1.1 to 0.3 pF. When is
equal to 3 mm, the resonant frequency sweeps from 8.441 to
8.861 GHz, which results in a tuning range 4.85%; when is
equal to 0.6 mm, the resonant frequency increases from 8.510
to 9.005 GHz and the tuning is about 5.65%. Simulated results
indicate that the increased tuning range will increase as the dis-
tance decreases. The increment of the tuning range also in-
dicates the coupling strength increases between the cavity and
capacitor .
In the design of electrically tunable SIW cavity resonators for
demonstrative purposes, an Aeroflex/Metelics silicon varactor
diode MSV34060-0805-2 is used. Parameters of the varactor
Fig. 4. Simulated S11 versus C when Ld = 3 mm and Ld = 0:6 mm.
TABLE I
PARAMETERS OF THE VARACTOR DIODE
diode are listed in Table I. The tuning capacitance of varactor
can be obtained from 0.3 to 1 pF when the reverse voltage
varies from 30 to 0 V. The distance mm is chosen in
this case.
Fig. 5 displays measured versus dc-bias voltage for the
varactor. The resonant frequency of the tunable reflective res-
onator changes from 9.32 to 9.95 GHz, while the dc-bias voltage
is swept from 0 to 30 V. The tuning range is about 630 MHz
or 6.54% and changes from 55 to 53. Thus, if the varactor
is mounted, the unloaded therefore varies from 132 to 138.
Compared to characteristics of the SIW resonant cavity, the var-
actor has some side effects on the unloaded of this resonator.
In the design, measured results do not agree well with simu-
lated results due to the parasitic effects introduced to circuit after
mounting of varactor and connecting the dc-biasing line. These
parasitic effects are very hard to model since they are not con-
sistent. Thus, we do not propose the equivalent circuit of the
tunable resonator in this paper. Finally, this proposed resonator
provides a way to resolve the problem of tuning of the SIW
cavity. The measured results will be used to simulate the pro-
posed VCO in Section III.
III. DESIGN AND MEASUREMENT OF THE SIW VCO
Fig. 6 describes the physical configuration of the reflective
SIW resonator VCO. This configuration consists of a reflec-

Fig. 5. Measured S11 of the reflective tunable resonator.
Fig. 6. Physical configuration of the reflective SIW VCO.
tive tunable SIW cavity resonator, a transistor with an output
matching network, and a quarter-wavelength interdigital capac-
itor. On the other hand, the VCO design is based on the neg-
ative resistance concept using a common-source series feed-
back element to generate the negative resistance. The active
device used is an Agilent ATF36077 ultra-low-noise pseudo-
morphic high electron-mobility transistor (pHEMT). The feed-
back element generating instability in the VCO is a short stub
with a length . A 65- microstrip line with length used
at the gate side is to establish the required negative conduc-
tance and meet the oscillation conditions and
. The frequency tuning is realized with
a variable capacitance mounting on the SIW tunable cavity.
Since the SIW is inherently grounded, this oscillator has the gate
votage . The dimensions of the VCO are mm,
mm, mm, and mm. Fig. 7 shows a
photograph of the fabricated VCO.
The proposed VCO is measured using a test fixture (Wiltron
3680) and a spectrum analyzer (Agilent E4440A) in terms of
performance parameters including the oscillation frequency,
output power, second harmonic suppression, and phase noise.
Fig. 8 shows the measured oscillation frequency and the output
power versus the reverse bias voltage applied on the varactor,
Fig. 7. Photograph of the fabricated VCO.
Fig. 8. Measured and simulated oscillation frequency and measured output
power versus the reverse bias voltage V .
Fig. 9. Measured phase noise at 100-kHz offset and second harmonic suppres-
sion.
while the applied bias voltages of the pHEMT is V
and mA. The power consumption is about 37 mW.
The tuning range of the oscillation frequency is varying from
9.356 GHz (0 V) with an output power of 6.4 dBm to 9.816 GHz
(13.3 V) with an output power of 9.3 dBm. The center oscilla-
tion frequency is 9.586 GHz (6 V) and the tuning range is 4.8%.
When voltage is more than 13.3 V, the oscillation frequency

Fig. 10. Measured phase noise when V = 26 V.
Fig. 11. Measured spectrum at 9.81 GHz.
suddenly changes to and keeps at 9.98 GHz. This phenomena
indicates that the oscillation conditions are just met at 9.98 GHz
if we apply more than 13.3 V. Measured phase noise of the
VCO is better than 88 dBc/Hz at an offset frequency of 100 kHz
over the entire tuning frequency range, as shown in Fig. 9. The
second harmonic is suppressed more than 33 dB comparing to
the fundamental oscillation frequency. The best suppression of
50 dBc occurs at 9.816 GHz (13.3 V). Therefore, the second
harmonic has less of an effect on the fundamental oscillation.
Fig. 10 plots measured smoothed phase noise when the os-
cillation frequency is 9.4425 GHz (2 V). Fig. 11 shows the
measured spectrum when the oscillation frequency is 9.81 GHz.
For the comparisons among other VCOs, the ﬁgure of merit
(FOM) is used as
(6)
TABLE II
PERFORMANCE OF REPORTED VCOs
where is the oscillation frequency, is the offset, is
the phase noise at offset , and (mW) is the dc power con-
sumption of the VCO. The measured -band VCO has a FOM
of 184 dBc/Hz. Table II lists the performance of state-of-art
VCOs based on integrated circuit (IC) technology.
IV. CONCLUSION
In this paper, an -band VCO based on a novel tunable SIW
cavity resonator has been developed. First, the tunable SIW
cavity resonator has been proposed and analyzed. The proposed
tunable resonator not only realizes a tuning function by ad-
justing the dc-biasing voltage of the varactor, but also retains
the inherent high- characteristics of the SIW cavity reonnator.
A novel planar VCO based on the proposed resonator is then de-
signed and fabricated. Measured results show that our proposed
VCO has many advantages such as low cost, easy planar inte-
gration, and low phase noise. The VCO will be very useful in
cost-effective wireless systems.
ACKNOWLEDGMENT
The authors would like thanks the Rogers Corporation,
Rogers, CT, to provide free samples of the RT/Duroid 6002
substrate, The authors are also grateful to S. Dubé and A. Traian,
both with the Poly-Grames Research Center, Montréal, QC,
Canada, for fabricating experimental prototypes. The authors
wish to thank N. Yang and N. Van Hoang, Poly-Grames Re-
search Center, for their help during this work.
REFERENCES
[1] K. Wu, D. Deslandes, and Y. Cassivi, “The substrate integrated
circuits—A new concept for high-frequency electronics and op-
toeletronics,” in 6th Int. Telecommun. Modern Satellite, Cable,
Broadcast. Service Conf., Oct. 2003, vol. 1, pp. P-III–P-X.
[2] K. Wu, D. Deslandes, and Y. Cassivi, “The substrate integrated
circuits—A new concept for high-frequency electronics and op-
toeletronics,” in 6th Int. Telecommun. Modern Satellite, Cable,
Broadcast. Service Conf., Oct. 2003, vol. 1, pp. P-III–P-X.
[3] D. Deslandes and K. Wu, “Integrated microstrip and rectangular wave-
guide in planar form,” IEEE Microw. Wireless Compon. Lett., vol. 11,
no. 2, pp. 68–70, Feb. 2001.
[4] J. X. Chen, W. Hong, Z. C. Hao, H. Li, and K. Wu, “Development
of a low cost microwave mixer using a broadband substrate integrated
waveguide (SIW) coupler,” IEEE Microw. Wireless Compon. Lett., vol.
16, no. 2, pp. 84–86, Feb. 2006.
[5] A. Piloto, K. Leahy, B. Flanick, and K. A. Zaki, “Waveguide ﬁlters
having a layered dielectric structures,” U.S. Patent 5 382 931, Jan. 17,
1995.

[6] F. F. He, K. Wu, W. Hong, H. J. Hong, H. B. Zhu, and J. X. Chen,
“A planar magic-T using substrate integrated circuits concept,” IEEE
Microw. Wireless Compon. Lett., vol. 18, no. 6, pp. 386–388, Jun. 2008.
[7] G. Q. Luo, W. Hong, Q. H. Lai, K. Wu, and L. L. Sun, “Design and
experimental verification of compact frequency-selective surface with
quasi-elliptic bandpass response,” IEEE Trans. Microw. Theory Tech.,
vol. 55, no. 12, pp. 2481–2487, Dec. 2007.
[8] A. Suntives and R. Abhari, “Design and application of multimode
substrate integrated waveguides in parallel multichannel signaling
systems,” IEEE Trans. Microw. Theory Tech., vol. 57, no. 6, pp.
1563–1571, Jun. 2009.
[9] H. J. Tang, W. Hong, J. X. Chen, G. Q. Luo, and K. Wu, “Development
of millimeter-wave planar diplexers based on complementary charac-
ters of dual-mode substrate integrated waveguide filters with circular
and elliptic cavities,” IEEE Trans. Microw. Theory Tech., vol. 55, no.
4, pp. 776–782, Apr. 2007.
[10] D. S. Eom, J. Byun, and H. Y. Lee, “Multilayer substrate integrated
waveguide four-way out-of-phase power divider,” IEEE Trans. Mi-
crow. Theory Tech., vol. 57, no. 12, pp. 3469–3476, Dec. 2009.
[11] X. P. Chen and K. Wu, “Substrate integrated waveguide cross-coupled
filter withn coupling structure,” IEEE Trans. Microw. Theory Tech., vol.
56, no. 1, pp. 142–149, Jan. 2008.
[12] G. Angiulli, E. Arnieri, D. D. Carlo, and G. Amendola, “Fast non-
linear eigenvalues analysis of arbitrarily shaped substrate integrated
waveguide (SIW) resonators,” IEEE Trans. Magn., vol. 45, no. 3, pp.
1412–1415, Mar. 2008.
[13] Y. Cassivi, L. Perregrini, K. Wu, and G. Conciauro, “Low-cost and
high-Q millimeter-wave resonator using substrate integrated wave-
guide,” in Proc. Eur. Microw. Conf., Milan, Italy, 2002, pp. 1–4.
[14] Y. Cassivi and K. Wu, “Low cost microwave oscillator using substrate
integrated waveguide cavity,” IEEE Microw. Wireless Compon. Lett.,
vol. 13, no. 2, pp. 48–50, Feb. 2003.
[15] C. L. Zhong, J. Xu, Z. Y. Yu, and Y. Zhu, “Ka-band substrate inte-
grated waveguide Gunn oscillator,” IEEE Microw. Wireless Compon.
Lett., vol. 18, no. 7, pp. 461–463, Jul. 2008.
[16] H. W. Chen, H. C. Lu, and T. W. Huang, “The analysis of relation
between Q-factor and phase noise by using substrate integrated wave-
guide cavity oscillators,” in Proc. Asia–Pacific Microw. Conf., Dec.
2005, vol. 4.
[17] J. C. Bohorquez, B. Potelon, C. Person, E. Rius, C. Quendo, G. Tanne,
and E. Fourn, “Reconfigurable planar SIW cavity resonator and filter,”
in IEEE MTT-S Int. Microw. Symp. Dig., Jun. 2006, pp. 947–950.
[18] F. F. He, X. P. Chen, K. Wu, and W. Hong, “Electrically tunable
substrate integrated waveguide reflective cavity resonator,” in Proc.
Asia–Pacific Microw. Conf., Dec. 2009, pp. 119–122.
[19] D. M. Pozar, Microwave Engineering, 2nd ed. New York: Wiley,
1998.
[20] R. S. Kwok and J. F. Liang, “Characterization of high-Q resonators
for microwave-filter applications,” IEEE Trans. Microw. Theory Tech.,
vol. 47, no. 1, pp. 111–114, Jan. 1999.
[21] H. Jacobsson, B. Hansson, H. Berg, and S. Ggevorgian, “Very low
phase-noise fully-integrated coupled VCOs,” in RFIC Symp., Aug.
2002, pp. 467–470.
[22] K. Hu, F. Herzel, and J. C. Scheytt, “An X-band low-power and low-
phase-noise VCO using bond wire inductor,” Adv. Radio Sci., vol. 7,
pp. 243–247, 2009.
[23] S. Ko, H. D. Lee, D.-W. Kang, and S. Hong, “An X-band CMOS
quadrature balanced VCO,” in IEEE MTT-S Int. Microw. Symp. Dig.,
vol. 3, pp. 2003–2006.
[24] H. Jacobsson, B. Hansson, H. Berg, and S. Ggevorgian, “Very low
phase-noise fully-integrated coupled VCOs,” in IEEE RFIC Symp.,
Aug. 2002, pp. 467–470.
[25] I. R. Chamas and S. Raman, “An X-band superharmonic injection-
coupled quadrature VCO (IC-QVCO) with a tunable tail filter for I/Q
phase calibration,” in IEEE RFIC Symp., 2007, pp. 123–126.
Fan Fan He was born in Nanjing, China. He received
the M.S. degree in electrical engineering from Xidian
University, Xi’an, China, in 2005, and is currently
working toward the Ph.D. degree in electrical engi-
neering at both Southeast University, Nanjing, China,
and the École Polytechnique de Montréal, Montréal,
QC, Canada.
He is currently an exchange student with the École
Polytechnique de Montréal. His current research in-
terests include advanced microwave and millimeter-
wave components and systems.
Ke Wu (M’87–SM’92–F’01) is currently a Professor
of electrical engineering and Tier-I Canada Research
Chair in RF and millimeter-wave engineering with
the École Polytechnique de Montréal, Montréal,
QC, Canada. He also holds the first Cheung Kong
endowed chair professorship (visiting) with South-
east University, the first Sir Yue-Kong Pao chair
professorship (visiting) with Ningbo University,
and an honorary professorship with the Nanjing
University of Science and Technology and the City
University of Hong Kong. He has been the Director
of the Poly-Grames Research Center and the Director of the Center for
Radiofrequency Electronics Research of Quebec (Regroupement stratégique
of FRQNT). He has authored or coauthored over 630 referred papers and a
number of books/book chapters. He holds numerous patents. He has served
on the Editorial/Review Boards of many technical journals, transactions, and
letters, as well as scientific encyclopedia as both an editor and guest editor. His
current research interests involve substrate integrated circuits (SICs), antenna
arrays, advanced computer-aided design (CAD) and modeling techniques, and
development of low-cost RF and millimeter-wave transceivers and sensors
for wireless systems and biomedical applications. He is also interested in the
modeling and design of microwave photonic circuits and systems.
Dr. Wu is a member of the Electromagnetics Academy, Sigma Xi, and the
URSI. He is a Fellow of the Canadian Academy of Engineering (CAE) and the
Royal Society of Canada (The Canadian Academy of the Sciences and Humani-
ties). He has held key positions in and has served on various panels and interna-
tional committees including the chair of Technical Program Committees, Inter-
national Steering Committees, and international conferences/symposia. He will
be the general chair of the 2012 IEEE Microwave Theory and Techniques So-
ciety (IEEE MTT-S) International Microwave Symposium (IMS). He is the cur-
rent chair of the joint IEEE Chapters of the IEEE MTT-S/Antennas and Propaga-
tion Society (AP-S)/Lasers and Electro-Optics Society (LEOS), Montréal, QC,
Canada. He was an elected IEEE MTT-S Administrative Committee (AdCom)
member (2006–2009). He is the chair of the IEEE MTT-S Transnational Com-
mittee. He is an IEEE MTT-S Distinguished Microwave Lecturer (2009–2011).
He was the recipient of many awards and prizes including the first IEEE MTT-S
Outstanding Young Engineer Award and the 2004 Fessenden Medal of IEEE
Canada.
Wei Hong (M’92–SM’07) was born in Hebei
Province, China, on October 24, 1962. He received
the B.S. degree from the Zhenzhou Institute of
Technology, Zhenzhou, China, in 1982, and the
M.S. and Ph.D. degrees from Southeast University,
Nanjing, China, in 1985 and 1988, respectively, all
in radio engineering.
Since 1988, he has been with the State Key Lab-
oratory of Millimeter Waves, Southeast University,
where he is currently a Professor and the Associate
Dean of the Department of Radio Engineering.
In 1993 and from 1995 to 1998, he was a short-term Visiting Scholar with
the University of California at Berkeley and the University of California at
Santa Cruz, respectively. He has authored or coauthored over 200 technical
publications. He authored Principle and Application of the Method of Lines (in
Chinese) (Southeast Univ. Press, 1993) and Domain Decomposition Method
for EM Boundary Value Problems (in Chinese) (Sci. Press, 2005). He has been
engaged in numerical methods for electromagnetic problems, millimeter-wave
theory and technology, antennas, electromagnetic scattering, RF technology
for mobile communications, etc.
Prof. Hong is a Senior Member of the China Institute of Electronics (CIE).
He is vice-president of the Microwave Society and Antenna Society, CIE.
He has served as a reviewer for many technical journals, including the IEEE
TRANSACTIONS ON ANTENNAS AND PROPAGATION. He is currently an associate
editor for the IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES.
He was a two-time recipient of the First-Class Science and Technology
Progress Prize issued by the State Education Commission (1992 and 1994),
the Fourth-Class National Natural Science Prize (1991), and the First- and
Third-Class Science and Technology Progress Prize of Jiangsu Province. In
addition, he was also the recipient of the Foundations for China Distinguished
Young Investigators and the Innovation Group awards of the National Science
Foundation of China.

Liang Han (S’07) was born in Nanjing, China. He
received the B.E. (with distinction) and M.S. degrees
from Southeast University, Nanjing, China, in 2004
and 2007, respectively, both in electrical engineering,
and is currently working toward the Ph.D. degree in
electrical engineering at the École Polytechnique de
Montréal, Montréal, QC, Canada.
His current research interests include advanced
computer-aided design (CAD) and modeling tech-
niques and the development of multifunctional RF
transceivers.
Xiao-Ping Chen was born in Hubei Province, China.
He received the Ph.D. degree in electrical engineering
from the Huazhong University of Science and Tech-
nology, Wuhan, China, in 2003.
From 2003 to 2006, he was a Post-Doctoral
Researcher with the State Key Laboratory of Mil-
limeter-waves, Radio Engineering Department,
Southeast University, Nanjing, China, where he was
involved with the design of advanced microwave
and millimeter-wave components and circuits for
communication systems. In May 2006, he was
a Post-Doctoral Research Fellow with the Poly-Grames Research Center,
Department of Electrical Engineering, École Polytechnique de Montréal,
Montréal, QC, Canada, where he is currently a Research Associate. He has
authored or coauthored over 30 referred journals and conference papers and
some proprietary research reports. He has been a member of the Editorial Board
of the IET Journal. He holds several patents. His current research interests are
focused on millimeter-wave components, antennas, and subsystems for radar
sensors.
Dr. Chen has been a reviewer for several IEEE publications. He was the re-
cipient of a 2004 China Postdoctoral Fellowship. He was also the recipient of
the 2005 Open Foundation of the State Key Laboratory of Millimeter-waves,
Southeast University.

A Low Phase-Noise VCO Using an Electronically Tunable Substrate Integrated Waveguide Resonator

More Related Content

What's hot (20)

Viewers also liked (20)

Similar to A Low Phase-Noise VCO Using an Electronically Tunable Substrate Integrated Waveguide Resonator (20)

A Low Phase-Noise VCO Using an Electronically Tunable Substrate Integrated Waveguide Resonator