This document summarizes measurements and simulations of on-chip microstrip transmission lines in silicon-germanium (SiGe) technology up to 110GHz. Two transmission lines of different lengths were fabricated with and without passivation and measured on wafer. Using de-embedding techniques and a two-line method, the characteristic parameters were extracted and matched well with electromagnetic and parametric simulations up to 110GHz, validating the simulation tools. Passivation increased insertion loss due to a lowered characteristic impedance, as predicted by the models. The accurate transmission line models will enable transmission line component design for millimeter-wave applications in SiGe technology.