CSD01060A LTspice Model (Free SPICE Model)
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This document contains a SPICE model for the Cree CSD01060A silicon carbide schottky diode, including: - A SPICE subcircuit model for the diode. - Descriptions of the model parameters like saturation current, emission coefficient, and breakdown voltage. - Simulation results showing the diode's forward and reverse I-V characteristics and junction capacitance, along with comparisons to manufacturer measurements.
CSD01060A LTspice Model (Free SPICE Model)
- 1. All Rights Reserved Copyright (C) Bee Technologies Inc. 2005 COMPONENTS: Silicon Carbide Schottky Diode PART NUMBER: CSD01060A MANUFACTURER: Cree, Inc. REMARK: Professional Model Device Modeling Report Bee Technologies Inc.
- 2. All Rights Reserved Copyright (C) Bee Technologies Inc. 2005 SPICE MODEL *$ * PART NUMBER:CSD01060A * MANUFACTURER: Cree, Inc. * All Rights Reserved Copyright (C) Bee Technologies Inc. 2005 .SUBCKT CSD01060A PIN1 PIN2 CASE X_U1 PIN2 CASE CSD01060_pro R_Rs PIN1 CASE 10u .ENDS .SUBCKT CSD01060_pro A K V_V_I A N00040 0Vdc V_V_Ifwd IN2 K 0Vdc E_E1 VREV 0 VALUE { IF(V(A,K)>0, 0,V(A,K)) } E_E3 I_REV0 0 VALUE { 1.4857e-08*exp(0.0089931*(-V(Vrev))) } E_E4 I_REV 0 VALUE { V(I_rev0)*V(Vr_small)-(-I(V_V_Irev)) } E_E6 IN K VALUE { IF(V(A,K)>0, V(A,K),0) } V_V_Irev VREV1 VREV 0Vdc G_ABMI1 N00040 K VALUE { I(V_V_Ifwd)-V(I_rev) } E_E2 VR_SMALL 0 TABLE { V(Vrev) } + ( (-0.1,1) (0,0) ) D_D3 IN IN2 DCSD01060 R_R1 0 VR_SMALL 10MEG D_D4 VREV1 0 DCSD01060 R_R2 0 I_REV0 10MEG R_R3 0 I_REV 10MEG .MODEL DCSD01060 D + IS=10.000E-21 N=.84507 RS=.37671 IKF=12.100 + CJO=111.88E-12 M=.39264 VJ=.54581 + BV=1000 IBV=20.000E-6 + ISR=0 NR=1 EG=3.0 TT=0 .ENDS *$
- 3. All Rights Reserved Copyright (C) Bee Technologies Inc. 2005 PSpice model parameter Model description IS Saturation Current N Emission Coefficient RS Series Resistance IKF High-injection Knee Current CJO Zero-bias Junction Capacitance M Junction Grading Coefficient VJ Junction Potential ISR Recombination Current Saturation Value BV Reverse Breakdown Voltage(a positive value) IBV Reverse Breakdown Current(a positive value) TT Transit Time EG Energy-band Gap
- 4. All Rights Reserved Copyright (C) Bee Technologies Inc. 2005 V_V1 0V 0.5V 1.0V 1.5V 2.0V 2.5V 3.0V I(R1) 0A 0.2A 0.4A 0.6A 0.8A 1.0A 1.2A 1.4A 1.6A 1.8A 2.0A PIN1 PIN2 CASE R1 0.01m V1 0Vdc 0 Forward Current Characteristic Circuit Simulation Result Evaluation Circuit
- 5. All Rights Reserved Copyright (C) Bee Technologies Inc. 2005 Comparison Graph Circuit Simulation Result Simulation Result IF(A) VF(V) Error (%) Measurement Simulation 0.1 1.000 0.994 -0.604 0.2 1.040 1.047 0.669 0.4 1.140 1.138 -0.176 0.6 1.220 1.222 0.164 0.8 1.300 1.304 0.307 1 1.380 1.384 0.289 1.2 1.460 1.464 0.273 1.6 1.620 1.621 0.062 2 1.780 1.777 -0.169
- 6. All Rights Reserved Copyright (C) Bee Technologies Inc. 2005 V(U1:K) 10V 100V5.0V 400V I(V2)/(600v/1us) 0 5p 10p 15p 20p 25p 30p 35p 40p 45p 50p V2 0Vdc PIN1 PIN2 CASE 0 V1 TD = 0 TF = 10ns PW = 50us PER = 10us V1 = 0 TR = 1us V2 = 600 Junction Capacitance Characteristic Circuit Simulation Result Evaluation Circuit
- 7. All Rights Reserved Copyright (C) Bee Technologies Inc. 2005 Comparison Graph Circuit Simulation Result Simulation Result VR(V) Cj (pF) Error(%) Measurement Simulation 5 45.000 44.965 -0.078 10 35.000 34.983 -0.049 20 27.000 26.917 -0.308 50 19.000 18.910 -0.476 100 14.000 14.423 2.933 200 11.000 10.994 -0.055 500 8.000 7.692 -4.004
- 8. All Rights Reserved Copyright (C) Bee Technologies Inc. 2005 V1 0Vdc R1 0.01m 0 PIN1 PIN2 CASE V_V1 0V 0.2KV 0.4KV 0.6KV 0.8KV 1.0KV I(R1) 0A 10uA 20uA 30uA 40uA 50uA Reverse Characteristic Circuit Simulation Result Evaluation Circuit
- 9. All Rights Reserved Copyright (C) Bee Technologies Inc. 2005 Comparison Graph Circuit Simulation Result Simulation Result IR(uA) VR(V) Error(%) Measurement Simulation 2 573.000 545.307 -5.078 5 660.000 646.951 -2.017 10 725.000 724.015 -0.136 20 800.000 801.201 0.150 50 910.000 903.053 -0.769