High Power Density Multi-Mosfet-Based Series Resonant Inverter for Induction Heating Applications

International Journal of Power Electronics and Drive System (IJPEDS)
Vol. 7, No. 1, March 2016, pp. 107~113
ISSN: 2088-8694  107
Journal homepage: http://iaesjournal.com/online/index.php/IJPEDS
High Power Density Multi-Mosfet-Based Series Resonant
Inverter for Induction Heating Applications
M. Saravanan, A. Ramesh Babu
Satyabhama University, Chennai, India-600119
Article Info ABSTRACT
Article history:
Received Sep 11, 2015
Revised Dec 2, 2015
Accepted Jan 3, 2016
Induction heating application uses uniquely high frequency series resonant
inverter for achieving high conversion efficiency. The proposed work focus
on improving the practical constraints in requiring the cooling arrangements
necessary for switching devices used in resonant inverter due to higher
switching and conduction losses. By introducing high frequency Multi-
MOSFET based series resonant inverter for the application of induction
heating with the following merits such as minimum switching and
conduction losses using low voltage grade of automotive MOSFET’s and
higher conversion efficiency with high frequency operation. By adding series
combination of low voltage rated Multi MOSFET switches, temperature
variation according to the on-state resistance issues can be avoided by
sharing the voltage across the switches depends on the number of switches
connected in the bridge circuit without comprising existing systems
performance parameters such as THD, power factor and output power.
Simulation results also presents to verify that the proposed system achieve
higher converter efficiency.
Keyword:
Induction heating
Power factor correction
Pulse width modulation
Total harmonic distortion
Copyright © 2016 Institute of Advanced Engineering and Science.
All rights reserved.
Corresponding Author:
M. Saravanan,
M.E Power Electronics and Industrial Drives
Satyabhama University,
Chennai, India-600119.
Email: saravanansmiley@gmail.com
1. INTRODUCTION
Induction heating (IH) has mainly used in home and industrial application. Induction heating is the
process of heat generated within the object itself, not via heat conduction by an external heat source and it is
based on the eddy current and skin resistance of coils. In IH applications, higher switching frequency brings
two benefits: reducing the components size, and high power density in the region of the exterior of the
heating objects. The increased frequency results more switching loss which blocks the efforts to raise the
frequency. Because of high switching frequency higher order Harmonics and acoustic noises are generated
and switching edges of switches. It addresses the EMC that is subjected to the un-intentional generation,
propagation and reception of electromagnetic energy in regards to electromagnetic interference. Hence, EMC
filter means combination of passive elements to minimize the noise which is produced by emission and
susceptibility issues [1]-[2]. Next stage, an AC-DC converter provides supply to the inverter block. The
rectifier can be either a non-controlled stage, i.e. diode rectifier, or a controlled one. IH Includes power factor
correction boost converter the main objective is to draw a sinusoidal current, in-phase with the utility voltage
as well as increase the rectifier output [3]-[4]. Semiconductor switches IGBT and MOSFET normally used in
IH. The IGBT device is selectable which gives minimum on-state losses, higher efficiency than the high-
voltage MOSFET devices [5]. Nevertheless, the main drawback of the IGBT’s are large switching times and
limitation of increasing switching frequency (<20 KHz). Whereas the high-voltage MOSFET carries
minimum switching loss and high frequency applications (>200KHZ). According to above, MOSFET device

 ISSN: 2088-8694
IJPEDS Vol. 7, No. 1, March 2016 : 107 – 113
108
appears to be chosen for IH as it uses for High frequency application [6]. Nonetheless, MOSFET devices has
variation in temperature depends upon on-state resistance that leads the voltage stress across the devices.
Proposed series combination of MOSFET devices enables both an on- state losses minimization and
decreased switching times while requiring the same chip area [7]-[10]. Furthermore, the temperature
variation of the on-state resistance is reduced, enabling greater efficiency even if a greater ambient
temperature is reflected (90◦C). The motivation for using combination of series-connected MOSFETs switch
is to minimize the voltage stress on the MOSFETs. Thus recover the breakdown voltage. Hence the switch
heat management and system performance will be enriched. Series resonant converter is used to enhance the
soft switching operation by creating ZVS or ZCS [11]-[13]. IH coil inductance seriesparallel connected to
reduce the switching loss. In proposed circuit, chooses the ZVS as capacitor connected in series with IH coil
inductance to create resonant circuit [14]-[15]. Switched capacitor bank added to improve the output power
of the implemented inverter as it’s done by charging/discharging through the auxiliary switch [6].
2. CIRCUIT DIAGRAM
Figure 1. Proposed Series resonant converter
Figure 1 shows the basic configuration of the proposed high frequency inverter circuit. The inverter
circuit mainly comprises of half bridges with upper section and lower section. Upper switches are MH1,
MH2, MH3 and lower switches are ML1, ML2, ML3, load (L0 and R0). Each MOSFET switch consists of
anti parallel diode and capacitor to obtain the ZVS condition and protection of switches. PFC boost converter
circuit comprises of inductor (Lp), switch (Qp), capacitor (Cp) and diode (Dp), resonant capacitors (Cr1), and
auxiliary switched capacitor network (Cr2). Cr1is engaged in series with IH load and creates resonance with
load L0. Switched capacitor Cr2 is connected in parallel with Q3 and also creates the resonance and zero
voltage soft-switching condition of QS. L0 and R0 are the inductance and resistance of the IH coil and load,
respectively.
The equivalent circuit of modes of operation are described below with considering the inverter
section. Figure 2 shows the switching pulses of the different switches.

IJPEDS ISSN: 2088-8694 
High Power Density Multi-Mosfet-Based Series Resonant Inverter for Induction Heating … (M. Saravanan)
109
Figure 2. PWM signals for MOSFET
There are three operating modes. Each mode is characterized by an equivalent circuit. The real
challenge is how to feed the PWM signal to Multi MOSFET switches that will be done by sinusoidal PWM
techniques. Series stacked switches are triggered with duty cycle. Time delay and phase delay will be given
to avoid the large current available at switching time. For the reason, provides delay in switching sequence
diagram.
a. Mode I
Figure 3. Mode I- Proposed converter
Figure 3 explains the operation of mode1. The switch Q3 conducts for a time Q3 on with delay time
Td. For the period of Q3on + Td, the upper switch MH1, MH2& MH3 conducts for the time interval
THON1, THON2 & THON3 with delay. Henceforth first mode of operation, the current flows from the
source Vdc to the switch MH1-MH2 - MH3, the IH load and the source through the switch Q3.

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b. Mode II
Figure 4. Mode II- Proposed converter
Figure 4 shows the second mode of operation, the switch MH1- MH2- MH3 still conducts for a
delay time Td. It allows the Cr1 to charge with positive polarization in the upper plate and negative
polarization in the lower plate. Assume that the resonant capacitor Cr1 in the IH load discharges through the
auxiliary switch diode D3 and series conducting MOSFET’s upper bridge diode. It can be anticipated that the
ZVS condition can be accomplished for switches MH1, MH2 & MH3 and Q3. The lower side snubber
capacitor C1 arrangement only plays the function for protection of the circuit.
c. Mode III
Figure 5 shows the third mode of operation the lower switch ML1, ML2, ML3 is switched on for the
time interval of TLon1, TLon2 & TLon3. The charged capacitor Cr1 release the stored energy through the
switch ML1, ML2, ML3.Later the capacitor releases completely, the reverse biased current flows through
auxiliary switch diode D3 and ML1, ML2, ML3 switch diodes. Since the turn on of the switch Q3 can be
done at zero voltage, and the losses in the switching at the condition of turn on can be decreased. It completes
one cycle of operation.
Figure 5. Mode III- Proposed converter
The switched capacitor Cr2 acts as a boost capacitor that increases the output voltage and output
power. It will be understand from the simulation results.
3. SIMULATION RESULTS
The results of simulation are posted below and found the MOSFET switch voltage stress get shared
based on the number of switch connected in the half bride series resonant inverter as well as THD value
reduced. The simulation of six switches, four switches and two switch half bridge inverter was carried out
using MATLAB/ Simulink.

111
The six switch half bridge series inverter outputs are shown in Figure 6 and 7. It shows that voltage stress on
single switch is 73V. The FFT analysis indicated as THD value of 4.77%.
Figure 6. PWM, voltage and current of six switch
inverter
Figure 7. FFT analysis of six switch inverter
The four switch half bridge series inverter outputs are shown in Figure 8 and 9. It shows that voltage stress
on single switch is 110V. The FFT analysis indicated as THD value of 4.94%.
Figure 8. PWM, voltage and current of four switch
inverter Figure 9. FFT analysis of four switch inverter
The two switch half bridge series inverter outputs are shown in Figure 10 and 11. It shows that voltage stress
on single switch is 220V. The FFT analysis indicated as THD value of 5.15%.
Figure 10. PWM, voltage and current of two switch
inverter
Figure 11. FFT analysis of four switch inverter

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112
d. Simulation Specification
Table 1. Specification parameter for new topoplogy
DC input voltage, Vdc 220 V
Switching frequency, fs 25 KHZ
Load resistance, R0 7 ohm
Load inductance, L0 146 Micro Henry
Snubber capacitor,C1 0.02 Micro Farad
Resonant capacitor, Cr1 0.33 Micro Farad
Switched capacitor, Cr2 0.3 Micro Farad
e. Performance Parameter
The performance parameters are such as voltage stress, conduction loss, switching loss, THD where
compared with two switch four switch and six switch series resonant inverter. From this comparison result
we conclude that six switch series resonant inverter provides better result compared to other technique.
Table 2. Comparison of series resonant inverter with different topology
PARAMETERS
TWO SWITCH
HALF BRIDGE
INVERTER
FOUR SWITCH
HALF BRIDGE
INVERTER
SIX SWITCH
HALF BRIDGE
INVERTER
Voltage stress on each switch 220 V 110 V 73 V
Switching frequency 25 KHZ 25 KHZ 25 KHZ
No of switches 2 4 6
Output current 17.2 A 16.85 A 16.6 A
Output Voltage 462 V 454 V 445 V
Output Power 1.1 KW 1 .09 KW 1.03 KW
Percentage of THD 5.15% 4.94 % 4.77 %
Conduction loss 15.76 W 15.12 W 14.61 W
Switching loss 3.074 W 1.505 W 0.98 W
4. CONCLUSION
In this paper, a new approach based on the series operation of low-voltage MOSFET has been
successfully proposed. On the top of that, the decreased switching time of MOSFET devices reduces
switching and conduction losses, further increasing the efficiency of conversion and achieved good
performances considering the ZVS operation mode of this resonant converter in a profitable way. Finally, a
comparative evaluation discussion, we understood that existing system Two Switch-MOSFET break down
voltage can be recovered as it to be led to reduce the cooling arrangements and increase the power conversion
efficiency.
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BIOGRAPHIES OF AUTHORS
M. Saravanan completed his B.E Electrical and Electrical Enggineering at Sethu institute of
Techonology, Kariapatti, Virudhunagar-626 115 in the year of 2007-2011. Currently he is doing
his ME-Power Electronics and Industrial Drives in Satyabhama University, Chennai-600119.
A. Ramesh Babu has completed B.E. degree in Electrical & Electronics Engineering from
Manonmaniam Sundaranar University, Tirunelvelli, India in 2001. He got his M.E. in Power
Electronics and Industrial Drives from Sathyabama University Chennai, India in 2008. He is
having more than 14 years of experience (11 years in teaching + 3 years industry). He is a life
member of Indian Society for Technical Education (ISTE). Presently he is pursuing ph.D.
program at Sathyabama University Chennai, India. His Research interest include DC-DC Boost
converter for PV application. Has presented more than 15 research papers in various journals,
National and International Conference. Presently serving as Assistant professor in Sathyabama
University.

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