linearized Boltzmann transport equation in combination with the relaxation time approximation
- 2. linearized Boltzmann transport equation in combination with the relaxation time approximation. Thermoelectric effect the temperature gradient can also induce an electrical current. Boltzmann equation Relaxation time approximation See Mizutani
- 3. This is the linearized Boltzmann transport equation. is included as an extra electric field, since it represents an effective field associated with a change in the chemical potential induced by the temperature gradient ζ ∇ B=0 The number of electrons per unit volume The current density
- 5. The second term indicates that the temperature gradient can also induce an electrical current. This is the thermoelectric effect.
- 6. Let us assume that a metal is in a temperature gradient but is electrically open J = 0 The coefficient Q is called the absolute thermoelectric power or the Seebeck coefficient. an electric field is generated due to a temperature gradient across a specimen
- 7. an electric field is generated due to a temperature gradient across a specimen the voltage generated in the circuit is obtained by integrating the difference in the thermoelectric power of the two metals between the temperatures T1 and T2 at the two junctions.
- 9. LEE represents the electrical conductivity The thermoelectric power can be calculated, once the energy dependence of the conductivity is given.
- 10. ( )dT T Q T T ∫ = 0 σ where s is the electronic entropy density. from Mizutani
- 11. Let us apply the free-electron model to the electrical conductivity formula Note that the thermoelectric power for ordinary metals is fairly small in magnitude, since T/TF is only 0.001–0.005 at room temperature.
- 12. As a typical example, the thermoelectric power for a well-annealed strain-free pure Al metal(99.999%), together with the free-electron behavior , Fermi temperature TF=1.35x105 K the experimental data deviate substantially from the free-electron model and exhibit a minimum at about 70 K. The formation of the minimum has been attributed to the phonon drag effect unique to a crystal metal, where the phonon mean free path is long. from Mizutani
- 13. Peltier Effect Two different metals A and B are joined and connected to a battery, An electrical current density J is fed through the circuit while the circuit is maintained at a uniform temperature. from Mizutani
- 14. an electrical current fed to the circuit generates thermal currents UA=ΠAJ and UB=ΠΒJ in the metals A and B, respectively. from Mizutani
- 15. Phonon drag effect a voltage is generated between the two ends of a sample across which a temperature gradient ∇T exists. •there exists no current flow due to conduction electrons because of an open circuit. •phonons at the high-temperature end are driven to the colder end under a finite temperature gradient. •If the mean free path of the phonon is very long, then the collision of one phonon with other phonons is so scarce that its energy cannot be released to the lattice system. •Instead, phonons can exchange their energy with electrons, since the relaxation time for the phonon–electron interaction is much shorter than that for the phonon–phonon interaction. •the extra local energy carried by a phonon is fed back to the electron system, resulting in a new extra electric field because of J=0. •The generation of the electric field in the electron system due to the flow of the non- equilibrium phonon is called the phonon drag effect •electrons are carried along by the flow of phonons caused by the temperature gradient.
- 16. thermal current density of the phonon at the “hot” end: thermal current density of the phonon at the “cold” end: The difference in thermal energy in the region over 2Λ:
- 17. from Mizutani
- 18. Not valid at the mean free path of the phonon becomes so short that the phonon drag effect is known to become unimportant at such high temperatures. much larger than the measured value!
- 19. D T Θ < The lattice specific heat decreases as T3 below about 20 K the phonon drag effect becomes ineffective again at low temperatures. it is most significant in the intermediate temperature range around 2 . 0 ≈ ΘD T is responsible for the formation of a deep valley
- 20. The valley becomes shallower in alloys because of the shortening of the mean free path of phonons due to the disruption of the periodic lattice. The phonon drag effect is essentially absent in amorphous alloys because of the lack of lattice periodicity. Hence, the temperature dependence of the thermoelectric power in amorphous alloys is attributed to other effects like the inelastic electron–phonon interaction and the energy dependence of the relaxation time.
- 21. Thermoelectric power in metals and semiconductors The interpretation of the measured thermoelectric power is not straightforward even in simple metals e.g. the sign of the thermoelectric power Q in the alkali metals cannot be correctly predicted from the free electron model. positive for Li but is negative for Na and K, though all these metals possess a single-electron Fermi surface. the energy dependence of the relaxation time and inelastic electron–phonon interaction from Mizutani
- 22. •positive thermoelectric power has been observed in monovalent noble metals Contact of the Fermi surface with the {111} zone planes has been suggested to play an important role in its behavior. to synthesize thermoelectric device materials to convert efficiently heat to electricity or vice versa. Ordinary metals possess the Fermi temperature of 104–105K and, thus, the resulting thermoelectric power is, at most, 10–20 µV/K. the heat–current conversion efficiency for a thermoelectric material. Figure of merit
- 23. Intrinsic semiconductors are not important for practical thermo-electric devices since the contributions of electrons and holes are of opposite signs and tend to cancel.
- 24. A large value of Q should be achievable, not in metals, but in heavily doped semiconductors.
- 25. •The thermoelectric power Q is expected to reach a value as high as 500–600 µV/K for a carrier concentration of 1017–1018 cm3. •Bi2Te3 and FeSi2 exhibit a thermoelectric power of a few hundreds µV/K and are considered as the most efficient thermoelectric device materials available at present. Further increase in Q beyond several hundreds µV/K, while suppressing the electrical resistivity and thermal conductivity to be as low as possible, is of urgent need from the viewpoint of practical applications.
- 26. THERMOELECTRIC THERMOMETERS T S E ∇ = If a thermal gradient is generated in a metallic conductor, a voltage between the warm and cold end occurs, termed the Seebeck effect.
- 27. A precise measurement of the thermoelectric voltage using a single piece of conducting material is very difficult because the contacts to a voltmeter through the electrical leads are at different temperatures and therefore can influence the measurement. To avoid these complications, the difference between the thermoelectric voltage of two different conductors is usually measured. Schematic illustration of the classical setup to determine the temperature with a thermoelectric element from Enss
- 28. A disadvantage is, however, that the thermoelectric power vanishes for T → 0. the thermoelectric power of this system is generally too small for thermometry below about 10 K. NIST- data base
- 29. Some special materials, certain metals with magnetic impurities, show thermoelectric powers that are sufficiently large at low temperatures. They can be used for thermometry down to about 1 K. reproduced from Enss
- 30. Thermoelectric Applications •Power Generation • Waste Heat Recovery •Active Cooling/Warming
- 31. • At the hot junction the Fermi level is higher than at the cold junction. Electrons will move from the hot junction to the cold junction in an attempt to equalize the Fermi level, thereby creating an electric field which can be measured in terms of the open circuit voltage V
- 32. Resistivity and Thermopower I+ VR+ VR- ∆T IHeater VTEP + VTEP - Sample Cu block Cu block Heater I- Heater Power, P = I2R, creates ΔT for Thermopower Measurement 4-probe Resistivity Measurement: Current Reversed to Subtract Thermoelectric Contribution ( ) 2 TEP TEP R IR V I R V V + − − − =
- 33. If a heat source is provided, the thermoelectric device may function as a power generator. The heat source will drive electrons in the n-type element toward the cooler region, thus creating a current through the circuit. Holes in the p-type element will then flow in the direction of the current. The current can then be used to power a load, thus converting the thermal energy into electrical energy. http://sellprojects.in/thermal-heating-and-cooling-of-water-using-peltier-effect/
- 34. TE Effects Peltier Effect Difference in εF between Materials A and B Material A Material B Heat Absorbed or Expelled Electric Current
- 35. Peltier Effect П <0 ; Negative Peltier coefficient High energy electrons move from right to left. Thermal current and electric current flow in opposite directions. (electronic) http://www.pathways.cu.edu.eg/ec/text-pdf/part%20c-17.pdf
- 36. Peltier Cooling П >0 ; Positive Peltier coefficient High energy holes move from left to right. Thermal current and electric current flow in same direction. q=П*j, where q is thermal current density and j is electrical current density. П= S*T (Volts) S ~ 2.5 kB/e for typical TE materials T is the Absolute Temperature http://www.pathways.cu.edu.eg/ec/text-pdf/part%20c-17.pdf
- 37. the evolution or absorption of heat when electric current passes through a circuit composed of a single material that has a temperature difference along its length. This transfer of heat is superimposed on the common production of heat associated with the electrical resistance to currents in conductors. If a copper wire carrying a steady electric current is subjected to external heating at a short section while the rest remains cooler, heat is absorbed from the copper as the conventional current approaches the hot point, and heat is transferred to the copper just beyond the hot point. This effect was discovered (1854) by the British physicist William Thomson (Lord Kelvin). Thomson effect
- 41. Charge flows through the n-type element, crosses a metallic interconnect, and passes into the p-type element. If a power source is provided, the thermoelectric device may act as a cooler. This is the Peltier effect. Electrons in the n-type element will move opposite the direction of current, and holes in the p-type element will move in the direction of current, both removing heat from one side of the device.
- 42. TE Couple and Module P N P N PowerGenerationMode CoolingMode HeatSink HeatRejection ActiveCooling I I HeatSource Operating Modes of a Thermoelectric Couple Modules T. M. Tritt, Science 31, 1276 (1996) www.marlow.com