Nanowire FET based BioSensor for label free Detection
- 1. Vol.:(0123456789) 1 3 Journal of Electronic Materials (2024) 53:683–692 https://doi.org/10.1007/s11664-023-10862-4 ORIGINAL RESEARCH ARTICLE Gate Engineered Ferroelectric Junctionless BioFET for Label‑Free Detection of Biomolecules Snehlata Yadav1 · Sonam Rewari1 · Rajeshwari Pandey1 Received: 14 September 2023 / Accepted: 27 November 2023 / Published online: 31 December 2023 © The Minerals, Metals & Materials Society 2023 Abstract A gate engineered ferroelectric junctionless field-effect transistor biosensor (BioFET) is proposed and investigated for label-free detection of various biomolecules. A nanocavity is created by etching a part of the gate oxide material on the top and bottom of the device, which allows biomolecules to get immobilized. The immobilization of biomolecules in the cavity causes changes in electrostatic characteristics such as surface potential, input and output characteristics, transconductance, output conductance, gate capacitance, and cutoff frequency used as sensing metrics. The biosensor is also examined at differ- ent biomolecule concentrations (−1× 1012 cm−2 , 0 cm−2 , and 1× 1012 cm−2 ). The transistor’s sensitivity is then understood by looking at the fluctuation in threshold voltage, subthreshold swing, and switching ratio. The performance is compared between the ferroelectric junctionless BioFET and the gate engineered ferroelectric junctionless BioFET. The results indicate that the gate engineered ferroelectric junctionless BioFET shows the maximum improvement for protein (1202.4%, 111%, and 565%) and DNA (787.5%, 117.3%, and 600%). The gate engineered ferroelectric junctionless BioFET is shown to be suitable for ultrasensitive bio-sensing applications. Keywords Biosensor · ferroelectric · junctionless · sensitivity · biomolecules · immobilization Introduction The current research focus has been addressing challenges that conventional complementary metal–oxide–semiconduc- tor (CMOS) technology faces, including voltage scaling and short-channel effects (SCEs).1 The junctionless dual-gate metal–oxide–semiconductor field-effect transistor (MOS- FET), immune to short-channel effects and possessing sev- eral unique features, is an outstanding alternative device architecture for CMOS technology.2 The most prominent challenge in fabricating short-channel devices is forming source/channel and channel/drain junctions in typical MOS- FETs.3 Several advantageous qualities of junctionless (JL) MOSFETs include the absence of sharp junctions, which is challenging to achieve, along with a streamlined fabrication technique and other benefits.4 Field-effect transistor-based electrochemical biosensors have garnered the most atten- tion in the research community because they have numerous benefits over other biosensors, including compatibility with CMOS technology, label-free detection, increased scaling, and inexpensive production costs. They could be suitable for use in upcoming biosensor applications because of these qualities. FET-based biosensors have many applications, including label-free detection of charged bio-analytes.5 Biomolecules change the sensors’ electrical responses by modifying the gate terminals’ functioning. Dielectrically regulated field-effect transistors, which exploit the dielectric constant of biomolecules, have recently sparked much atten- tion.6 This technology can detect charged and uncharged biomolecules at various concentrations. Advancement in the technology and device engineering has a huge impact on the evolution of biosensors and their designing principles.7–9 Various biosensors have been designed and reported, such as surrounding-gate MOSFETs, gate-all-around tunnel FETs, and Ge/Si-interfaced label-free nanowire field-effect transis- tor biosensors (BioFETs). These biosensors have improved sensitivity and serve in different sensing applications.10–14 There have been numerous FET-based nanoscale sensors presented recently, and to improve sensitivity and detection, more design parameter optimization is required.15,16 * Sonam Rewari rewarisonam@gmail.com 1 Department of Electronics and Communication Engineering, Delhi Technological University, New Delhi, India
- 2. 684 S. Yadav et al. 1 3 Larger sensitivity in terms of current is required to detect biomolecule species at very low concentrations. The maxi- mum current sensitivity for FET-based biosensors can be achieved when the device is operated in the subthreshold range.17,18 On the other hand, the so-called Boltzmann tyr- anny limits the subthreshold swing (SS) in typical FET- based biosensors to a minimum of 60 mV/decade at ambient temperature, lowering the maximum current sensitivity.19 As technology has improved, the demand for efficiency has increased substantially. Therefore, shifting to an advanced technology that can handle these difficulties is mandatory. Negative-capacitance field-effect transistors (NCFETs), a form of the steep-switching device based on ferroelectrics, offer a potential solution to overcome the Boltzmann limit of SS and achieve a swing of less than 60 mV/decade.19 Recent research shows that HfO2 exhibits ferroelectric behavior when doped with elements such as Y, Zr, Al, Si, and others at different mole concentrations and annealing temperatures.20 It has been found in previous research that the mechanical encapsulation of thin sheets of zirconium-doped hafnium oxide (HZO) forms an orthorhombic phase. It possesses a piezoelectric response, and polarization tests have proved that it is ferroelectric. According to studies, HZO has a low dielectric constant (about 30), indicating that it can be scaled down to meet existing technological nodes.21 As a result, these materials are excellent candidates for application as ferroelectric materials. The benefits of the ferroelectric layer and junctionless structures, as well as the creation of cavities in the oxide regions for inserting the biomolecules, is what distinguishes our work. A dielectric-modulated FET can be used to implement this form of a biosensor.22 Even though simulation and modeling of dielectric-modulated FETs have been documented in many publications, they are typically used for sensing biomolecules in dry environments.22–24 The key novelty of this work is the incorporation of the ferro- electric layer in the junctionless structures, as well as the creation of cavities in the oxide regions for inserting the bio- molecules. Our suggested study is more innovative because there are no ferroelectric junctionless FET-based biosensors in the literature. Therefore, a gate engineered ferroelectric junctionless BioFET (GE-FJ-BioFET) capable of detecting diverse biomolecules such as enzymes, proteins, and DNA25 is described in this study. Ferroelectric material used as gate oxide material improves the subthreshold swing, improves the gate control over the channel, and establishes its applica- bility in low-power biosensor design. The proposed biosen- sor provides advantages such as high sensitivity, selectivity, label-free detection, compatibility, and fabrication feasibil- ity. These qualities make them well suited for various medi- cal applications. This device could be a significant contender for CMOS technology in the future since it can overcome the critical limitations of complex fabrication methods and operate at lower voltage limits, thereby eliminating the problem of excessive chip heating.26 Analysis of ballistic transistors is not intended to allow for accurate prediction of actual device characteristics. A ballistic transistor is an ideal device that can never be achieved.27 From the litera- ture, it has been reported that the internal gate capacitance in the ballistic case worsens the capacitance matching and in turn reduces the voltage amplification effect of the negative capacitance (NC).28 Therefore, these models have not been considered in this work. Furthermore, various studies have outlined fabrication methods for JL transistors and ferroelec- tric FETs (FeFETs);29–31 as a result, the suggested device may be produced using current technologies. The section “Device Structure, Simulation, and Calibration” describes the device structure, simulation of the gate engineered fer- roelectric junctionless BioFET, and calibration with experi- mental work. The results and discussion are covered in the “Results and Discussion” section. The “Conclusion” section concludes the work. Device Structure, Simulation, and Calibration Figure 1 depicts a two-dimensional (2D) schematic cross- sectional view of the GE-FJ-BioFET. The device employs an n-type doped, symmetric double-gate junctionless transistor with a ferroelectric layer and two biomolecule nano-cavities. The doping concentrations are assumed to be 1019 cm−3 across the source, drain, and channel. The thicknesses of the ferroelectric (tfe), oxide (tox), and channel (tch) are 5 nm, 2 nm, and 20 nm, respectively. The GE-FJ-BioFET analyzes each dielectric constant to identify biomolecules, including biotin, APTES, protein, and DNA.32 The biomolecules are inserted into the gate stack’s nano-cavities. The dielectric constant of each of the biomolecules is shown in Table I. The biomolecules are placed in the nano-cavities created in the gate stack. The cavity region is filled with air in the absence of biomolecules, i.e., ε=1, and when the dielectric constant ε > 1, the cavity region is infused with biomolecules. The calibration of the simulated work with the experimental work33 is shown in Fig. 2a. The simulations are performed using the Silvaco ATLAS technology computer-aided design (TCAD) simulator, with the Lombardi concentration, volt- age, and temperature (CVT) model, Shockley–Read–Hall (SRH) recombination, Fermi, and Landau–Khalatnikov (LK) models34 explained in Table II. Figure 3 depicts the contour plots for electron concentra- tion in the channel region at different dielectric constants. When biomolecules are added to the cavity region, charges are induced in the channel below the cavity. As shown in Fig. 3, the amount of charge produced depends on the bio- molecule’s dielectric constant.
- 3. 685 Gate Engineered Ferroelectric Junctionless BioFET for Label‑Free Detection of Biomolecules 1 3 Results and Discussion Biomolecules have dielectric properties as well as charge concentration. Variations of biomolecule species and their concentrations have been investigated for biomolecule detection. The dielectric variation of biomolecules is con- sidered when examining the electrical characteristics of the GE-FJ-BioFET for biomolecules with dielectric prop- erties and concentrations. The biomolecule concentrations used to analyze the electrical properties of GE-FJ-BioFET Fig. 1 (a) Schematic of gate engineered ferroelectric junctionless BioFET (GE-FJ-BioFET), (b) equivalent capacitance model, (c) the double- well ferroelectric energy versus polarization using LK theory, and (d) ferroelectric polarization as a function of electric field. Table I Biomolecule with dielectric constant variations Biomolecule Dielec- tric constant Biotin35 2.63 APTES36 3.57 Protein37 6 DNA38 8 Fig. 2 Calibration with the experimental work.
- 4. 686 S. Yadav et al. 1 3 with charge density variation and constant dielectric are −1 × 1012 cm−2 , 0 cm−2 , and 1 × 1012 cm−2 . GE‑FJ‑BioFET as a Biomolecule Species Sensor As seen in Fig. 4a, changes in the dielectric constant have an impact on the surface potential of the GE-FJ-BioFET. As illustrated, a drop in the potential is observed as the biomol- ecule with n increasing dielectric constant is introduced. A drop in the potential reduces the drain current in the device and raises the threshold voltage. The effectiveness of the GE-FJ-BioFET as a biomolecule species sensor can be determined by the device electrical parameters, investigated using the device transfer character- istics, transconductance (gm), threshold voltage (Vth), Ion/Ioff ratio, and subthreshold swing (SS). Figure 5a and b dem- onstrate the drain current and transconductance fluctuation for different biomolecule species. The drain current reduces as the biomolecule dielectric increases because of a fall in the surface potential of the device in the channel region. Also, as shown in Fig. 5b, the transconductance decreases as the dielectric constant increases. Figure 6 depicts the changes in output characteristics and output conductance Table II Physical models used for the simulations Model Description Lombardi CVT model This model overrides any other mobility models which may be specified in the MODELS statement Shockley–Read–Hall (SRH) recombination model The Shockley–Read–Hall (SRH) recombination model with concentration-dependent lifetimes accounts for the recombination of minority carriers Fermi model This model introduces Fermi statistics recombination into intrinsic concentration calculation Landau–Khalatnikov ferroelectric model The model is enabled by specifying the flag LKFERRO on the INTERFACE statement, along with the LKCORECIVE and LKREMNANT parameters Fig. 3 Electron concentration in the channel region of the GE-FJ-BioFET at different dielectric constants. Fig. 4 Surface potential of GE-FJ-BioFET at varying (a) dielectric constants and (b) biomolecule concentrations.
- 5. 687 Gate Engineered Ferroelectric Junctionless BioFET for Label‑Free Detection of Biomolecules 1 3 Fig. 5 (a) Transfer characteristics and (b) transconductance of devices with variations in the dielectric constant. Fig. 6 (a) Output characteristics and (b) output conductance for different biomolecule dielectric constants. Fig. 7 (a) Total gate capacitance and (b) cutoff frequency of the devices for different biomolecule species.
- 6. 688 S. Yadav et al. 1 3 with different biomolecule dielectric constants. As observed, the output characteristics decreases with an increase in the dielectric constant. It is also evident from the figures that the performance of the GE-FJ-BioFET is high when com- pared to the FJ-BioFET. Figure 7a and b show the total gate capacitance (CGG) and cutoff frequency (fT), which shows that both parameters increase when the dielectric constant increases. The threshold voltage sensitivity is investigated with increasing dielectric constant with regard to air in the cavity, and the results are depicted in Fig. 8a. The figure shows that the threshold voltage sensitivity increases as the dielectric constant increases, allowing biomolecules to be detected. Furthermore, the GE-FJ-BioFET biosensor’s sen- sitivity concerning the SS and Ion/Ioff is illustrated in Fig. 8b and c. The sensitivity can be formulated as follows39 : (1) SVth = Vth,bio − Vth,air Vth,air (2) SSS = SSbio − SSair SSair (3) SIon∕Ioff = Ion∕Ioffbio − Ion∕Ioffair Ion∕Ioffair As is evident from the figure, the GE-FJ-BioFET is highly sensitive for protein and DNA when compared with the other device. The sensitivity in terms of Vth, SS, and Ion/Ioff with variations in dielectric constants are listed in Table III. The protein and DNA biomolecules show a more sig- nificant sensitivity improvement. The % improvement for protein is 1202.4%, 111%, and 565%, whereas for DNA, it is 787.5%, 117.3%, and 600%. The devices are compared, and it is found that the GE-FJ-BioFET is highly sensitive and constitutes a good choice for biosensing applications. GE‑FJ‑BioFET as a Biomolecule Concentration Sensor The biomolecule concentration affects the device surface potential, as shown in Fig. 4b. Negatively charged bio- molecules decrease the device’s potential in the channel region, while positively charged biomolecules increase it. When the potential increases, the current flow increases, and the threshold voltage decreases, but when the poten- tial decreases, the current flow decreases, and the thresh- old voltage increases. The influence of biomolecule charge concentration fluctuation on the device electrical parameters including device transfer characteristics, transconductance (gm), threshold voltage (Vth), Ion/Ioff ratio, and subthreshold swing (SS) was investigated. The fluctuation in the device transfer characteristics and transconductance with biomolecule charge concen- tration is depicted in Fig. 9a and b. The drain current is Fig. 8 Sensitivity comparison in terms of (a) Vth, (b) SS, and (c) Ion/Ioff ratio for different biomolecule species. Table III Device sensitivity with dielectric constant variation Dielectric constant (ε) SVth SIon/Ioff SSS FJ-BioFET GE-FJ-BioFET % improve- ment (%) FJ-BioFET GE-FJ-BioFET % improve- ment (%) FJ-BioFET GE-FJ-BioFET % improve- ment (%) Biotin 0.00633 0.00949 50 0.1066 0.18488 73.4 0.01587 0.03333 110 APTES 0.00949 0.0427 350 0.18441 0.33564 82 0.03175 0.1 215 Protein 0.00949 0.1236 1202.4 0.35151 0.74205 111 0.04762 0.31667 565 DNA 0.01899 0.16854 787.5 0.4720 1.02601 117.3 0.04762 0.33333 600
- 7. 689 Gate Engineered Ferroelectric Junctionless BioFET for Label‑Free Detection of Biomolecules 1 3 higher for positively charged biomolecule because the sur- face potential is higher in the channel region and lower for negatively charged biomolecules because the surface potential is lower in the channel region. Additionally, the transconductance is also higher for positively charged biomolecules. The output characteristics are depicted in Fig. 10a and b, which shows that the performance of the GE-FJ-BioFET is better than that of the FJ-BioFET. The sensitivity in terms of Vth, SS, and Ion/Ioff with positively and negatively charged biomolecules about neutral bio- molecules in the cavities is illustrated in Fig. 11a, b, and c, which shows higher sensitivity for the GE-FJ-BioFET Fig. 9 (a) Transfer characteristics and (b) transconductance at different biomolecule concentrations. Fig. 10 (a) Output characteristics and (b) output conductance at different biomolecule concentrations. Fig. 11 Sensitivity comparison in terms of (a) Vth, (b) SS, and c Ion/Ioff ratio at different biomolecule concentrations.
- 8. 690 S. Yadav et al. 1 3 in terms of Vth, SS, and Ion/Ioff for negatively charged biomolecules. Table IV shows the comparison of the GE-FJ-BioFET and FJ-BioFET at different biomolecule concentrations with respect to Vth, SS, and Ion/Ioff. Improvement in the sensitivity is 2003.3% for Vth, 100.3% for Ion/Ioff, and 726.6% for SS in a DNA biomolecule. Therefore, it can be concluded that the GE-FJ-BioFET is more sensitive than the FJ-BioFET. Selectivity Analysis, Limit of Detection, and Hot Carrier Effect on Biosensor A key characteristic of biosensors is selectivity, which describes how well a biosensor can bind to the desired target biomolecule while actively rejecting or excluding all other biomolecules. Mathematically, selectivity is determined by calculating the relative ratio of the drain current at various dielectric constants, which corresponds to different biomol- ecules.40 This calculation is expressed in Eq. 4. (4) Selectivity, ΔSIon∕Ioff = Ion∕Ioff (𝜀 = 2.63, 3.57, 8) − Ion∕Ioff (𝜀 = 6) Ion∕Ioff (𝜀 = 6) Figure 12 presents a comparison of selectivity between the proposed and conventional devices. It is evident that the selectivity of the proposed device significantly surpasses that of the conventional device, ranging from two to three times, depending on the specific target biomolecules. The selectivity of the biomolecules has been calculated using Eq. 4, with a parameter value of ε=6, and the results are displayed in Fig. 12. Figure 13 shows the plot of limit of detection (LOD) for different biomolecules with a standard deviation of 3.039E−05 for air, 3.012E−05 for biotin, 2.999E−05 for APTES, 2.976E−05 for protein, and 2.963E−05 for DNA. The LOD of the biosensor is elevated when a biomolecule is present, signifying a greater concentration of the analyte in the sample that can be identified, though not necessarily precisely measured.5 These results provide insights into the importance of regulating parameters to enhance sensitivity and reduce operational variability in the design and produc- tion of FET-based biosensors. The hot carrier effect is a phenomenon observed in field- effect transistors, including negative-capacitance FETs, and it has implications for the reliability and performance of Table IV Device sensitivity with respect to biomolecule charge concentration Charge density SVth SIon/Ioff SSS FJ-BioFET GE-FJ-BioFET % improve- ment (%) FJ-BioFET GE-FJ-BioFET % improve- ment (%) FJ-BioFET GE-FJ-BioFET % improve- ment (%) −1e12 0.0085 0.17879 2003.4 0.61403 1.22997 100.3 0.03226 0.26667 726.6 0 0.00946 0.16816 1677.5 0.47436 1.03164 117.5 0.04762 0.11667 145 1e12 0.00719 0.14528 1920.5 0.39914 0.84623 112 0.04762 0.18333 285 Fig. 12 Selectivity of the proposed biosensor. Fig. 13 Limit of detection (LOD) plot for different biomolecules with a standard deviation of 3.039E−05 for air, 3.012E−05 for biotin, 2.999E−05 for APTES, 2.976E−05 for protein, and 2.963E−05 for DNA.
- 9. 691 Gate Engineered Ferroelectric Junctionless BioFET for Label‑Free Detection of Biomolecules 1 3 these devices. To mitigate the hot carrier effect in our device, several strategies have been employed such as the selection of an appropriate ferroelectric material having high polari- zation and high breakdown voltage, and gate stack engi- neering which helps in reducing the impact of hot carriers on the device. Hence, from the whole analysis of the pro- posed biosensor, it is evident that key performance metrics, including threshold voltage, SS, and Ion/Ioff ratio, demon- strate enhancements compared to conventional devices. This renders the recommended device more resilient to the effects associated with hot carriers. Conclusion A gate engineered ferroelectric junctionless BioFET (GE- FJ-BioFET) sensor has been investigated owing to its strong sensing capability. Various sensing parameters such as input and output characteristics, gm, Vth, SS, Ion/Ioff, Cgg, and fT have been considered for detecting the immobilized bio- molecules in the cavity area. Sensitivity has been obtained by varying the dielectric of biomolecule species and their concentration. A comparison between the GE-FJ-BioFET and FJ-BioFET shows that the GE-FJ-BioFET transistor exhibits an excellent improvement in sensitivity. The % improvement in Vth, SS, and Ion/Ioff for protein is 1202.4%, 111%, and 565%, whereas for DNA it is 787.5%, 117.3%, and 600%, respectively. As a result, the research presented in this study demonstrates that the GE-FJ-BioFET is better suited for applications requiring ultrasensitive biosensing. Additionally, techniques like material engineering using different channel materials, such as silicon–germanium and III-V compound semiconductors, can be employed to enhance carrier mobility and further improve the perfor- mance of the device. 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