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International Journal of VLSI design & Communication Systems (VLSICS) Vol.5, No.5, October 2014 
OPTIMIZATION OF CMOS 0.18 M LOW NOISE 
AMPLIFIER USING NSGA-II FOR UWB 
APPLICATIONS 
V. P. Bhale* and U. D. Dalal 
VLSI Design Laboratory, Department of Electronics Engineering 
Sardar Vallabhbhai National Institute of Technology (SVNIT), 
Surat-395 007,Gujrat, India 
ABSTRACT 
A design and optimization of 3-5 GHz single ended Radio Frequency (RF) Low Noise Amplifier (LNA) for 
ultra-wide-band (UWB) applications using standard UMC 0.18 μm CMOS technology is reported. 
Designing of RF circuit components is a challenging job, since even after performing lengthy calculations 
and finding parameter values it is less guarantee that the design performs as expected. In view of this the 
optimization tool; Elitist Non-Dominated Sorting Genetic Algorithm (NSGA-II); has been employed to get 
the optimized starting values of components in the proposed LNA design. The obtained NSGA-II 
parameters were simulated using Cadence Spectre- RF simulator. The designed Low Noise Amplifier 
achieves a power gain of 22 dB and a minimum Noise Figure of 3 dB is achieved. It dissipates 12.5 mW of 
power out of 1.8 V supply. 
KEYWORDS 
LNA, NSGA-II Algorithm, Noise Figure, Power Gain, return losses 
1. INTRODUCTION 
Recent years have experienced explosive growth in the Radio Frequency /microwave 
semiconductor industry owing to the proliferation of a host of applications. Single-chip Bluetooth 
devices are already available and similar integration is likely to be achieved in cellular telephones 
and wireless networking in near future. Radio Frequency components are the basic building 
blocks of transceivers operating in GHz frequency range. Designing of RF circuit component 
needs lot of effort. After performing lengthy calculations and finding the parameter values it is 
not guaranteed that the circuit performs as expected. In Radio Frequency Integrated Circuits 
(RFIC), Low Noise Amplifiers are considered as black magic box because of their uncertain 
response with higher frequencies. Due to mismatch of input impedance and output impedance 
maximum power transformation is not possible. For Designing of the tank circuit, input and 
output impedance circuit, we need to design a passive filter with optimized component values. 
Optimization of the component value is a time consuming job. In view of this a CAD tool using 
Non-Dominated Sorting Genetic Algorithm (NSGA-II) has been employed. The design goal is 
formulated as an objective function. Some approximations and estimations on the design 
parameters are made in order to satisfy the requirement of the genetic algorithm. Many 
applications of genetic algorithm and optimization of LNA parameter by binary coded genetic 
algorithm is reported in [2, 3]. In this paper the design and optimization of single ended LNA 
using real coded genetic algorithm is presented. The rest of the paper is organized as: section-II 
gives brief introduction of Non-Dominated Sorting Genetic Algorithm. In section-III analysis and 
DOI : 10.5121/vlsic.2014.5505 59
International Journal of VLSI design  Communication Systems (VLSICS) Vol.5, No.5, October 2014 
design problem of low noise amplifier is presented, in section-IV design objective and constrains 
optimization of LNA is mentioned. In section-V simulation result and discussion is presented. 
Scope and limitation of the NSGA-II has been discussed in section-VI and finally section-VII 
concludes the paper. 
60 
2. ELISTIST NON-DOMINATED SORTING GENETIC ALGORITHM 
(NSGA-II) 
Genetic algorithms [3, 4] are search techniques used in computing to find true or approximate 
solutions to search or optimization problems. It is based on the concepts of natural selection, 
reproduction and mutation and has been used extensively in optimization problems. It can be 
classified in two sets depending on type of coding of the members; one is binary coded and the 
second is real coded [3]. In the past few years GA has undergone lots of developments developing 
its features, processing time, etc., some such developments are Multi Objective Genetic 
Algorithm (MOGA) [5,6], Elitist Non Dominated Sorting Genetic Algorithm [3]. 
3. ANALYSIS AND DESIGN OF LOW NOISE AMPLIFIER 
The early part of this section is based on the literature survey and concludes with own design. As 
one of the essential components, Low Noise Amplifiers (LNAs) for wireless applications have 
attracted significant research interest and various approaches to the design of narrow band LNAs 
(operating below 3 GHz) and wideband LNAs (operating above 3 GHz) have been proposed 
previously [7-15] and as shown in Fig. 1(a-d). Distributed amplifiers [7] can provide very large 
bandwidth because of their unique gain-bandwidth tradeoff. However, large power consumption 
and chip area make them unsuitable for typical low –power, low cost wireless applications. 
Figure 1. Various LNA Topologies (a) Distribute amplifier, (b) common gate, (c) inductive degeneration, 
(d) resistive feedback
International Journal of VLSI design  Communication Systems (VLSICS) Vol.5, No.5, October 2014 
Common-gate amplifiers [8, 9] exhibit excellent wide band input matching, but suffer from a 
relatively large noise figure (NF). Narrow-band LNAs like an inductively degenerated common-source 
amplifier can also be converted into a wideband one by adding a wideband input matching 
network [10]. However, the insertion loss of the passive input matching degrades the NF rapidly 
with frequency. Resistive-feedback amplifiers [11, 12-14] have very good wideband input 
matching characteristics. However, low NF and low power consumption can be hardly achieved 
simultaneously across a large frequency range. In [15], the noise cancellation technique is used to 
relax this trade-off in resistive feedback amplifiers. 
61 
(a) (b) 
Figure 2. (a) Inductive source degeneration, (b) Small signal equivalent of 2(a) 
A typical LNA must fulfill several challenging requirements. The LNA must provide a good input 
matching over a band more than 500 MHz. A high gain is also preferred to amplify the weak 
signals at the receiver and to overcome the noise effects from the subsequent stages. In addition, 
the noise figure of the LNA must be low (typically  3 dB) since it plays a major role in defining 
the receiver's sensitivity. Moreover, the LNA also has to be power efficient and physically small 
to save power and reduce the cost, respectively. An inductively degenerated LNA configuration is 
proposed, as shown in Figure 2 (a). Inductive degeneration improves the linearity of the amplifier. 
The input impedance can be derived from the small signal analysis [16] of Figure 2 (b). By 
looking into the input side of Figure 2 (b), input impedance Zin can be: 
g 
1 
= ( + ) + + + 
Z s L L R ( ) 
in s g g L 
s 
m 
gs 
gs 
C 
sC 
(1) 
Where Ls, Lg are the source and gate inductances, respectively; Rg is the transistor gate resistance, 
Cgs is the transistor gate-to-source capacitance; gm is the transistor trans-conductance. The 
inductor parasitic resistance is ignored here. Input match requires that at the resonance frequency 
of the circuit, the impedance of the input stage is purely real and should be equal to 50 W. It 
follows that: 
m 
g 
+ ( ) = 50 s 
g L 
gs 
C 
R 
(2) 
Where w0 is the resonance frequency (rad/s), and
International Journal of VLSI design  Communication Systems (VLSICS) Vol.5, No.5, October 2014 
62 
0 
1 
( + ) 
+ = 
0 0 
gs 
j L L 
s g j C 
w 
w 
(3) 
The noise factor (F) is defined as [7, 8]: 
g 
R 
R 
w 
g 
0 2 1 ( ) 
T 
l g R 
m s 
s 
s 
R 
R 
F 
w 
a 
= + + + 
(4) 
10 log ( ) 10 NF = × F 
Where unity frequency: 
, 
w = m 
gs 
g 
T C 
m 
g 
d 0 
g 
a º , Rs : source resistance, 
Rl : series resistance of inductors, Rg : gate resistance, g: the thermal noise coefficient, w0 : the 
resonance frequency, gm: transistor trans-conductance. For a source inductively degenerated 
LNA in Fig.2, we could put a lower bound on the trans-conductance of the input transistor to 
ensure that the final designed LNA can provide a reasonable gain [9] 
 
  
 
 
  
 
− 
 
  
 
 
  
 
= = 
jw L 
0 1 
1 0 
2 
0 
1 
0 1 
w L C 
jw L 
A G Z 
s 
V m eq 
(5) 
In order to formulate a geometric programming problem, we have to do some transformation and 
introduce a new variable to satisfy the requirement of geometric programming on the objective 
and constraints. Inequality constraints, and the objective function must be in the form of 
polynomial, equality constrains must be in the form of monomial. Here noise figure and gain are 
formulated for low noise amplifier. For low noise amplifiers, Objective function of Noise Figure 
can be formulated as: 
( )2 
min 50 0.02 n opt F = F + × R × − G 
(6) 
Where, 
1 2 (1 ) 2 
+ × × × × − 
W C 
5 
0 
= 
min Wt 
× 
F 
d g 
m G 
Rn 
× 
= 
a 
g 
× − 
g 
d 
a 
× 
= × × 
5 
(1 ) 2 
0 
C 
Gopt W Cgs 
The objective function of the Gain of LNA can be formulated as: 
× 
t load 
W R 
load 
W R 
Gain 
× × 
= 
2 0 (7) 
And the objective function of power consumption has been formulated as: 
DC D DC P = I × V 
(8) 
Where, 
μ 
× C × Width × 
V 
2 I n ox od 
ChannelLen gth 
= 
D 2 
× 
In above equation, second order effects on drain current have been neglected to reduce the 
complexity of the program. As the schematic diagram of the LNA is depicted in Figure 3, an
International Journal of VLSI design  Communication Systems (VLSICS) Vol.5, No.5, October 2014 
input impedance matching circuit is needed to match the source impedance to transistor input 
impedance. Objective function for Input impedance can be formulated from following equation. 
63 
s 
m 
g 
1 
= ( + ) + + + 
Z s L L R ( ) 
in s g g L 
gs 
gs 
C 
sC 
(9) 
Ls and Lg is used to tune the input impedance (Zin) to 50W at 3 GHz frequencies. Cgs and Rg 
Model the impedance looking into the gate of MOSFET. Here we can include pad capacitance 
and bond wire inductance also [10]. 
4. DESIGN OBJECTIVES AND CONSTRAINT OPTIMIZATION FOR 
NSGA-II 
The simulations have been done for LNA with following constraints. Based on the technology 
parameters following have been defined as constant: 
= W = W = 
μ 
( / 2 ) 8 .632 , ( ) 50 , ( ) 50 , 
Cox fF m Rs RL 
b g μ l 
W = = = = 
( / nH ) 1, 2 .5, L ( m 
) 0 .18 , 0 .5, 
= = 
0 .47 , 1 .8 
Vth V Vdd V 
Design constraints for the component of circuit were taken as follows: 
(1) 5 £ W1 £ 105μm (2) 0.1 £ Ls £ 50 nH 
(3) 0.1 £ Lg £ 50nH (4) 0.1 £ C £ 0.5 pF 
Simulations have been done with these parameters using NSGA-II. The NSGA parameters that 
were given are as follows: Mutation probability= 0.23671, Population size=100, Crossover 
Probability=0.99431, Number of generations=50. 
5. SIMULATION RESULTS AND DISCUSSIONS 
5.1. Simulation results using NSGA-II 
The above mentioned optimization technique is implemented for Low Noise Amplifier design to 
optimize gain and noise figure. Direct equations have been used for gain and noise figure which 
were calculated for cascode LNA with inductive source degeneration. Program structure for LNA 
optimization using NSGA-II is shown in Figure 3 below. The “func-con. h” header file has been 
modified and the fitness functions and constraint functions have been replaced with the equations 
as discussed in section 3. Also, “LNA_equations.h” file has been added, which actually evaluates 
all these equations. 
LNA Equations header file 
NSGA-II Optimization Core 
Input file 
handler 
Output file handler 
Figure 3. LNA Optimization Program Structure
International Journal of VLSI design  Communication Systems (VLSICS) Vol.5, No.5, October 2014 
After NSGA-II optimizer generates output files, another program convert those into design 
parameters and we can plot those values using GNUPLOT software as plotted in Figure 4(a-f). 
The trans-conductance, gm, of the device is very much important to achieve good gain for LNA. 
However, this gm depends on the transistor width. Also, gm/ID ratio needs to be maintained to 
achieve a required LNA gain. Thus, the width of the transistor needs to be chosen to give enough 
gain and minimum noise figure. From Figure 4 (a), thus, ‘W’ is chosen to be 105 μm. The 
overdrive voltage is one of the important parameters for transistor operating point analysis. The 
transistor should operate in the desired operating region for maximum gain. Thus, plots in Figure 
4 (b) are plotted using NSGA-II to guess the initial overdrive voltage required for the transistor to 
be in the desired operating region. 
The optimized value of food is chosen to be 0.35 V from Figure 4 (b) since at this overdrive 
voltage maximum gain with low noise figure can be achieved simultaneously. The role of a 
source degenerated inductor (Ls) here is to match the input impedance to 50  with low noise. 
From Figure 4 (c), it can be seen that the noise is increasing with Lsource .Thus the optimum value 
of source at a minimum noise figure is chosen to be 0.27 NH. 
64 
(a) 
(b)
International Journal of VLSI design  Communication Systems (VLSICS) Vol.5, No.5, October 2014 
65 
(c) 
(d) 
(e)
International Journal of VLSI design  Communication Systems (VLSICS) Vol.5, No.5, October 2014 
66 
(f) 
Figure 4. Simulation results using NSGA-II (a) Noise vs. Gain vs. Width of the transistor, (b) Noise vs. 
Gain vs. Overdrive voltage, (c) Noise vs. Lsource (d) Power dissipation vs. Lsource , (e) Gain vs. Lsource  
(f) Power vs. Noise vs. Gain 
The effect of variation of a source inductor in power consumption can be seen from Figure 4 (d), 
where it can be seen that with the increase in value of source degeneration inductor; power 
dissipation reduces. But, for RF design the inductor should not be bulky. There always exists a 
trade-off among power dissipation, gain and noise figure for a Low Noise Amplifier design. The 
same can be seen in Figure 4 (e). While, from Figure 4 (f), it can be seen that the gain reduces 
with the increase in value of the source degenerated inductance. Thus, Lsource = 0.2 nH has been 
chosen as further optimized value which gives the best compromise between gain and noise 
figure trade-off. 
5.2. Simulation of LNA using Specter RF 
The initial start up values given after running NSGA-II algorithm has been used for the designing 
of CMOS Low Noise Amplifier for 0.18 μm technology. The design is finally simulated using the 
Cadence Specter design tool. Figure 5 shows the proposed current reused LNA design. The S-parameter 
analysis is performed to obtain the gain and noise figure parameters. Also parallel LC 
tank circuit at the output tunes to the resonating frequency of 4 GHz. Capacitors at the input and 
output are dc blocking capacitor. The source terminal inductor (Ls) needs to be properly design to 
have a 50  input matching. The dc blocking capacitors has been chosen to be of 103 fF each. 
While Lg is calculated from Eq. (13), once the optimum value of Ls is chosen to be 0.2 nH. 
Usually the value of a lead is picked up from the available literature as references and accordingly 
the parallel tuning capacitor needs to be tuned to operate at 4 GHz frequency. The value of bias 
resistor, Rbias, is chosen to be large to minimize the noise entering into the design.
International Journal of VLSI design  Communication Systems (VLSICS) Vol.5, No.5, October 2014 
67 
Figure 5. Proposed current reused two stage LNA 
5.2.1. Parametric analysis 
The parametric analysis is used for automating the generation of multiple simulations to test the 
effect of a source degeneration inductor (Ls) variation on the small signal gain (S21). Ls is sweep 
from 50 pH to 200 pH as shown in Figure 6. It is observed that for 3-5 GHz band gain flatness is 
good for Ls as 200 pH, so, Ls is chosen to be 200 pH. 
Figure 6. Parametric Analysis for Small Signal Gain
International Journal of VLSI design  Communication Systems (VLSICS) Vol.5, No.5, October 2014 
68 
Figure 7. Overall S-parameter response of Single stage LNA 
5.2.2. S-Parameter analysis 
The simulated S-parameter results are as shown in Figure 7. The simulated results show that the 
LNA has a maximum flat gain of + 22 dB from 3 to 5 GHz band. Also, Figure 8 shows a smith 
chart analysis plots for input impedance matching. From smith chart it can be seen that the real 
part of the impedance is matched to 47 . Thus minimum input and output return loss of  -10 
dB each can be observed for 3 to 5 GHz. The input and output return losses have to be further 
improved by proper matching. The LNA also attends a high reverse isolation (S12) of  - 40 dB 
for 3 to 5 GHz. 
Figure 8. Input Impedance Matching using smith chart
International Journal of VLSI design  Communication Systems (VLSICS) Vol.5, No.5, October 2014 
69 
5.2.3. Stability analysis 
In the presence of feedback paths from the output to the input, the circuit might become unstable 
for certain combinations of source and load impedances. An LNA design that is normally stable 
might oscillate at the extremes of the manufacturing or voltage variations, and perhaps at 
unexpectedly high or low frequencies. The Stern stability factor characterizes circuit stability as 
in equation below: 
Kf= 1+|f |2 -|S11|2 -|S22|2 / 2|S21||S12| (10) 
Figure 9. Stability Analysis 
Where, f = S11S22-S21S12 , If Kf 1 and f  1, then the circuit is unconditionally stable. The 
stability evaluation for the S parameters over a wide frequency range has been done to ensure that 
the Kf remains greater than one for all frequencies. As the coupling (S12) decreases, that is as the 
reverse isolation increases, stability improves. One can use the techniques such as resistive 
loading and neutralization to improve stability for an LNA [11]. Stability analysis shows that Kf 
1 and f  1 across the frequency band of interest, stating that designed LNA is un-conditionally 
stable as shown in Figure 9. 
5.2.4 Linearity analysis 
Linearity is also important parameter for LNA design along with gain. The linearity limits the 
actual power that can be drawn to the load by the LNA. The linearity is simulated using periodic 
steady-state (PSS) analysis. Figure 7 shows the linearity analysis with P1dB compression point of 
-6.46719 dBm at 4 GHz.
International Journal of VLSI design  Communication Systems (VLSICS) Vol.5, No.5, October 2014 
70 
Figure 10. P1dB compression point 
5.2.5. Noise analysis 
The overall noise figure (NF) and minimum noise figure (NFmin) of 2.31 dB and 2.1 dB 
respectively can be seen from Figure 11 for cascade common source with current re-use feedback. 
Table-1 shows the performance summary of the proposed low noise amplifier and its comparison 
with the previously reported LNA designs. At the time of designing parasitic play important role 
in obtained results but here we are not considering them because our first motivation is to take 
initial guess of the values. The design parameters obtained from multi objective genetic algorithm 
is comparable with the result obtained in Cadence Spectre tool. 
Figure 11. Noise Figure plots for two stage LNA
International Journal of VLSI design  Communication Systems (VLSICS) Vol.5, No.5, October 2014 
71 
Table 1 Comparison of Wideband LNAs: Published and the optimized LNA design parameters 
Proposed LNA designs Previously Reported LNA Designs 
Targeted parameters 
Optimized two stage 
LNA design with 
current re-used using 
NSGA-II [15][16] [17] 
[18] 
Technology 0.18μm CMOS 0.18μm CMOS 
0.65 μm 
CMOS 
0.18 μm 
CMOS 
0.18 μm 
CMOS 
Frequency of 
Operation 3-5 GHz 3-5 GHz 0.2-5.2 GHz 1-5 GHz 3-5 GHz 
Supply 
Voltage 1.8 V 1.8 V 1.2 V 1.8 V 1.8 V 
Gain 
20 dB 
22 dB 13-15.6 dB 11-13.7 dB 8.6-9.5 dB 
S11  -10 dB  -10 dB *** -10 dB -10.3 dB 
S22  -10 dB  -10 dB *** *** -11.8 dB 
S12  -10 dB -40 dB *** *** *** 
NF  4 dB 3.5 dB  3.5 5-6.5 dB 2.7 dB 
NFmin  3 dB 3 dB *** *** *** 
P1dB  -10 dBm -6.46719 *** *** *** 
Power  15 mW 12.5 mW *** 9 mW 15 mW 
Note: *** Not mentioned 
6. SCOPE AND LIMITATION OF DESIGNED TOOL 
Designed optimization tool gives only approximate values of the design parameters. This tool is 
designed only for final stages of RFIC design process. Parasitic effects associated with passive 
on-chip components like capacitors, inductors and resistors have not been taken into account for 
shorter simulation time of the circuit. 
7. CONCLUSION 
This paper shows that the optimization of RF Circuits is possible with real coded genetic 
algorithm. It is found that real coded Multi-Objective Genetic Algorithm has many advantages 
over binary coded genetic algorithm. Non-Dominated Sorting Genetic Algorithm is used for 
optimization tool, which is giving comparative results with design software simulation like 
Cadence Spectre tool. In this paper it is shown that the Low Noise Amplifier can be designed for 
the noise figure of 3.5 dB and power gain of 22 dB. The two stage LNA topology with current 
reused technique is designed and optimized for 3-5 GHz UWB applications. The simulated S11 
and S22 parameters are well below – 10 dB is obtained with the simple matching network for the 
desired band of 3-5 GHz. The designed LNA dissipates 22 mW of power out of 1.8 V supply. 
Also the proposed LNA design is found to be unconditionally stable and operates linearly 
throughout the desired band. A comparison between the present results and the results of 
previously reported LNA shows that the reported LNA design reaches the state-of-the-art LNA 
designs for UWB application. In future; the NSGA-II optimization tool can be used to extend for 
3.1-10.6 GHz LNA design for ultra-wide-band wireless RF system. Thus the design tool is useful 
in finding circuit element values quickly reducing the RF circuit designer time.
International Journal of VLSI design  Communication Systems (VLSICS) Vol.5, No.5, October 2014 
72 
REFERENCES 
[1] Federal communications commission (FCC), first order and report,”2002 
[2] Min Chu, “Elitist Non dominated Sorting Genetic Algorithm Based RF IC Optimizer”, IEEE 
Transaction Vol. 52, No.3. 
[3] K. Deb.,“Multi-objective optimization using evolutionary algorithms”, Wiley,2003. Pg.-248- 
[4] D.E. Goldberg, “Genetic Algorithms in Search, Optimization, and Machine Learning”, Addison- 
Wesley Longman Publishing, Co., Inc. Boston, MA, USA. 1989. 
[5] N. Chaiyaratana, A. M .S. Zalzala, “Recent Development in Evolutionary and Genetic Algorithms: 
Theory and Applications,” no. 446, IEE, 1997. 
[6] Deb, K., “Single and Multi-Objective Optimization Using Evolutionary Algorithms”,Kan GAL 
Report No. 2004002, February, 2004. 
[7] B. M. Ballweber, R. Gupta, and D. J. Allstot, “A full integrated 0.5-5.5 GHz CMOS distributed 
amplifier”, IEEE Journal of Solid State Circuit, vol.35, no.2 pp.231-239, Feb. 2000. 
[8] C.F. Liao, S-I Liu, “A broad band noise cancelling CMOS LNA for 3.1-10.6 GHz wireless receivers”, 
IJSSCC, 42(2):329-339, Feb. 2007. 
[9] R. Gharpure, “A broadband low noise front end amplifier for ultra wideband in 0.13 μm CMOS”, 
IEEE Journal of Solid State Circuits, vol 40, no.9 pp.1983-1986, Sep.2005. 
[10] W. H. Chen, G. Liu, B. Zdravko, and A. M. Niknejad, “A highly linear broadband CMOS LNA 
employing noise and distortion cancellation”, in IEEE RFIC Symp. Dig.papers, pp.61-64, 2007 
[11] A Bevilacqua and A.M. Niknejad, “An ultra wide band CMOS LNA for 3.1-10.6 GHz wireless 
receivers”, In ISSCC, Dig.Tech. Papers, pp. 382-533, 2004. 
[12] C. W. Kim, M. S. Kang, P. T. Anh, H. T. Kim, and S. G. Lee, “An ultra-wide band CMOS low noise 
amplifier for 3-5 GHz UWB System”, IEEE J. Solid State Circuits, vol. 40, no.2, pp.544- 547, Feb 
2005. 
[13] R. Ramzan, S. Anderson, J. Dabrowski, and C. Svensson, “A 1.4V 25mW inductor less wideband 
LNA in 0.13μm CMOS”, in ISSCC Dig. Tech. papers, pp.424-425, 2007. 
[14] M. Vidojkovic, M. Sanduleanu, J. V. D. Tang, P. Baltus, and A.V. Roermund, “A 1.2V, inductorless, 
broadband LNA in 90 nm CMOS Low Power”,In IEEE RFIC Symp .Dig. Tech Papers, pp. 53-56, 
2007. 
[15] F. Bruccoleri, E. A. M.Klumperink, and B. Nauta, “Noise Cancelling wideband CMOS LNAs”, in 
ISSCC Dig. Tech. papers, pp.406-407, 2002. 
[16] Ming ShenTian, Jan. H. Mikklensen, Olek Jensen Torben Larsen, “Design and Implementation of a 1- 
5 GHz low noise amplifier in 0.18μm CMOS,” Analog Integrated Circuits and Signal Processing, 
pp.41-48, 2011 
[17] Ji-Hai Duan, Xiao-ting Han, Sheng Li, “A Wideband CMOS LNA for 3-5GHz UWB Systems”, IEEE 
Conference, 2009. 
[18] Andrea Bevilacqua, Christoph Sandner, et.al.,“A Fully integrated Distributed CMOS LNA for 3- 5 
GHz Ultra wideband wireless receivers”, IEEE Microwave and Wireless Components Letters,2006 
AUTHORS 
Vishakha P. Bhale received B.E. (Electronics and Telecommunication) and M.E. (Digital 
Electronics) in 2002 and 2006 respectively. Presently she is pursuing Ph.D. in RF circuit 
designs for wireless communication application using VLSI design. Her area of interest 
is analogue RF circuit designs, Low power VLSI designs, Wireless communication 
system designs for portable applications. 
Dr. Upena Dalal received the B.E. in Electronics from SVRCET, Surat in 1991 and 
obtained M.E. (Electronics  Communications) from DDIT, Nadiad with Gold Medal. 
Presently she is working as Associate Prof. in Electronics Engineering Department, Sardar 
Vallabhbhai National Institute of Technology (SV NIT), Surat,Gujrat, India. She ha s 20 
years of academic experience. She has published 70+ conference and journal papers at 
national and international level. Her book on “Wireless Communication” is published by 
Oxford University Press in July 2009. One more book edited by her and Dr Y P Kosta 
titled “Wi-MAX New Developments” is published by Intech, Vienna, Austria. She has organized 8 National 
level training programs and two international conferences. She is a LM of several technical technical bodies.

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Optimization of Cmos 0.18 µM Low Noise Amplifier Using Nsga-Ii for UWB Applications

  • 1. International Journal of VLSI design & Communication Systems (VLSICS) Vol.5, No.5, October 2014 OPTIMIZATION OF CMOS 0.18 M LOW NOISE AMPLIFIER USING NSGA-II FOR UWB APPLICATIONS V. P. Bhale* and U. D. Dalal VLSI Design Laboratory, Department of Electronics Engineering Sardar Vallabhbhai National Institute of Technology (SVNIT), Surat-395 007,Gujrat, India ABSTRACT A design and optimization of 3-5 GHz single ended Radio Frequency (RF) Low Noise Amplifier (LNA) for ultra-wide-band (UWB) applications using standard UMC 0.18 μm CMOS technology is reported. Designing of RF circuit components is a challenging job, since even after performing lengthy calculations and finding parameter values it is less guarantee that the design performs as expected. In view of this the optimization tool; Elitist Non-Dominated Sorting Genetic Algorithm (NSGA-II); has been employed to get the optimized starting values of components in the proposed LNA design. The obtained NSGA-II parameters were simulated using Cadence Spectre- RF simulator. The designed Low Noise Amplifier achieves a power gain of 22 dB and a minimum Noise Figure of 3 dB is achieved. It dissipates 12.5 mW of power out of 1.8 V supply. KEYWORDS LNA, NSGA-II Algorithm, Noise Figure, Power Gain, return losses 1. INTRODUCTION Recent years have experienced explosive growth in the Radio Frequency /microwave semiconductor industry owing to the proliferation of a host of applications. Single-chip Bluetooth devices are already available and similar integration is likely to be achieved in cellular telephones and wireless networking in near future. Radio Frequency components are the basic building blocks of transceivers operating in GHz frequency range. Designing of RF circuit component needs lot of effort. After performing lengthy calculations and finding the parameter values it is not guaranteed that the circuit performs as expected. In Radio Frequency Integrated Circuits (RFIC), Low Noise Amplifiers are considered as black magic box because of their uncertain response with higher frequencies. Due to mismatch of input impedance and output impedance maximum power transformation is not possible. For Designing of the tank circuit, input and output impedance circuit, we need to design a passive filter with optimized component values. Optimization of the component value is a time consuming job. In view of this a CAD tool using Non-Dominated Sorting Genetic Algorithm (NSGA-II) has been employed. The design goal is formulated as an objective function. Some approximations and estimations on the design parameters are made in order to satisfy the requirement of the genetic algorithm. Many applications of genetic algorithm and optimization of LNA parameter by binary coded genetic algorithm is reported in [2, 3]. In this paper the design and optimization of single ended LNA using real coded genetic algorithm is presented. The rest of the paper is organized as: section-II gives brief introduction of Non-Dominated Sorting Genetic Algorithm. In section-III analysis and DOI : 10.5121/vlsic.2014.5505 59
  • 2. International Journal of VLSI design Communication Systems (VLSICS) Vol.5, No.5, October 2014 design problem of low noise amplifier is presented, in section-IV design objective and constrains optimization of LNA is mentioned. In section-V simulation result and discussion is presented. Scope and limitation of the NSGA-II has been discussed in section-VI and finally section-VII concludes the paper. 60 2. ELISTIST NON-DOMINATED SORTING GENETIC ALGORITHM (NSGA-II) Genetic algorithms [3, 4] are search techniques used in computing to find true or approximate solutions to search or optimization problems. It is based on the concepts of natural selection, reproduction and mutation and has been used extensively in optimization problems. It can be classified in two sets depending on type of coding of the members; one is binary coded and the second is real coded [3]. In the past few years GA has undergone lots of developments developing its features, processing time, etc., some such developments are Multi Objective Genetic Algorithm (MOGA) [5,6], Elitist Non Dominated Sorting Genetic Algorithm [3]. 3. ANALYSIS AND DESIGN OF LOW NOISE AMPLIFIER The early part of this section is based on the literature survey and concludes with own design. As one of the essential components, Low Noise Amplifiers (LNAs) for wireless applications have attracted significant research interest and various approaches to the design of narrow band LNAs (operating below 3 GHz) and wideband LNAs (operating above 3 GHz) have been proposed previously [7-15] and as shown in Fig. 1(a-d). Distributed amplifiers [7] can provide very large bandwidth because of their unique gain-bandwidth tradeoff. However, large power consumption and chip area make them unsuitable for typical low –power, low cost wireless applications. Figure 1. Various LNA Topologies (a) Distribute amplifier, (b) common gate, (c) inductive degeneration, (d) resistive feedback
  • 3. International Journal of VLSI design Communication Systems (VLSICS) Vol.5, No.5, October 2014 Common-gate amplifiers [8, 9] exhibit excellent wide band input matching, but suffer from a relatively large noise figure (NF). Narrow-band LNAs like an inductively degenerated common-source amplifier can also be converted into a wideband one by adding a wideband input matching network [10]. However, the insertion loss of the passive input matching degrades the NF rapidly with frequency. Resistive-feedback amplifiers [11, 12-14] have very good wideband input matching characteristics. However, low NF and low power consumption can be hardly achieved simultaneously across a large frequency range. In [15], the noise cancellation technique is used to relax this trade-off in resistive feedback amplifiers. 61 (a) (b) Figure 2. (a) Inductive source degeneration, (b) Small signal equivalent of 2(a) A typical LNA must fulfill several challenging requirements. The LNA must provide a good input matching over a band more than 500 MHz. A high gain is also preferred to amplify the weak signals at the receiver and to overcome the noise effects from the subsequent stages. In addition, the noise figure of the LNA must be low (typically 3 dB) since it plays a major role in defining the receiver's sensitivity. Moreover, the LNA also has to be power efficient and physically small to save power and reduce the cost, respectively. An inductively degenerated LNA configuration is proposed, as shown in Figure 2 (a). Inductive degeneration improves the linearity of the amplifier. The input impedance can be derived from the small signal analysis [16] of Figure 2 (b). By looking into the input side of Figure 2 (b), input impedance Zin can be: g 1 = ( + ) + + + Z s L L R ( ) in s g g L s m gs gs C sC (1) Where Ls, Lg are the source and gate inductances, respectively; Rg is the transistor gate resistance, Cgs is the transistor gate-to-source capacitance; gm is the transistor trans-conductance. The inductor parasitic resistance is ignored here. Input match requires that at the resonance frequency of the circuit, the impedance of the input stage is purely real and should be equal to 50 W. It follows that: m g + ( ) = 50 s g L gs C R (2) Where w0 is the resonance frequency (rad/s), and
  • 4. International Journal of VLSI design Communication Systems (VLSICS) Vol.5, No.5, October 2014 62 0 1 ( + ) + = 0 0 gs j L L s g j C w w (3) The noise factor (F) is defined as [7, 8]: g R R w g 0 2 1 ( ) T l g R m s s s R R F w a = + + + (4) 10 log ( ) 10 NF = × F Where unity frequency: , w = m gs g T C m g d 0 g a º , Rs : source resistance, Rl : series resistance of inductors, Rg : gate resistance, g: the thermal noise coefficient, w0 : the resonance frequency, gm: transistor trans-conductance. For a source inductively degenerated LNA in Fig.2, we could put a lower bound on the trans-conductance of the input transistor to ensure that the final designed LNA can provide a reasonable gain [9] − = = jw L 0 1 1 0 2 0 1 0 1 w L C jw L A G Z s V m eq (5) In order to formulate a geometric programming problem, we have to do some transformation and introduce a new variable to satisfy the requirement of geometric programming on the objective and constraints. Inequality constraints, and the objective function must be in the form of polynomial, equality constrains must be in the form of monomial. Here noise figure and gain are formulated for low noise amplifier. For low noise amplifiers, Objective function of Noise Figure can be formulated as: ( )2 min 50 0.02 n opt F = F + × R × − G (6) Where, 1 2 (1 ) 2 + × × × × − W C 5 0 = min Wt × F d g m G Rn × = a g × − g d a × = × × 5 (1 ) 2 0 C Gopt W Cgs The objective function of the Gain of LNA can be formulated as: × t load W R load W R Gain × × = 2 0 (7) And the objective function of power consumption has been formulated as: DC D DC P = I × V (8) Where, μ × C × Width × V 2 I n ox od ChannelLen gth = D 2 × In above equation, second order effects on drain current have been neglected to reduce the complexity of the program. As the schematic diagram of the LNA is depicted in Figure 3, an
  • 5. International Journal of VLSI design Communication Systems (VLSICS) Vol.5, No.5, October 2014 input impedance matching circuit is needed to match the source impedance to transistor input impedance. Objective function for Input impedance can be formulated from following equation. 63 s m g 1 = ( + ) + + + Z s L L R ( ) in s g g L gs gs C sC (9) Ls and Lg is used to tune the input impedance (Zin) to 50W at 3 GHz frequencies. Cgs and Rg Model the impedance looking into the gate of MOSFET. Here we can include pad capacitance and bond wire inductance also [10]. 4. DESIGN OBJECTIVES AND CONSTRAINT OPTIMIZATION FOR NSGA-II The simulations have been done for LNA with following constraints. Based on the technology parameters following have been defined as constant: = W = W = μ ( / 2 ) 8 .632 , ( ) 50 , ( ) 50 , Cox fF m Rs RL b g μ l W = = = = ( / nH ) 1, 2 .5, L ( m ) 0 .18 , 0 .5, = = 0 .47 , 1 .8 Vth V Vdd V Design constraints for the component of circuit were taken as follows: (1) 5 £ W1 £ 105μm (2) 0.1 £ Ls £ 50 nH (3) 0.1 £ Lg £ 50nH (4) 0.1 £ C £ 0.5 pF Simulations have been done with these parameters using NSGA-II. The NSGA parameters that were given are as follows: Mutation probability= 0.23671, Population size=100, Crossover Probability=0.99431, Number of generations=50. 5. SIMULATION RESULTS AND DISCUSSIONS 5.1. Simulation results using NSGA-II The above mentioned optimization technique is implemented for Low Noise Amplifier design to optimize gain and noise figure. Direct equations have been used for gain and noise figure which were calculated for cascode LNA with inductive source degeneration. Program structure for LNA optimization using NSGA-II is shown in Figure 3 below. The “func-con. h” header file has been modified and the fitness functions and constraint functions have been replaced with the equations as discussed in section 3. Also, “LNA_equations.h” file has been added, which actually evaluates all these equations. LNA Equations header file NSGA-II Optimization Core Input file handler Output file handler Figure 3. LNA Optimization Program Structure
  • 6. International Journal of VLSI design Communication Systems (VLSICS) Vol.5, No.5, October 2014 After NSGA-II optimizer generates output files, another program convert those into design parameters and we can plot those values using GNUPLOT software as plotted in Figure 4(a-f). The trans-conductance, gm, of the device is very much important to achieve good gain for LNA. However, this gm depends on the transistor width. Also, gm/ID ratio needs to be maintained to achieve a required LNA gain. Thus, the width of the transistor needs to be chosen to give enough gain and minimum noise figure. From Figure 4 (a), thus, ‘W’ is chosen to be 105 μm. The overdrive voltage is one of the important parameters for transistor operating point analysis. The transistor should operate in the desired operating region for maximum gain. Thus, plots in Figure 4 (b) are plotted using NSGA-II to guess the initial overdrive voltage required for the transistor to be in the desired operating region. The optimized value of food is chosen to be 0.35 V from Figure 4 (b) since at this overdrive voltage maximum gain with low noise figure can be achieved simultaneously. The role of a source degenerated inductor (Ls) here is to match the input impedance to 50 with low noise. From Figure 4 (c), it can be seen that the noise is increasing with Lsource .Thus the optimum value of source at a minimum noise figure is chosen to be 0.27 NH. 64 (a) (b)
  • 7. International Journal of VLSI design Communication Systems (VLSICS) Vol.5, No.5, October 2014 65 (c) (d) (e)
  • 8. International Journal of VLSI design Communication Systems (VLSICS) Vol.5, No.5, October 2014 66 (f) Figure 4. Simulation results using NSGA-II (a) Noise vs. Gain vs. Width of the transistor, (b) Noise vs. Gain vs. Overdrive voltage, (c) Noise vs. Lsource (d) Power dissipation vs. Lsource , (e) Gain vs. Lsource (f) Power vs. Noise vs. Gain The effect of variation of a source inductor in power consumption can be seen from Figure 4 (d), where it can be seen that with the increase in value of source degeneration inductor; power dissipation reduces. But, for RF design the inductor should not be bulky. There always exists a trade-off among power dissipation, gain and noise figure for a Low Noise Amplifier design. The same can be seen in Figure 4 (e). While, from Figure 4 (f), it can be seen that the gain reduces with the increase in value of the source degenerated inductance. Thus, Lsource = 0.2 nH has been chosen as further optimized value which gives the best compromise between gain and noise figure trade-off. 5.2. Simulation of LNA using Specter RF The initial start up values given after running NSGA-II algorithm has been used for the designing of CMOS Low Noise Amplifier for 0.18 μm technology. The design is finally simulated using the Cadence Specter design tool. Figure 5 shows the proposed current reused LNA design. The S-parameter analysis is performed to obtain the gain and noise figure parameters. Also parallel LC tank circuit at the output tunes to the resonating frequency of 4 GHz. Capacitors at the input and output are dc blocking capacitor. The source terminal inductor (Ls) needs to be properly design to have a 50 input matching. The dc blocking capacitors has been chosen to be of 103 fF each. While Lg is calculated from Eq. (13), once the optimum value of Ls is chosen to be 0.2 nH. Usually the value of a lead is picked up from the available literature as references and accordingly the parallel tuning capacitor needs to be tuned to operate at 4 GHz frequency. The value of bias resistor, Rbias, is chosen to be large to minimize the noise entering into the design.
  • 9. International Journal of VLSI design Communication Systems (VLSICS) Vol.5, No.5, October 2014 67 Figure 5. Proposed current reused two stage LNA 5.2.1. Parametric analysis The parametric analysis is used for automating the generation of multiple simulations to test the effect of a source degeneration inductor (Ls) variation on the small signal gain (S21). Ls is sweep from 50 pH to 200 pH as shown in Figure 6. It is observed that for 3-5 GHz band gain flatness is good for Ls as 200 pH, so, Ls is chosen to be 200 pH. Figure 6. Parametric Analysis for Small Signal Gain
  • 10. International Journal of VLSI design Communication Systems (VLSICS) Vol.5, No.5, October 2014 68 Figure 7. Overall S-parameter response of Single stage LNA 5.2.2. S-Parameter analysis The simulated S-parameter results are as shown in Figure 7. The simulated results show that the LNA has a maximum flat gain of + 22 dB from 3 to 5 GHz band. Also, Figure 8 shows a smith chart analysis plots for input impedance matching. From smith chart it can be seen that the real part of the impedance is matched to 47 . Thus minimum input and output return loss of -10 dB each can be observed for 3 to 5 GHz. The input and output return losses have to be further improved by proper matching. The LNA also attends a high reverse isolation (S12) of - 40 dB for 3 to 5 GHz. Figure 8. Input Impedance Matching using smith chart
  • 11. International Journal of VLSI design Communication Systems (VLSICS) Vol.5, No.5, October 2014 69 5.2.3. Stability analysis In the presence of feedback paths from the output to the input, the circuit might become unstable for certain combinations of source and load impedances. An LNA design that is normally stable might oscillate at the extremes of the manufacturing or voltage variations, and perhaps at unexpectedly high or low frequencies. The Stern stability factor characterizes circuit stability as in equation below: Kf= 1+|f |2 -|S11|2 -|S22|2 / 2|S21||S12| (10) Figure 9. Stability Analysis Where, f = S11S22-S21S12 , If Kf 1 and f 1, then the circuit is unconditionally stable. The stability evaluation for the S parameters over a wide frequency range has been done to ensure that the Kf remains greater than one for all frequencies. As the coupling (S12) decreases, that is as the reverse isolation increases, stability improves. One can use the techniques such as resistive loading and neutralization to improve stability for an LNA [11]. Stability analysis shows that Kf 1 and f 1 across the frequency band of interest, stating that designed LNA is un-conditionally stable as shown in Figure 9. 5.2.4 Linearity analysis Linearity is also important parameter for LNA design along with gain. The linearity limits the actual power that can be drawn to the load by the LNA. The linearity is simulated using periodic steady-state (PSS) analysis. Figure 7 shows the linearity analysis with P1dB compression point of -6.46719 dBm at 4 GHz.
  • 12. International Journal of VLSI design Communication Systems (VLSICS) Vol.5, No.5, October 2014 70 Figure 10. P1dB compression point 5.2.5. Noise analysis The overall noise figure (NF) and minimum noise figure (NFmin) of 2.31 dB and 2.1 dB respectively can be seen from Figure 11 for cascade common source with current re-use feedback. Table-1 shows the performance summary of the proposed low noise amplifier and its comparison with the previously reported LNA designs. At the time of designing parasitic play important role in obtained results but here we are not considering them because our first motivation is to take initial guess of the values. The design parameters obtained from multi objective genetic algorithm is comparable with the result obtained in Cadence Spectre tool. Figure 11. Noise Figure plots for two stage LNA
  • 13. International Journal of VLSI design Communication Systems (VLSICS) Vol.5, No.5, October 2014 71 Table 1 Comparison of Wideband LNAs: Published and the optimized LNA design parameters Proposed LNA designs Previously Reported LNA Designs Targeted parameters Optimized two stage LNA design with current re-used using NSGA-II [15][16] [17] [18] Technology 0.18μm CMOS 0.18μm CMOS 0.65 μm CMOS 0.18 μm CMOS 0.18 μm CMOS Frequency of Operation 3-5 GHz 3-5 GHz 0.2-5.2 GHz 1-5 GHz 3-5 GHz Supply Voltage 1.8 V 1.8 V 1.2 V 1.8 V 1.8 V Gain 20 dB 22 dB 13-15.6 dB 11-13.7 dB 8.6-9.5 dB S11 -10 dB -10 dB *** -10 dB -10.3 dB S22 -10 dB -10 dB *** *** -11.8 dB S12 -10 dB -40 dB *** *** *** NF 4 dB 3.5 dB 3.5 5-6.5 dB 2.7 dB NFmin 3 dB 3 dB *** *** *** P1dB -10 dBm -6.46719 *** *** *** Power 15 mW 12.5 mW *** 9 mW 15 mW Note: *** Not mentioned 6. SCOPE AND LIMITATION OF DESIGNED TOOL Designed optimization tool gives only approximate values of the design parameters. This tool is designed only for final stages of RFIC design process. Parasitic effects associated with passive on-chip components like capacitors, inductors and resistors have not been taken into account for shorter simulation time of the circuit. 7. CONCLUSION This paper shows that the optimization of RF Circuits is possible with real coded genetic algorithm. It is found that real coded Multi-Objective Genetic Algorithm has many advantages over binary coded genetic algorithm. Non-Dominated Sorting Genetic Algorithm is used for optimization tool, which is giving comparative results with design software simulation like Cadence Spectre tool. In this paper it is shown that the Low Noise Amplifier can be designed for the noise figure of 3.5 dB and power gain of 22 dB. The two stage LNA topology with current reused technique is designed and optimized for 3-5 GHz UWB applications. The simulated S11 and S22 parameters are well below – 10 dB is obtained with the simple matching network for the desired band of 3-5 GHz. The designed LNA dissipates 22 mW of power out of 1.8 V supply. Also the proposed LNA design is found to be unconditionally stable and operates linearly throughout the desired band. A comparison between the present results and the results of previously reported LNA shows that the reported LNA design reaches the state-of-the-art LNA designs for UWB application. In future; the NSGA-II optimization tool can be used to extend for 3.1-10.6 GHz LNA design for ultra-wide-band wireless RF system. Thus the design tool is useful in finding circuit element values quickly reducing the RF circuit designer time.
  • 14. International Journal of VLSI design Communication Systems (VLSICS) Vol.5, No.5, October 2014 72 REFERENCES [1] Federal communications commission (FCC), first order and report,”2002 [2] Min Chu, “Elitist Non dominated Sorting Genetic Algorithm Based RF IC Optimizer”, IEEE Transaction Vol. 52, No.3. [3] K. Deb.,“Multi-objective optimization using evolutionary algorithms”, Wiley,2003. Pg.-248- [4] D.E. Goldberg, “Genetic Algorithms in Search, Optimization, and Machine Learning”, Addison- Wesley Longman Publishing, Co., Inc. Boston, MA, USA. 1989. [5] N. Chaiyaratana, A. M .S. Zalzala, “Recent Development in Evolutionary and Genetic Algorithms: Theory and Applications,” no. 446, IEE, 1997. [6] Deb, K., “Single and Multi-Objective Optimization Using Evolutionary Algorithms”,Kan GAL Report No. 2004002, February, 2004. [7] B. M. Ballweber, R. Gupta, and D. J. Allstot, “A full integrated 0.5-5.5 GHz CMOS distributed amplifier”, IEEE Journal of Solid State Circuit, vol.35, no.2 pp.231-239, Feb. 2000. [8] C.F. Liao, S-I Liu, “A broad band noise cancelling CMOS LNA for 3.1-10.6 GHz wireless receivers”, IJSSCC, 42(2):329-339, Feb. 2007. [9] R. Gharpure, “A broadband low noise front end amplifier for ultra wideband in 0.13 μm CMOS”, IEEE Journal of Solid State Circuits, vol 40, no.9 pp.1983-1986, Sep.2005. [10] W. H. Chen, G. Liu, B. Zdravko, and A. M. Niknejad, “A highly linear broadband CMOS LNA employing noise and distortion cancellation”, in IEEE RFIC Symp. Dig.papers, pp.61-64, 2007 [11] A Bevilacqua and A.M. Niknejad, “An ultra wide band CMOS LNA for 3.1-10.6 GHz wireless receivers”, In ISSCC, Dig.Tech. Papers, pp. 382-533, 2004. [12] C. W. Kim, M. S. Kang, P. T. Anh, H. T. Kim, and S. G. Lee, “An ultra-wide band CMOS low noise amplifier for 3-5 GHz UWB System”, IEEE J. Solid State Circuits, vol. 40, no.2, pp.544- 547, Feb 2005. [13] R. Ramzan, S. Anderson, J. Dabrowski, and C. Svensson, “A 1.4V 25mW inductor less wideband LNA in 0.13μm CMOS”, in ISSCC Dig. Tech. papers, pp.424-425, 2007. [14] M. Vidojkovic, M. Sanduleanu, J. V. D. Tang, P. Baltus, and A.V. Roermund, “A 1.2V, inductorless, broadband LNA in 90 nm CMOS Low Power”,In IEEE RFIC Symp .Dig. Tech Papers, pp. 53-56, 2007. [15] F. Bruccoleri, E. A. M.Klumperink, and B. Nauta, “Noise Cancelling wideband CMOS LNAs”, in ISSCC Dig. Tech. papers, pp.406-407, 2002. [16] Ming ShenTian, Jan. H. Mikklensen, Olek Jensen Torben Larsen, “Design and Implementation of a 1- 5 GHz low noise amplifier in 0.18μm CMOS,” Analog Integrated Circuits and Signal Processing, pp.41-48, 2011 [17] Ji-Hai Duan, Xiao-ting Han, Sheng Li, “A Wideband CMOS LNA for 3-5GHz UWB Systems”, IEEE Conference, 2009. [18] Andrea Bevilacqua, Christoph Sandner, et.al.,“A Fully integrated Distributed CMOS LNA for 3- 5 GHz Ultra wideband wireless receivers”, IEEE Microwave and Wireless Components Letters,2006 AUTHORS Vishakha P. Bhale received B.E. (Electronics and Telecommunication) and M.E. (Digital Electronics) in 2002 and 2006 respectively. Presently she is pursuing Ph.D. in RF circuit designs for wireless communication application using VLSI design. Her area of interest is analogue RF circuit designs, Low power VLSI designs, Wireless communication system designs for portable applications. Dr. Upena Dalal received the B.E. in Electronics from SVRCET, Surat in 1991 and obtained M.E. (Electronics Communications) from DDIT, Nadiad with Gold Medal. Presently she is working as Associate Prof. in Electronics Engineering Department, Sardar Vallabhbhai National Institute of Technology (SV NIT), Surat,Gujrat, India. She ha s 20 years of academic experience. She has published 70+ conference and journal papers at national and international level. Her book on “Wireless Communication” is published by Oxford University Press in July 2009. One more book edited by her and Dr Y P Kosta titled “Wi-MAX New Developments” is published by Intech, Vienna, Austria. She has organized 8 National level training programs and two international conferences. She is a LM of several technical technical bodies.