SPICE MODEL of RN1966FS in SPICE PARK
0 likes192 views
The document is a device modeling report for a digital transistor (RN1966FS) manufactured by Toshiba Bee Technologies Inc. It includes detailed parameters, characteristics, and circuit simulation results for different operating conditions, showing comparison graphs of measurement and simulation results for collector current, voltage, and gain. The report also highlights various evaluation circuits and provides error percentages between measurements and simulations.
SPICE MODEL of RN1966FS in SPICE PARK
- 1. Device Modeling Report COMPONENTS: Digital transistor (BRT) PART NUMBER: RN1966FS MANUFACTURER: TOSHIBA Bee Technologies Inc. All Rights Reserved Copyright (C) Bee Technologies Inc. 2010 1
- 2. DIGITAL TRANSISTOR MODEL PSpice model Model description parameter IS Saturation Current BF Ideal Maximum Forward Beta NF Forward Current Emission Coefficient VAF Forward Early Voltage IKF Forward Beta Roll-off Knee Current ISE Non-ideal Base-Emitter Diode Saturation Current NE Non-ideal Base-Emitter Diode Emission Coefficient BR Ideal Maximum Reverse Beta NR Reverse Emission Coefficient VAR Reverse Early Voltage IKR Reverse Beta Roll-off Knee Current ISC Non-ideal Base-Collector Diode Saturation Current NC Non-ideal Base-Collector Diode Emission Coefficient NK Forward Beta Roll-off Slope Exponent RE Emitter Resistance RB Base Resistance RC Series Collector Resistance CJE Zero-bias Emitter-Base Junction Capacitance VJE Emitter-Base Junction Potential MJE Emitter-Base Junction Grading Coefficient CJC Zero-bias Collector-Base Junction Capacitance VJC Collector-base Junction Potential MJC Collector-base Junction Grading Coefficient FC Coefficient for Onset of Forward-bias Depletion Capacitance TF Forward Transit Time XTF Coefficient for TF Dependency on Vce VTF Voltage for TF Dependency on Vce ITF Current for TF Dependency on Ic PTF Excess Phase at f=1/2pi*TF TR Reverse Transit Time EG Activation Energy XTB Forward Beta Temperature Coefficient XTI Temperature Coefficient for IS All Rights Reserved Copyright (C) Bee Technologies Inc. 2010 2
- 3. IC-VI(ON) Characteristics Circuit simulation result 100mA 10mA 1.0mA 100uA 100mV 1.0V 10V 100V -I(V1) V_V2 Evaluation circuit Q2 Q1 U1 RN1966FS V1 0.2Vdc V2 0Vdc 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2010 3
- 4. Comparison Graph Circuit Simulation Result 100 Measurement Simulation COLLECTOR CURRENT : Ic (mA) 10 1 0.1 0.1 1 10 100 INPUT VOLTAGE : VI(ON) (V) Simulation Result Condition : VCE = 0.2 V VI(ON) (V) Ic(mA) Error (%) Measurement Simulation 0.1 0.645 0.639 -0.93 0.2 0.658 0.660 0.30 0.5 0.685 0.688 0.44 1 0.715 0.712 -0.42 2 0.740 0.739 -0.14 5 0.800 0.790 -1.25 10 0.870 0.858 -1.38 20 1.025 0.996 -2.83 All Rights Reserved Copyright (C) Bee Technologies Inc. 2010 4
- 5. IC-VI(OFF) Characteristics Circuit simulation result 10mA 1.0mA 100uA 10uA 0V 0.2V 0.4V 0.6V 0.8V 1.0V 1.2V 1.4V I(U1:4) V_V2 Evaluation circuit Q2 Q1 U1 RN1966FS V1 5Vdc V2 0Vdc 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2010 5
- 6. Comparison Graph Circuit Simulation Result 10000 Measurement Simulation COLLECTOR CURRENT : Ic (uA) 1000 100 10 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 INPUT VOLTAGE : VI(OFF) (V) Simulation Result Condition : VCC = 5 V VI(OFF) (V) Ic(uA) Error (%) Measurement Simulation 10 0.573 0.571 -0.35 20 0.591 0.591 -0.03 50 0.615 0.617 0.33 100 0.636 0.638 0.31 200 0.658 0.658 0.00 500 0.685 0.686 0.15 1000 0.705 0.709 0.57 2000 0.730 0.736 0.82 3000 0.745 0.755 1.34 All Rights Reserved Copyright (C) Bee Technologies Inc. 2010 6
- 7. hFE-IC Characteristics Circuit simulation result 1.0K 100 10 1.0mA 10mA 100mA I(V2)/ I_I1 I(V2) Evaluation circuit V2 0Vdc Q2 Q1 U1 RN1966FS VCE 5Vdc 0Adc I1 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2010 7
- 8. Comparison Graph Circuit Simulation Result 1000 Measurement Simulation DC CURRENT GAIN : hFE 100 10 1 10 100 COLLECTOR CURRENT : Ic (mA) Simulation Result Condition : VCC = 5 V hFE Ic(mA) Error (%) Measurement Simulation 1 65.000 65.015 0.02 2 115.000 117.318 2.02 5 222.500 228.577 2.73 10 315.000 324.390 2.98 20 375.000 379.801 1.28 30 380.000 379.056 -0.25 50 350.000 347.314 -0.77 All Rights Reserved Copyright (C) Bee Technologies Inc. 2010 8
- 9. VCE(Sat)-IC Characteristics Circuit simulation result 1.0V 100mV 10mV 1.0mA 10mA 100mA V(F1:2) I_I2 Evaluation circuit Q2 Q1 U1 RN1966FS F1 GAIN = 0.05 0Adc F I2 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2010 9
- 10. Comparison Graph Circuit Simulation Result 1000 Measurement Simulation COLLECTOR-EMITTER SATURATION VOLTAGE Vce (sat) (mV) 100 10 1 10 100 COLLECTOR CURRENT : Ic (mA) Simulation Result Condition : IC/IB=20 VCE(sat) (mV) Ic(mA) Error (%) Measurement Simulation 1 21.000 20.362 -3.04 2 19.950 20.029 0.40 3 21.000 21.195 0.93 5 23.750 24.066 1.33 10 31.000 31.269 0.87 20 44.500 44.664 0.37 50 82.000 81.367 -0.77 All Rights Reserved Copyright (C) Bee Technologies Inc. 2010 10