SPICE MODEL of S60SC6MT (Professional Model) in SPICE PARK
0 likes158 views
The document provides a detailed report on the device modeling of the S60SC6MT Schottky rectifier by Shindengen. It includes circuit configuration, SPICE model parameters, and simulation results for forward current characteristics, capacitance characteristics, and reverse characteristics. Additionally, it presents comparison graphs demonstrating simulation versus measurement data across various operating conditions.
SPICE MODEL of S60SC6MT (Professional Model) in SPICE PARK
- 1. Device Modeling Report COMPONENTS: DIODE/ SCHOTTKY RECTIFIER / PROFESSIONAL PART NUMBER: S60SC6MT MANUFACTURER: SHINDENGEN Bee Technologies Inc. All Rights Reserved Copyright (C) Bee Technologies Inc. 2010 1
- 2. Circuit Configuration U1 S60SC6MT 1 2 3 Spice Model Parameters PSpice model Model description parameter IS Saturation Current N Emission Coefficient RS Series Resistance IKF High-injection Knee Current CJO Zero-bias Junction Capacitance M Junction Grading Coefficient VJ Junction Potential ISR Recombination Current Saturation Value BV Reverse Breakdown Voltage(a positive value) IBV Reverse Breakdown Current(a positive value) TT Transit Time EG Energy-band Gap All Rights Reserved Copyright (C) Bee Technologies Inc. 2010 2
- 3. Forward Current Characteristic Circuit Simulation Result 100A 10A 1.0A 100mA 0V 0.5V 1.0V 1.5V 2.0V 2.5V I(R1) V_V1 Evaluation Circuit R1 0.01m V1 U1 0Vdc S60SC6MT R2 100MEG 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2010 3
- 4. Comparison Graph Circuit Simulation Result 100 FORWARD CURRENT:IF(A) 10 1 Measurement Simulation 0.1 0 0.5 1 1.5 2 2.5 FORWARD VOLTAGE：VF(V) Simulation Result Vfwd (V) Ifwd (A) %Error Measurement Simulation 0.1 0.2500 0.2485 -0.61 0.2 0.2700 0.2670 -1.11 0.5 0.2900 0.2929 1.01 1 0.3150 0.3145 -0.16 2 0.3400 0.3400 0.00 5 0.3900 0.3854 -1.18 10 0.4400 0.4398 -0.05 20 0.5350 0.5304 -0.86 50 0.7600 0.7722 1.60 100 1.1500 1.1536 0.31 200 1.9000 1.8984 -0.08 All Rights Reserved Copyright (C) Bee Technologies Inc. 2010 4
- 5. Capacitance Characteristic Circuit Simulation Result 10n 1.0n 100p 10p 100mV 1.0V 10V 60V I(V2)/(60V/100n) V(N16610) Evaluation Circuit V2 0Vdc R1 100MEG V2 = 60 V1 V1 = 0 U1 TD = 0 S60SC6MT TR = 100ns TF = 100ns PW = 100us PER = 500us 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2010 5
- 6. Comparison Graph Circuit Simulation Result 10000 Measurement Simulation JUNCTION CAPACITANCE 1000 Cj(pF) 100 10 0.1 1 10 REVERSE VOLTAGE:VR(V) Simulation Result Cj (pF) VR (V) %Error Measurement Simulation 0.1 3000.000 3086.700 2.89 0.2 2750.000 2804.600 1.99 0.5 2250.000 2279.200 1.30 1 1800.000 1822.100 1.23 2 1400.000 1383.300 -1.19 5 910.000 912.558 0.28 10 640.000 652.261 1.92 20 460.000 461.462 0.32 60 270.000 263.811 -2.29 All Rights Reserved Copyright (C) Bee Technologies Inc. 2010 6
- 7. Reverse Characteristic Circuit Simulation Result 10mA 1.0mA 100uA 10uA 1.0uA 0V 20V 40V 60V I(R1) V_V1 Evaluation Circuit R1 0.01m R2 100MEG V1 0Vdc U1 S60SC6MT 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2010 7
- 8. Comparison Graph Circuit Simulation Result 10 Measurement Simulation REVERSE CURRENT:IR(mA ) 1 0.1 0.01 0.001 0 10 20 30 40 50 60 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS Simulation Result IR(mA) VR(V) Error (%) Measurement Simulation 2 0.012 0.012 -2.60 10 0.024 0.025 4.20 20 0.035 0.034 -2.06 30 0.049 0.048 -1.94 40 0.080 0.078 -1.94 50 0.135 0.138 2.16 60 0.240 0.239 -0.47 All Rights Reserved Copyright (C) Bee Technologies Inc. 2010 8