SPICE MODEL of IDB10S60C (Professional Model) in SPICE PARK
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The document is a device modeling report for the Infineon IDB10S60C silicon carbide Schottky diode. It presents circuit configurations, parameter descriptions, and simulation results for forward and reverse current characteristics, as well as junction capacitance. Comparison tables detail measurement and simulation values with corresponding errors across different operational conditions.
SPICE MODEL of IDB10S60C (Professional Model) in SPICE PARK
- 1. Device Modeling Report COMPONENTS: Silicon Carbide Schottky Diode PART NUMBER: IDB10S60C MANUFACTURER: Infineon REMARK: Professional Model Bee Technologies Inc. All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 1
- 2. Circuit Configuration U1 IDB10S60C All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 2
- 3. DIODE MODEL PARAMETERS PSpice model Model description parameter IS Saturation Current N Emission Coefficient RS Series Resistance IKF High-injection Knee Current CJO Zero-bias Junction Capacitance M Junction Grading Coefficient VJ Junction Potential ISR Recombination Current Saturation Value BV Reverse Breakdown Voltage(a positive value) IBV Reverse Breakdown Current(a positive value) TT Transit Time EG Energy-band Gap All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 3
- 4. Forward Current Characteristics Circuit Simulation result 30A 20A 10A 0A 0V 1.0V 2.0V 3.0V 4.0V I(R1) V_V1 Evaluation circuit R1 0.01m V1 U1 IDB10S60C 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 4
- 5. Comparison Graph Circuit Simulation result Comparison table VF (V) IF (A) %Error Measurement Simulation 1 1.000 0.993 -0.70 2 1.053 1.065 1.15 5 1.230 1.239 0.72 10 1.500 1.490 -0.64 20 1.975 1.959 -0.82 30 2.435 2.413 -0.90 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 5
- 6. Reverse Current Characteristic Circuit Simulation result 100uA 10uA 1.0uA 100nA 10nA 1.0nA 100V 200V 300V 400V 500V 600V I(U1:K) V_V1 Evaluation circuit V2 0 V1 U1 IDB10S60C 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 6
- 7. Comparison Graph Circuit Simulation result Comparison table IR (A) VR (V) %Error Measurement Simulation 100 0.0020 0.0020 0.00 200 0.0055 0.0053 -3.64 400 0.1400 0.1430 2.14 600 5.5000 5.2381 -4.76 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 7
- 8. Junction Capacitance Characteristic Circuit Simulation result 600p 500p 400p 300p 200p 100p 0 100mV 1.0V 10V 100V 1.0KV I(V2)/(600V/1u) V(R) 600p Evaluation circuit 500p V2 R 400p 0 300p V1 = 0 V1 U1 V2 = 600 IDB10S60C TD = 0 200p TR = 1us TF = 100ns PW = 100us PER = 10m 100p 0 0 100mV 1.0V 10V 100V 1.0KV I(V2)/(600V/1u) V(R) All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 8
- 9. Comparison Graph Circuit Simulation result Comparison table C (pF) VR (V) %Error Measurement Simulation 0.5 516 523.477 1.45 1 466 475.345 2.01 2 415 408.956 -1.46 5 316 302.138 -4.39 10 241 229.910 -4.60 20 177 170.254 -3.81 50 116 119.043 2.62 100 91 95.455 4.90 200 77 80.434 4.46 500 66 68.925 4.43 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 9