SPICE MODEL of IDD10SG60C (Professional Model) in SPICE PARK
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This document details the modeling and simulation results of the IDD10SG60C silicon carbide Schottky diode manufactured by Infineon. It includes parameters for the diode model, characteristics of forward and reverse current, and junction capacitance characteristics, along with comparison tables highlighting measurement and simulation data. The document is copyrighted by Bee Technologies Inc. and contains various circuit configuration and simulation results for evaluating the diode performance.
SPICE MODEL of IDD10SG60C (Professional Model) in SPICE PARK
- 1. Device Modeling Report COMPONENTS: Silicon Carbide Schottky Diode PART NUMBER: IDD10SG60C MANUFACTURER: Infineon REMARK: Professional Model Bee Technologies Inc. All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 1
- 2. Circuit Configuration U1 IDD10SG60C All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 2
- 3. DIODE MODEL PARAMETERS PSpice model Model description parameter IS Saturation Current N Emission Coefficient RS Series Resistance IKF High-injection Knee Current CJO Zero-bias Junction Capacitance M Junction Grading Coefficient VJ Junction Potential ISR Recombination Current Saturation Value BV Reverse Breakdown Voltage(a positive value) IBV Reverse Breakdown Current(a positive value) TT Transit Time EG Energy-band Gap All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 3
- 4. Forward Current Characteristics Circuit Simulation result 20A 15A 10A 5A 0A 0V 1.0V 2.0V 3.0V 4.0V I(R1) V_V1 Evaluation circuit R1 0.01m V1 U1 IDD10SG60C 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 4
- 5. Comparison Graph Circuit Simulation result 20 Measurement Simulation 15 Forword Current, I F (A) 10 5 0 0 1 2 3 4 Forward Voltage, VF (V) Comparison table VF (V) IF (A) %Error Measurement Simulation 0.5 0.980 0.988 0.82 1 1.060 1.051 -0.85 2 1.158 1.158 0.00 5 1.450 1.449 -0.07 10 1.896 1.912 0.84 20 2.827 2.820 -0.25 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 5
- 6. Reverse Current Characteristic Circuit Simulation result 10uA 1.0uA 100nA 10nA 1.0nA 100pA 100V 200V 300V 400V 500V 600V I(U1:K) V_V1 Evaluation circuit V2 0 V1 U1 IDD10SG60C 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 6
- 7. Comparison Graph Circuit Simulation result Comparison table IR (A) VR (V) %Error Measurement Simulation 100 1.230E-03 1.230E-03 0.00 200 2.000E-03 1.950E-03 -2.50 500 1.150E-01 1.207E-01 4.96 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 7
- 8. Junction Capacitance Characteristic Circuit Simulation result 350p 300p 250p 200p 150p 100p 50p 0 100mV 1.0V 10V 100V 1.0KV I(V2)/(600V/1u) V(R) Evaluation circuit V2 R 0 V1 = 0 V1 U1 V2 = 600 IDD10SG60C TD = 0 TR = 1us TF = 100ns PW = 100us PER = 10m 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 8
- 9. Comparison Graph Circuit Simulation result 350 Measurement Simulation 300 250 Capacitance, C (pF) 200 150 100 50 0 0.1 1 10 100 1000 Reverse Voltage, VR (V) Comparison table C (pF) VR (V) %Error Measurement Simulation 0.5 288.095 288.970 0.30 1 260.952 264.110 1.21 2 226.190 227.972 0.79 5 173.333 169.028 -2.48 10 132.333 127.046 -4.00 20 99.000 94.316 -4.73 50 67.619 66.685 -1.38 100 52.200 54.712 4.81 200 46.238 47.620 2.99 500 42.857 42.556 -0.70 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 9