SPICE MODEL of IDT03S60C (Professional Model) in SPICE PARK
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The document is a device modeling report for the IDT03S60C silicon carbide Schottky diode from Infineon. It includes circuit configurations, detailed diode model parameters, and simulation results for forward and reverse current characteristics as well as junction capacitance. Additionally, it provides comparison tables to show measurement versus simulation results, highlighting the performance accuracy of the diode model.
SPICE MODEL of IDT03S60C (Professional Model) in SPICE PARK
- 1. Device Modeling Report COMPONENTS: Silicon Carbide Schottky Diode PART NUMBER: IDT03S60C MANUFACTURER: Infineon REMARK: Professional Model Bee Technologies Inc. All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 1
- 2. Circuit Configuration U1 IDT03S60C All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 2
- 3. DIODE MODEL PARAMETERS PSpice model Model description parameter IS Saturation Current N Emission Coefficient RS Series Resistance IKF High-injection Knee Current CJO Zero-bias Junction Capacitance M Junction Grading Coefficient VJ Junction Potential ISR Recombination Current Saturation Value BV Reverse Breakdown Voltage(a positive value) IBV Reverse Breakdown Current(a positive value) TT Transit Time EG Energy-band Gap All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 3
- 4. Forward Current Characteristics Circuit Simulation result 6.0A 4.0A 2.0A 0A 0V 1.0V 2.0V 3.0V 4.0V I(R1) V_V1 Evaluation circuit R1 0.01m V1 U1 IDT03S60C 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 4
- 5. Comparison Graph Circuit Simulation result 6 Measurement Simulation Forword Current, IF (A) 4 2 0 0 1 2 3 4 Forward Voltage, VF (V) Comparison table VF (V) IF (A) %Error Measurement Simulation 0.1 0.970 0.963 -0.77 0.2 1.000 1.000 0.00 0.5 1.100 1.102 0.18 1 1.240 1.240 0.00 2 1.500 1.500 0.00 5 2.250 2.250 0.00 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 5
- 6. Reverse Current Characteristic Circuit Simulation result 10uA 1.0uA 100nA 10nA 1.0nA 100V 200V 400V 600V I(U1:K) V_V1 Evaluation circuit V2 0 U1 V1 IDT03S60C 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 6
- 7. Comparison Graph Circuit Simulation result 1.E+01 Measurement Simulation Reverse Current, IR (A) 1.E+00 1.E-01 1.E-02 1.E-03 100 200 300 400 500 600 Reverse Voltage , VR (V) Comparison table IR (A) VR (V) %Error Measurement Simulation 100 2.00E-03 2.063E-03 3.15 200 4.00E-03 3.819E-03 -4.53 500 8.60E-02 8.428E-02 -2.00 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 7
- 8. Junction Capacitance Characteristic Circuit Simulation result 100p 75p 50p 25p 0 1.0V 10V 100V 1.0KV I(V2)/(600V/1u) V(R) Evaluation circuit V2 R 0 V1 = 0 V1 U1 V2 = 600 IDT03S60C TD = 0 TR = 1us TF = 100ns PW = 100us PER = 10m 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 8
- 9. Comparison Graph Circuit Simulation result 100 Measurement Simulation 75 Capacitance, C (pF) 50 25 0 1 10 100 1000 Reverse Voltage, VR (V) Comparison table C (pF) VR (V) %Error Measurement Simulation 1 90.278 89.943 -0.37 2 78.472 78.900 0.55 5 61.000 61.619 1.01 10 47.222 47.102 -0.25 20 35.800 35.582 -0.61 50 24.500 24.301 -0.81 100 18.056 18.391 1.86 200 13.700 14.234 3.90 500 11.152 10.596 -4.99 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 9