SPICE MODEL of IDT05S60C (Professional Model) in SPICE PARK
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The document provides a detailed modeling report for a silicon carbide Schottky diode (part number IDT05S60C) manufactured by Infineon, including simulations of forward and reverse current characteristics, junction capacitance, and various parameters such as saturation current and breakdown voltage. It presents comparative graphs and tables to highlight measurement versus simulation results, indicating the percent error in various conditions. All content is copyright protected by Bee Technologies Inc., 2011.
SPICE MODEL of IDT05S60C (Professional Model) in SPICE PARK
- 1. Device Modeling Report COMPONENTS: Silicon Carbide Schottky Diode PART NUMBER: IDT05S60C MANUFACTURER: Infineon REMARK: Professional Model Bee Technologies Inc. All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 1
- 2. Circuit Configuration U1 IDT05S60C All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 2
- 3. DIODE MODEL PARAMETERS PSpice model Model description parameter IS Saturation Current N Emission Coefficient RS Series Resistance IKF High-injection Knee Current CJO Zero-bias Junction Capacitance M Junction Grading Coefficient VJ Junction Potential ISR Recombination Current Saturation Value BV Reverse Breakdown Voltage(a positive value) IBV Reverse Breakdown Current(a positive value) TT Transit Time EG Energy-band Gap All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 3
- 4. Forward Current Characteristics Circuit Simulation result 15A 10A 5A 0A 0V 1.0V 2.0V 3.0V 4.0V I(R1) V_V1 Evaluation circuit R1 0.01m V1 U1 IDT05S60C 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 4
- 5. Comparison Graph Circuit Simulation result 15 Measurement Simulation Forword Current, I F (A) 10 5 0 0 1 2 3 4 Forward Voltage, VF (V) Comparison table VF (V) IF (A) %Error Measurement Simulation 0.5 1.000 1.002 0.20 1 1.057 1.067 0.95 2 1.180 1.179 -0.08 5 1.490 1.484 -0.40 10 1.975 1.971 -0.20 15 2.443 2.450 0.29 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 5
- 6. Reverse Current Characteristic Circuit Simulation result 100uA 10uA 1.0uA 100nA 10nA 1.0nA 100V 200V 300V 400V 500V 600V I(U1:K) V_V1 Evaluation circuit V2 0 V1 U1 IDT05S60C 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 6
- 7. Comparison Graph Circuit Simulation result 100 Measurement Simulation 10 Reverse Current, IR (A) 1 0.1 0.01 0.001 100 200 300 400 500 600 Reverse Voltage , VR (V) Comparison table IR (A) VR (V) %Error Measurement Simulation 100 1.700E-03 1.695E-03 -0.29 200 3.250E-03 3.324E-03 2.28 500 3.800E-01 3.976E-01 4.63 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 7
- 8. Junction Capacitance Characteristic Circuit Simulation result 300p 250p 200p 150p 100p 50p 0 100mV 1.0V 10V 100V 1.0KV I(V2)/(600V/1u) V(R) Evaluation circuit V2 R 0 V1 = 0 V1 U1 V2 = 600 IDT05S60C TD = 0 TR = 1us TF = 100ns PW = 100us PER = 10m 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 8
- 9. Comparison Graph Circuit Simulation result 300 Measurement Simulation 250 Capacitance, C (pF) 200 150 100 50 0 0.1 1 10 100 1000 Reverse Voltage, VR (V) Comparison table C (pF) VR (V) %Error Measurement Simulation 0.5 264.167 263.801 -0.14 1 237.500 239.373 0.79 2 204.167 205.274 0.54 5 154.167 152.429 -1.13 10 118.000 115.815 -1.85 20 88.000 86.634 -1.55 50 60.417 59.829 -0.97 100 44.583 46.750 4.86 200 37.083 37.952 2.34 500 32.143 30.729 -4.40 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 9