SPICE MODEL of IDT02S60C (Professional Model) in SPICE PARK
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This document presents a device modeling report for the silicon carbide Schottky diode IDT02S60C by Infineon, detailing circuit configurations and parameters. It includes simulation results for forward current, reverse current, and junction capacitance, alongside comparison tables and graphs illustrating measurement versus simulation data. The report emphasizes accuracy in measurements with accompanying error percentages for various voltage and current values.
SPICE MODEL of IDT02S60C (Professional Model) in SPICE PARK
- 1. Device Modeling Report COMPONENTS: Silicon Carbide Schottky Diode PART NUMBER: IDT02S60C MANUFACTURER: Infineon REMARK: Professional Model Bee Technologies Inc. All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 1
- 2. Circuit Configuration U1 IDT02S60C All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 2
- 3. DIODE MODEL PARAMETERS PSpice model Model description parameter IS Saturation Current N Emission Coefficient RS Series Resistance IKF High-injection Knee Current CJO Zero-bias Junction Capacitance M Junction Grading Coefficient VJ Junction Potential ISR Recombination Current Saturation Value BV Reverse Breakdown Voltage(a positive value) IBV Reverse Breakdown Current(a positive value) TT Transit Time EG Energy-band Gap All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 3
- 4. Forward Current Characteristics Circuit Simulation result 3.0A 2.0A 1.0A 0A 0V 1.0V 2.0V 3.0V 4.0V I(R1) V_V1 Evaluation circuit R1 0.01m V1 U1 IDT02S60C 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 4
- 5. Comparison Graph Circuit Simulation result 3 Measurement Simulation Forword Current, IF (A) 2 1 0 0 1 2 3 4 Forward Voltage, VF (V) Comparison table VF (V) IF (A) %Error Measurement Simulation 0.1 1.000 0.975 -2.50 0.2 1.040 1.028 -1.15 0.5 1.160 1.160 0.00 1 1.355 1.358 0.22 2 1.730 1.735 0.29 3 2.100 2.106 0.29 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 5
- 6. Reverse Current Characteristic Circuit Simulation result 10uA 1.0uA 100nA 10nA 1.0nA 100pA 100V 200V 300V 400V 500V 600V I(U1:K) V_V1 Evaluation circuit V2 0 V1 U1 IDT02S60C 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 6
- 7. Comparison Graph Circuit Simulation result 1.E+01 Measurement Simulation 1.E+00 Reverse Current, IR (A) 1.E-01 1.E-02 1.E-03 1.E-04 100 200 300 400 500 600 Reverse Voltage , VR (V) Comparison table IR (A) VR (V) %Error Measurement Simulation 100 1.300E-03 1.316E-03 1.23 200 2.700E-03 2.730E-03 1.11 500 5.830E-02 6.100E-02 4.63 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 7
- 8. Junction Capacitance Characteristic Circuit Simulation result 60p 55p 50p 45p 40p 35p 30p 25p 20p 15p 10p 5p 0 1.0V 10V 100V 1.0KV I(V2)/(600V/1u) V(R) Evaluation circuit V2 R 0 V1 = 0 V1 U1 V2 = 600 IDT02S60C TD = 0 TR = 1us TF = 100ns PW = 100us PER = 10m 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 8
- 9. Comparison Graph Circuit Simulation result 60 Measurement Simulation 45 Capacitance, C (pF) 30 15 0 1 10 100 1000 Reverse Voltage, VR (V) Comparison table C (pF) VR (V) %Error Measurement Simulation 1 59.500 58.389 -1.87 2 52.000 52.339 0.65 5 41.000 41.132 0.32 10 32.000 31.890 -0.34 20 24.000 23.731 -1.12 50 16.250 15.928 -1.98 100 12.400 12.143 -2.07 200 9.400 9.682 3.00 500 8.000 7.753 -3.09 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 9