SPICE MODEL of IDB06S60C (Professional Model) in SPICE PARK
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The document is a modeling report for the Infineon silicon carbide Schottky diode (IDB06S60C), detailing circuit configurations, diode model parameters, and simulation results for forward and reverse current characteristics. It includes comparative data on forward voltage, reverse current, and junction capacitance with corresponding measurement errors. The report is published by Bee Technologies Inc. and contains various graphs and tables to illustrate the simulation results.
SPICE MODEL of IDB06S60C (Professional Model) in SPICE PARK
- 1. Device Modeling Report COMPONENTS: Silicon Carbide Schottky Diode PART NUMBER: IDB06S60C MANUFACTURER: Infineon REMARK: Professional Model Bee Technologies Inc. All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 1
- 2. Circuit Configuration U1 IDB06S60C All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 2
- 3. DIODE MODEL PARAMETERS PSpice model Model description parameter IS Saturation Current N Emission Coefficient RS Series Resistance IKF High-injection Knee Current CJO Zero-bias Junction Capacitance M Junction Grading Coefficient VJ Junction Potential ISR Recombination Current Saturation Value BV Reverse Breakdown Voltage(a positive value) IBV Reverse Breakdown Current(a positive value) TT Transit Time EG Energy-band Gap All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 3
- 4. Forward Current Characteristics Circuit Simulation result 10A 8A 6A 4A 2A 0A 0V 1.0V 2.0V 3.0V 4.0V I(R1) V_V1 Evaluation circuit R1 0.01m V1 U1 IDB06S60C 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 4
- 5. Comparison Graph Circuit Simulation result Comparison table VF (V) IF (A) %Error Measurement Simulation 0.5 0.929 0.974 4.84 1 1.000 1.031 3.10 2 1.133 1.127 -0.53 5 1.400 1.386 -1.00 10 1.800 1.796 -0.22 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 5
- 6. Reverse Current Characteristic Circuit Simulation result 10uA 1.0uA 100nA 10nA 1.0nA 100V 200V 300V 400V 500V 600V I(U1:K) V_V1 Evaluation circuit V2 0 V1 U1 IDB06S60C 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 6
- 7. Comparison Graph Circuit Simulation result Comparison table IR (A) VR (V) %Error Measurement Simulation 100 1.200E-03 1.166E-03 -2.83 200 5.000E-03 5.134E-03 2.68 400 1.020E-01 1.061E-01 3.97 600 2.300E+00 2.260E+00 -1.76 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 7
- 8. Junction Capacitance Characteristic Circuit Simulation result 400p 300p 200p 100p 0 100mV 1.0V 10V 100V 1.0KV I(V2)/(600V/1u) V(R) Evaluation circuit V2 R 0 V1 = 0 V1 U1 V2 = 600 IDB06S60C TD = 0 TR = 1us TF = 100ns PW = 100us PER = 10m 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 8
- 9. Comparison Graph Circuit Simulation result Comparison table C (pF) VR (V) %Error Measurement Simulation 0.5 294 295.505 0.51 1 267 268.126 0.42 2 230 231.492 0.65 5 175 173.193 -1.03 10 133 132.062 -0.71 20 102 99.194 -2.75 50 68 69.129 1.66 100 52 54.527 4.86 200 43 44.800 4.19 500 38 36.862 -2.99 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 9