SPICE MODEL of IDV06S60C (Professional Model) in SPICE PARK
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The document is a device modeling report for a silicon carbide Schottky diode (part number: IDV06S60C) manufactured by Infineon. It includes detailed simulation results for forward current characteristics, junction capacitance, and reverse characteristics, comparing measurements with simulation outcomes and error percentages. All information is copyrighted by Bee Technologies Inc. in 2010.
SPICE MODEL of IDV06S60C (Professional Model) in SPICE PARK
- 1. Device Modeling Report COMPONENTS: Silicon Carbide Schottky Diode PART NUMBER: IDV06S60C MANUFACTURER: Infineon REMARK: Professional Model Bee Technologies Inc. All Rights Reserved Copyright (C) Bee Technologies Inc. 2010
- 2. PSpice model Model description parameter IS Saturation Current N Emission Coefficient RS Series Resistance IKF High-injection Knee Current CJO Zero-bias Junction Capacitance M Junction Grading Coefficient VJ Junction Potential ISR Recombination Current Saturation Value BV Reverse Breakdown Voltage(a positive value) IBV Reverse Breakdown Current(a positive value) TT Transit Time EG Energy-band Gap All Rights Reserved Copyright (C) Bee Technologies Inc. 2010
- 3. Forward Current Characteristic Circuit Simulation Result 20A 18A 16A 14A 12A 10A 8A 6A 4A 2A 0A 0V 1.0V 2.0V 3.0V 4.0V I(R1) V_V1 Evaluation Circuit R1 0.01m V1 U1 0Vdc IDV06S60C 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2010
- 4. Comparison Graph Circuit Simulation Result 20 Measurement 18 Simulation 16 FORWARD CURRENT: IF(A) 14 12 10 8 6 4 2 0 0 1 2 3 4 FORWARD VOLTAGE: VF(V) Simulation Result VF(V) IF(A) Error (%) Measurement Simulation 1 0.980 0.986 0.58 2 1.100 1.098 -0.15 5 1.380 1.376 -0.26 10 1.800 1.797 -0.18 15 2.200 2.198 -0.07 20 2.600 2.601 0.05 All Rights Reserved Copyright (C) Bee Technologies Inc. 2010
- 5. Junction Capacitance Characteristic Circuit Simulation Result 350p 300p 250p 200p 150p 100p 50p 0 100mV 1.0V 10V 100V 1.0KV I(V2)/(600V/1u) V(N16610) Evaluation Circuit V2 0Vdc V2 = 600 V1 U1 V1 = 0 IDV06S60C TD = 0 TR = 1us TF = 500ns PW = 100us PER = 500us 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2010
- 6. Comparison Graph Circuit Simulation Result 350 Measurement Simulation 300 250 CAPACITANCE: C(pF) 200 150 100 50 0 0.1 1 10 100 1000 REVERSE VOLTAGE:VR(V) Simulation Result C (pF) VR(V) Error (%) Measurement Simulation 0.1 327.000 328.885 0.58 0.2 319.000 320.359 0.43 0.5 297.000 298.227 0.41 1 268.000 269.864 0.70 2 230.000 231.672 0.73 5 173.220 174.678 0.84 10 134.000 135.225 0.91 20 102.000 102.879 0.86 50 71.733 71.982 0.35 100 56.000 55.860 -0.25 200 42.500 44.464 4.62 600 36.250 34.461 -4.94 All Rights Reserved Copyright (C) Bee Technologies Inc. 2010
- 7. Reverse Characteristic Circuit Simulation Result 10uA 1.0uA 100nA 10nA 1.0nA 100V 200V 300V 400V 500V 600V I(R1) V_V1 Evaluation Circuit R1 100m V1 U1 0Vdc IDV06S60C 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2010
- 8. Comparison Graph Circuit Simulation Result 1.E-05 Measurement Simulation REVERSE CURRENT:IR(A) 1.E-06 1.E-07 1.E-08 1.E-09 100 200 300 400 500 600 REVERSE VOLTAGE：VR(V) Simulation Result IR(A) VR(V) Error (%) Measurement Simulation 100 1.600E-09 1.600E-09 0.00 200 4.500E-09 4.488E-09 -0.28 300 1.880E-08 1.884E-08 0.23 400 9.300E-08 9.361E-08 0.66 500 4.850E-07 4.866E-07 0.32 600 2.550E-06 2.555E-06 0.20 All Rights Reserved Copyright (C) Bee Technologies Inc. 2010