SPICE MODEL of IDD03SG60C (Professional Model) in SPICE PARK
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The document provides a device modeling report for a silicon carbide Schottky diode with part number IDD03SG60C. It includes the diode model parameters, simulation results for forward and reverse current characteristics, and junction capacitance. The simulation results show good agreement with manufacturer measurement data, with most comparisons within 5% error.
SPICE MODEL of IDD03SG60C (Professional Model) in SPICE PARK
- 1. Device Modeling Report COMPONENTS: Silicon Carbide Schottky Diode PART NUMBER: IDD03SG60C MANUFACTURER: Infineon REMARK: Professional Model Bee Technologies Inc. All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 1
- 2. Circuit Configuration U1 IDD03SG60C All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 2
- 3. DIODE MODEL PARAMETERS PSpice model Model description parameter IS Saturation Current N Emission Coefficient RS Series Resistance IKF High-injection Knee Current CJO Zero-bias Junction Capacitance M Junction Grading Coefficient VJ Junction Potential ISR Recombination Current Saturation Value BV Reverse Breakdown Voltage(a positive value) IBV Reverse Breakdown Current(a positive value) TT Transit Time EG Energy-band Gap All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 3
- 4. Forward Current Characteristics Circuit Simulation result 3.0A 2.0A 1.0A 0A 0V 1.0V 2.0V 3.0V 4.0V I(R1) V_V1 Evaluation circuit R1 0.01m V1 U1 IDD03SG60C 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 4
- 5. Comparison Graph Circuit Simulation result Comparison table VF (V) IF (A) %Error Measurement Simulation 0.1 0.953 0.966 1.26 0.2 1.037 1.020 -1.64 0.5 1.156 1.151 -0.42 1 1.344 1.348 0.28 2 1.714 1.724 0.62 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 5
- 6. Reverse Current Characteristic Circuit Simulation result 10uA 1.0uA 100nA 10nA 1.0nA 100pA 100V 200V 300V 400V 500V 600V I(U1:K) V_V1 Evaluation circuit V2 R 0 V1 = 0 V1 U1 V2 = 600 IDD03SG60C TD = 0 TR = 1us TF = 100ns PW = 100us PER = 10m 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 6
- 7. Comparison Graph Circuit Simulation result Comparison table IR (A) VR (V) %Error Measurement Simulation 100 1.300E-09 1.328E-09 2.15 200 2.520E-09 2.422E-09 -3.89 400 1.800E-08 1.824E-08 1.31 600 2.100E-07 2.092E-07 -0.37 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 7
- 8. Junction Capacitance Characteristic Circuit Simulation result 70p 60p 50p 40p 30p 20p 10p 0 100mV 1.0V 10V 100V 1.0KV I(V2)/(600V/1u) V(R) Evaluation circuit V2 R 0 V1 = 0 V1 U1 V2 = 600 IDD03SG60C TD = 0 TR = 1us TF = 100ns PW = 100us PER = 10m 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 8
- 9. Comparison Graph Circuit Simulation result Comparison table C (pF) VR (V) %Error Measurement Simulation 0.5 65.579 65.221 -0.55 1 60.000 60.385 0.64 2 52.241 52.235 -0.01 5 41.053 40.437 -1.50 10 32.000 30.714 -4.02 20 23.789 22.668 -4.71 50 16.316 15.502 -4.99 100 12.526 12.262 -2.11 200 9.789 10.266 4.87 500 8.421 8.801 4.51 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 9