SPICE MODEL of C4D10120E (Professional Model) in SPICE PARK
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The document provides a detailed device modeling report for the C4D10120E silicon carbide Schottky diode from Cree, including circuit configuration and simulation results. It outlines key parameters such as forward current characteristics, reverse current characteristics, and junction capacitance measurements, along with comparison tables detailing measurement versus simulation errors. All simulations are copyright protected by Bee Technologies Inc. and contain comprehensive data across various conditions.
SPICE MODEL of C4D10120E (Professional Model) in SPICE PARK
- 1. Device Modeling Report COMPONENTS: SILICON CARBIDE SCHOTTKY DIODE PART NUMBER: C4D10120E MANUFACTURER: CREE REMARK: PROFESSIONAL MODEL Bee Technologies Inc. All Rights Reserved Copyright (C) Bee Technologies Inc. 2012 1
- 2. Circuit Configuration U2 C4D10120E DIODE MODEL PARAMETERS PSpice model Model description parameter IS Saturation Current N Emission Coefficient RS Series Resistance IKF High-injection Knee Current CJO Zero-bias Junction Capacitance M Junction Grading Coefficient VJ Junction Potential ISR Recombination Current Saturation Value BV Reverse Breakdown Voltage(a positive value) IBV Reverse Breakdown Current(a positive value) TT Transit Time EG Energy-band Gap All Rights Reserved Copyright (C) Bee Technologies Inc. 2012 2
- 3. Forward Current Characteristics Circuit Simulation result 20A 18A 16A 14A 12A 10A 8A 6A 4A 2A 0A 0V 0.5V 1.0V 1.5V 2.0V 2.5V 3.0V 3.5V 4.0V I(R1) V_V1 Evaluation circuit R1 0.01m V1 U1 C4D10120E 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2012 3
- 4. Comparison Graph Circuit Simulation result Comparison table VF (V) IF (A) %Error Measurement Simulation 0.2 0.853 0.864 1.29 0.5 0.906 0.905 -0.11 1 0.959 0.952 -0.73 2 1.044 1.029 -1.44 5 1.226 1.229 0.24 10 1.538 1.539 0.07 20 2.148 2.143 -0.23 All Rights Reserved Copyright (C) Bee Technologies Inc. 2012 4
- 5. Reverse Current Characteristic Circuit Simulation result 5.0mA 4.0mA 3.0mA 2.0mA 1.0mA 0A 0V 0.5KV 1.0KV 1.5KV 2.0KV I(R1) V_V1 Evaluation circuit R1 0.01m V1 U1 C4D10120E 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2012 5
- 6. Comparison Graph Circuit Simulation result Comparison table IR (A) VR (V) %Error Measurement Simulation 1500 55.900 55.388 -0.92 1550 86.350 89.926 4.14 1600 142.000 146.042 2.85 1650 243.600 237.219 -2.62 1700 377.600 385.148 2.00 1728 516.000 505.293 -2.08 1730 5000.000 5000.000 0.00 All Rights Reserved Copyright (C) Bee Technologies Inc. 2012 6
- 7. Junction Capacitance Characteristic Circuit Simulation result 800p 700p 600p 500p 400p 300p 200p 100p 0 100mV 1.0V 10V 100V 1.0KV I(V2)/(1000V/10u) V(R) Evaluation circuit V2 R 0 U1 V1 = 0 V1 C4D10120E V2 = 1000 TD = 0 TR = 10us TF = 100ns PW = 100us PER = 10m 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2012 7
- 8. Comparison Graph Circuit Simulation result Comparison table C (pF) VR (V) %Error Measurement Simulation 0.1 751.800 753.017 0.16 0.2 721.800 725.047 0.45 0.5 656.250 657.779 0.23 1 577.500 575.619 -0.33 2 484.050 480.455 -0.74 5 353.850 353.966 0.03 10 267.750 267.501 -0.09 20 200.000 198.477 -0.76 50 136.500 132.830 -2.69 100 94.300 96.850 2.70 200 68.150 70.590 3.58 500 47.250 46.390 -1.82 1000 34.750 33.660 -3.14 All Rights Reserved Copyright (C) Bee Technologies Inc. 2012 8