SPICE MODEL of C4D08120E (Professional Model) in SPICE PARK
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This document contains a device modeling report for the C4D08120E silicon carbide Schottky diode, detailing its circuit configuration, model parameters, and performance characteristics. It includes simulation results for forward current, reverse current, and junction capacitance, along with comparison tables showing measurement and simulation values. The report is authored by Bee Technologies Inc. and is copyright protected.
SPICE MODEL of C4D08120E (Professional Model) in SPICE PARK
- 1. Device Modeling Report COMPONENTS: SILICON CARBIDE SCHOTTKY DIODE PART NUMBER: C4D08120E MANUFACTURER: CREE REMARK: PROFESSIONAL MODEL Bee Technologies Inc. All Rights Reserved Copyright (C) Bee Technologies Inc. 2012 1
- 2. Circuit Configuration U2 C4D08120E DIODE MODEL PARAMETERS PSpice model Model description parameter IS Saturation Current N Emission Coefficient RS Series Resistance IKF High-injection Knee Current CJO Zero-bias Junction Capacitance M Junction Grading Coefficient VJ Junction Potential ISR Recombination Current Saturation Value BV Reverse Breakdown Voltage(a positive value) IBV Reverse Breakdown Current(a positive value) TT Transit Time EG Energy-band Gap All Rights Reserved Copyright (C) Bee Technologies Inc. 2012 2
- 3. Forward Current Characteristics Circuit Simulation result 15A 14A 13A 12A 11A 10A 9A 8A 7A 6A 5A 4A 3A 2A 1A 0A 0V 0.5V 1.0V 1.5V 2.0V 2.5V 3.0V 3.5V 4.0V I(R1) V_V1 Evaluation circuit R1 0.01m V1 U1 C4D08120E 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2012 3
- 4. Comparison Graph Circuit Simulation result Comparison table VF (V) IF (A) %Error Measurement Simulation 0.1 0.820 0.850 3.66 0.2 0.887 0.878 -1.01 0.5 0.942 0.933 -0.96 1 1.000 1.002 0.20 2 1.143 1.124 -1.63 5 1.459 1.458 -0.07 10 1.989 1.994 0.25 15 2.523 2.522 -0.04 All Rights Reserved Copyright (C) Bee Technologies Inc. 2012 4
- 5. Reverse Current Characteristic Circuit Simulation result 500uA 450uA 400uA 350uA 300uA 250uA 200uA 150uA 100uA 50uA 0A 0V 0.2KV 0.4KV 0.6KV 0.8KV 1.0KV 1.2KV 1.4KV 1.6KV 1.8KV I(R1) V_V1 Evaluation circuit R1 0.01m V1 U1 C4D08120E 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2012 5
- 6. Comparison Graph Circuit Simulation result Comparison table IR (A) VR (V) %Error Measurement Simulation 1200 6.500 6.502 0.03 1300 15.500 15.461 -0.25 1400 37.800 36.812 -2.61 1500 85.000 87.880 3.39 1580 180.000 176.124 -2.15 All Rights Reserved Copyright (C) Bee Technologies Inc. 2012 6
- 7. Junction Capacitance Characteristic Circuit Simulation result 600p 500p 400p 300p 200p 100p 0 100mV 1.0V 10V 100V 1.0KV I(V2)/(1000V/10u) V(R) Evaluation circuit V2 R 0 U1 V1 = 0 V1 C4D08120E V2 = 1000 TD = 0 TR = 10us TF = 100ns PW = 100us PER = 10m 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2012 7
- 8. Comparison Graph Circuit Simulation result Comparison table C (pF) VR (V) %Error Measurement Simulation 0.1 536.000 539.095 0.58 0.2 520.000 522.465 0.47 0.5 480.000 480.637 0.13 1 430.400 429.081 -0.31 2 368.000 362.904 -1.38 5 260.000 266.756 2.60 10 201.400 201.953 0.27 20 146.400 148.780 1.63 50 100.000 97.346 -2.65 100 72.000 70.050 -2.71 200 52.000 50.140 -3.58 500 32.000 32.220 0.69 1000 23.200 23.070 -0.56 All Rights Reserved Copyright (C) Bee Technologies Inc. 2012 8