SPICE MODEL of SDT04S60 (Professional Model) in SPICE PARK
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The document provides a detailed modeling report for the silicon carbide Schottky diode (part number: SDT04S60) manufactured by Infineon, including circuit configurations and parameters for simulation. It includes forward and reverse current characteristics, junction capacitance measurements, and comparison tables showing the accuracy of simulation results against measurements. The report outlines important parameters such as saturation current, reverse breakdown voltage, and junction capacitance across various voltage levels.
SPICE MODEL of SDT04S60 (Professional Model) in SPICE PARK
- 1. Device Modeling Report COMPONENTS: Silicon Carbide Schottky Diode PART NUMBER: SDT04S60 MANUFACTURER: Infineon REMARK: Professional Model Bee Technologies Inc. All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 1
- 2. Circuit Configuration U1 SDT04S60 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 2
- 3. DIODE MODEL PARAMETERS PSpice model Model description parameter IS Saturation Current N Emission Coefficient RS Series Resistance IKF High-injection Knee Current CJO Zero-bias Junction Capacitance M Junction Grading Coefficient VJ Junction Potential ISR Recombination Current Saturation Value BV Reverse Breakdown Voltage(a positive value) IBV Reverse Breakdown Current(a positive value) TT Transit Time EG Energy-band Gap All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 3
- 4. Forward Current Characteristics Circuit Simulation result 8.0A 7.0A 6.0A 5.0A 4.0A 3.0A 2.0A 1.0A 0A 0V 0.5V 1.0V 1.5V 2.0V 2.5V 3.0V 3.5V I(R1) V_V1 Evaluation circuit R1 0.01m V1 U1 SDT04S60 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 4
- 5. Comparison Graph Circuit Simulation result 6 Measurement Simulation 5 Forword Current, I F (A) 4 3 2 1 0 0 0.5 1 1.5 2 2.5 3 3.5 Forward Voltage, VF (V) Comparison table VF (V) IF (A) %Error Measurement Simulation 0.1 0.955 0.958 0.31 0.2 1.000 0.993 -0.70 0.5 1.080 1.066 -1.30 1 1.184 1.165 -1.60 2 1.370 1.347 -1.68 5 1.850 1.861 0.59 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 5
- 6. Reverse Current Characteristic Circuit Simulation result 100uA 10uA 1.0uA 100nA 10nA 1.0nA 100V 200V 300V 400V 500V 600V I(U1:K) V_V1 Evaluation circuit V2 0 V1 U1 SDT04S60 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 6
- 7. Comparison Graph Circuit Simulation result Measurement Simulation 10 Reverse Current, IR (A) 1 0.1 0.01 0.001 100 200 300 400 500 600 Reverse Voltage , VR (V) Comparison table IR (A) VR (V) %Error Measurement Simulation 100 2.000E-03 1.953E-03 -2.35 200 1.000E-02 1.036E-02 3.60 400 4.700E-01 4.518E-01 -3.87 600 2.000E+01 2.090E+01 4.50 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 7
- 8. Junction Capacitance Characteristic Circuit Simulation result 125p 100p 75p 50p 25p 0 1.0V 10V 100V 1.0KV I(V2)/(600V/1u) V(R) Evaluation circuit V2 R 0 V1 = 0 V1 U1 V2 = 600 SDT04S60 TD = 0 TR = 1us TF = 100ns PW = 100us PER = 10m 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 8
- 9. Comparison Graph Circuit Simulation result 125 Measurement Simulation 100 Capacitance, C (pF) 75 50 25 0 1 10 100 1000 Reverse Voltage, VR (V) Comparison table C (pF) VR (V) %Error Measurement Simulation 1 108.000 108.571 0.53 2 91.000 91.215 0.24 5 67.000 66.129 -1.30 10 49.000 48.939 -0.12 20 34.000 35.161 3.41 50 21.500 22.113 2.85 100 15.100 15.432 2.20 200 11.200 10.722 -4.27 500 6.900 6.600 -4.35 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 9