SPICE MODEL of IDH04S60C (Professional Model) in SPICE PARK
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The document is a device modeling report for the Infineon silicon carbide Schottky diode, part number IDH04S60C. It includes circuit configuration details, diode model parameters, and simulation results for forward current, reverse current, and junction capacitance characteristics, along with comparison graphs and error analysis between measurements and simulations. All content is copyrighted by Bee Technologies Inc.
SPICE MODEL of IDH04S60C (Professional Model) in SPICE PARK
- 1. Device Modeling Report COMPONENTS: Silicon Carbide Schottky Diode PART NUMBER: IDH04S60C MANUFACTURER: Infineon REMARK: Professional Model Bee Technologies Inc. All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 1
- 2. Circuit Configuration U1 IDH04S60C All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 2
- 3. DIODE MODEL PARAMETERS PSpice model Model description parameter IS Saturation Current N Emission Coefficient RS Series Resistance IKF High-injection Knee Current CJO Zero-bias Junction Capacitance M Junction Grading Coefficient VJ Junction Potential ISR Recombination Current Saturation Value BV Reverse Breakdown Voltage(a positive value) IBV Reverse Breakdown Current(a positive value) TT Transit Time EG Energy-band Gap All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 3
- 4. Forward Current Characteristics Circuit Simulation result 8.0A 7.0A 6.0A 5.0A 4.0A 3.0A 2.0A 1.0A 0A 0V 1.0V 2.0V 3.0V 4.0V I(R1) V_V1 Evaluation circuit R1 0.01m V1 U1 IDH04S60C 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 4
- 5. Comparison Graph Circuit Simulation result 8 Measurement 7 Simulation 6 Forword Current, IF (A) 5 4 3 2 1 0 0 1 2 3 4 Forward Voltage, VF (V) Comparison table VF (V) IF (A) %Error Measurement Simulation 0.1 0.9500 0.950 -0.02 0.5 1.0500 1.063 1.28 1 1.1800 1.171 -0.73 2 1.3800 1.369 -0.77 5 1.9250 1.933 0.43 8 2.4980 2.486 -0.50 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 5
- 6. Reverse Current Characteristic Circuit Simulation result 10uA 1.0uA 100nA 10nA 1.0nA 100pA 100V 200V 300V 400V 500V 600V I(R1) V_V1 Evaluation circuit R1 10m V1 U1 IDH04S60C 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 6
- 7. Comparison Graph Circuit Simulation result 10 Measurement Simulation 1 Reverse Current, IR (A) 0.1 0.01 0.001 0.0001 100 200 300 400 500 600 Reverse Voltage , VR (V) Comparison table IR (A) VR (V) %Error Measurement Simulation 100 0.00070 0.00073 4.75 200 0.00124 0.00120 -3.09 400 0.01300 0.01363 4.81 600 0.48000 0.46489 -3.15 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 7
- 8. Junction Capacitance Characteristic Circuit Simulation result 200p 175p 150p 125p 100p 75p 50p 25p 0 100mV 1.0V 10V 100V 1.0KV I(V2)/(600V/1u) V(R) Evaluation circuit V2 R 0 V1 = 0 V1 U1 V2 = 600 IDH04S60C TD = 0 TR = 1us TF = 100ns PW = 100us PER = 10m 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 8
- 9. Comparison Graph Circuit Simulation result 200 Measurement 175 Simulation 150 Capacitance, C (pF) 125 100 75 50 25 0 0.1 1 10 100 1000 Reverse Voltage, VR (V) Comparison table C (pF) VR (V) %Error Measurement Simulation 0.1 168.056 169.741 1.00 0.5 152.000 152.855 0.56 1 136.112 137.781 1.23 5 91.667 90.121 -1.69 10 69.445 70.478 1.49 50 36.200 37.103 2.49 100 28.000 27.826 -0.62 500 14.550 14.123 -2.93 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 9