SPICE MODEL of IDT10S60C (Professional Model) in SPICE PARK
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The document presents a device modeling report for the IDT10S60C silicon carbide Schottky diode, detailing its circuit configuration and PSpice model parameters, including saturation current, series resistance, and reverse breakdown voltage. It includes simulation results for forward and reverse current characteristics, along with comparison graphs and tables indicating measurement versus simulation data and associated errors. The document is published by Bee Technologies Inc., with copyright reserved.
SPICE MODEL of IDT10S60C (Professional Model) in SPICE PARK
- 1. Device Modeling Report COMPONENTS: Silicon Carbide Schottky Diode PART NUMBER: IDT10S60C MANUFACTURER: Infineon REMARK: Professional Model Bee Technologies Inc. All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 1
- 2. Circuit Configuration U1 IDT10S60C All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 2
- 3. DIODE MODEL PARAMETERS PSpice model Model description parameter IS Saturation Current N Emission Coefficient RS Series Resistance IKF High-injection Knee Current CJO Zero-bias Junction Capacitance M Junction Grading Coefficient VJ Junction Potential ISR Recombination Current Saturation Value BV Reverse Breakdown Voltage(a positive value) IBV Reverse Breakdown Current(a positive value) TT Transit Time EG Energy-band Gap All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 3
- 4. Forward Current Characteristics Circuit Simulation result 30A 20A 10A 0A 0V 1.0V 2.0V 3.0V 4.0V I(R1) V_V1 Evaluation circuit R1 0.01m V1 U1 IDT10S60C 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 4
- 5. Comparison Graph Circuit Simulation result 30 Measurement Simulation Forword Current, IF (A) 20 10 0 0 1 2 3 4 Forward Voltage, VF (V) Comparison table VF (V) IF (A) %Error Measurement Simulation 0.5 0.936 0.942 0.63 1 0.979 0.983 0.48 2 1.034 1.049 1.47 5 1.221 1.216 -0.48 10 1.500 1.472 -1.89 20 1.993 1.966 -1.36 30 2.443 2.453 0.40 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 5
- 6. Reverse Current Characteristic Circuit Simulation result 100uA 10uA 1.0uA 100nA 10nA 1.0nA 100V 200V 300V 400V 500V 600V I(U1:K) V_V1 Evaluation circuit V2 0 V1 U1 IDT10S60C 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 6
- 7. Comparison Graph Circuit Simulation result 100 Measurement Simulation 10 Reverse Current, IR (A) 1 0.1 0.01 0.001 100 200 300 400 500 600 Reverse Voltage , VR (V) Comparison table IR (A) VR (V) %Error Measurement Simulation 100 2.000E-03 2.024E-03 1.18 200 5.800E-03 5.640E-03 -2.76 500 7.400E-01 7.528E-01 1.73 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 7
- 8. Junction Capacitance Characteristic Circuit Simulation result 600p 500p 400p 300p 200p 100p 0 100mV 1.0V 10V 100V 1.0KV I(V2)/(600V/1u) V(R) Evaluation circuit V2 R 0 V1 = 0 V1 U1 V2 = 600 IDT10S60C TD = 0 TR = 1us TF = 100ns PW = 100us PER = 10m 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 8
- 9. Comparison Graph Circuit Simulation result 600 Measurement Simulation 500 Capacitance, C (pF) 400 300 200 100 0 0.1 1 10 100 1000 Reverse Voltage, VR (V) Comparison table C (pF) VR (V) %Error Measurement Simulation 0.5 529.167 536.370 1.36 1 479.167 490.676 2.40 2 415.500 425.393 2.38 5 316.667 317.658 0.31 10 244.167 239.598 -1.87 20 183.330 177.700 -3.07 50 122.500 120.871 -1.33 100 91.667 93.852 2.38 200 72.833 76.366 4.85 500 65.500 62.492 -4.59 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 9