The document discusses phase change memory (PCM) as a potential storage class memory technology. PCM uses the different resistances of amorphous and crystalline phases of chalcogenide glass to store data. PCM has the potential to bridge the gap between memory and storage by offering non-volatile, solid-state storage that is faster than NAND flash but slower than DRAM. The document analyzes how PCM could impact database systems by replacing DRAM, serving as extended memory paired with DRAM, or replacing hard drives and SSDs. Asymmetric read/write speeds and wear-leveling are challenges to address when using PCM.