SUSS MicroTec, Advanced Mask Aligner Lithography - AMALITH
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The document discusses the advancements in mask aligner lithography, specifically SUSS Microtec's MO Exposure Optics, which enhances photolithography processes through self-calibration and customized illumination. It highlights the evolution of lithography tools and presents comparisons demonstrating the efficiency and improvements in light uniformity and resolution. Additionally, it covers the market share of various exposure tools in the LED manufacturing context and the benefits of using optical proximity correction techniques.
![LITHOGRAPHY IN 1980
Min. Feature Size
[Half-Pitch]
Year Micron
1957 120
1963 30
1971 10
1974 6
1976 3
1982 1.5
1985 1.3
1989 1
SUSS MicroTec, Advanced Mask Aligner Lithography (AMALITH)3](https://image.slidesharecdn.com/sussmicrotecadvancedmaskalignerlithography2010-100826020608-phpapp01/85/SUSS-MicroTec-Advanced-Mask-Aligner-Lithography-AMALITH-3-320.jpg)
![HISTORIC LITHO TOOL PRICE [US$]
Mask Aligner
Front-End Litho Tool
EUVL
ASML 1950i
Every 4 years the price doubled
[1970 – 2010]
SUSS MicroTec, Advanced Mask Aligner Lithography (AMALITH)4](https://image.slidesharecdn.com/sussmicrotecadvancedmaskalignerlithography2010-100826020608-phpapp01/85/SUSS-MicroTec-Advanced-Mask-Aligner-Lithography-AMALITH-4-320.jpg)
![ Excellent light uniformity
No lamp misalignment
No uniformity change due to degradation of
lamp electrode during lifetime cycle
BETTER UNIFORMITY – INDEPENDENT OF LAMP POSITION
Deviation from mean value in [%] for Ø200mm in
MA200 Compact
SUSS MicroTec, Advanced Mask Aligner Lithography (AMALITH)17](https://image.slidesharecdn.com/sussmicrotecadvancedmaskalignerlithography2010-100826020608-phpapp01/85/SUSS-MicroTec-Advanced-Mask-Aligner-Lithography-AMALITH-17-320.jpg)
SUSS MicroTec, Advanced Mask Aligner Lithography - AMALITH
- 1. ADVANCED MASK ALIGNER LITHOGRAPHY (AMALITH) Photolithography Enhancement for SUSS Mask Aligners SÜSS MicroTec AG, www.suss.com SUSS MicroOptics SA, www.suss.ch, info@suss.ch
- 2. 1969: MJB3 1985: MA150 2013: LithoPack Gen2 Mask Aligners are the loyal work horse in research and industry since more than 50 years! SUSS MASK ALIGNERS 1963 - 2013 SUSS MicroTec, Advanced Mask Aligner Lithography (AMALITH)2
- 3. LITHOGRAPHY IN 1980 Min. Feature Size [Half-Pitch] Year Micron 1957 120 1963 30 1971 10 1974 6 1976 3 1982 1.5 1985 1.3 1989 1 SUSS MicroTec, Advanced Mask Aligner Lithography (AMALITH)3
- 4. HISTORIC LITHO TOOL PRICE [US$] Mask Aligner Front-End Litho Tool EUVL ASML 1950i Every 4 years the price doubled [1970 – 2010] SUSS MicroTec, Advanced Mask Aligner Lithography (AMALITH)4
- 5. LITHOGRAPHY FOR LED MANUFACTURING Market Share LED Exposure Tools SUSS Mask Aligner ASML Stepper Beta Square used Perkin Elmer DNK Aligner Nikon Used Stepper Ultratech Stepper Ushio full-field EVG Mask Aligner ELS Aligner China 102 23 3 128 80% 18% 2% Europe 6 1 1 8 75% 13% 13% Japan 22 22 100% Korea 14 9 25 1 2 51 27% 18% 49% 2% 4% Malaysia 4 1 5 80% 20% Singapore 20 20 100% Taiwan 23 75 23 14 9 144 16% 52% 16% 10% 6% USA 11 11 100% Worldwide 182 20 2 107 48 14 1 6 9 389 Source: www.yole.fr SUSS MicroTec, Advanced Mask Aligner Lithography (AMALITH)5
- 6. „Shadow Printing“ Lithography Mask illumination using collimated UV light Resolution proximity gap MASK ALIGNER LITHOGRAPHY Wafer Mask SUSS MicroTec, Advanced Mask Aligner Lithography (AMALITH)6
- 7. Diffraction effects Proximity artifacts Sidelobes SHADOW PRINTING LITHOGRAPHY Parallel Light (sidelobes) Apodization Parallel Light Diffuse Light SUSS MicroTec, Advanced Mask Aligner Lithography (AMALITH)7
- 8. Customized Illumination Reduce diffraction effects (apodization) Optical Proximity Correction (OPC) Improve critical resist structures Source Mask Optimization (SMO) Customized Illumination and OPC Alternating Aperture Phase Shift Mask (AAPSM) ... PHOTOLITHOGRAPHY ENHANCEMENT IN FRONT-END-OF-LINE WAFER STEPPERS www.asml.com www.zeiss.com SUSS MicroTec, Advanced Mask Aligner Lithography (AMALITH)8
- 9. MO EXPOSURE OPTICS® The new Illumination System for all SUSS Mask Aligners
- 10. Lamp readjustment required Uniformity change over lamp lifetime Daily uniformity test required Variation of illumination light over mask (angular spectrum) CONVENTIONAL MASK ALIGNER ILLUMINATION Forgot to control light uniformity this morning. SUSS MicroTec, Advanced Mask Aligner Lithography (AMALITH)10
- 11. KEY COMPONENTS: MICROLENS OPTICAL INTEGRATORS Microlens Optical Integrator Flat-Top IlluminationLight Source SUSS MicroTec, Advanced Mask Aligner Lithography (AMALITH)11
- 12. 2x Microlens Integrators in the Mask Aligner illumination system Light homogenization in both Fourier planes Self calibrating light source Illumination filter plate (IFP) MO EXPOSURE OPTICS® SUSS MicroTec, Advanced Mask Aligner Lithography (AMALITH)12 MO Exposure Optics in SUSS MA8 Gen3 Mask Aligner Quick Plug & Play installation and IFP illumination filter exchange
- 13. MO EXPOSURE OPTICS® SELF CALIBRATING MASK ALIGNER ILLUMINATION Microlens Optical Integrators Lamp readjustment required Uniformity change over lamp lifetime Daily uniformity test required Variation of illumination light over mask (angular spectrum) NO NO NO NO SUSS MicroTec, Advanced Mask Aligner Lithography (AMALITH)13
- 14. MO EXPOSURE OPTICS® : QUICK INSTALLATION Quick Installation in Mask AlignerMicrolens Optical Integrators SUSS MicroTec, Advanced Mask Aligner Lithography (AMALITH)14
- 15. Conventional Mask Aligner Illumination Optics (HR or LGO) Daily light measurement (9 or 12 points) 5 min x 365 day ~ 30 hours per year 12x lamp exchange per year 30 min x 10 ~ 6 hours per year 36 hours less productive time & labor costs per year MO Exposure Optics Self-calibrating light source No periodic uniformity and no lamp adjustment required No lamp adjustment, no issues with light uniformity SELF CALIBRATING LIGHT SOURCE Forgot to control light uniformity this morning. SUSS MicroTec, Advanced Mask Aligner Lithography (AMALITH) MO Exposure Optics installed! 15
- 16. MO Exposure Optics® No uniformity measurements No lamp alignment Improved uniformity Telecentric illumination CD uniformity improvement = Yield! Process stability assurance = Yield! Convenience! SELF CALIBRATING LIGHT SOURCE – SAFES TIME & MONEY SUSS MicroTec, Advanced Mask Aligner Lithography (AMALITH)16 Forgot to control light uniformity this morning. MO Exposure Optics installed!
- 17. Excellent light uniformity No lamp misalignment No uniformity change due to degradation of lamp electrode during lifetime cycle BETTER UNIFORMITY – INDEPENDENT OF LAMP POSITION Deviation from mean value in [%] for Ø200mm in MA200 Compact SUSS MicroTec, Advanced Mask Aligner Lithography (AMALITH)17
- 18. TELECENTRIC MASK ILLUMINATION Uniform angular spectrum of mask illumination light over full mask area Better resist sidewalls Improved CD uniformity SUSS MicroTec, Advanced Mask Aligner Lithography (AMALITH)18
- 19. ILLUMINATION FILTER PLATES (IFP) IFP HR Pupil Fill Ratio (PFR) 130% IFP " More Light" SUSS MicroTec, Advanced Mask Aligner Lithography (AMALITH)19
- 20. CONTACT OR PROXIMITY LITHOGRAPHY? Changeover from HR-Optics to LGO-Optics in less than 5 minutes! IFP-HR „High Resolution“ IFP-LGO „Large Gap“ SUSS MicroTec, Advanced Mask Aligner Lithography (AMALITH)20
- 21. COMPARISION: RESOLUTION FOR 100µM PROXIMITY GAP Comparision of HR, LGO and MO Exposure Optics in MA6 Coating AZ 4110, Thickness = 1.2µm Exposure MA6 (1KW lamp house), Proximity Gap 100µm Developing Manual Developed. AZ400K (1:4 DI), 60sec Lines 7µm Lines 6µm Lines 7µm Lines 6µm Lines 7µm Lines 6µm SUSS High-Resolution Optics (HR) SUSS Large Gap Optics (LGO) SUSS MO Exposure Optics IFP Circle 20 SUSS MicroTec, Advanced Mask Aligner Lithography (AMALITH)21
- 22. COMPARISION: RESOLUTION FOR 300µM PROXIMITY GAP Lines 20µm Lines 10µm Lines 20µm Lines 10µm Lines 20µm Lines 10µm Comparision of HR, LGO and MO Exposure Optics in MA6 Coating AZ 4110, Thickness = 1.2µm Exposure MA6 (1KW lamp house), Proximity Gap 100µm Developing Manual Developed. AZ400K (1:4 DI), 60sec SUSS High-Resolution Optics (HR) SUSS Large Gap Optics (LGO) SUSS MO Exposure Optics IFP Circle 20 SUSS MicroTec, Advanced Mask Aligner Lithography (AMALITH)22
- 23. SHADOW PRINTING: PINHOLE CAMERA Graph: Lorenz Stürzebecher, FhG-IOF Pinhole Camera Camera Obscura SUSS MicroTec, Advanced Mask Aligner Lithography (AMALITH)23
- 24. SHADOW PRINTING: PINHOLE CAMERA! Graph: Lorenz Stürzebecher, FhG-IOF Pinhole Camera Camera Obscura Light source (Object) Image of the light source in resist SUSS MicroTec, Advanced Mask Aligner Lithography (AMALITH)24
- 25. ADVANCED MASK ALIGNER LITHOGRAPHY (AMALITH) Pushing the limits!
- 26. OPTICAL PROXIMITY CORRECTION (OPC) CHANGING THE PINHOLE Square10µm x 10µm, Proximity Gap 50µm, Photoresist AZ4110, 1.2um thick SUSS MicroTec, Advanced Mask Aligner Lithography (AMALITH)26
- 27. Light Source • Self-Calibrating • Customized Illumination Photomask • Binary • OPC Exposure • Exposure Time • Proximity Gap Photoresist • Negative/Positive • Chemical Enhanced ProcessResistExposureMaskSource Wet Process • Developer • Prebake/Postbake SUSS MicroTec, Advanced Mask Aligner Lithography (AMALITH)27
- 28. Light Source • Self-Calibrating • Customized Illumination Photomask • Binary • OPC Exposure • Exposure Time • Proximity Gap Photoresist • Negative/Positive • Chemical Enhanced ProcessResistExposureMaskSource Wet Process • Developer • Prebake/Postbake Simulation Holistic Litho • Simulation of Lithography Process Chain SUSS MicroTec, Advanced Mask Aligner Lithography (AMALITH)28
- 29. PROCEDURE Iterative simulations of different OPC mask layers Export of the aerial image for the different simulated settings Matlab data elaboration LayoutLAB resist (calibrated) simulation for the resulting best profiles LITHOGRAPHY SIMULATION: OPC DESIGN Mask Layouts LayoutLAB FLOW Results SUSS MicroTec, Advanced Mask Aligner Lithography (AMALITH)29
- 30. Optimization of the mask pattern (Optical Proximity Correction, OPC) LITHOGRAPHY SIMULATION: OPC DESIGN Mask Layout Mask Layout with OPC features Resist Profile Resist Profile LayoutLAB™ software from GenISys Fraunhofer IISB SUSS MicroTec, Advanced Mask Aligner Lithography (AMALITH)30
- 31. SOURCE MASK OPTIZATION SUSS MicroTec, Advanced Mask Aligner Lithography (AMALITH)31
- 32. ITERATIVE OPTIMIZATION: LOOP FUNCTION SUSS MicroTec, Advanced Mask Aligner Lithography (AMALITH)32
- 33. Simulation enables significant process improvements Customer purchased five MA200 Compact Mask Aligners equipped with MO Exposure Optics® INDUSTRY EXAMPLE: REDUCTION OF PROXIMITY ARTIFACTS BY SMO Proximity artifacts in redistribution lanes: Deformations in lane edges. Simulation LayoutLAB software Corrected: 30µm Exp Gap, SB 90°C, 300sec, 650mJ in MA200 Compact with MO Exposure Optics Fillet reduces erosion Source Mask Optimization (SMO) Proximity artifact: Deformation (protrusion) due to diffraction effects (simulation in LayoutLAB) SUSS MicroTec, Advanced Mask Aligner Lithography (AMALITH)33
- 34. Aspect Ratio is the ratio of the width of a shape to its height. HIGH ASPECT RATIO Photomask Wafer Photoresist Gap Height Width SUSS MicroTec, Advanced Mask Aligner Lithography (AMALITH)34
- 35. MASK ALIGNER LITHOGRAPHY AirGap 0 µm 15 µm 30 µm 100 µm 0 µm 15 µm 30 µm 100 µm 10µm 10µm4µm10µm SUSS MicroTec, Advanced Mask Aligner Lithography (AMALITH)35
- 36. STRUCTURES AND GEOTMETRIES FOR LITHOGRAPHY bars with different width rectangles with different shape crossed bars in near contact different corner structures three bars neighboring contact holes seven bars contact hole near to a bar single bar contact hole SUSS MicroTec, Advanced Mask Aligner Lithography (AMALITH)36
- 37. SINGLE LINE, 5UM WIDTH IN 5UM THICK AZ9260 RESIST SUSS MicroTec, Advanced Mask Aligner Lithography (AMALITH)37
- 38. 2D AERIAL IMAGE CROSS SECTION 100 µm 0 µm GAP Broad Band illumination (g-, h- & i-line) ±3.5° 0.8° < < 1.6° 100 µm 0 µm GAPSUSS MicroTec, Advanced Mask Aligner Lithography (AMALITH)38
- 39. SIMULATION – EXPERIMENT: KNIFE EDGE AT 100UM GAP ±0.7° circular illumination Broad band illumination Gap: 100µm Resist: AZ9260, 10 µm thick Light distribution in the resist Resist after development Developed Not Developed 83.3° 71.3° Dose 200Dose 400 Assit Feature: Frensel Zone Plate Sub Resolution Assist Features (SRAF) based on analytic approach Increase the sidewall steepness SUSS MicroTec, Advanced Mask Aligner Lithography (AMALITH)39
- 40. 2D AERIAL IMAGE CROSS SECTION Broad Band Illumination (g-, h- & i-line) 100 µm 0 µm GAP 10µm 4µm ±3.5° 10µm 4µm 0.8° < < 1.6°±3.5° 0.8° < < 1.6° SUSS MicroTec, Advanced Mask Aligner Lithography (AMALITH)40
- 41. FRESNEL ZONE PLATE (FZP): HIGH ASPECT RATIO VIAS MOEO ±0.7° circular illumination Gap: 30µm Resist: AZ9260, 10 µm thick 3µm Broad band illumination, dose 0.3 i-line illumination, dose 0.1 1.8µm 20 µm 40 µm GAP Light 17µm AERIAL IMAGE Conventional mask (3µm opening) TSV Mask Resist after development Developed Not Developed SUSS MicroTec, Advanced Mask Aligner Lithography (AMALITH)41
- 42. EXAMPLE: PACKAGING, TSV & 3DIC Resulting Aerial Image Illumination Filter Plates (IFP) Depth of focus (DOF) DOF OPC Structure (Fresnel-type) 11µm via at 800 µm proximity gap TopviewSideviewSUSS MicroTec, Advanced Mask Aligner Lithography (AMALITH)42
- 43. EXAMPLE: PACKAGING, TSV & 3D IC Benefits Very large proximity gap Via shaping possible Extended Depth of Focus (DOF) Very short exposure time (focussing) Gap Ø Via DOF 100 µm 2 µm 5 µm 200 µm 3 µm 15 µm 300 µm 5 µm 30 µm 400 µm 7 µm 60 µm 500 µm 10 µm 100 µm 700 µm 14 µm 200 µmTypical parameters for via printing using OPC Fresnel Technology Resulting Aerial Image Depth of focus (DOF) DOF 11µm via at 800 µm gap SUSS MicroTec, Advanced Mask Aligner Lithography (AMALITH)43
- 44. PHOTOMASKS: PHASE SHIFT MASKS (PSM) Source: PKL, Mask Technology & http://www.photomask.com/products/phase-shift-masks Binary Chrome Mask Alternating Aperture Phase-Shift Mask (AAPSM) SUSS MicroTec, Advanced Mask Aligner Lithography (AMALITH)44
- 45. ALTERNATING APERTURE PHASE SHIFT MASK (AAPSM) 30um gap IFP HR Air stack: 50um 0 µm 50 µm GAP 0 µm 50 µm GAP 0 µm 50 µm GAP PSM Binary Mask PSM+OPC Broad Band illumination SUSS MicroTec, Advanced Mask Aligner Lithography (AMALITH)45
- 46. ALTERNATING APERTURE PHASE SHIFT MASK (AAPSM) AZ1512, 2µm Gap: 30µm PSMBinary Mask PSM+OPC Simulation Experimental results Simulation Experimental results Simulation Experimental results Broad Band illumination SUSS MicroTec, Advanced Mask Aligner Lithography (AMALITH)46
- 47. MO EXPOSURE OPTICS: SU-8 SUSS MicroTec, Advanced Mask Aligner Lithography (AMALITH)47
- 48. SU-8: IMPROVEMENT OF FOOTING & SIDEWALLS 300µm thick SU8 Improvement of footing and sidewalls with thick SU-8 using MO Exposure Optics on SUSS MA56 SU8: 300µm thick, soft contact, resolution 25µm Courtesy: micro resist technology Berlin SUSS MicroTec, Advanced Mask Aligner Lithography (AMALITH)48
- 49. MO EXPOSURE OPTICS FOR SU-8 SUSS MA6 MOEO SUSS MicroTec, Advanced Mask Aligner Lithography (AMALITH)49
- 50. Light Source • Self-Calibrating • Customized Illumination Photomask • Binary • OPC Exposure • Exposure Time • Proximity Gap Photoresist • Negative/Positive • Chemical Enhanced ProcessResistExposureMaskSource Wet Process • Developer • Prebake/Postbake Simulation Holistic Litho • Simulation of Lithography Process Chain SUSS MicroTec, Advanced Mask Aligner Lithography (AMALITH)50
- 51. www.suss.com www.suss.ch SUSS MicroTec, Advanced Mask Aligner Lithography (AMALITH)51