Vlsi technology june 2013 (1)
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This document appears to be exam questions for a VLSI design degree examination. It contains two parts: Part A asks 10 short answer questions worth 2 marks each about topics related to VLSI technology and fabrication processes. These include questions about oxide stress in oxidation, the necessity of oxidation, projection printing, low pressure deposition advantages, the Arrhenius equation, IC processing factors, threshold adjusting in MOS fabrication, and interconnects. Part B contains two longer answer questions worth 16 marks each about crystal defects and crystal growing, asking to either list defects and explain crystal growing theory, or explain the Czochralski crystal growing process.
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Vlsi technology june 2013 (1)
- 1. I Question Paper Code: 71877 l'LE. DE:GREE EXA.~fINATIO:N, JUNE/JULY 2013. Elective VLSIDesign VL 9256/VL 956110244 VLE 32 - VLSI TECHNOLOGY (Regulation 2009/2010) Time : Three hours Maximum: 100 marks Answer ALL questions. PART A - (10 x 2 = 20 marks) 2. Write the problem associated with oxide stress in the oxidation process. 3. Write the necessity of oxidation of silicon. 4. What do you mean by projection printing? 5. List the advantages of low pressure deposition process. 6. Write the importance ofArrhenius equation. 7. List the fundamental consideration factors for an Ie processing. 8. Writethe significance of threshold adjusting in lYI08fabrication. 9. DefiDe eutectic die bonding. 10. List three COIIUQOIl interoonnection of chip to bond pads. PART B - (5 x 16 = 80 marks) 11~ (a) f» List the various defects associated with crystal structure and .. aiD them. (8) (ii) J)j8CU88 wby crystal growing is needed and explain the theory behind it. (8) Or ~lain the crystal growing approach by Czochralski process. (16)