4-level capacitor-clamped boost converter with hard-switching and soft-switching implementations

International Journal of Power Electronics and Drive System (IJPEDS)
Vol. 10, No. 1, March 2019, pp. 288~299
ISSN: 2088-8694, DOI: 10.11591/ijpeds.v10.i1.pp288-299  288
Journal homepage: http://iaescore.com/journals/index.php/IJPEDS
4-level capacitor-clamped boost converter with hard-switching
and soft-switching implementations
A. N. Kasiran, A. Ponniran, A. A. Bakar, M. H. Yatim
Faculty of Electrical and Electronic Engineering, Universiti Tun Hussein Onn Malaysia, Malaysia
Article Info ABSTRACT
Article history:
Received Mar 2, 2018
Revised Jul 9, 2018
Accepted Aug 24, 2018
This paper presents parameters analysis of 4-level capacitor-clamped boost
converter with hard-switching and soft-switching implementation.
Principally, by considering the selected circuit structure of the 4-level
capacitor-clamped boost converter and appropriate pulse width modulation
(PWM) switching strategy, the overall converter volume able to be reduced.
Specifically, phase-shifted of 120 of each switching signal is applied in the
4-level capacitor-clamped boost converter in order to increase the inductor
current ripple frequency, thus the charging and discharging times of the
inductor is reduced. Besides, volume of converters is greatly reduced if very
high switching frequency is considered. However, it causes increasing of
semiconductor losses and consequently the converter efficiency is affected.
The results show that the efficiency of 2-level conventional boost converter
and 4-level capacitor-clamped boost converter are 98.59% and 97.67%,
respectively in hard-switching technique, and 99.31% and 98.15%,
respectively in soft-switching technique. Therefore, by applying soft-
switching technique, switching loss of the semiconductor devices is greatly
minimized although high switching frequency is applied. In this study,
passive lossless snubber circuit is selected for the soft-switching
implementation in the 4-level capacitor-clamped boost converter. Based on
the simulation results, the switching loss is approximately eliminated by
applying soft-switching technique compared to the hard-switching technique
implementation.
Keywords:
Capacitor-clamped
Chopper
Hard-switching technique
Multilevel converter
Passive lossless snubber
Soft-switching technique
Copyright © 2019 Institute of Advanced Engineering and Science.
All rights reserved.
Corresponding Author:
Asmarashid Ponniran (A. Ponniran),
Faculty of Electrical and Electronic Engineering,
Universiti Tun Hussein Onn Malaysia,
86400 Parit Raja, Johor, Malaysia.
Email: asmar@uthm.edu.my
1. INTRODUCTION
Nowadays, transportation has become one of the most important thing to move from one place to
another. However, due to the large number of automobile in a big city around the world, it has become the
most critical issues which arise a pollution problem and may affect the environment and also to the human
life [1]. To overcome this problem, the world today is approaching to the green transportation for example
like electric vehicles. Due to the high voltage of the DC-link (200 V-400 V) [2]-[4], it difficults for the
designer of electric vehicle system to integrate the power storage with the electric traction part. Thus, the
system needs a power converter as an interface which has capability to handle the energy transfer from 12-48
V DC bus to the high voltage DC-link. DC-DC boost converters become the main key blocks inside the
electric vehicle system as the auxiliary power supply of the electrics load [5], [6]. Due to limitation space and
weight in electric vehicle system, the optimization design of DC-DC boost converter is required [7]-[9].
Multilevel capacitor-clamped boost converter topology might be the attractive option in order to achieve high
power density converter with considering high switching frequency. Besides that, due to the reduction of

Int J Pow Elec & Dri Syst ISSN: 2088-8694 
4-level capacitor-clamped boost converter with hard-switching and... (A.N. Kasiran)
289
voltage stress on semiconductor devices in multilevel capacitor-clamped boost converter, low rating of
semiconductor devices can be used where it may reduce the conduction loss and switching loss.
Generally, hard-switching technique in PWM converters was used due to simple controls. The
utilization of high switching frequency in DC-DC converter brings several advantages to the power converter
e.g. low volume passive component, low dv/dt and di/dt. However, high switching frequency causes greater
switching loss in the converter [10], [11]. This is due to the overlapping of current and voltage in
semiconductor devices. Thus, in order to reduce the switching loss in converters circuit, soft-switching
technique might be applied [12]-[15]. Passive lossless snubber is the effective technique for the soft-
switching implementation in order to tackle this issue due to simple circuit structure to be considered.
This paper focuses on 4-level capacitor-clamped boost converter by applying two switching
techniques, i.e., hard switching and soft switching, in order to observe the performance of the converters in
term of efficiency. The discussion on both switching techniques are highlighted in this paper. The
comparison of 4-level capacitor-clamped boost converter and 2-level conventional boost converter is
discussed as well. Furthermore, the parameters design of 4-level capacitor-clamped boost converter is
discussed. The switching loss and conduction loss of semiconductor devices are analyzed in order to observe
the efficiency of converter. Simulation results are obtained in order to verify the realization of soft-switching
at 4-level capacitor-clamped boost converter.
2. PARAMETERS DESIGN OF CONVERTER
Table 1 shows several parameters for designing conventional 2-level boost converter and 4-level
capacitor-clamped boost converter. The current ripple and the voltage ripple are considered in order to
appropriately select the inductor and capacitor, respectively [18]-[20]. By appropriately design the current
ripple and voltage ripple, the size and volume of passive components is reduced, consequently the overall
volume of the converter is reduced as well.
Table 1. Parameters design of converter
Parameter Expressions
Boost ratio, β
Output voltage, Vout (V)
Boost inductor, L(2-level) (H)
Boost inductor, L(4-level) (H)
Capacitor-clamped 1, C1 (F)
Capacitor-clamped 2, C2 (F)
Output capacitor, Cout (F)
3. PRINCIPLE OF HARD-SWITCHING TECHNIQUE
Basically, DC-DC boost converter used PWM technique to control the turn-ON and turn-OFF of
semiconductor devices in the power converter circuit. Figure 1(a) shows the circuit structure of 2-level
conventional boost converter, meanwhile Figure 1(b) shows the circuit structure of 4-level capacitor-clamped
boost converter. In the 4-level capacitor-clamped boost converter circuit configuration, it consists of three
semiconductors switches S1, S2 and S3. Meanwhile, for the operation mode, it requires 120-degree phase-
shifted of the switching pattern to operate. Figure 2 shows the 120-degree phase shift PWM technique to
control the turn-ON and turn-OFF of the semiconductor switches in the 4-level capacitor-clamped boost
converter circuit.
Six operation modes in one full complete cycle, i.e., Mode 1 (S2 and S3 are turn-ON), Mode 2 (only
S3 is turn-ON), Mode 3 (S1 and S3 are turn-ON), Mode 4 (only S1 is turn-ON), Mode 5 (S1 and S2 are turn-
ON) and Mode 6 (only S2 is turn-ON). The unique feature in 4-level capacitor-clamped boost converter
D


1
1


D
V
V in
out


1
)
2
(
)
2
(
2 level
L
sw
out
level
I
f
DV
L




)
4
(
)
4
(
6 level
L
sw
out
level
I
f
DV
L




1
)
4
(
1
C
sw
in
level
V
f
DI
C



2
)
4
(
2
C
sw
in
level
V
f
DI
C



)
4
( level
Cout
out
sw
out
out
V
V
f
DP
C



(1)
(2)
(3)
(4)
(5)
(6)
(7)

 ISSN: 2088-8694
Int J Pow Elec & Dri Syst, Vol. 10, No. 1, March 2019 : 288 – 299
290
circuit structure is the existing of middle capacitor which it shared the boost-up energy with the boost
inductor where the inductor can be design smaller [20], [21].
(a) 2-level conventional boost converter (b) 4-level capacitor-clamped boost converter
Figure 1. Circuit structure
Figure 2. 120-degree phase-shifted PWM switching patterns
3.1. Switching loss
Basically, the switching loss in hard-switching technique occurred in two conditions which is during
turn-ON and turn-OFF of the semiconductor devices. The switching loss is occurred due to the overlapping
of current and voltage in switching devices as shown in Figure 3.
Figure 3. Illustration overlapping of current and voltage in switching devices
In hard-switching technique, the switching loss is estimated by considering the voltage (Vds) and
current (Ids) of switching devices during operation. The summation of rise time (tr) and fall time (tf) of current
Vds Ids

291
and voltage in switching devices are also taken into consideration. The switching loss of converter is
determined in one switching period; thus, it requires switching frequency used for the converter as expressed
in (8). The expression of the switching loss is expressed as follows:
   
 
sw
f
r
ds
ds
sw f
t
t
V
I
P 




 


6
(8)
3.2. Conduction loss
Theoretically, high conduction loss occurs due to large ON-resistance in switching devices. In
multilevel structure, low rating of switching device can be selected due to low voltage stress on switching
device. Thus, it reduces the conduction loss due to the small ON-resistance (RON). Meanwhile, the conduction
loss of diode is depending on forward rms current If(rms) where it considered maximum and minimum current
of diode. Forward bias voltage (Vf) is referred to the datasheet and D is the duty cycle used in the converter.
The conduction loss for a switching device and a diode are expressed as follow:
(9)
(10)
4. PRINCIPLE OF SOFT-SWITCHING TECHNIQUE
Generally, there are several techniques in soft-switching i.e., active snubbers, resistor capacitor and
diode (RCD) snubbers, resonant converter and passive lossless snubber. Active snubber circuit able to
increase high efficiency of converter, but it requires additional circuits. Meanwhile, RCD snubbers have the
worst performance even the circuit is simple due to the existing of resistor element [22]. However, passive
lossless snubber has a simple circuit and able to increase the efficiency of converter. Due to this reason,
passive lossless snubber is selected over the resonant converter due to the cost and reliability of the circuit.
Figure 4 shows the three cells of passive lossless snubber circuit are added to the 4-level capacitor-clamped
boost converter. Passive lossless snubber circuit consist of snubber inductors (Lr1, Lr2, Lr3), snubber
capacitors (Cr1, Cr2, Cr3), buffer capacitors (Cs1, Cs2, Cs3), and diodes (Ds11, Ds12, Ds13, Ds21, Ds22, Ds23,
Ds31, Ds32, Ds33).
Figure 4. 4-level capacitor-clamped boost converter with passive lossless snubber circuit
D
R
I
P ON
ds
m
cond 


2
)
(
f
rms
F
d
cond V
I
P 
 )
(
)
(

Vin
L4-level C1 C2
Cout
Vout
S3
S2
S1
Lr1
Ds13
Ds12
Ds11
D1
Cs1
Cr1
Ds23
Ds22
Ds21
D2
Cs2
Lr2
Cr2
Ds33
Ds32
Ds31
D3
Cs3
Lr3
Cr3

 ISSN: 2088-8694
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Basically, switching loss is occurred due to the surge current in semiconductor devices. The passive
lossless snubber circuit consist of snubber inductor and snubber capacitor that operated in order reduce the
switching loss during turn-ON and turn-OFF of semiconductor devices. In other word, the snubber inductors
and capacitors are added in order to realize the soft-switching conditions. Meanwhile, the buffer capacitor
function as a tank of resonant energy for one complete cycle where the energy will transfer to the output.
This is because the snubber circuit causes degradation of the output voltage. Thus, the buffer capacitor is
added to realize the lossless snubber circuit operation. Principally, there is no power dissipated or
accumulated in the snubber circuit components.
4.1. Design guideline of ppssive lossless ssbber circuit
In order to identify the value of snubber circuit of 4-level capacitor-clamped boost converter, several
parameters are required to obtain. The value of snubber inductor, snubber capacitor and buffer capacitor were
same for the three cells. Principally, the value of snubber inductor and snubber capacitor must be combined
in a one resonant frequency where it can be expressed as follows:
(11)
Then, the current range (Imin and Imax) of switching device must be obtained to ensure the soft-
switching can be achieved. The minimum and maximum current of switching device can be expressed
as follows:
(12)
(13)
where the maximum current of switching device occurs during the input voltage in its minimum. Next, the
range of duty cycle (Dmin and Dmax) is calculate to ensure the minimum and maximum duty cycle where the
soft-switching occur. The minimum and maximum duty cycle can be expressed as follows:
(14)
(15)
where the minimum duty cycle occurs when the input voltage in its maximum. By relating the inductance and
capacitance snubbers with the resonant interval times where it can be suggested less than some fraction (0 < k
< 1) of the switching period Ts. Thus, this relation can be expressed as follows:
(16)
where the appropriate value of k is selected for a required Tr-on or Tr-off. The value of k is select by refer to the
Figure 5 where the smallest value of k is selected and which satisfies the largest allowable value of Tr-on and
Tr-off. From Figure 5, IR is the current ratio of maximum current and minimum current. Meanwhile, x is the
ratio of snubber capacitor and buffer capacitor which can be equate by 0.1. The detail of design principle is
given in the paper [12], [13]. The interval for Tr-on is I = Imax where it represents the worst case, meanwhile
for Tr-off interval, several current ratios are shown in Figure 5.

r
r
r
C
L
1



max
min


in
in
V
P
I

min
max


in
in
V
P
I

out
in
V
V
D max
_
min 1


out
in
V
V
D min
max 1 



s
r
kT



2

293
Figure 5. The intervals of resonant turn-ON and resonant turn-OFF [12]
After several parameters has been determined, the value of snubber inductor, snubber capacitor, and
buffer capacitor can be calculated by using the expressions as follows:
(17)
(18)
(19)
4.2. Switching loss reduction
Principally, passive lossless snubber circuit are added in order to eliminate or reduce the switching
loss in 4-level capacitor-clamped boost converter. The function of snubber inductor and snubber capacitor in
passive lossless snubber circuit are to prevent the overlapping between current and voltage in semiconductor
devices during turn-ON and turn-OFF conditions where the voltage across the semiconductor devices is
reduced to zero before the current rises. Figure 6 shows the illustration of soft-switching during turn-ON of
switching device
Figure 6. Illustration of soft-switching during turn-ON condition

max
2 I
V
kT
L out
s
r



out
s
r
V
I
kT
C

2
max


1
.
0
r
s
C
C 
Soft-
switching
Vds Ids

 ISSN: 2088-8694
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By applying passive lossless snubber circuit, the switching loss in 4-level capacitor-clamped boost converter
is approximately eliminated where the switching loss are approximately zero. Thus, the switching loss in 4-
level capacitor-clamped boost converter can be neglected in order to calculate the efficiency of the converter.
In 4-level capacitor-clamped boost converter only consider conduction loss of semiconductor devices which
MOSFETs and diodes.
4.3. Balancing of voltage stress on switching devices
In order to achieve soft-switching condition, the voltage stress on switching devices must be
balanced. Thus, maximum and minimum voltage and current of switching devices can be determined. Due to
improper charging and discharging of capacitors in 4-level capacitor-clamped boost converter, automatic
voltage regulator controller is required to control the charging and discharging of capacitor-clamped [8].
Failure to balance the capacitor-clamped voltage, may causes the voltage stress on switching devices
unbalanced. However, this paper only considers natural balancing circuit in order to balance the voltage
stress on switching devices in 4-level capacitor-clamped boost converter circuit.
Basically, natural balancing circuit only consists of inductor and capacitor. In order to determine the
inductance and capacitance of natural balancing circuit, the parameters are complement each other. However,
due to multilevel structure, the resonant frequency is equal to three times of switching frequency. The natural
balancing circuit is connected at the input side of 4-level capacitor-clamped boost converter circuit which is
parallel with the three switching devices. Commonly, the inductance and capacitance of natural balancing
circuit used are small in value. Even though, the natural balancing circuit is used, for a better results and
performance of converter, closed loop controller is recommended in order to control the charging and
discharging of capacitor-clamped which can affect the voltage stress on switching devices in multilevel
structure circuit.
5. SIMULATION RESULTS
Table 2 shows the specifications of 2-level conventional boost converter and 4-level capacitor-
clamped boost converter by using hard-switching technique. Meanwhile, Table 3 shows the selected
specifications of soft-switching circuit for 2-level conventional boost converter and 4-level capacitor-
clamped boost converter.
Table 2. Specifications for hard-switching technique
Specifications Value
Output power, Pout (W) 1600
Output voltage, Vout (V) 400
Duty cycle, D 0.5
Switching frequency, fsw (kHz) 15, 30, 50
Boost inductor, L(2-level) (mH) 0.5
Boost inductor, L(4-level) (mH) 0.5
Capacitor-clamped 1, C1 (µF) 200
Capacitor-clamped 2, C2 (µF) 200
Output capacitor, Cout (µF) 470
Table 3. Selected specifications of soft-switching circuit
Parameter Value
Switching frequency, fsw (kHz) 15 30 50
Snubber inductor, Lr (µH) 8 4 2
Snubber capacitor, Cr (nF) 10 5 3
Buffer capacitor, Cb (µF) 100 50 30
5.1. Losses analysis in hard-switching technique
In this analysis, same specifications are used for 2-level conventional boost converter and 4-level
capacitor boost converter by using selected switching frequency which are 15 kHz, 30 kHz, and 50 kHz.
Principally, in hard-switching technique, the switching loss is increased when high switching frequency is
used. IXFH20N80Q of MOSFET model and VS-20ETSPBF of diode model are considered for analysis of 2-
level conventional boost converter. Meanwhile, NTE2921 of MOSFET model and SBR20A300CT of diode
model are considered for 4-level capacitor-clamped boost converter. Thus, from the simulation results, it has
been verified that the switching loss is increased as the high switching frequency is used. However, the

295
conduction loss remains same. This is because the conduction loss is not related to the switching period. In
order to obtain the efficiency of the converters, the losses only consider switching loss and conduction loss of
semiconductor devices. Table 4 shows the losses analysis of 2-level conventional boost converter and 4-level
capacitor-clamped boost converter in hard-switching technique with different switching frequencies. The
total power losses consist of switching loss at MOSFET and conduction loss at MOSFET and diode. By
considering the switching frequency 50 kHz, the total power losses increase in 2-level conventional boost
converter and 4-level capacitor-clamped boost converter where the value is 22.53 W and 37.31 W,
respectively. Almost 30% switching loss increases by increasing the switching frequency to 30 kHz.
Meanwhile, almost 70% switching loss increases by increasing the switching frequency to 50 kHz. The
efficiency for 2-level conventional boost converter and 4-level capacitor-clamped boost converter is 98.59%
and 97.67%, respectively. Due to an additional of semiconductor devices, the total power losses increase in
4-level capacitor-clamped boost converter. In this analysis, the losses of 2-level conventional boost converter
have the lower value if compared to the 4-level capacitor-clamped boost converter as high switching
frequency is used. Figure 7 shows the total power losses of 2-level conventional boost converter and 4-level
capacitor-clamped boost converter against switching frequency. Meanwhile, Figure 8 shows the simulation
result of 2-level conventional boost converter and 4-level capacitor-clamped boost converter in hard-
switching condition with switching frequency 15 kHz is used.
Table 4. Losses when using Hard-switching Technique
Converter Structure
Switching
Frequency (fsw)
Switching
Loss (Psw)
Conduction
Loss (Pcond)
Total Power
Losses (Ploss)
2-level conventional
boost converter
15 kHz 0.33 W 21.44 W 21.77 W
30 kHz 0.66 W 21.44 W 22.10 W
50 kHz 1.09 W 21.44 W 22.53 W
4-level capacitor-clamped
boost converter
15 kHz 0.58 W 26.88 W 35.94 W
30kHz 1.17 W 26.88 W 36.53 W
50 kHz 1.95 W 26.88 W 37.31 W
Figure 7. Graph of total power losses against switching frequency
Figure 8. Simulation result in hard-switching condition with fsw =15 kHz

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5.2. Power losses reduction in soft-switching technique
In order to analyze this part, the parameter selection of passive lossless snubber circuit in Table 3
are considered. From the simulation results, it shows that the passive lossless snubber circuit are able to
tackle the problem of switching loss in 2-level conventional boost converter and 4-level capacitor-clamped
boost converter. Basically, this passive lossless snubber circuit realizes soft-switching condition during turn-
ON and turn-OFF of the semiconductor devices. The simulation result shows that the switching loss of
semiconductor devices in both converters is approximately zero. Figure 9 shows the soft-switching
conditions of 2-level conventional boost converter and 4-level capacitor-clamped boost converter is achieved
during the turn-ON condition at S1. From the results, there are no overlapping between current and voltage in
semiconductor devices which lead to no switching loss produced. Table 5 shows the losses analysis of 2-level
conventional boost converter and 4-level capacitor-clamped boost converter which only consider conduction
loss of MOSFET and diode due to switching loss is too small and can be neglected. Meanwhile, Figure 10
shows the graph of total power losses against switching frequency for 2-level conventional boost converter
and 4-level capacitor-clamped boost converter.
Figure 9. Simulation result of soft-switching condition with fsw = 15 kHz
Table 5. Losses When Using Soft-Switching Technique
Converter Structure
Switching
Frequency (fsw)
Switching Loss
(Psw)
Conduction
Losses (Pcond)
Total Power
Losses (Ploss)
2-level conventional
boost converter
15 kHz Approximately
equal to 0 W
(Neglected)
12.25 W 12.25 W
30 kHz 11.38 W 11.38 W
50 kHz 11.05 W 11.05 W
4-level capacitor-clamped
boost converter
15 kHz Approximately
equal to 0 W
(Neglected)
28.15 W 28.15 W
30kHz 29.47 W 29.47 W
50 kHz 29.67 W 29.67 W
Figure 10. Graph of total power losses against switching frequency

Drain-Source Current (A)
Ids = 11.65 A
Drain-Source Voltage (V)
Vds=400 V
Soft-
switching
Pout = 1600 W
Vout = 400 V
Ids = 8 A
Drain-Source Current (A)
Soft-
switching
Drain-Source Voltage (V)
Vds=132 V
Pout = 1600 W
Vout = 400 V

297
The total power losses in 2-level conventional boost converter and 4-level capacitor-clamped boost
converter is reduced if compared to the hard-switching technique. Even though high switching frequency is
used, the total power losses of converters by using passive lossless snubber circuit is lower than the
converters using hard-switching technique. From the result, total power losses in 2-level conventional boost
converter and 4-level capacitor-clamped boost converter in 50 kHz switching frequency are 11.05 W and
29.67 W, respectively. If the losses result is compared with hard-switching technique, the losses in soft-
switching technique is reduced. The efficiency of 2-level conventional boost converter and 4-level capacitor-
clamped boost converter increase by using soft-switching technique, where the efficiency is 99.31% and
98.15%, respectively. By increasing the switching frequency, the time-ON for the semiconductor devices
become smaller which cause the conduction loss decrease. Thus, soft-switching technique plays a vital role in
order to reduce the switching loss of semiconductor devices, where this technique is more effective when
high switching frequency is used.
5. CONCLUSION
As the conclusion, the authors have discussed and compared the efficiency of 2-level conventional
boost converter and 4-level capacitor-clamped boost converter by applying hard-switching technique and
soft-switching techniques. The losses at semiconductor devices, which are switching loss and conduction
loss, are considered. In simulation works, the switching loss issue is rectified by applying soft-switching,
where it has been realized by using passive lossless snubber circuit. The additional circuit of soft-switching
may reduce the losses of converter at high switching frequency. Due to high switching frequency, the volume
of converter can be reduced as well. Moreover, the circuit structure of 4-level capacitor-clamped boost
converter also able to reduce the converter volume. Furthermore, by applying soft-switching technique, the
range of duty cycle for a converter is limited. Figure 11 shows the relationship between volume of converter
and losses of converter by using hard-switching or soft-switching techniques when high switching frequency
is considered.
Figure 11. Relationship of volume converter and total losses by using different switching techniques
ACKNOWLEDGEMENT
The authors would like to express their appreciation to the Universiti Tun Hussein Onn Malaysia.
This research is funded by the Universiti Tun Hussein Onn Malaysia under Tier 1 Research Grant (Vot No.
U858) and GPPS Research Grant (Vot No. U951).
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technique applied

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BIOGRAPHIES OF AUTHORS
Mohd Amirul Naim Bin Kasiran received the bachelor’s degree in Electrical Engineering
(Power) from Universiti Tun Hussein Onn Malaysia, Parit Raja, Malaysia, in 2017. He is
currently working toward master’s in electrical engineering also at Universiti Tun Hussein Onn
Malaysia.
Asmarashid Bin Ponniran received the bachelor’s degree in electrical engineering from
Universiti Tun Hussein Onn Malaysia, Parit Raja, Malaysia, in 2002, and the master’s degree in
electrical engineering (power) from Universiti Teknologi Malaysia, Johor Bahru, Malaysia, in
2005. Then, he received the Ph.D degree in electrical engineering from the Nagaoka University
of Technology, Nagaoka, Japan. He is currently working as lecturer with Universiti Tun Hussein
Onn Malaysia. His research interest includes power converter, underground power cable in
distribution side, and demand side management of power consumption.
Afarulrazi Bin Abu Bakar was born in Johor, Malaysia on May 18, 1980. He received his
M.Eng. (Electrical) from University Tun Hussein Onn Malaysia (UTHM) in 2007 and B.Eng.
(Electrical) from University Teknologi Mara (UiTM) in 2004. He has been working as a lecturer
in Department of Electrical Power Engineering, Faculty of Electrical and Electronic
Engineering, UTHM since 2007. Currently he is persuing Ph.D degree in UTHM. His research
interests include the area of power electronics and renewable energy.
Mohd Hafizie Bin Yatim received the bachelor’s degree in electrical engineering technology
from Universiti Tun Hussein Onn Malaysia, Parit Raja, Malaysia, in 2017. He is currently
working toward master’s in electrical engineering also at Universiti Tun Hussein Onn Malaysia.

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