LOW POWER LOW VOLTAGE BULK DRIVEN BALANCED OTA

International Journal of VLSI design & Communication Systems (VLSICS) Vol.2, No.4, December 2011
DOI : 10.5121/vlsic.2011.2411 131
LOW POWER LOW VOLTAGE BULK DRIVEN
BALANCED OTA
Neha Gupta1
, Sapna Singh2
, Meenakshi Suthar3
and Priyanka Soni4
Faculty of Engineering Technology, Mody Institute of Technology and Science,
Lakshmangarh, Sikar, India
1
wdnehagupta@gmail.com, 2
singh.sapna067@gmail.com 3
meenakshi.suthar32@gmail.com,
4
priyankamec@gmail.com
ABSTRACT
The last few decades, a great deal of attention has been paid to low-voltage (LV) low-power (LP)
integrated circuits design since the power consumption has become a critical issue. Among many
techniques used for the design of LV LP analog circuits, the Bulk-driven principle offers a promising route
towards this design for many aspects mainly the simplicity and using the conventional MOS technology to
implement these designs. This paper is devoted to the Bulk-driven (BD) principle and utilizing this principle
to design LV LP building block of Operational Transconductance Amplifier (OTA) in standard CMOS
processes and supply voltage 0.9V. The simulation results have been carried out by the Spice simulator
using the 130nm CMOS technology from TSMC.
KEYWORDS
Bulk-driven MOS, OTA, BOTA, Body effect
1. INTRODUCTION
The modern electronics industry is witnessing the dominance of miniaturization in every sphere
of electronics and communications forming the backbone of medical electronics, mobile
communications, computers, state-of-art processors etc. Designing high performance analog
circuits is becoming increasingly challenging with the persistent trend towards reduced supply
voltages. An important factor concerning analog circuits is that, the threshold voltages of future
standard CMOS technologies are not expected to decrease much below what is available today.
Though the MOS transistor is a four terminal device, it is most often used as a three terminal
device since the bulk terminal is tied either to the source terminal. Therefore, a large number of
possible MOS circuits are overlooked; hence a good solution to overcome the threshold voltage is
to use the Bulk-driven principle [1-3].
The principle of the Bulk-driven method is that, the gate-source voltage is set to a value sufficient
to form an inversion layer, and an input signal is applied to the bulk terminal. Since the bulk
voltage affects the thickness of the depletion region associated with the inversion layer i.e. the
conduction channel. The drain current can be modulated by varying the bulk voltage through the
body [4-6]. In the present work a Low Power Low Voltage Bulk driven Balanced Operational
Transconductance Amplifier has been designed. In this design inputs are applied to the bulk

132
terminal of the NMOS input transistors and gate terminals are biased with a voltage so that the
NMOS transistors come in active region. In this manner, the threshold voltage can be either
reduced or removed from the signal path.
2. BULK- DRIVEN BALANCED OTA
When the input devices of the bulk-driven differential pair in Figure 1. operate in the
strong inversion saturated region, their drain current is given by:
‫ܫ‬஽ =
ଵ
ଶ
݇௣
ᇱ
ቀ
ௐ
௅
ቁ ሺܸௌீ − |்ܸு|ሻଶ
(1)
Where, the symbols have their usual meaning and the channel length modulation effect
has been neglected. The behavior of the threshold voltage as a function of the bulk-to-
source voltage VBS of the input devices can be expressed as
|்ܸு|= |்ܸு଴| + |ߛ|ൣඥ2|ߔி| + ܸ஻ௌ − ඥ2|ߔி|൧ (2)
Where, VTH0 is the value of the threshold voltage VTH when VBS is zero, γ is the body
effect parameter, and ΦF is Fermi potential. The operation of bulk-driven devices is
based on the body effect, that is, on the dependence of VTH on VBS [7-8]. Indeed, from (1)
and (2), ID changes when changing VBS and, hence, a transconductance function between
the bulk voltage and the drain current is achieved. The transconductance of a bulk-driven
MOS transistor may be obtained from (1) and (2) as
݃௠௕ =
డூವ
డ௏ೄಳ
=
|ఊ|௚೘
ଶඥଶ|ఃಷ|ା௏ಳೄ
=
|ఊ|
ଶඥଶ|ఃಷ|ା௏ಳೄ
ඥ2ߚ‫ܫ‬஽ (3)
Where, gm is the gate transconductance of the device. If typical values for γ and ΦF are
considered, the value of gmb ranges from 20% to 50% the value of gm.
To enable body driving, one must first bias the gate to develop a channel inversion layer. Once
the inversion layer has been formed there will be depletion region associated with junction of the
inversion layer and transistor body. The current is then modulated by varying the body voltage,
which in turn modulates the inversion layer width via the depletion region. The drain current
versus body voltage for this condition is obtained from (1) and (2)
‫ܫ‬஽ =
ଵ
ଶ
݇௣
ᇱ
ቀ
ௐ
௅
ቁ ൫ܸீௌ − ்ܸ଴ − ߛඥ2|ߔி| + ܸ஻ௌ + ߛඥ2|ߔி|൯
ଶ
(4)
3. BULK DRIVEN BALANCED OTA
The Bulk-driven OTA was presented in [9-12]. The two-stage OTA is shown in Figure1. It
consists of two stages, the first which is combined of the Bulk-driven differential stage with
NMOS input devices M1 and M2 and the current mirror M3 and M4 acting as an active load. By
setting the gate-source voltage to a value sufficient to turn on the transistor, then the operation of
the Bulk-driven MOS transistor becomes a depletion type. Input voltage is applied to the bulk-
terminal of the transistor to modulate the current flow through the transistor. OTA with Bulk-
driven input transistors has been designed. The design is depicted in Figure 1 and the simulation
results are shown in Table 1.

133
Figure 1 Bulk Driven Balanced OTA
4. BULK DRIVEN BALANCED OTA CHARACTERISTICS
Operating the MOS through the bulk-terminal allows the design of extremely low-supply voltage
circuits. The behavior of the bulk-driven MOSFET is very close to a junction-field-effect
transistor (JFET), the signal is applied between the bulk and the source and the current flowing
from the source to the drain is modulated by the reverse bias applied on the bulk. The gate-source
voltage of the MOS is fixed and is set to turn the MOSFET on. Desirable characteristics of Bulk-
driven transistors are [10, 11]:
• Low-voltage low-power consumption of the circuits.
• Design simplicity and the acceptable features of the circuits.
• Depletion characteristics avoid VT requirement in the signal path.
• The conventional front gate could be used to modulate the Bulk-driven MOS transistor.
Undesirable characteristics of Bulk-driven transistors are:
• The transconductance of a Bulk-driven MOST is smaller than that of a conventional Gate-
driven, which may result in lower GBW in OTA.
• The polarity of the Bulk-driven MOST is technology related. For a P (N) well CMOS
process, only N (P) channels Bulk-driven MOSTs are available. This may limit its
applications. For example a rail-to-rail Bulk-driven op-amp needs a dual well process to
realize it, this process is more expensive, bigger chip area needed and it has worst matching
comparing with one well process.
• Prone to turn on the bulk-channel PN junction, which may result in a latch-up problem.
4.1 AC Response
This response is used for observing open loop gain, Unity Gain Bandwidth (UGB), 3-dB
bandwidth and the Phase Margin of the circuit. In the test setup a differential AC signal of 1V is

134
applied to the inputs. No dc bias potential is applied to bulk terminals. The bias voltage is applied
to gate terminals to bring transistor in saturation region. The output was taken between single end
and ground terminal.
Figure 2. Voltage Gain of Bulk Driven Balanced OTA
Figure 3. Voltage Phase of Bulk Driven Balanced OTA
The Gain of Bulk Driven Balanced OTA is 12 dB , 3dB bandwidth is 300KHz, Unity Gain
Bandwidth is 1.31MHz, Phase Margin is (-73º+180º) 107º

135
4.2 Step Response
The slew rate is defined as the ratio of the maximum output current to the load capacitance as
shown below:
ܴܵ =
ௗ௏೚ೠ೟
ௗ௧
=
ூ೚ೠ೟
஼ಽ
(5)
It is specified on the amplifier’s data sheet in units of V/µs. It implies that if the input signal
applied to an amplifier circuit is of the nature that demands an output response faster than the
specified value of SR, the operational amplifier will not comply. The settling time of an amplifier
is very important parameter as it defines the speed at which amplifier can be sampled.
Figure 4. Slew rate of Bulk Driven Balanced OTA
Figure 5. Settling Time of Bulk Driven Balanced OTA

136
For measurement of slew rate a step signal of 0.9V is applied at non inverting terminal of the
amplifier. The amplifier’s slew rate is 543mV/µs for rising edge and 226mV/ µs for the falling
edge and settling time of is 0.7µs
4.3 Effect of Variation of Temperature on Frequency response
The frequency response is shown in Figure 6. at different temperatures. The temperature is varied
from -20º to 70 º and corresponding change in gain is from 11.28dB to 12.43dB. The gain will
decrease with temperature because transconductance of opamp will decrease with temperature.
The decrement in transconductance is due to decrement in mobility.
Figure 6. Effect of Variation of Temperature on Frequency response
4.4 Transient Results
We get the output swing (peak to peak) 550mV. In this we can apply an input signal of swing
400mV for which the output signal swing is not distorted. Simulation result is shown Figure 7.
Figure 7. Output Voltage Swing of Bulk Driven Balanced OTA

137
4.5 Power Measurement
Average power consumed at 0.9 V supply is 3.9µW. Power consumption at different power
supplies are shown in Figure 8.
Figure 8. Power measurements with different supply voltages (Vdd)
4.6 Noise Analysis
The input referred noise is 400nV/√‫ݖܪ‬ and output referred noise is 800 nV/√‫.ݖܪ‬ The simulations
for noise analysis are shown in Figure 9(a) and 9(b).
Figure 9(a). Input referred noise
0.00E+00
5.00E-06
1.00E-05
1.50E-05
2.00E-05
2.50E-05
3 2.5 2 1.5 1 0.9 0.8 0.7
Power
Vdd
Power BDBOTA

138
Figure 9(b). Output referred noise
Prepared circuit of amplifier is simulated at Tanner EDA T-SPICE tool at 130nm technology. The
amplifier is to be powered from a 0.9 volts power supply. All values have been measured at load
capacitance of 1 pF. The constant current source Ib is 20µA.
4.7 DC OTA Response at Various Common Mode Voltages
The output voltage is measured at different differential input (VVdiff) ranging from -0.5V to 0.9
V .This simulation is done at various common mode voltages(Vcm) ranging from 0 to 0.5V. The
simulation is shown in Figure 10.
Figure 10. Measured DC OTA responses at different common mode input voltage

139
Also output voltage is plotted at differential input ranging from 0 to 900mV in Figure 11. In this
graph we can see that output is linearly following the input over a range of input voltage from 200
to 800mV. The linear range is 600mV.
Figure 11. Output Voltage is plotted against dc sweep of input voltages
Table 1 Simulated Results of Bulk Driven Balanced OTA
Characteristics Simulated results
Power consumption 3.9µW
Open loop gain 12 dB
Phase Margin 107º
3 dB Bandwidth 300kHz
Unity Gain Bandwidth 1.31MHz
Positive Slew Rate 543mV/µs
Negative Slew Rate 226mV/µs
Settling Time (at 10% tolerance) 0.7µs
Maximum voltage swing 550mV
Output Referred Noise 800nV/√‫ݖܪ‬
Input Referred Noise 400nV/√‫ݖܪ‬

140
5. CONCLUSION
In this paper a two stage low power low voltage Bulk Driven Balanced OTA has been designed
and simulated. In this circuit as inputs are applied on bulk terminal so threshold voltage
limitation is not there, i.e. we can have input of more voltage swing to obtain output swing
without distortion. The output voltage swing is 550 mV and input referred noise of the proposed
bulk driven circuit is 400 nV/√‫ݖܪ‬ and output referred noise is 800 nV/√‫ݖܪ‬ . This circuit is
operated at a power supply of 0.9V and the power dissipation is 3.9µW.
As power and voltage are the two main constraints in analog/mixed signal systems. Bulk driven
NMOS input transistors are used for low power and low voltage design. The ac signal is applied
to Bulk terminal and gate terminal is at ac ground. The current in NMOS transistor is modulated
by bulk signal which is a novel technique to avoid threshold voltage limitation in the path of input
ac signal. Gate terminal is only biased to bring the transistor in active region. This technique uses
all the four terminals of MOS device as bulk terminal is ignored in earlier years and is not fully
utilized to improve device performance.
6. ACKNOWLEDGEMENT
We would like to sincerely thank Prof. B.P Singh, Head of Department of Electronics &
Communication, Mody Institute of Technology and Science, Lakshmangarh who inspired us to
do this work. In addition we would like to thank Prof P.K Das, Dean, Faculty of Engineering,
Mody Institute of Technology and Science for providing us resources to carry out our work.
REFERENCES
[1] A.Guzinski, M. Bialko, and J. C. Matheau, “Body-driven differential amplifier for application in
continuous-time active C-filter,” Proc. ECCD, Paris, France, 1987, pp. 315 - 319.
[2] S. Chatterjee, Y. Tsividis, and P. Kinget, “0.5-V analog circuit techniques and their application in
OTA and filter design,” IEEE J. Solid-State Circuits, vol. 40, no. 12, pp. 2373–2387, Dec. 2005.
[3] B. J. Blalock, H. W. Li, P. E. Allen, and S. A. Jackson, “Body-driving as a low-voltage analog design
technique for CMOS technology,” IEEE Southwest Symp. on Mixed-Signal Design (SSMSD) 2000,
pp. 113-118, February 2000.
[4] B.J. Blalock, P.E. Allen, G.A. Rincon-Mora, “Designing 1-V Op amps using standard digital CMOS
technology,” IEEE Transactions on Circuits and Systems II, Analog and Digital Signal Processing,
45(7), 1998, pp. 769–780.
[5] F. Khateb, “Bulk-driven Op-Amps for low power applications,” Elektrotechnika a informatika 2003,
Nečtiny Castle, 2003, pp. 51 -55.
[6] George Raikos, Spyridon Vlassis, “0.8 V bulk-driven operational amplifier,” in Analog Integrated
Circuits and Signal Processing, 2009.
[7] J.M. Carrillo, G. Torelli, R. Pérez-Aloe, and J.F. Duque-Carrillo, “1-V rail-to-rail CMOS opamp with
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[9] M. Carrillo, J.F. Duque-Carrillo and G. Torelli, "l-V continuously tunable CMOS bulk-driven
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141
[10] Micallef, G. Azzopardi, and C.J. Debono, "A low-voltage wide-input-range bulk-input CMOS
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AUTHORS
Neha Gupta received her B.Tech degree in Electronics and Communication Engineering
from Mody institute of Technology and Scien ce, Lakshmangarh in 2009, and is
currentlyM.Tech VLSI Design student of Mody Institute of Technology and Science,
Lakshmangarh. Her research interests are analog integrated circuit design and high
performance analog circuits
Sapna Singh received her B.Tech degree in Electronics and Communication Engineering
from Kumaon Engineering College, Dwarahat in 2010,and is currently M.Tech VLSI
Design student of Mody Institute of Technology and Science, Lakshmangarh. Her
research interests are low power vlsi design and analog and digital integrated circuit
design.
Meenakshi Suthar received her B.Tech degree in Electronics and Communication
Engineering from Marudhar Engineering College,Bikaner in 2010,and is currently M.Tech
VLSI Design student of Mody Institute of Technology and Science, Lakshmangarh. Her
research interests are analog integrated circuit design and analog communication systems.
Priyanka Soni received her B.Tech degree in 2007 from Marudhar Engineering College
in Bikaner and M.Tech degree in VLSI design in 2011 from Mody Institute of
Technology and Science, Lakshmangarh . Currently she is working as Assistant
Professor in Mody Institute of Technology and Science .Her research interest are analog
integrated circuit design and low power vlsi design.

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