MODELING OF REDISTRIBUTION OF INFUSED DOPANT IN A MULTILAYER STRUCTURE DOPANT UNDER INFLUENCE OF VARIATION OF PRESSURE OF VAPOR OF THE DOPANT

Applied Mathematics and Sciences: An International Journal (MathSJ ), Vol. 1, No. 2, August 2014
53
MODELING OF REDISTRIBUTION OF INFUSED DOPANT
IN A MULTILAYER STRUCTURE DOPANT UNDER
INFLUENCE OF VARIATION OF PRESSURE OF VAPOR OF
THE DOPANT
E.L. Pankratov1
, E.A. Bulaeva2
1
Nizhny Novgorod State University, 23 Gagarin avenue, Nizhny Novgorod, 603950,
Russia
2
Nizhny Novgorod State University of Architecture and Civil Engineering, 65 Il'insky
street, Nizhny Novgorod, 603950, Russia
ABSTRACT
In this paper we used an analytical approach to model nonlinear diffusion of dopant in a multilayer struc-
ture with account nonstationary annealing of the dopant. The approach do without crosslinking solutions at
the interface between layers of the multilayer structure. In this paper we analyzed influence of pressure of
vapor of infusing dopant during doping of multilayer structure on values of optimal parameters of technol-
ogical process to manufacture p-n-junctions. It has been shown, that doping of multilayer structures by
diffusion and optimization of annealing of dopant gives us possibility to increase sharpness of p-n-junctions
(single p-n-junctions and p-n-junctions within transistors) and to increase homogeneity of dopant distribu-
tion in doped area.
KEYWORDS
Dopant diffusion; multilayer structure; p-n-heterojunctions; optimization of technological process; influ-
ence of pressure of vapor
1. INTRODUCTION
One of actual problems of solid state electronics is increasing of degree of integration of elements
of integrated circuits (p-n- junctions, field and bipolar transistors, thyristors, …) [1-9]. At the
same time one can find decreasing dimensions of the elements. To decrease the dimensions dif-
ferent approaches are used. One group of the approaches including into itself laser and microwave
types of annealing [10-12]. One can found that during laser and microwave types of annealing
inhomogenous distribution of temperature is generated. In this situation dimensions of elements
of integrated circuits decreases due to Arrhenius law. To decrease dimensions elements of inte-
grated circuits it could be also used of inhomogeneity of heterostructures [13-15]. However it is
necessary to optimize technological process in this case [16,17]. It is known, that radiation dam-
age of semiconductor materials leads to changing of distribution of dopant concentration in p-n-
junctions and transistors [9,13,15,18]. In this situation radiation damage of semiconductor mate-
rials attracted an interest [19].
This paper is about doping by diffusion of a heterostructure, which consist of a substrate with
known type of conductivity (p or n) and epitaxial layer (see Fig. 1). A dopant has been infused in

54
the epitaxial layer from gaseous source to produce required type of conductivity (n or p). It is
known, that under special conditions sharpness of p-n- junctions increases [16,17]. Main our aim
framework the present paper is analysis of influence of pressure of vapor in source of dopant on
distribution of concentration of dopant in p-n- junction.
D0
D1
D2
0 a L
x
D(x)
Fig. 1. Heterostructure, which consist of a substrate and an epitaxial layer
2. Method of solution
We solve our aim by analysis of spatio-temporal distribution of concentration of dopant. To de-
termine the spatio-temporal distribution we solve the second Fick’s law [8,9,13]
( ) ( )






=
x
txC
D
xt
txC
C
∂
∂
∂
∂
∂
∂ ,,
(1)
with boundary and initial conditions
C(0,t)=N,
( ) 0
,
=
=Lx
x
txC
∂
∂
, C(x >0,0)=0. (2)
We assume, that dopant infusing from infinite source with near-boundary concentration N, which
is essentially larger, than limit of solubility of dopant P. In the Eq.(1) and conditions (2) we used
the following notations: C (x,t) is the spatio-temporal distribution of concentration of dopant; T is
the temperature of annealing; DC is the dopant diffusion coefficient. Value of dopant diffusion
coefficient depends on temperature through the Arrhenius law (during heating and cooling of he-
terostructure) and properties of materials of layers of heterostructure. Properties of materials de-
pends on level of doping of materials. Approximation of dependences of dopant diffusion coeffi-
cient on parameters could be written as [8]

55
( ) ( )
( )





+=
TxP
txC
TxDD LC
,
,
1, γ
γ
ξ . (3)
Here DL(x,T) taking into account the spatial (i.e. accounting several layers in heterostructure) and
temperature (due to Arrhenius law) dependences of dopant diffusion coefficient; P(x,T) is the de-
pendence of limit of solubility of dopant on coordinate and temperature; parameter γ depends on
properties of materials and could be integer in the following interval γ ∈[1,3] [8]. Concentrational
dependence of dopant diffusion coefficient has been described in details in [8].
To solve our aim let us determine solution of Eq.(1) and make analysis of dynamics of dopant. To
calculate analytical solution of Eq.(1) we used recently elaborated approach [16,17,19]. Frame-
work the approach we transform approximation of dopant diffusion coefficient to the following
form: DC=D0L[1+ε η(x,T)][1+ξ Cγ
(x,t)/Pγ
(x,T)], where 0≤ε <1, |η(x,T)|≤1, D0L is the average value
of dopant diffusion coefficient. Farther we solve Eq.(1) in the following form
( ) ( )∑ ∑=
∞
=
∞
=0 0
,,
k m
km
mk
txCtxC ξε . (4)
Functions Ckm(x,t) could be determine by solution of the following system of equation
( ) ( )
2
00
2
0
00 ,,
x
txC
D
t
txC
L
∂
∂
=
∂
∂
( ) ( ) ( ) ( )






∂
∂
∂
∂
+
∂
∂
=
∂
∂ −
2
10
02
0
2
0
0 ,
,
,,
x
txC
Tx
x
D
x
txC
D
t
txC k
L
k
L
k
η , k ≥1
( ) ( ) ( )
( )
( )








∂
∂






∂
∂
+
∂
∂
=
∂
∂ −
2
1000
02
0
2
0
0 ,
,
,,,
x
txC
TxP
txC
x
D
x
txC
D
t
txC m
L
m
L
m
γ
, m ≥1 (5)
( ) ( ) ( )
( )
( )
+





∂
∂
+
∂
∂
=
∂
∂
TxP
txC
txC
x
D
x
txC
D
t
txC
LL
,
,
,
,, 00
102
2
02
11
2
0
11
γ
γ
( ) ( ) ( ) ( )
( )
( )








∂
∂






∂
∂
+





∂
∂
∂
∂
+
x
txC
TxP
txC
Tx
x
D
x
txC
Tx
x
D LL
,
,
,
,
,
, 0000
02
01
0
γ
ηη
with boundary and initial conditions
C00(0,t)=N,
( ) 0
,
0
=
∂
∂
=x
km
x
txC
,k≥1,m≥1; Ckm(0,t)=0, Ckm(x>0,0)=0, k≥1, m≥1;
C00(x,0)=0, C00(0,0)=N; Ckm(x,0)=0, k≥1,m≥1. (6)

56
Solutions of the system of equations (5) with account conditions (6) could be obtain by standard
approaches [20,21] and could be written as
C00(0,t)=N, ( ) ( ) ( )






∑
+
+=>
∞
=
++
0
5.05.0
000
5.0
sin2
1,0
n
nn
n
texv
PtxC
π
,
where vn=πnL-1
, ( ) ( )∫=
L
nn uduvufF
0
cos , en(t)=exp(-vn
2
D0Lt), P0 is the average value of limit
solubility of dopant
( ) ( ) ( ) ( )×∑ +=
∞
=
++
0
5.05.03
0
10 sin5.0
2
,
n
nn texvn
L
D
txC
π
( ) ( ) ( ) ( )[ ]∑ ∫ +−×
∞
=
−++++
0 0
15.05.0
m
t
mnmnnn uduHuHueue ,
( ) ( ) ( ) ( ) ( ) ( ) ( )∑ ∑∫ ×−+∑ +−=
∞
=
∞
=
++
∞
=
++
0 10
5.05.0
2
0
5.05.0620
5.0sin5.0
2
,
n m
t
nk
k
kk
ueuentexvk
L
txC
( ) ( )[ ] ( ) ( ) ( ) ( )[ ] 2
0
3
0
15.05.01 DuddHHeeuHuH
u
mnmnmnknkn πτττττ∫ +−+× ++−++++− ,
where ( ) ( ) ( ) ( )∫=
L
nn
uduvTuPTutH
0
sin,,η .
( ) 2101 αγα −−=t,xC ,
where ( ) ( )
( ) ( ) ( )[ ]
( ) ( ) ( )
∑ ∑ ∑ ×
+−+−+
−
+=
∞
=
∞
=
∞
=
++
+
0 0 0
222
5.05.0
5.0
2
31
5.05.05.0
sin5.0
2
n k m
nkmn
n
kmn
tetete
xvn
π
α
( ) ( )[ ] ( ) ( )[ ]{ }122122
15.05.0
5.0
1 −−
++−+−−−+
+
× knmknm
k
, ekm(t)=ek+0.5
(t)em+0.5(t),
( ) ( ) ( ) ( )[ ]{



∑ ∑ ∑ ∑ ∑ +−+−−
+
+
<
= ∞
=
∞
=
∞
=
∞
=
∞
=
−
++
0 0 0 0 0
12
5.05.0
3
5
2
5.0
1
sin5.0
1
3,0
n k l i j
nn
jilknn
k
texvn
π
γ
α
( ) ( )[ ] ( ) ( )[ ] ( )[ −+−+++−−+−+−−−++
−− 2122122
5.015.05.0 njilknjilkn
( ) ] ( ) ( )[ ] −+−++−+−+−−−−
−− 12212
15.01 jilknjilk
( ) ( )[ ] ++−−−−+−
−122
15.0 lkjin
( ) ( )[ ] ( ) ( )[ ] }×−+++−++−−+−++
−− 122122
25.05.0 lkjinlkjin
( ) ( ) ( ) ( ) ( )[ ]
( ) ( ) ( ) ( ) ( )22222
5,0
111
5.05.05.05.05.0
5.05.05.0
+−+−+−+−+
−+++
×
+
−−−
jilkn
tetejil nklij
, γ =3,
C (x,t)=-γ2
α3-α4,

57
where
( ) ( ) ( ) ( ) ( )[ ]∑ ∑ ∑ ×++−−
+
+=
∞
=
∞
=
∞
=
++
0 1 0
22
5.05.0
2
53 1
5.0
1
sin5.0
4
n k l
nn knkn
k
texvn
π
α
( ) ( )[ ] ( ) ( )[ ] ( ) ( )[ ]×∑∑ ∑ −−++
+
++−+−−+×
∞
=
∞
=
∞
=
−−
1 0 0
22122122
1
5.0
1
15.05.0
m i j
ilil
i
knlknl
( ) ( ) ( )[ ] ( ) ( )[ ] ( ) ( )[ ] ×−−+++−++−+−+×
−−− 1221221222
5.015.05.05.05.0 iljiljjil
( ) ( ) ( )
( ) ( ) ( )[ ] ( )[ ] ( )[ ]∑ ∑ ×
−−++−+−+−+
−−++
+
+×
∞
=
∞
=0 0
22222
22
3
15.05.05.0
1
5.0
1
5.0
i j iljjiljjjil
ilil
i
l
( ) ( )
( ) ( ) ( ) ( )
( ) ( )
( ) ( ) ( ) 





+−+−+
−
−
+−+−+−+
−
× ++
222
5.0
2222
5.0
5.05.05.05.05.05.05.0 lkn
tete
jikn
tete nklnklj
,
( ) ( ) ( ) ( ) ( ) ( )[ ]{




∑ ∑∑ −−−+
+
+
+
==
= ∞
=
∞
=
∞
=
−
++
0 0 0
122
2
5.05.0
4
7
4
5.0
5.0
5.0
sin5.0
3
2,1,0
n i j
nn jin
i
j
texvn
π
γγ
α
( ) ( )[ ] ] ( )[{∑ ∑ ∑ ∑ −+
+++
++−+
∞
=
∞
=
∞
=
∞
=
−
0 0 0 0
2
1
122
1 2
5.0
5.0
1
5.0
1
5.0
1
15.0
k l m m
j
mlk
jin
( ) ] ( ) ( )[ ] ( )[ −+−+−−−++−+−−
−− 212
21
212
21 5.05.0 jmmlkjmmlk
( ) ] ( ) ( )[ ] ( )[ −+−−−−−−+−++−−
−− 212
21
212
( ) ] ( ) ( )[ ] ( )[ −++−+−+−+−−−++−
−− 212
21
212
( ) ] ( ) ( )[ ] }×++++−++−−+−
−− 12
21
212
21 25.0 mmlkjmmlk
( ) ( )
( ) ( ) ( ) ( ) ( ) ( ) ( )


−
+−+−+−+−+−+−+
−
× 2
2
2
1
22222
5.05.05.05.05.05.05.0
21
mmlkjin
tete nmiklm
( ) ( )
( ) ( ) ( )
( ) ( )×∑ ++
+


+−+−+
−
−
∞
=
+
0
5.0
3
17
2
222
1
1
sin5.0
4
5.0
1
5.05.05.0 n
n
nij
xvn
mjin
tete
π

58
( ) ( )[ ]{∑ ∑ ∑ ∑ ++−−−+
+++
×
∞
=
∞
=
∞
=
∞
=
−
0 0 0 0
12
5432
2
1
4322 3 4 5
5.0
5.0
1
5.0
1
5.0
1
n n n n
nnnnn
nnn
( ) ( )[ ] ( ) ( )[ ] −+−++−+−−+−−++
−− 12
5432
2
1
12
5432
2
1 15.05.0 nnnnnnnnnn
( ) ( )[ ] ( ) ( )[ ] −−+−−++++−+−+−
−− 12
5432
2
1
12
5432
2
( ) ( )[ ] ( ) ( )[ ] −++−+−+−+−++−+−
−− 12
5432
2
1
12
5432
2
( ) ( )[ ] ( ) ( )[ ] +−−−−−+−+++−−+−
−− 12
5432
2
1
12
5432
2
( ) ( )[ ] ( ) ( )[ ] }×++++−++−−+−++
−− 12
5432
2
1
12
5432
2
( )
( ) ( ) ( ) ( )
∑ ×





++−+
−
−−+
∑
+
+
×
∞
=
∞
= 0
2
5
22
5
2
0
2
5
15.0
1
5.0
1
5.0
5.0
mk knmknmk
n
( ) ( )
( ) ( ) ( ) ( ) ( ) ( )


−
+−+−+−+−+−+
−
× 222
4
2
3
2
2
2
1 5.05.05.05.05.05.0
1432
mknnnn
tete nkmnnn
( ) ( )
( ) ( ) ( ) ( ) ( )222
5
2
5
2
1 5.05.05.0
1
5.05.0
15
+−+−+



+−+
−
−
mknnn
tete nn
.
C11(x,t)=α5+2α6+2α7-2α8+2α9+α10+4α11,
where
( ) ( ) ( ) ( ) ( )[{∑ ∑ ∑ ∑ −+
+
++=
∞
=
∞
=
∞
=
∞
=
++
0 0 0 0
23
5.05.03
0
5 5.0
5.0
1
5.0sin5.0
2
l n k m
ll
L
m
k
ntexvl
L
D
π
γ
α
( ) ] ( ) ( )[ ] }( ) ( ) ( )[ ] ×+−+−+++−+−−−
−−− 122212212
5.05.05.015.0 nknknmkn
( ) ( )[ ] ( ) ( ) ( ) ( ) ( )[ ]∫ −−−+× +++++++−
t
nlmklnlnl udueueueueueuHuH
0
5.05.05.05.05.01 ,
( ) ( ) ( ) ( ) ( ) ( )[ ]{∑ ∑ ∑ −−−+++=
∞
=
∞
=
∞
=
−
++
0 0 0
1223
5.05.0
2
5
2
0
6 5.05.0sin5.0
n k l
nn
L
knlktexvn
L
Dγ
α

59
( ) ( )[ ] } ( ) ( ) ( ) ( ) ( )[ ]×∑ ∫ +∫ −++−+−
∞
=
++−+++
−
0 0
1
0
5.05.05.0
122
15.0
m
u
mlml
t
lkn HHueueueknl ττ
( ) ( ) ( )2
5.05.0
5.0+−× ++
luddee ml
τττ ,
( ) ( ) ( )×∑ +=
∞
=
++
0
5.05.0307 sin5.0
n
nnL xvten
L
D
π
α
( ) ( ) ( ) ( )[ ]∑∫ +−×
∞
=
++−++
00
15.05.0
m
t
nmnmmn uduHuHueue ,
( ) ( ) ( ) ( ) ( )∑ ∑ ∑ ∫ ×−
+
+=
∞
=
∞
=
∞
=
+++
0 0 0 0
5,05,05,03
0
8
5,0
1
sin5,0
n m k
t
kmnnn
L
ueue
k
texvn
L
Dπγ
α
×[Hn+k-m-0,5(u)+Hn-k+m+0,5(u)-Hn-k-m-0,5(u)-Hn+k+m+1,5(u)]d u,
( ) ( ) ( ) ( )




∑ ∑ ∑ ∑∫ ×−
++
+
=
= ∞
=
∞
=
∞
=
∞
=
++
0 0 0 00
5.05.03
09
5.0
1
5.0
1
sin5.0
1,0
n k l m
t
mnn
L
e
lk
xvten
L
D
τ
π
γ
γ
α
×eklm(τ)[Ik-l-n+m(T)+Ik-l+n-m(T)+Ik-l-n-m-1(T)+Ik-l+n+m+1(T)-Ik-l-n-m-1(T)-
-Ik+l+n-m+1(T)-Im-k-l+n-(T)-Im+k+l+n+2-(T)]d τ, γ >2,
where ( ) ( ) ( )∫=
L
nn uduvTuTI
0
cos,η ,
( ) ( ) ( ) ( ) ( ) ( )[ ]



∑ ∑ ∫ ×+++
<
= ∞
=
∞
=
++−++
0 0 0
1
2
5.05.033
010
5.0sin5.0
2
3,0
i n
t
niniii
L
TITInxvtei
L
D
π
γ
α
( ) ( )[ ]{∑ ∑ ∑ ∑ +−+−−+
++++
×
∞
=
∞
=
∞
=
∞
=
−
0 0 0 0
12
21
2
211 2
5.0
5.0
1
5.0
1
5.0
1
5.0
1
k l m m
mmlkn
mmlk
+[(n+0.5)2
-(k-l-m1+m2)2
]-1
-[(n+0.5)2
-(k-l+m1+m2+1)]-1
-[(n+0.5)2
-(k-l-m1-m2-1)]-1
-
-[(n+0.5)2
-(k+l+m1--m2+1)]-1
-[(n+0.5)2
-(k+l-m1+m2++1)]-1
+[(n+0.5)2
-(k+l-m1-
-m2)]-1
+[(n+0.5)2
-(k+l+m1+m2+2)]-1
}[(n+0.5)2
-(k+0.5)2
-(l+0.5)2
-(m1+0.5)2
-
( ) ] ( ) ( ) ( ) ( )[ ] udueueueuem nimklmi
−−−+−
−
21
1
2
5.0 , γ >3,

60
( ) ( ) ( ) ( )




∑ ∑ ∑ ∑ ∑ ×+
+++
+
<
= ∞
=
∞
=
∞
=
∞
=
∞
=
++
0 0 0 0 0
5.05.0
3
53
2
011
5.0
5.0
1
5.0
1
5.0
1
sin5.0
3,0
i j k l n
ii
L
n
lkj
xvtei
L
D
π
γ
α
×{(i+0.5)2
-(j-k+l-n)2
]-1
+[(i+0.5)2
-(j-k-l+n)2
]-1
-[(i+0.5)2
-(j+k-l+n+1)2
]-1
-
-[(i+0.5)2
-(j+k-l-n+1)2
]-1
-[(i+0.5)2
-(j+k-l+n+1)2
]-1
+[(i+0.5)2
-(j+k-l-n)2
]-1
-
( ) ( )[ ] } ( ) ( ) ( ) ( )[ ] ×∑∫ ∫ +−++++−+
∞
=
++−+
−
00 0
15,0
12
15.0
m
t u
mnmnmn dTITIeenlkji τττ
( ) ( ) udueue jki ln5.0 −× +
, γ =3
( ) ( ) ( )



×∑ ∑ ∑ ∑
+++
+
<
= ∞
=
∞
=
∞
=
∞
=
++
0 0 0 0
5.05.032
2
011
5.0
1
5.0
1
5.0
1
sin5.0
3,0
n k l m
nn
L
mlk
xvten
L
D
π
γ
α
( ) ( ) ( ) ( ) ( ){∑∫ +++−×
∞
=
+−++−+−+−−++−+−+
0 0
5.05.05.05.0
i
t
mlinkmlinkmlinkklmin
uHuHuHueue
+Hk+n-i-l+m+0.5(u)-Hk+n-i-l+m-0.5(u)-Hk-n+I+l-m+1.5(u)-Hk-n+i-l+m-0.5(u)-
-Hk+n-i+l-m+1.5(u)+Hk+n+i-l+m+1.5(u)+Hk-n-i+l-m-0.5(u)++Hk-n-i-l+m-0.5(u)+
+Hk+n+i+l-m+1.5(u)-Hk+n+i-l-m+0.5(u)-Hk-n-i+l+m+0.5(u)-Hk-n-i-l-m-1.5(u)-
-Hk+n+I+l+m+2.5(u)}d u.
Analysis of spatiotemporal distributions of dopant concentrations has been done analytically by
using the second-order approximation of dopant concentration on parameters ε and ξ.. Farther the
distribution has been amended numerically.
3. DISCUSSION
In this section we analyzed dynamics of redistribution of dopant in heterostructure from Fig. 1
based on calculated in previous section relations. Spatial distributions of concentration of dopant
in the considered heterostructure are presented on Fig. 2 for fixed value of annealing time. The
Fig. 2 shows, that increasing of difference between values of dopant diffusion coefficient in the
substrate and in the epitaxial layer gives us possibility to increase sharpness of p-n-junction and at
the same time to increase homogeneity of dopant distribution in doped area. However using this
type of doping leads to necessity in optimization of annealing time. Reason of this optimization is
following. If annealing time is small, dopant cannot achieves interface between layers of hetero-
structure. In this situation homogeneity of distribution of concentration of dopant became less,
than in heterostructure. If annealing time is large, distribution of concentration of dopant became
overly homogenous. We determine optimal annealing time by using recently introduced criterion
[16,17,19,22]. Framework the approach we approximate real distribution of concentration of do-

61
pant by step-wise function (see Fig. 3). Farther we determine optimal value of annealing time by
minimization of the following mean-squared error
( ) ( )[ ]∫ −Θ=
L
xdxxC
L
U
0
,
1
ψ . (7)
Here ψ (x) is the approximation time. Θ is the optimal value of annealing time. Dependences of
optimal value of annealing time on parameters are presented in Fig. 4.
Fig. 2. Distributions of concentration of dopant in heterostructure from Fig. 1 in direction x. The
direction x is perpendicular to interface between layers. Increasing of number of curves corres-
ponds to increasing of value of parameter ε. This curves correspond to situation, when value of
dopant diffusion coefficient in the epitaxial layer is larger, than in the substrate
x
C(x,Θ)
0 L
2
1
34
C0
l0
Fig.3. Spatial distributions of concentration of dopant. Curve 1 is required idealized distribution of concen-
tration of dopant. Curves 2-4 are real distributions of concentration of dopant.
Increasing of number of curves corresponds to increasing of annealing time
Farther we analyzed influence of value of pressure of vapor of dopant from infinite source on dis-
tribution of concentration of the dopant in the considered heterostructure. We assume, that ga-

62
seous source of dopant is ideal gas. In this case pressure of gas and surficial concentration of do-
pant are correlated with each other by linear law: p M = R TN, where M is the molar mass, R =
8.31 J/(mole⋅K) is the gas constant, p is the pressure of gas. In this situation increasing of pressure
of gas in source of dopant leads to proportional increasing of surficial concentration of dopant.
However dependence of optimal value of annealing time on pressure is not so simple due to non-
linearity of criterion of estimation of the time [16,17,19,22,23]. Analysis of dynamics of redistri-
bution of dopant shows, that variation of value of dynamics of vapor leads to quantitative varia-
tion of distribution of concentration of dopant inside of the considered heterostructure, but not to
quantitative variation.
0.0 0.1 0.2 0.3 0.4 0.5
a/L, ξ, ε, γ
0.0
0.1
0.2
0.3
0.4
0.5
ΘD0LL
-2
3
2
4
1
Fig.4. Dependences of dimensionless optimal annealing time, which have been obtained by mi-
nimization of mean-squared error (7), on several parameters. Curve 1 is the dependence of dimen-
sionless optimal annealing time on the relation a/L and ξ=γ=0 for equal to each other values of
dopant diffusion coefficient in all parts of heterostructure. Curve 2 is the dependence of dimen-
sionless optimal annealing time on value of parameter ε for a/L=1/2 and ξ= γ= 0. Curve 3 is the
dependence of dimensionless optimal annealing time on value of parameter ξ for a/L=1/2 and ε=γ
= 0. Curve 4 is the dependence of dimensionless optimal annealing time on value of parameter γ
for a/L=1/2 and ε =ξ=0
4. CONCLUSION
In this paper we analyzed influence of changing of pressure of vapor of dopant from infinite
source on distribution of concentration of the dopant in the p-n- heterojunction. It has been
shown, that the changing of pressure leads to some quantitative variation of distribution of con-
centration of dopant, but not to quantitative variation.
Acknowledgements
This work is supported by the contract 11.G34.31.0066 of the Russian Federation Government,
grant of Scientific School of Russia, the agreement of August 27, 2013 № 02.В.49.21.0003 be-
tween The Ministry of education and science of the Russian Federation and Lobachevsky State
University of Nizhny Novgorod and educational fellowship for scientific research of Nizhny
Novgorod State University of Architecture and Civil Engineering.

63
REFERENCES
[1] A. Kerentsev, V. Lanin. "Design and technological features of MOSFET-transistors" Power Electron-
ics. Issue 1. P. 34 (2008).
[2] A.O. Ageev, A.E. Belyaev, N.S. Boltovets, V.N. Ivanov, R.V. Konakova, Ya.Ya. Kudrik, P.M. Lit-
vin, V.V. Milenin, A.V. Sachenko. "Au–TiBx−n-6H-SiC Schottky barrier diodes: the features of cur-
rent flow in rectifying and nonrectifying contacts". Semiconductors. Vol. 43 (7). P. 897-903 (2009).
[3] Jung-Hui Tsai, Shao-Yen Chiu, Wen-Shiung Lour, Der-Feng Guo. "High-performance InGaP/GaAs
pnp δ-doped heterojunction bipolar transistor". Semiconductors. Vol. 43 (7). P. 971-974 (2009).
[4] E.I. Gol’dman, N.F. Kukharskaya, V.G. Naryshkina, G.V. Chuchueva. "The manife-station of exces-
sive centers of the electron-hole pair generation, appeared as a result to field and thermal stresses, and
their subsequent annihilation in the dynamic current-voltage characteristics of Si-MOS-structures with
the ultrathin oxide". Semiconduc-tors. Vol. 45 (7). P. 974-979 (2011).
[5] T.Y. Peng, S.Y. Chen, L.C. Hsieh C.K. Lo, Y.W. Huang, W.C. Chien, Y.D. Yao. "Impedance behav-
ior of spin-valve transistor". J. Appl. Phys. Vol. 99 (8). P. 08H710-08H712 (2006).
[6] W. Ou-Yang, M. Weis, D. Taguchi, X. Chen, T. Manaka, M. Iwamoto. "Modeling of threshold volt-
age in pentacene organic field-effect transistors". J. Appl. Phys. Vol. 107 (12). P. 124506-124510
(2010).
[7] J. Wang, L. Wang, L. Wang, Z. Hao, Yi Luo, A. Dempewolf, M. M ller, F. Bertram, J rgen Christen.
"An improved carrier rate model to evaluate internal quantum effi-ciency and analyze efficiency
droop origin of InGaN based light-emitting diodes". J. Appl. Phys. Vol. 112 (2). P. 023107-023112
(2012).
[8] Z.Yu. Gotra, Technology of microelectronic devices (Radio and communication, Moscow, 1991).
[9] V.I. Lachin, N.S. Savelov, Electronics (Phoenix, Rostov-na-Donu, 2001).
[10] K.K. Ong, K.L. Pey, P.S. Lee, A.T.S. Wee, X.C. Wang, Y.F. Chong. "Dopant distri-bution in the re-
crystallization transient at the maximum melt depth induced by laser annealing". Appl. Phys. Lett. 89
(17), 172111-172114 (2006).
[11] H.T. Wang, L.S. Tan, E. F. Chor. "Pulsed laser annealing of Be-implanted GaN". J. Appl. Phys. 98
(9), 094901-094905 (2006).
[12] Yu. V. Bykov, A. G. Eremeev, N. A. Zharova, I. V. Plotnikov, K. I. Rybakov, M. N. Drozdov, Yu. N.
Drozdov and V. D. Skupov, "Diffusion processes in semiconductor structures during microwave an-
nealing". Radiophys. Quant. Electron., vol. 46 (8). P. 749 (2003).
[13] I.P. Stepanenko. Basis of Microelectronics (Soviet Radio, Moscow, 1980).
[14] A.G. Alexenko, I.I. Shagurin. Microcircuitry (Radio and communication, Moscow, 1990).
[15] N.A. Avaev, Yu.E. Naumov, V.T. Frolkin. Basis of microelectronics (Radio and communication,
Moscow, 1991).
[16] E.L. Pankratov. "Influence of the spatial, temporal, and concentrational dependence of the diffusion
coefficient on dopant dynamics: optimization of annealing time". Phys. Rev. B. Vol. 72 (7). P.
075201-075208 (2005).
[17] E.L. Pankratov. "Dopant Diffusion Dynamics and Optimal Diffusion Time as Influ-enced by Diffu-
sion-Coefficient Nonuniformity". Russian Microelectronics. 2007. V.36 (1). P. 33-39.
[18] V.V. Kozlivsky. Modification of semiconductors by proton beams (Nauka, Sant-Peterburg, 2003, in
Russian).
[19] E.L. Pankratov, E.A. Bulaeva. " Doping of materials during manufacture p-n-junctions and bipolar
transistors. Analytical approaches to model technological ap-proaches and ways of optimization of
distributions of dopants ". Reviews in Theoreti-cal Science. Vol. 1 (1). P. 58-82 (2013).
[20] A.N. Tikhonov, A.A. Samarskii. The mathematical physics equations (Moscow, Nauka 1972) (in
Russian).

64
[21] H.S. Carslaw, J.C. Jaeger. Conduction of heat in solids. - Oxford: At the Clarendon Press. 1964. 488
p.
[22] E.L. Pankratov, E.A. Bulaeva. "Application of native inhomogeneities to increase compactness of
vertical field -effect transistors". J. Comp. Theor. Nanoscience. Vol. 10 (4). P. 888-893 (2013).
[23] E.L. Pankratov, E.A. Bulaeva. "Optimal Criteria to Estimate Temporal Characteris-tics of Diffusion
Process in a Media with Inhomogenous and Nonstationary Parame-ters. Analysis of Influence of
Variation of Diffusion Coefficient on Values of Time Characteristics". Reviews in Theoretical Sci-
ence. Vol. 1 (3). P. 305-316 (2013).
Authors
Pankratov Evgeny Leonidovich was born at 1977. From 1985 to 1995 he was educated in a secondary
school in Nizhny Novgorod. From 1995 to 2004 he was educated in Nizhny Novgorod State University:
from 1995 to 1999 it was bachelor course in Radiophysics, from 1999 to 2001 it was master course in Ra-
diophysics with specialization in Statistical Radiophysics, from 2001 to 2004 it was PhD course in Radio-
physics. From 2004 to 2008 E.L. Pankratov was a leading technologist in Institute for Physics of Micro-
structures. From 2008 to 2012 E.L. Pankratov was a senior lecture/Associate Professor of Nizhny Novgo-
rod State University of Architecture and Civil Engineering. Now E.L. Pankratov is in his Full Doctor
course in Radiophysical Department of Nizhny Novgorod State University. He has 96 published papers in
area of his researches.
Bulaeva Elena Alexeevna was born at 1991. From 1997 to 2007 she was educated in secondary school of
village Kochunovo of Nizhny Novgorod region. From 2007 to 2009 she was educated in boarding school
“Center for gifted children”. From 2009 she is a student of Nizhny Novgorod State University of Architec-
ture and Civil Engineering (spatiality “Assessment and management of real estate”). At the same time she
is a student of courses “Translator in the field of professional communication” and “Design (interior art)” in
the University. E.A. Bulaeva was a contributor of grant of President of Russia (grant № MK-548.2010.2).
She has 35 published papers in area of her researches.

MODELING OF REDISTRIBUTION OF INFUSED DOPANT IN A MULTILAYER STRUCTURE DOPANT UNDER INFLUENCE OF VARIATION OF PRESSURE OF VAPOR OF THE DOPANT

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