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12. (a) (i)
(ii)
Discuss in general about various fiiek<,"'l' :nnlsa modeL, (8)
Explain the harmonic balance method for crucula.ting the amount of
distorzion in analog' ros circuits. (8)
01'
(b) Derive the expreesicus for tile AC part of the drain current of MOS
tra:fu..;'stOl"using square law model. (16)
13. (a) (i)
(ii)
Develop the threshold voltage model of:tfOSFET. (8)
Bring out the merits and demerits of soUl"'Ce!drainresistance
IvIOSFETmodel. (8)
Or
(b) (i) Explain the procedure relating to the development of gate electrode
and intrinsic-input resistance lIOSFET model. (8)
tii) Discuss the features involved in de~oning Junction diode
capacitance MOSFET model. (8)
14. (a) (i) Establish the need for EKV model and outline the features of
various EKV models. (8)
(ii) With an appropriate example explain the effects of charge sharing.
(8)
Or
(b) (i) Explain the salient features of MOS model 9. (8)
(ii) Discuss how temperature effects are specified inthe EKV modeL (8)
15. (a) Describe the influence of LPVM on MOO transisters and how
misma~ models ofMOSFETs are developed. (IS)
Or
(b) (i) Discuss the various problems encountered by d&~PD.eJlooinoors.that
motivate the development of a quality assurance system. (8)
(ii) Explain how automation ofbencbmark tests is realiud. (8)

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Solid state device modeling and simulation jan2013 (2)

  • 1. 12. (a) (i) (ii) Discuss in general about various fiiek<,"'l' :nnlsa modeL, (8) Explain the harmonic balance method for crucula.ting the amount of distorzion in analog' ros circuits. (8) 01' (b) Derive the expreesicus for tile AC part of the drain current of MOS tra:fu..;'stOl"using square law model. (16) 13. (a) (i) (ii) Develop the threshold voltage model of:tfOSFET. (8) Bring out the merits and demerits of soUl"'Ce!drainresistance IvIOSFETmodel. (8) Or (b) (i) Explain the procedure relating to the development of gate electrode and intrinsic-input resistance lIOSFET model. (8) tii) Discuss the features involved in de~oning Junction diode capacitance MOSFET model. (8) 14. (a) (i) Establish the need for EKV model and outline the features of various EKV models. (8) (ii) With an appropriate example explain the effects of charge sharing. (8) Or (b) (i) Explain the salient features of MOS model 9. (8) (ii) Discuss how temperature effects are specified inthe EKV modeL (8) 15. (a) Describe the influence of LPVM on MOO transisters and how misma~ models ofMOSFETs are developed. (IS) Or (b) (i) Discuss the various problems encountered by d&~PD.eJlooinoors.that motivate the development of a quality assurance system. (8) (ii) Explain how automation ofbencbmark tests is realiud. (8)