SPICE MODEL of TPCA8014 (Professional+BDP Model) in SPICE PARK
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This document summarizes the modeling of a TOSHIBA TPCA8104 power MOSFET. It includes: 1) Details of the MOSFET components and manufacturer. 2) Descriptions of the PSpice model used and its parameters. 3) Simulation results and comparisons to measurements for key characteristics like transconductance, capacitance, switching times and more. 4) Circuit diagrams used to simulate and evaluate the MOSFET performance.
SPICE MODEL of TPCA8014 (Professional+BDP Model) in SPICE PARK
- 1. Device Modeling Report COMPONENTS: Power MOSFET (Professional) PART NUMBER: TPCA8104 MANUFACTURER: TOSHIBA Body Diode (Professional) / ESD Protection Diode Bee Technologies Inc. All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 2. MOSFET MODEL PSpice model Model description parameter LEVEL L Channel Length W Channel Width KP Transconductance RS Source Ohmic Resistance RD Ohmic Drain Resistance VTO Zero-bias Threshold Voltage RDS Drain-Source Shunt Resistance TOX Gate Oxide Thickness CGSO Zero-bias Gate-Source Capacitance CGDO Zero-bias Gate-Drain Capacitance CBD Zero-bias Bulk-Drain Junction Capacitance MJ Bulk Junction Grading Coefficient PB Bulk Junction Potential FC Bulk Junction Forward-bias Capacitance Coefficient RG Gate Ohmic Resistance IS Bulk Junction Saturation Current N Bulk Junction Emission Coefficient RB Bulk Series Resistance PHI Surface Inversion Potential GAMMA Body-effect Parameter DELTA Width effect on Threshold Voltage ETA Static Feedback on Threshold Voltage THETA Mobility Modulation KAPPA Saturation Field Factor VMAX Maximum Drift Velocity of Carriers XJ Metallurgical Junction Depth UO Surface Mobility All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 3. Transconductance Characteristic Circuit Simulation Result 70 65 60 55 50 45 40 gfs 35 30 25 20 15 10 Measurement 5 Simulation 0 0 2 4 6 8 10 12 14 16 18 20 - ID - Drain Current - A Comparison table gfs - Id(A) Error(%) Measurement Simulation 0.5 25.000 25.000 0.000 1 27.000 27.333 1.233 2 30.000 30.333 1.110 5 35.500 35.714 0.603 10 43.000 43.455 1.058 20 52.500 54.054 2.960 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 4. Vgs-Id Characteristic Circuit Simulation result -100A -80A -60A -40A -20A 0A 0V -1.0V -2.0V -3.0V -4.0V -5.0V I(V3) V_V1 Evaluation circuit U10 V3 0Vdc V1 TPCA8104 V2 0 10 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 5. Comparison Graph Circuit Simulation Result 20 Measurement BeeTech MoDech 15 - ID - Drain Current - A 10 5 0 0.0 1.0 2.0 3.0 4.0 5.0 - VGS - Gate to Source Voltage - V Simulation Result - VGS(V) - ID(A) Error (%) Measurement Simulation 0.1 2.200 2.227 1.227 0.2 2.250 2.255 0.222 0.5 2.300 2.305 0.217 1 2.320 2.327 0.302 2 2.350 2.371 0.894 5 2.450 2.464 0.571 10 2.570 2.585 0.584 20 2.760 2.783 0.833 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 6. Rds(on) Characteristic Circuit Simulation result -22A -20A -18A -16A -14A -12A -10A -8A -6A -4A -2A 0A 0V -110mV -220mV -330mV -440mV I(V2) V_VDS Evaluation circuit U10 V2 0Vdc 0Vdc VGS TPCA8104 VDS -10Vdc 0 Simulation Result ID=-20A, VGS=-10V Measurement Simulation Error (%) R DS (on) 0.011 0.0107 -2.707 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 7. Gate Charge Characteristic Circuit Simulation result 30V 25V 20V 15V 10V 5V 0V 0 20n 40n 60n 80n 100n 120n -V(W1:4) Time*1mA Evaluation circuit U10 ION = 0uA IOFF = 1mA W D2 I2 - I1 = 0 + 40 I1 Dbreak I2 = 1m W1 TPCA8104 TD = 0 TR = 10n V1 TF = 10n PW = 600u PER = 1000u -48 0 Simulation Result VDD=-48V,ID=-40A Measurement Simulation Error (%) ,VGS=-10V Qgs(nC) 16.000 15.979 -0.131 Qgd(nC) 28.000 28.041 0.146 Qg(nC) 90.000 90.928 1.031 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 8. Capacitance Characteristic Measurement Simulation Simulation Result Cbd(pF) - VDS(V) Error(%) Measurement Simulation 0.1 520.000 521.000 0.192 0.2 500.000 500.000 0.000 0.5 450.000 450.400 0.089 1 390.000 391.000 0.256 2 320.000 320.000 0.000 5 230.000 230.000 0.000 10 170.000 170.000 0.000 20 120.000 122.000 1.667 50 80.000 80.000 0.000 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 9. Switching Time Characteristic Circuit Simulation result -14V -12V -10V -8V -6V -4V -2V 0V 1.98us 2.00us 2.05us 2.10us 2.13us V(L1:2) V(L2:1)/3 Time Evaluation circuit U10 L2 R2 1.5 50nH -30Vdc RG L1 PER = 2000u V1 PW = 10u TF = 1n 30nH TR = 1n 4.7 TPCA8104 R1 TD = 2u V2 = 20 V2 4.7 V1 = 0 0 Simulation Result ID=-20A, VDD=-300V Measurement Simulation Error(%) VGS=0/-10V Ton(ns) 20.000 19.936 -0.320 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 10. Output Characteristic Circuit Simulation result -100A -10 -4 -6 -8 -3.8 -80A -3.6 -60A - 3.4 -3.2 -40A -3 -20A -2.8 VGS=-2.6 V 0A 0V -1.0V -2.0V -3.0V -4.0V -5.0V I(V3) V_V2 Evaluation circuit U10 V3 0Vdc V1 TPCA8104 V2 0 0 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 11. Forward Current Characteristic Circuit Simulation Result 100A 10A 1.0A 100mA 0V 0.4V 0.8V 1.2V 1.6V I(R1) V_V1 Evaluation Circuit R1 0.01m V1 0Vdc U25 TPCA8104 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 12. Comparison Graph Circuit Simulation Result 100 MoDech BeeTech Measurement Drain reverse current IDR(A) 10 1 0.1 0.00 0.20 0.40 0.60 0.80 1.00 1.20 1.40 1.60 Source-Drain voltage VSD(V) Simulation Result VSD(V) IDR(A) Measuremen Simulation %Error 0.1 0.595 0.590 -0.840 0.2 0.610 0.616 0.984 0.5 0.645 0.651 0.930 1 0.670 0.678 1.194 2 0.700 0.705 0.714 5 0.745 0.746 0.134 10 0.780 0.781 0.128 20 0.820 0.825 0.610 50 0.900 0.900 0.000 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 13. Reverse Recovery Characteristic Circuit Simulation Result 400mA 300mA 200mA 100mA -0mA -100mA -200mA -300mA -400mA 0.96us 1.04us 1.12us 1.20us 1.28us 1.36us I(R1) Time Evaluation Circuit R1 50 V1 = -9.4v V1 V2 = 10.6v U26 TD = 48n D8104 TF = 10ns TR = 10ns PW = 1us PER = 100us 0 Compare Measurement vs. Simulation Measurement Simulation Error (%) Trj(ns) 14.000 14.086 0.614 Trb(ns) 69.000 69.123 0.178 Trr(ns) 83.000 83.209 0.252 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 14. Reverse Recovery Characteristic Reference Trj=14(ns) Trb=69(ns) Conditions:Ifwd=lrev=0.2(A),Rl=50 Example Relation between trj and trb All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 15. Zener Voltage Characteristic Circuit Simulation Result 10mA 9mA 8mA 7mA 6mA 5mA 4mA 3mA 2mA 1mA 0A 0V 5V 10V 15V 20V 25V 30V 35V 40V 45V 50V I(R1) V_V1 Evaluation Circuit U25 R1 TPCA8104 R2 0.01m 100MEG V1 0Vdc 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 16. Zener Voltage Characteristic Reference All Rights Reserved Copyright (c) Bee Technologies Inc. 2006